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11. 发明申请

US20100173440A1 Nozzle-Based, Vapor-Phase, Plume Delivery Structure for Use in Production of Thin-Film Deposition Layer 审中-公开
标题翻译：喷嘴为基础，蒸气相，用于生产薄膜沉积层的羽流输送结构
公开(公告)号：US20100173440A1
公开(公告)日：2010-07-08
申请号：US12466981
申请日：2009-05-15
申请人： Robert W. Birkmire , Gregory M. Hanket , T.W. Fraser Russell , Erten Eser
发明人： Robert W. Birkmire , Gregory M. Hanket , T.W. Fraser Russell , Erten Eser
IPC分类号： H01L31/18
CPC分类号： C23C14/562 , C23C14/0021 , C23C14/0623 , C23C14/24 , C23C14/243 , C23C14/548 , H01L21/02554 , H01L21/02568 , H01L21/02631 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A physical vapor deposition effusion method comprising translating a strip material through a physical vapor deposition zone in a deposition chamber and providing first and second substantially closed vessels located serially along the processing path in the same deposition chamber, each vessel emitting different source materials to produce overlapping plumes and having an array of vapor delivery nozzles distributed uniformly across the vessel along the width of the zone, and configured to expel overlapping plumes to create a fog having a substantially uniform composition across the width and a varying composition across the length of the zone. Also, an elongate vapor deposition effusion vessel having an elongate lid including plural nozzles spaced from each other along its elongate axis, and a continuous heating element in the lid encircling the plural nozzles, the heating element having electrical contacts connected to an electrical source on the same side of the vessel.
摘要翻译：一种物理气相沉积渗出方法，包括将条状材料平移通过沉积室中的物理气相沉积区，并提供沿同一沉积室中的处理路径串联设置的第一和第二基本封闭的容器，每个容器发射不同的源材料以产生重叠羽流并且具有沿着该区域的宽度均匀地分布在该容器上的蒸气输送喷嘴的阵列，并且被配置为排出重叠的羽流以产生具有穿过该宽度的基本上均匀的组成的雾和跨越该区域长度的变化的组合。另外，细长的气相沉积容器具有细长的盖子，其细长的盖子包括沿着其细长轴线彼此分开的多个喷嘴，以及围绕多个喷嘴的盖子中的连续的加热元件，加热元件具有电连接到电源船的同一侧。

12. 发明申请

US20090095213A1 THERMAL EVAPORATION SOURCES FOR WIDE-AREA DEPOSITION 有权
标题翻译：用于宽区沉积的热蒸发源
公开(公告)号：US20090095213A1
公开(公告)日：2009-04-16
申请号：US12250172
申请日：2008-10-13
申请人： Robert W. Birkmire , Gregory M. Hanket
发明人： Robert W. Birkmire , Gregory M. Hanket
IPC分类号： C23C14/24
CPC分类号： F27B14/00 , C23C14/243
摘要： A thermal evaporation source includes: a crucible configured to contain a volume of evaporant and a vapor space above the evaporant; a manifold body having within it a hollow expansion chamber that is flowably connected to the vapor space via one or more restriction orifices; one or more effusion nozzles flowably connected to the expansion chamber and exiting an outer surface of the thermal evaporation source, the nozzle(s) oriented to direct an evaporant vapor flow out of the source vertically downward, in one or more horizontal directions, or in one or more directions intermediate between horizontal and vertically downward; and a heater capable of heating some or all of the thermal evaporation source to a temperature sufficient to produce the one or more evaporant vapor flows when a vacuum is applied to the thermal evaporation source.
摘要翻译：热蒸发源包括：坩埚，其构造成容纳蒸发剂的体积和蒸发器上方的蒸汽空间; 歧管主体，在其内部具有中空膨胀室，其经由一个或多个限制孔流动地连接到蒸气空间; 一个或多个渗出喷嘴可流动地连接到膨胀室并离开热蒸发源的外表面，喷嘴被定向成将蒸发蒸气流沿垂直向下的一个或多个水平方向引导出源，或者在在水平和垂直向下之间中间的一个或多个方向; 以及当将真空加到热蒸发源上时能够将部分或全部热蒸发源加热到足以产生一个或多个蒸发蒸气流的温度的加热器。

13. 发明授权

US5674555A Process for preparing group Ib-IIIa-VIa semiconducting films 失效
标题翻译：制备Ib-IIIa-VIa族半导体膜的方法
公开(公告)号：US5674555A
公开(公告)日：1997-10-07
申请号：US564957
申请日：1995-11-30
申请人： Robert W. Birkmire , Jerold M. Schultz , Matheswaran Marudachalam , Habib Hichri
发明人： Robert W. Birkmire , Jerold M. Schultz , Matheswaran Marudachalam , Habib Hichri
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541 , Y10S438/93
摘要： Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.
摘要翻译：提供了用于制备负载的单相I-III-VI族半导体膜的方法。在本发明的方法中，用I和III族元素涂覆基材，然后在足以产生涂覆有至少两种不同I-III-IV族合金的复合材料的基材的条件下与含有活性VI族元素的气氛接触。然后将所得复合涂覆的基材在惰性气氛中在足以将复合涂层转化为单相I-III-VI族半导体膜的条件下退火。得到的支持的半导体膜可用于光伏应用中，特别是作为太阳能电池中的吸收层。

14. 发明授权

US4909863A Process for levelling film surfaces and products thereof 失效
标题翻译：流平膜表面及其制品的方法
公开(公告)号：US4909863A
公开(公告)日：1990-03-20
申请号：US218758
申请日：1988-07-13
申请人： Robert W. Birkmire , Brian E. McCandless
发明人： Robert W. Birkmire , Brian E. McCandless
IPC分类号： H01L21/465 , H01L25/04 , H01L31/0224 , H01L31/032 , H01L31/0336
CPC分类号： H01L31/0749 , H01L21/465 , H01L31/022466 , H01L31/0322 , H01L31/043 , Y02E10/541 , Y10S148/051 , Y10S438/964
摘要： Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface.
摘要翻译：提供了由其制备的半导体膜和光伏器件，其中半导体膜具有比平均平面膜表面小约0.25微米的纹理的镜面，并且其中半导体膜通过将表面暴露于溴水溶液含有酸或盐并持续这样的暴露足以蚀刻表面的时间。

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