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    • 13. 发明授权
    • Power drive unit
    • 电源驱动单元
    • US07835156B2
    • 2010-11-16
    • US11220626
    • 2005-09-08
    • Minoru KubokawaTakeshi NakamuraTakaaki Iijima
    • Minoru KubokawaTakeshi NakamuraTakaaki Iijima
    • H05K7/02H05K7/06H05K7/08H05K7/10
    • H05K7/1432
    • In a power drive unit having power modules (three-phase inverter circuits) connected to a control circuit board, bus bars extending from the power modules and a current sensor each installed near the bus bars and including a sensing element that detects currents outputted from the bus bars, there are provided a sensor board on which the sensing element is mounted, and lead pins each connecting the sensor board to the control circuit board and having a bowed shape whose one end is connected to the sensor board and other end once extends away from the circuit board and then turns back toward the circuit board. With this, the circuit board and current sensors can be connected through the lead pins without increasing the distance therebetween and stress produced in the lead pins can be alleviated, thereby enabling the unit to be minimized in size and utilized in a harsh service environment.
    • 在具有连接到控制电路板的电源模块(三相逆变器电路)的功率驱动单元中,从电源模块延伸的汇流条和安装在汇流条附近的电流传感器,并且包括感测元件,该感测元件检测从 汇流条设置有传感器板,感测元件安装在传感器板上,引导销各自将传感器板连接到控制电路板,并且具有弓形形状,其一端连接到传感器板并且另一端延伸离开 然后从电路板转回电路板。 因此,电路板和电流传感器可以通过引线引脚连接,而不增加其间的距离,可以减轻引脚中产生的应力,从而使该单元的尺寸最小化并在恶劣的使用环境中使用。
    • 15. 发明申请
    • NOVEL BISBORON COMPOUND
    • 新颖的BISBONON化合物
    • US20100087645A1
    • 2010-04-08
    • US12094968
    • 2006-11-24
    • Katsuhiko MikoshibaShoichiro OzakiAkinobu SuzukiTakeshi Nakamura
    • Katsuhiko MikoshibaShoichiro OzakiAkinobu SuzukiTakeshi Nakamura
    • C07F5/02
    • C07F5/025
    • A bisboron compound represented by the general formula (I): wherein B represents a boron atom, Y represents an oxygen or sulfur atom, R1 and R2 independently represent a monocyclic aromatic group, a polycyclic aromatic group, or a heterocyclic group containing at least one heteroatom selected from oxygen, nitrogen and sulfur atoms, R3 represents a hydrogen atom; —(CH2)m—NR4R5; —CO—(CH2)m—NR4R5; —COCH(NH2)R6; —CHR7R8; —CH2CH(NH2)—R9; quinolyl substituted with C1-C4 alkyl group; or C1-C4 alkyl substituted with pyridyl, piperidino or pyrrolidinyl group, and X represents a monocyclic aromatic group, a polycyclic aromatic group or a heterocyclic group, which may be the same as or different from R1 and R2, or a bifunctional group having a monocyclic aromatic group, polycyclic aromatic group or heterocyclic group bonded to each side of a group selected from the group consisting of a single bond, O, CH2, S, SO2, CH2OCH2, OCH2, OCH2CH2OCH2, OCH2OCH2CH2 and CH2OCH2CH2, or a salt thereof, and a composition for controlling the intracellular calcium concentration, which comprises the compound or salt thereof as an active ingredient.
    • 由通式(I)表示的双硼化合物:其中B表示硼原子,Y表示氧或硫原子,R1和R2独立地表示单环芳基,多环芳基或含有至少一个 选自氧,氮和硫原子的杂原子,R 3表示氢原子; - (CH 2)m -NR 4 R 5; -CO-(CH 2)m -NR 4 R 5; -COCH(NH 2)R 6; -CHR7R8; -CH 2 CH(NH 2)-R 9; 被C1-C4烷基取代的喹啉基; 或被吡啶基,哌啶子基或吡咯烷基取代的C1-C4烷基,X表示可以与R1和R2相同或不同的单环芳基,多环芳基或杂环基,或具有 或选自由单键,O,CH2,S,SO2,CH2OCH2,OCH2,OCH2CH2OCH2,OCH2OCH2CH2和CH2OCH2CH2组成的组中的一个基团键合的单环芳基,多环芳基或杂环基,或其盐, 以及用于控制细胞内钙浓度的组合物,其包含其化合物或其盐作为活性成分。
    • 20. 发明申请
    • NONVOLATILE MEMORY
    • 非易失性存储器
    • US20090187702A1
    • 2009-07-23
    • US12409386
    • 2009-03-23
    • Kenji KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G06F12/02G06F12/00
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。