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11. 发明授权

US07476291B2 High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation 有权
标题翻译：用于光刻胶剥离和后金属蚀刻钝化的高室温工艺和室设计
公开(公告)号：US07476291B2
公开(公告)日：2009-01-13
申请号：US11528275
申请日：2006-09-28
申请人： Ing-Yann Albert Wang , Robert Chebi
发明人： Ing-Yann Albert Wang , Robert Chebi
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01J37/16 , H01J37/00 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.
摘要翻译：一种用于钝化和/或剥离形成在半导体衬底上的光致抗蚀剂层的真空室。该腔室包括一个内部腔体，它形成一个腔体以包围衬底，并具有多个通过其延伸到空腔的气体通道和一个或多个加热器来加热内部腔体。内部室主体可滑动地安装在外部室主体上，该外部室主体围绕内部腔室的一侧具有间隙。该装置还包括：排气单元，用于从空腔泵送气体; 安装在内部室主体上的室顶部，以覆盖内部室主体的顶表面，其间具有间隙，并具有与气体通道流体连通的开口; 以及等离子体源，用于将气体激发成等离子体状态并且耦合到开口以与空腔流体连通。

12. 发明申请

US20070264841A1 Photoresist stripping chamber and methods of etching photoresist on substrates 有权
标题翻译：光刻胶剥离室和在基材上蚀刻光致抗蚀剂的方法
公开(公告)号：US20070264841A1
公开(公告)日：2007-11-15
申请号：US11431104
申请日：2006-05-10
申请人： Robert Chebi , Jaroslaw Winniczek , Alan Miller , Gladys Lo
发明人： Robert Chebi , Jaroslaw Winniczek , Alan Miller , Gladys Lo
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31138 , H01J37/321 , H01J2237/3342
摘要： Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.
摘要翻译：处理衬底以保护有源区域的方法包括将衬底定位在电感耦合等离子体处理室中，将工艺气体供应到腔室，从处理气体产生等离子体并处理衬底，以通过保持来保护有源区域在衬底表面上具有约5至15伏特的等离子体电位和/或通过使用包含至少一种在衬底的有源区上形成保护层的至少一种添加剂的无硅衬底工艺气体来钝化活性区域，其中保护层包括已经存在于活性区域中的来自添加剂的至少一种元素。

13. 发明申请

US20060201911A1 Methods of etching photoresist on substrates 审中-公开
公开(公告)号：US20060201911A1
公开(公告)日：2006-09-14
申请号：US11429959
申请日：2006-05-09
申请人： Erik Edelberg , Robert Chebi , Gladys Lo
发明人： Erik Edelberg , Robert Chebi , Gladys Lo
IPC分类号： C23F1/00
CPC分类号： H01L21/31138 , G03F7/427
摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y≧x and z≧0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.

14. 发明申请

US20110023779A1 Variable Volume Plasma Processing Chamber and Associated Methods 审中-公开
标题翻译：可变体积等离子体处理室和相关方法
公开(公告)号：US20110023779A1
公开(公告)日：2011-02-03
申请号：US12898660
申请日：2010-10-05
申请人： Ing-Yann Albert Wang , Robert Chebi
发明人： Ing-Yann Albert Wang , Robert Chebi
IPC分类号： B05C11/10
CPC分类号： H01J37/32458
摘要： A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.
摘要翻译：等离子体处理室包括基板支撑件，该基板支撑件具有限定的顶表面，以在该腔室内以基本上水平的方向支撑基板。等离子体处理室还包括多个伸缩构件，其设置在基板支撑件的外围的腔室内。伸缩构件的数量也相对于衬底支撑件的顶表面的中心以同心的方式设置。多个伸缩构件中的每一个被限定为在基本上垂直的方向上独立地移动，以便能够调整衬底支撑件的顶表面之上的开放体积，从而使得能够在开口体积以内的等离子体状态衬底支撑的顶表面。

15. 发明申请

US20090184089A1 FABRICATION OF A SILICON STRUCTURE AND DEEP SILICON ETCH WITH PROFILE CONTROL 有权
标题翻译：具有轮廓控制的硅结构和深层硅蚀刻的制造
公开(公告)号：US20090184089A1
公开(公告)日：2009-07-23
申请号：US12338950
申请日：2008-12-18
申请人： Robert CHEBI , Frank LIN , Jaroslaw W. WINNICZEK , Wan-Lin CHEN , Erin MCDONNELL , Lily ZHENG , Stephan LASSIG , Jeff BOGART , Camelia RUSU
发明人： Robert CHEBI , Frank LIN , Jaroslaw W. WINNICZEK , Wan-Lin CHEN , Erin MCDONNELL , Lily ZHENG , Stephan LASSIG , Jeff BOGART , Camelia RUSU
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/02057 , H01L21/30655 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
摘要翻译：提供了将特征蚀刻成具有稳态气流的硅层的方法。提供了包含含氧气体和含氟气体的蚀刻气体。从蚀刻气体提供等离子体。然后，停止蚀刻气体的流动。

16. 发明申请

US20080078744A1 High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation 有权
标题翻译：用于光刻胶剥离和后金属蚀刻钝化的高室温工艺和室设计
公开(公告)号：US20080078744A1
公开(公告)日：2008-04-03
申请号：US11528275
申请日：2006-09-28
申请人： Ing-Yann Albert Wang , Robert Chebi
发明人： Ing-Yann Albert Wang , Robert Chebi
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01J37/16 , H01J37/00 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.
摘要翻译：一种用于钝化和/或剥离形成在半导体衬底上的光致抗蚀剂层的真空室。该腔室包括一个内部腔体，它形成一个腔体以包围衬底并具有多个通过其延伸到腔体的气体通道和一个或多个加热器来加热内部腔体。内部室主体可滑动地安装在外部室主体上，该外部室主体围绕内部腔室的一侧具有间隙。该装置还包括：排气单元，用于从空腔泵送气体; 安装在内部室主体上的室顶部，以覆盖内部室主体的顶表面，其间具有间隙，并具有与气体通道流体连通的开口; 以及等离子体源，用于将气体激发成等离子体状态并且耦合到开口以与空腔流体连通。

17. 发明授权

US06241845B1 Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer 有权
标题翻译：用于减少感应耦合等离子体蚀刻如氧化物层中的工艺漂移的装置
公开(公告)号：US06241845B1
公开(公告)日：2001-06-05
申请号：US09421933
申请日：1999-10-21
申请人： Prashant Gadgil , Janet M. Flanner , John P. Jordan , Adrian Doe , Robert Chebi
发明人： Prashant Gadgil , Janet M. Flanner , John P. Jordan , Adrian Doe , Robert Chebi
IPC分类号： H01L2100
CPC分类号： H01L21/67109 , H01J37/32522 , H01L21/67069
摘要： A plasma processing chamber includes a substrate holder and a gas distribution plate having an inner surface facing the substrate holder, the inner surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The inner surface is cooled by adding a heat transfer gas such as helium to process gas supplied through the gas distribution plate. The chamber can include a dielectric window between an antenna and the gas distribution plate. The control of the temperature of the inner surface facing the substrate minimizes process drift and degradation of the quality of the processed substrates during sequential processing of the substrates such as during oxide etching of semiconductor wafers.
摘要翻译：等离子体处理室包括衬底保持器和具有面向衬底保持器的内表面的气体分配板，内表面保持在阈值温度以下，以最小化衬底处理期间的工艺漂移。通过添加诸如氦的传热气体来对内表面进行冷却，以处理通过气体分配板供应的气体。该室可以包括在天线和气体分配板之间的介电窗口。面对衬底的内表面的温度的控制使得在衬底的顺序处理期间（例如在半导体晶片的氧化物蚀刻期间）处理衬底的质量的过程漂移和劣化最小化。

18. 发明授权

US6048798A Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer 失效
标题翻译：用于减少感应耦合等离子体蚀刻如氧化物层中的工艺漂移的装置
公开(公告)号：US6048798A
公开(公告)日：2000-04-11
申请号：US658258
申请日：1996-06-05
申请人： Prashant Gadgil , Janet M. Flanner , John P. Jordon , Adrian Doe , Robert Chebi
发明人： Prashant Gadgil , Janet M. Flanner , John P. Jordon , Adrian Doe , Robert Chebi
IPC分类号： H01J37/32 , H01L21/00 , C23F1/00
CPC分类号： H01L21/67109 , H01J37/32522 , H01L21/67069
摘要： A plasma processing chamber includes a substrate holder and a gas distribution plate having an inner surface facing the substrate holder, the inner surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The inner surface is cooled by adding a heat transfer gas such as helium to process gas supplied through the gas distribution plate. The chamber can include a dielectric window between an antenna and the gas distribution plate. The control of the temperature of the inner surface facing the substrate minimizes process drift and degradation of the quality of the processed substrates during sequential processing of the substrates such as during oxide etching of semiconductor wafers.
摘要翻译：等离子体处理室包括衬底保持器和具有面向衬底保持器的内表面的气体分配板，内表面保持在阈值温度以下以最小化衬底处理期间的工艺漂移。通过添加诸如氦的传热气体来对内表面进行冷却，以处理通过气体分配板供应的气体。该室可以包括在天线和气体分配板之间的介电窗口。面对衬底的内表面的温度的控制使得在衬底的顺序处理期间（例如在半导体晶片的氧化物蚀刻期间）处理衬底的质量的过程漂移和劣化最小化。

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