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11. 发明授权

US08134773B2 Display device and display method 有权
标题翻译：显示设备和显示方式
公开(公告)号：US08134773B2
公开(公告)日：2012-03-13
申请号：US12705035
申请日：2010-02-12
申请人： Takashi Miyazaki , Rei Hasegawa , Hajime Yamaguchi , Hitoshi Nagato , Haruhi Oooka , Shuichi Uchikoga
发明人： Takashi Miyazaki , Rei Hasegawa , Hajime Yamaguchi , Hitoshi Nagato , Haruhi Oooka , Shuichi Uchikoga
IPC分类号： G02F1/29
CPC分类号： G02F1/155 , B82Y20/00 , B82Y30/00 , G02B5/008 , G02F1/1347 , G02F1/1523 , G02F1/1527 , G02F1/153 , G02F1/17 , G02F1/19 , G02F2001/133521 , G02F2001/1557 , G02F2201/122 , G02F2201/44 , G02F2202/36 , G02F2203/055 , G02F2203/10 , G02F2203/15 , G02F2203/34 , G02F2203/62
摘要： A display device includes: an optical cell including: a first electrode; a second electrode; an ion conduction layer facing the first electrode and the second electrode and containing a mobile ion; and a first nanostructure provided between the first electrode and the ion conduction layer and being electrically connected to the first electrode. The first nanostructure has a first plasmon resonance wavelength in a visible light region and contains a first metal element. A first metal compound layer which contains the first metal element contained in the first nanostructure and has a refractive index different from a refractive index of the ion conduction layer is formed on at least a part of a surface of the first nanostructure by applying a voltage between the first electrode and the second electrode. An amount of the first metal compound layer is different between in a first state in which a first voltage is applied between the first electrode and the second electrode and in a second state in which a second voltage different from the first voltage is applied between the first electrode and the second electrode.
摘要翻译：一种显示装置，包括：光学单元，包括：第一电极; 第二电极; 面向所述第一电极和所述第二电极并且包含可移动离子的离子传导层; 以及设置在第一电极和离子传导层之间并且电连接到第一电极的第一纳米结构。第一纳米结构在可见光区域具有第一等离子体共振波长并且包含第一金属元素。通过在第一纳米结构的表面的至少一部分上施加电压，在第一纳米结构的表面的至少一部分上形成含有第一金属元素的第一金属化合物层，所述第一金属元素包含在第一纳米结构中并具有与离子传导层的折射率不同的折射率，第一电极和第二电极。在第一电极和第二电极之间施加第一电压的第一状态和在第一电压之间施加与第一电压不同的第二电压的第二状态下，第一金属化合物层的量不同电极和第二电极。

12. 发明申请

US20120058601A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法，显示装置及其制造方法
公开(公告)号：US20120058601A1
公开(公告)日：2012-03-08
申请号：US13293298
申请日：2011-11-10
申请人： Nobuyoshi Saito , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
发明人： Nobuyoshi Saito , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
IPC分类号： H01L21/34
CPC分类号： H01L27/1225 , H01L27/127 , H01L27/3244 , H01L27/3248 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2227/323
摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode.
摘要翻译：薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 源电极和漏电极，设置在半导体层上; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。源电极与栅电极的一端相对。漏电极与栅电极的另一端相对。另一端与一端相反。漏极与源电极分开。沟道保护层覆盖半导体层的一部分的侧面的至少一部分。半导体层的一部分不被栅电极上方的源电极和漏电极覆盖。

13. 发明申请

US20100208332A1 DISPLAY DEVICE AND DISPLAY METHOD 有权
标题翻译：显示装置和显示方法
公开(公告)号：US20100208332A1
公开(公告)日：2010-08-19
申请号：US12705035
申请日：2010-02-12
申请人： Takashi MIYAZAKI , Rei Hasegawa , Hajime Yamaguchi , Hitoshi Nagato , Haruhi Oooka , Shuichi Uchikoga
发明人： Takashi MIYAZAKI , Rei Hasegawa , Hajime Yamaguchi , Hitoshi Nagato , Haruhi Oooka , Shuichi Uchikoga
IPC分类号： G02F1/29
CPC分类号： G02F1/155 , B82Y20/00 , B82Y30/00 , G02B5/008 , G02F1/1347 , G02F1/1523 , G02F1/1527 , G02F1/153 , G02F1/17 , G02F1/19 , G02F2001/133521 , G02F2001/1557 , G02F2201/122 , G02F2201/44 , G02F2202/36 , G02F2203/055 , G02F2203/10 , G02F2203/15 , G02F2203/34 , G02F2203/62
摘要： A display device includes: an optical cell including: a first electrode; a second electrode; an ion conduction layer facing the first electrode and the second electrode and containing a mobile ion; and a first nanostructure provided between the first electrode and the ion conduction layer and being electrically connected to the first electrode. The first nanostructure has a first plasmon resonance wavelength in a visible light region and contains a first metal element. A first metal compound layer which contains the first metal element contained in the first nanostructure and has a refractive index different from a refractive index of the ion conduction layer is formed on at least a part of a surface of the first nanostructure by applying a voltage between the first electrode and the second electrode. An amount of the first metal compound layer is different between in a first state in which a first voltage is applied between the first electrode and the second electrode and in a second state in which a second voltage different from the first voltage is applied between the first electrode and the second electrode.
摘要翻译：一种显示装置，包括：光学单元，包括：第一电极; 第二电极; 面向所述第一电极和所述第二电极并且包含可移动离子的离子传导层; 以及设置在第一电极和离子传导层之间并且电连接到第一电极的第一纳米结构。第一纳米结构在可见光区域具有第一等离子体共振波长并且包含第一金属元素。通过在第一纳米结构的表面的至少一部分上施加电压，在第一纳米结构的表面的至少一部分上形成含有第一金属元素的第一金属化合物层，所述第一金属元素包含在第一纳米结构中并具有与离子传导层的折射率不同的折射率，第一电极和第二电极。在第一电极和第二电极之间施加第一电压的第一状态和在第一电压之间施加与第一电压不同的第二电压的第二状态下，第一金属化合物层的量不同电极和第二电极。

14. 发明申请

US20070120117A1 SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20070120117A1
公开(公告)日：2007-05-31
申请号：US11531098
申请日：2006-09-12
申请人： Isao Takasu , Isao Amemiya , Shuichi Uchikoga , Rei Hasegawa , Hideyuki Nakao
发明人： Isao Takasu , Isao Amemiya , Shuichi Uchikoga , Rei Hasegawa , Hideyuki Nakao
IPC分类号： H01L29/08
CPC分类号： H01L29/78681
摘要： The present invention provides a semiconductor element having a semiconductor layer that has high carrier mobility and is easy to form. This semiconductor element includes a semiconductor layer made of TeI4, which has a clustering structure.
摘要翻译：本发明提供了具有高载流子迁移率且容易形成的半导体层的半导体元件。该半导体元件包括具有聚集结构的由TeI 4 Si制成的半导体层。

15. 发明授权

US5614731A Thin-film transistor element having a structure promoting reduction of light-induced leakage current 失效
标题翻译：具有促进光诱导的漏电流的减小的结构的薄膜晶体管元件
公开(公告)号：US5614731A
公开(公告)日：1997-03-25
申请号：US514124
申请日：1995-08-11
申请人： Shuichi Uchikoga , Nobuki Ibaraki , Kouji Suzuki , Takuya Shimano , Kaichi Fukuda
发明人： Shuichi Uchikoga , Nobuki Ibaraki , Kouji Suzuki , Takuya Shimano , Kaichi Fukuda
IPC分类号： H01L21/336 , H01L29/417 , H01L29/786 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/66765 , H01L29/41733 , H01L29/78633
摘要： A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.
摘要翻译：一种设置在具有沟道保护层的沟道区上的薄膜半导体元件，其特征在于，源电极层和漏电极层分别在沟道保护层上具有重叠区域，源电极层的侧壁和漏极电极层在沟道保护层的侧壁的重叠区域的至少一个宽度方向上延伸，源电极层和漏电极层在点处具有与半导体层的重叠交叉点与沟道保护层的重叠交叉。由于上述结构，可以减少由于曝光而产生的漏电流，并且可以通过简单的制造工艺制造薄膜半导体元件。

16. 发明授权

US08679904B2 Method for manufacturing a thin film transistor including a channel protecting layer 有权
标题翻译：包括沟道保护层的薄膜晶体管的制造方法
公开(公告)号：US08679904B2
公开(公告)日：2014-03-25
申请号：US13293298
申请日：2011-11-10
申请人： Nobuyoshi Saito , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
发明人： Nobuyoshi Saito , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1225 , H01L27/127 , H01L27/3244 , H01L27/3248 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2227/323
摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode.
摘要翻译：薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 源电极和漏电极，设置在半导体层上; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。源电极与栅电极的一端相对。漏电极与栅电极的另一端相对。另一端与一端相反。漏极与源电极分开。沟道保护层覆盖半导体层的一部分的侧面的至少一部分。半导体层的一部分不被栅电极上方的源电极和漏电极覆盖。

17. 发明授权

US08525182B2 Thin film transistor, method for manufacturing same, display device, and method for manufacturing same 有权
标题翻译：薄膜晶体管，其制造方法，显示装置及其制造方法
公开(公告)号：US08525182B2
公开(公告)日：2013-09-03
申请号：US13365730
申请日：2012-02-03
申请人： Nobuyoshi Saito , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
发明人： Nobuyoshi Saito , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
IPC分类号： H01L27/14
CPC分类号： H01L27/1225 , H01L27/127 , H01L27/3244 , H01L27/3248 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2227/323
摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.
摘要翻译：薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。源电极与栅电极的一端相对。漏电极与栅电极的另一端相对。另一端与一端相反。漏极与源电极分开。沟道保护层覆盖半导体层的一部分的侧面的至少一部分。半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

18. 发明申请

US20120211745A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120211745A1
公开(公告)日：2012-08-23
申请号：US13410892
申请日：2012-03-02
申请人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
发明人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , B82Y10/00 , H01L29/66969
摘要： According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.
摘要翻译：根据一个实施例，薄膜晶体管包括栅电极，半导体层，栅极绝缘膜，以及源电极和漏电极。半导体层包括包含镓和锌中的至少一种的氧化物和铟。栅极绝缘膜设置在栅电极和半导体层之间。源电极和漏极电连接到半导体层并彼此间隔开。半导体层包括在半导体层中三维分散的多个细微晶体，并且具有原子排列的周期性。

19. 发明申请

US20110057180A1 ORGANIC LIGHT-EMITTING DIODE 失效
标题翻译：有机发光二极管
公开(公告)号：US20110057180A1
公开(公告)日：2011-03-10
申请号：US12876632
申请日：2010-09-07
申请人： Tomio ONO , Shintaro Enomoto , Isao Takasu , Yukitami Mizuno , Shuichi Uchikoga
发明人： Tomio ONO , Shintaro Enomoto , Isao Takasu , Yukitami Mizuno , Shuichi Uchikoga
IPC分类号： H01L51/52
CPC分类号： H01L51/0042 , H01L51/5016
摘要： According to one embodiment, an organic light-emitting diode includes an anode and a cathode arranged apart from each other, an emission layer, arranged between the anode and cathode, containing a host material of polyvinyl(2,7-difluorocarbazole), a blue-emitting phosphorescent material, and an electron transport material, and a hole transport layer of polyvinylcarbazole arranged adjacent to the emission layer on an anode side.
摘要翻译：根据一个实施例，有机发光二极管包括彼此分开布置的阳极和阴极，布置在阳极和阴极之间的发射层，其包含聚乙烯基（2,7-二氟咔唑），蓝色发射磷光材料和电子传输材料，以及在阳极侧与发光层相邻布置的聚乙烯基咔唑的空穴传输层。

20. 发明授权

US07002723B2 Display device 失效
标题翻译：显示设备
公开(公告)号：US07002723B2
公开(公告)日：2006-02-21
申请号：US10968989
申请日：2004-10-21
申请人： Shintaro Enomoto , Shuichi Uchikoga , Isao Amemiya , Yutaka Nakai
发明人： Shintaro Enomoto , Shuichi Uchikoga , Isao Amemiya , Yutaka Nakai
IPC分类号： G02F1/153 , G02F1/15 , G09G3/38
CPC分类号： G02F1/1525 , G02F1/155 , G02F1/157
摘要： In a display device, a first electrode and a second electrode are mounted on a first substrate, a second substrate is arranged to face the first substrate with a gap provided between the first substrate and the second substrate, and a third electrode is mounted on the second substrate. A first layer is formed in a gap between the first substrate and the second substrate at the side of the first substrate and containing a ECL material that emits light due to electrochemical oxidation or reduction. A second layer is formed in the gap between the first substrate and the second substrate at the side of the second substrate and containing a EC material having the color changed due to electrochemical oxidation or reduction.
摘要翻译：在显示装置中，第一电极和第二电极安装在第一基板上，第二基板被布置为在第一基板和第二基板之间具有间隙而面向第一基板，并且第三电极安装在第一基板上第二基板。在第一基板一侧的第一基板和第二基板之间的间隙中形成第一层，并且包含由于电化学氧化或还原而发光的ECL材料。在第二基板一侧的第一基板和第二基板之间的间隙中形成第二层，并且包含由于电化学氧化或还原而具有颜色变化的EC材料。

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