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    • 12. 发明授权
    • Active matrix display devices and the manufacture thereof
    • 主动矩阵显示装置及其制造
    • US07524688B2
    • 2009-04-28
    • US10515163
    • 2003-05-15
    • Pieter J. Van Der ZaagSoo Y. YoonNigel D. Young
    • Pieter J. Van Der ZaagSoo Y. YoonNigel D. Young
    • H01L21/00
    • H01L29/6675G02F1/13454H01L21/02532H01L21/02672H01L21/02686H01L29/78672
    • An active plate (2) for an active matrix display device (16), the active plate (2) comprising a substrate (4), a pixel area (6) and an adjacent drive circuit area (8). Both areas include polycrystalline silicon material formed by a process in which a metal is used to enhance the crystallization process (MIC poly-Si), but only the MIC poly-Si in the drive circuit area (8) is subjected to an irradiation process using an energy beam (10). TFTs are fabricated with MIC poly-Si which have leakage currents in the off state sufficiently low for them to be acceptable for use as switching elements in the pixel area of matrix display devices. As only the drive circuit area (8) need be irradiated to provide poly-Si having the desired mobility, the time taken by the irradiation process can be significantly reduced.
    • 一种用于有源矩阵显示装置(16)的有源板(2),所述有源板(2)包括衬底(4),像素区域(6)和相邻的驱动电路区域(8)。 这两个区域都包括通过使用金属来增强结晶过程(MIC poly-Si)的方法形成的多晶硅材料,但是仅驱动电路区域(8)中的MIC多晶硅被使用 能量束(10)。 TFT是用MIC多晶硅制造的,其泄漏电流处于断开状态足够低,使得它们可以被用作矩阵显示装置的像素区域中的开关元件。 由于仅需要照射驱动电路区域(8)以提供具有所需移动性的多晶硅,所以可以显着地减少照射过程所花费的时间。
    • 14. 发明授权
    • Magnetostrictive stress sensor
    • 磁致伸缩应力传感器
    • US06494108B1
    • 2002-12-17
    • US09261846
    • 1999-03-03
    • Pieter J. Van Der ZaagGerardus H. J. Somers
    • Pieter J. Van Der ZaagGerardus H. J. Somers
    • G01L302
    • H01L41/125G01B7/24G01L1/125
    • A magnetostrictive stress sensor is provided with a soft-ferromagnetic body having a grain structure, at least a part of the grains having a grain size in the transition region between the one-domain and the two-domain state. At this grain size, which is of the order of 1 to 9 &mgr;m for a ferrite body, a relatively large magnetostrictive effect occurs. In a practical embodiment, the ferromagnetic body is formed by a ferrite core, in particular a ferrite ring, around at least a part of which an electric oil is wound, which is incorporated in a measuring circuit for measuring changes in the self-induction of the coil under the influence of mechanical pressure exerted on the ferrite core.
    • 磁致伸缩应力传感器设置有具有晶粒结构的软铁磁体,所述晶粒的至少一部分具有处于单畴状态和双畴状态之间的过渡区域中的晶粒尺寸。 在铁素体的这种粒径为1〜9μm的范围内,会发生较大的磁致伸缩效应。 在实用的实施例中,铁磁体由铁氧体磁心形成,特别是铁氧体磁环,其中至少一部分电磁油被缠绕在电磁油中,该测量电路用于测量自感的变化 线圈在机械压力的影响下施加在铁氧体磁芯上。
    • 19. 发明授权
    • Pixellated device with the metal layer atop the address lines
    • 像素化设备,金属层位于地址线顶部
    • US07187422B2
    • 2007-03-06
    • US10853349
    • 2004-05-25
    • Ian D. FrenchPieter J. Van der Zaag
    • Ian D. FrenchPieter J. Van der Zaag
    • G02F1/136
    • H01L29/66765G02F1/13439G02F1/136286H01L27/124H01L27/1248H01L27/1288
    • A method for use in the fabrication of active plates for pixellated devices, such as active matrix liquid crystal displays, having pixel electrodes (38) and associated address lines (32) formed from a layer of transparent conductive material (53) through which the conductivity of the address lines is improved. The transparent conductive layer (53) and a metal layer (54) are deposited in succession and followed by a shielding layer (60), e.g. of photoresist, which is patterned into a configuration of regions (67,68,69) corresponding to the required pixel dielectrodes and address lines with a property of the layer at these respective regions being different. This enables the regions of this layer corresponding to the pixel electrodes to be selectively etched away, thereby allowing the metal at these regions to be selectively removed while leaving metal at the address lines.The method simplifies the production of low mask mount TFT active plates with improved address line conductivity.
    • 一种用于制造用于像素化器件(例如有源矩阵液晶显示器)的有源板的方法,其具有由透明导电材料(53)层形成的像素电极(38)和相关联的地址线(32),通过该透明导电材料 的地址线被改善。 透明导电层(53)和金属层(54)依次沉积,然后是屏蔽层(60)。 的光刻胶,其被图案化成对应于所需像素电介质的区域(67,68,69)的配置,并且具有在这些相应区域处的层的性质不同的地址线。 这使得能够选择性地蚀刻掉与像素电极相对应的该层的区域,从而允许在这些区域处的金属被选择性地去除,同时在地址线处留下金属。 该方法简化了具有改进的地址线电导率的低掩模安装TFT有源板的生产。