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    • 12. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08685842B2
    • 2014-04-01
    • US13627580
    • 2012-09-26
    • Minoru OdaTsutomu Tezuka
    • Minoru OdaTsutomu Tezuka
    • H01L21/205H01L21/36
    • H01L29/785H01L21/02488H01L21/02532H01L21/02587H01L21/02667H01L29/66795
    • According to one embodiment, a method of manufacturing a semiconductor device including forming a first SiGe layer on an insulating film, processing the first SiGe layer to have an island shape which includes a first region and a second region, the first region having a width larger than a width of the second region in a direction perpendicular to a connecting direction of the second region, subjecting the first SiGe layer having the island shape to thermal oxidation, thereby increasing Ge composition of the first and second region, and setting the Ge composition of the second region to be higher than the Ge composition of the first region, melting the second region having the increased Ge composition by heat treatment, and recrystallizing the melted second region from an interface between the first and second region.
    • 根据一个实施例,一种制造半导体器件的方法,包括在绝缘膜上形成第一SiGe层,将第一SiGe层加工成具有包括第一区域和第二区域的岛状,第一区域的宽度较大 比与第二区域的连接方向垂直的方向上的第二区域的宽度,对具有岛状的第一SiGe层进行热氧化,由此增加第一和第二区域的Ge组成,并且将Ge组成 第二区域高于第一区域的Ge组成,通过热处理熔化具有增加的Ge组成的第二区域,并且从第一和第二区域之间的界面重熔熔融的第二区域。
    • 13. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20130023092A1
    • 2013-01-24
    • US13627580
    • 2012-09-26
    • Minoru ODATsutomu TEZUKA
    • Minoru ODATsutomu TEZUKA
    • H01L21/336
    • H01L29/785H01L21/02488H01L21/02532H01L21/02587H01L21/02667H01L29/66795
    • According to one embodiment, a method of manufacturing a semiconductor device including forming a first SiGe layer on an insulating film, processing the first SiGe layer to have an island shape which includes a first region and a second region, the first region having a width larger than a width of the second region in a direction perpendicular to a connecting direction of the second region, subjecting the first SiGe layer having the island shape to thermal oxidation, thereby increasing Ge composition of the first and second region, and setting the Ge composition of the second region to be higher than the Ge composition of the first region, melting the second region having the increased Ge composition by heat treatment, and recrystallizing the melted second region from an interface between the first and second region.
    • 根据一个实施例,一种制造半导体器件的方法,包括在绝缘膜上形成第一SiGe层,将第一SiGe层加工成具有包括第一区域和第二区域的岛状,第一区域的宽度较大 比与第二区域的连接方向垂直的方向上的第二区域的宽度,对具有岛状的第一SiGe层进行热氧化,由此增加第一和第二区域的Ge组成,并且将Ge组成 第二区域高于第一区域的Ge组成,通过热处理熔化具有增加的Ge组成的第二区域,并且从第一和第二区域之间的界面重熔熔融的第二区域。
    • 15. 发明授权
    • Return address adding mechanism for use in parallel processing system
    • 返回地址添加机制用于并行处理系统
    • US5857111A
    • 1999-01-05
    • US937890
    • 1996-02-12
    • Minoru Oda
    • Minoru Oda
    • G06F13/16G06F13/40G06F13/00
    • G06F13/1657G06F13/4022
    • When memory access is to be accomplished in a parallel processing system, interfacing between networks is simplified by generating network control information for the return of read out data in the networks and embedding it into requests. For this purpose, flip-flops for identifying input port numbers are provided in each network through which requests are to be transferred, the identified input numbers are embedded into the requests to be transferred and, when returning data, this information is used as network switching control information. Furthermore, the outputs of arbiters in the networks through which requests are transferred are used as input port numbers.
    • 当在并行处理系统中完成存储器访问时,通过生成用于返回网络中的读出数据并将其嵌入到请求中的网络控制信息来简化网络之间的接口。 为此,在要传送请求的每个网络中提供用于识别输入端口号的触发器,所识别的输入号码被嵌入到要传送的请求中,并且当返回数据时,该信息被用作网络切换 控制信息。 此外,将请求传送到的网络中的仲裁者的输出用作输入端口号。
    • 16. 发明授权
    • Pulse shaping filter
    • 脉冲形状滤波器
    • US5237527A
    • 1993-08-17
    • US798811
    • 1991-11-27
    • Minoru Oda
    • Minoru Oda
    • H03H11/04H03H11/12H03K5/02
    • H03K5/02
    • A pulse shaping filter for use in pulse height analysis, wherein a plurality of semi-gaussian filters of different time constants are provided, which generate a plurality of signals of semi-gaussian shape with different pulse widths from one input signal, and added the plurality of signals after delaying them in a manner that the signal of the semi-gaussian filter of the smaller time constant is delayed longer, thereby to obtain a signal of approximately cusp shaping.
    • 一种用于脉冲高度分析的脉冲整形滤波器,其中提供了不同时间常数的多个半高斯滤波器,其产生具有来自一个输入信号的不同脉冲宽度的多个具有不同脉冲宽度的半高斯形状的信号,并将多个 的信号,以使得较小时间常数的半高斯滤波器的信号被延迟更长的方式延迟它们,从而获得近似尖点整形的信号。
    • 17. 发明授权
    • Reactor power measuring method
    • 电抗器功率测量方法
    • US5185121A
    • 1993-02-09
    • US821871
    • 1992-01-16
    • Minoru Oda
    • Minoru Oda
    • G01T3/00G21C17/10
    • G01T3/00G21C17/10
    • In a nuclear reactor wherein a plurality of neutron detectors are arranged vertically and at equal azimuth angles around a core of the nuclear reactor, thereby to measure a vertical power profile with a core of the reactor core, the improvement comprising dividing the core into sectors at respective azimuth angles confronting the neutron detectors, usingg the output signal of the partial detectors included in each of the neutron detectors for measuring a vertical reactor power profile of the azimuthal sector of the core confronting the corresponding neutron detector, and averaging the vertical profiles of the respective azimuthal parts with respect to the azimuth angles to measure the vertical reactor power profile of the reactor.
    • 在核反应堆中,其中多个中子探测器在核反应堆的核心周围垂直排列并且以相等的方位角排列,由此测量与反应堆堆芯的核心垂直的功率分布,其改进包括将核心分为 使用包含在每个中子检测器中的部分检测器的输出信号,用于测量与相应的中子探测器相对的核心的方位角扇区的垂直反应堆功率曲线,并平均垂直剖面的中子探测器的相应方位角 相对于方位角的各个方位角部分来测量反应堆的垂直反应堆功率分布。
    • 18. 发明授权
    • Apochromat type objective lenses
    • 消色差型物镜
    • US4854686A
    • 1989-08-08
    • US190111
    • 1988-05-05
    • Minoru Oda
    • Minoru Oda
    • G02B9/34G02B13/02
    • G02B13/02G02B9/34
    • An apochromat type objective lenses, which is applied to an astronomical telescope; a telephoto lens for cameras or the like, comprising a semiapochromatic first lens system synthesized lens composed of two lenses in one group consisting of a convex lens and a concave lens, and an achromatic second lens system synthesized lens composed of two lenses in one group consisting of a concave lens and a convex lens, which is arranged in a spaced apart relation behind the semiapochromatic first lens system; the first and second lens systems being fulfilled with the condition below: ##EQU1## where, f, f: the focal length of the first and second lens systems,K, K: the proportion of the residual secondary chromatic aberration of the first and second lens systems, andL: the mutual spacing between respective lens systems.
    • 一种应用于天文望远镜的复消色差型物镜; 一种用于照相机等的长焦镜头,包括由包括凸透镜和凹透镜的一组中的两个透镜组成的半色调凸第一透镜系统,以及由包括凹透镜的一组中的两个透镜组成的消色差凹面第二透镜系统 以及凸透镜,其在所述半色相第一透镜系统后面以间隔关系布置; 第一和第二透镜系统满足以下条件:其中,f,f:第一和第二透镜系统的焦距K,K:第一和第二透镜系统的残余二次色差的比例 透镜系统,L:各透镜系统之间的相互间隔。
    • 20. 发明授权
    • Nuclear reactor power meter
    • 核反应堆功率计
    • US4696789A
    • 1987-09-29
    • US790625
    • 1985-10-23
    • Minoru OdaKunio Oba
    • Minoru OdaKunio Oba
    • G01T1/167G21C17/022G21C17/10G21C17/108G21C17/00
    • G21C17/022
    • A nuclear reactor output power meter for measuring the output of a nuclear reactor from the concentration signal of radioisotope .sup.16 N in a primary coolant loop, having a transient response correction circuit. This correction circuit includes an approximated normal distribution response filter. This filter has a group delay time substantially corresponding to a single circulation time necessary for the primary coolant loop of the nuclear reactor. This filter also has a rise time in the step response substantially corresponding to a spread in the rise time of the .sup.16 N concentration signal due to agitation occurring during the single circulation time.
    • 一种核反应堆输出功率计,用于从主冷却剂回路中的放射性同位素16N的浓度信号测量核反应堆的输出,具有瞬态响应校正电路。 该校正电路包括近似正态分布响应滤波器。 该过滤器具有基本上对应于核反应堆的一次冷却剂回路所需的单个循环时间的组延迟时间。 该滤波器也具有基本对应于在单次循环时间期间发生搅拌而在16N浓度信号的上升时间内的扩展的阶跃响应中的上升时间。