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11. 发明授权

US07314255B2 Structure of wheel rim cover 失效
标题翻译：轮辋盖结构
公开(公告)号：US07314255B2
公开(公告)日：2008-01-01
申请号：US11230475
申请日：2005-09-21
申请人： Ming-Fang Wang
发明人： Ming-Fang Wang
IPC分类号： B60B7/12
CPC分类号： B60B7/10
摘要： The invention structure of wheel rim cover includes: a cover body whose disc surface has a plurality of spokes separated by openings; many fasteners are set on an outer edge of a rearward end hole of each opening. The fasteners are grouped surrounding the end hole of a same opening, and are jointly supported by a spring ring. The whole cover body can make use of the fasteners to latch on the end hole of the opening of a targeted wheel rim to fasten the cover body on the wheel rim.
摘要翻译：轮缘盖的发明结构包括：盖体，其盘表面具有由开口分开的多个辐条; 许多紧固件设置在每个开口的后端孔的外边缘上。紧固件分组围绕相同开口的端孔，并且由弹簧环共同支撑。整个盖体可以利用紧固件锁定在目标轮缘的开口的端孔上，以将盖体固定在轮缘上。

12. 发明申请

US20050173969A1 Extensional hubcap docking structure 审中-公开
标题翻译：扩展轮毂盖对接结构
公开(公告)号：US20050173969A1
公开(公告)日：2005-08-11
申请号：US10774391
申请日：2004-02-10
申请人： Ming-Fang Wang
发明人： Ming-Fang Wang
IPC分类号： B60B7/12
CPC分类号： B60B7/12
摘要： An extensional hubcap docking structure comprised of anchoring mounts disposed on the back surface of a hubcap and clip components coupled onto the anchoring mounts. Elastic components are situated between the hubcap anchoring mounts and the clip components. When the hubcap is fully installed onto the tire wheel and the hubcap is subjected to an outward force that displaces the anchoring mounts outward, the elastic components deform and shift such that the hubcap is kept safely and tightly positioned on the wheel rim.
摘要翻译：延伸毂盖对接结构，其包括设置在轮毂盖的后表面上的锚定安装件和联接到锚固安装件上的夹紧部件。弹性部件位于轮毂盖锚固支架和夹子部件之间。当轮毂盖完全安装到轮胎车轮上并且轮毂盖受到向外的力的作用时，弹性部件变形和移动，使得轮毂盖保持安全且紧密地定位在轮辋上。

13. 发明授权

US06914313B2 Process for integration of a high dielectric constant gate insulator layer in a CMOS device 失效
标题翻译：在CMOS器件中集成高介电常数栅极绝缘体层的工艺
公开(公告)号：US06914313B2
公开(公告)日：2005-07-05
申请号：US10696007
申请日：2003-10-29
申请人： Ming-Fang Wang , Chien-Hao Chen , Liang-Gi Yao , Shih-Chang Chen
发明人： Ming-Fang Wang , Chien-Hao Chen , Liang-Gi Yao , Shih-Chang Chen
IPC分类号： H01L21/8238 , H01L29/76
CPC分类号： H01L21/823857 , H01L21/823807 , H01L21/823814 , H01L29/665 , Y10S257/90
摘要： A CMOS device structure, and a method of fabricating the CMOS device, featuring a gate insulator layer comprised of a high k metal oxide layer, has been developed. The process features formation of recessed, heavily doped source/drain regions, and of vertical, polysilicon LDD spacers, prior to deposition of the high k metal oxide layer. Removal of a silicon nitride shape, previously used as a mask for definition of the recessed regions, which in turn are used for accommodation of the heavily doped source/drain regions, provides the space to be occupied by the high k metal oxide layer. The integrity of the high k, gate insulator layer, butted by the vertical polysilicon spacers, and overlying a channel region provided by the non-recessed portion of the semiconductor substrate, is preserved via delayed deposition of the metal oxide layer, performed after high temperature anneals such as the activation anneal for heavily doped source/drain regions, as well as the anneal used for metal silicide formation.
摘要翻译：已经开发了CMOS器件结构，以及制造具有由高k金属氧化物层构成的栅极绝缘体层的CMOS器件的方法。在沉积高k金属氧化物层之前，该工艺特征是形成凹陷的，重掺杂的源极/漏极区域以及垂直的多晶硅LDD间隔物。先前用作凹陷区域的掩模的氮化硅形状的去除，其又用于重掺杂源极/漏极区域的适应，提供了由高k金属氧化物层占据的空间。通过延迟沉积金属氧化物层，在高温下进行保存，通过垂直多晶硅间隔物对接的高k栅极绝缘体层的完整性，并覆盖由半导体衬底的非凹陷部分提供的沟道区域退火如重掺杂源极/漏极区的激活退火，以及用于金属硅化物形成的退火。

14. 发明授权

US06702396B1 Wheel cover having rotating wing plate 失效
标题翻译：轮盖有旋翼板
公开(公告)号：US06702396B1
公开(公告)日：2004-03-09
申请号：US10350029
申请日：2003-01-24
申请人： Ming-Fang Wang
发明人： Ming-Fang Wang
IPC分类号： B60B704
CPC分类号： B60B7/20
摘要： A wheel cover. The wheel cover includes engraved holes with special shapes on a circular disc of the wheel cover, latch members on the backside of the wheel cover, and the latch members define a diameter of an area on the wheel cover for embedding the steel wheel. A turning disc is disposed on the wheel cover. An axle is disposed on the axle and pivotally coupled to a bearing on the wheel cover. A wing plate is defined on the turning disc, and the wing plate rotates independently from the wheel cover when the vehicle is moving.
摘要翻译：轮罩。轮盖包括在轮盖的圆盘上具有特殊形状的雕刻孔，在轮盖的后侧上的闩锁构件，并且闩锁构件限定轮盖上的用于嵌入钢轮的区域的直径。转盘被设置在车轮罩上。轴设置在轴上并且枢转地联接到轮罩上的轴承。翼板限定在转盘上，当车辆移动时，翼板独立于车轮罩旋转。

15. 发明申请

US20130234498A1 Wheel Cover and Method for Making and Packaging It 审中-公开
标题翻译：车轮盖及其制造和包装方法
公开(公告)号：US20130234498A1
公开(公告)日：2013-09-12
申请号：US13413720
申请日：2012-03-07
申请人： Ming-Fang Wang
发明人： Ming-Fang Wang
IPC分类号： B60B7/06 , B26D7/27 , B21D53/32
CPC分类号： B60B7/06 , B60B7/04 , Y10T29/4954
摘要： A wheel cover and a method for making and packaging it are disclosed. The wheel cover includes a main body (1), and a plurality of locking members (13). Each of the locking members is formed integrally on the inner face of the main body. Each of the locking members has a first end provided with a support portion (134) connected with the main body and a second end provided with a retaining portion (133). Thus, the support portion of each of the locking members is bendable relative to the main body so as to reduce a whole height of each of the locking members relative to the main body.
摘要翻译：公开了一种轮罩及其制造和包装方法。轮盖包括主体（1）和多个锁定构件（13）。每个锁定构件一体地形成在主体的内表面上。每个锁定构件具有设置有与主体连接的支撑部分（134）的第一端和设有保持部分（133）的第二端。因此，每个锁定构件的支撑部分相对于主体是可弯曲的，以便减小每个锁定构件相对于主体的整体高度。

16. 发明授权

US08012824B2 Process to make high-K transistor dielectrics 有权
标题翻译：制造高K晶体管电介质的工艺
公开(公告)号：US08012824B2
公开(公告)日：2011-09-06
申请号：US11454596
申请日：2006-06-16
申请人： Liang-Gi Yao , Ming-Fang Wang , Shih-Chang Chen , Mong-Song Liang
发明人： Liang-Gi Yao , Ming-Fang Wang , Shih-Chang Chen , Mong-Song Liang
IPC分类号： H01L21/00
CPC分类号： H01L21/0228 , C23C16/56 , H01L21/02145 , H01L21/02153 , H01L21/02159 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02337 , H01L21/28185 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/4966 , H01L29/517
摘要： A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
摘要翻译：一种减少高k电介质层中的杂质的方法，包括以下步骤。提供基板。在衬底上形成具有杂质的高k电介质层。高k电介质层由MOCVD或ALCVD工艺形成。退火高k电介质层以减少高k电介质层内的杂质。

17. 发明授权

US07393766B2 Process for integration of a high dielectric constant gate insulator layer in a CMOS device 有权
标题翻译：在CMOS器件中集成高介电常数栅极绝缘体层的工艺
公开(公告)号：US07393766B2
公开(公告)日：2008-07-01
申请号：US11119951
申请日：2005-05-02
申请人： Ming-Fang Wang , Chien-Hao Chen , Liang-Gi Yao , Shih-Chang Chen
发明人： Ming-Fang Wang , Chien-Hao Chen , Liang-Gi Yao , Shih-Chang Chen
IPC分类号： H01L21/425
CPC分类号： H01L21/823857 , H01L21/823807 , H01L21/823814 , H01L29/665 , Y10S257/90
摘要： A CMOS device structure, and a method of fabricating the CMOS device, featuring a gate insulator layer comprised of a high k metal oxide layer, has been developed. The process features formation of recessed, heavily doped source/drain regions, and of vertical, polysilicon LDD spacers, prior to deposition of the high k metal oxide layer. Removal of a silicon nitride shape, previously used as a mask for definition of the recessed regions, which in turn are used for accommodation of the heavily doped source/drain regions, provides the space to be occupied by the high k metal oxide layer. The integrity of the high k, gate insulator layer, butted by the vertical polysilicon spacers, and overlying a channel region provided by the non-recessed portion of the semiconductor substrate, is preserved via delayed deposition of the metal oxide layer, performed after high temperature anneals such as the activation anneal for heavily doped source/drain regions, as well as the anneal used for metal silicide formation.
摘要翻译：已经开发了CMOS器件结构，以及制造具有由高k金属氧化物层构成的栅极绝缘体层的CMOS器件的方法。在沉积高k金属氧化物层之前，该工艺特征是形成凹陷的，重掺杂的源极/漏极区域以及垂直的多晶硅LDD间隔物。先前用作凹陷区域的掩模的氮化硅形状的去除，其又用于重掺杂源极/漏极区域的适应，提供了由高k金属氧化物层占据的空间。通过延迟沉积金属氧化物层，在高温下进行保存，通过垂直多晶硅间隔物对接的高k栅极绝缘体层的完整性，并覆盖由半导体衬底的非凹陷部分提供的沟道区域退火如重掺杂源极/漏极区的激活退火，以及用于金属硅化物形成的退火。

18. 发明授权

US07071066B2 Method and structure for forming high-k gates 失效
标题翻译：用于形成高k门的方法和结构
公开(公告)号：US07071066B2
公开(公告)日：2006-07-04
申请号：US10662845
申请日：2003-09-15
申请人： Ming-Fang Wang , Chia-Lin Chen , Chih-Wei Yang , Chi-Chun Chen , Tuo-Hung Hou , Yeou-Ming Lin , Liang-Gi Yao , Shih-Chang Chen
发明人： Ming-Fang Wang , Chia-Lin Chen , Chih-Wei Yang , Chi-Chun Chen , Tuo-Hung Hou , Yeou-Ming Lin , Liang-Gi Yao , Shih-Chang Chen
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/4763
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/3141 , H01L29/513
摘要： A method for forming an improved gate stack structure having improved electrical properties in a gate structure forming process A method for forming a high dielectric constant gate structure including providing a silicon substrate comprising exposed surface portions; forming an interfacial layer over the exposed surface portions having a thickness of less than about 10 Angstroms; forming a high dielectric constant metal oxide layer over the interfacial layer having a dielectric constant of greater than about 10; forming a barrier layer over the high dielectric constant metal oxide layer; forming an electrode layer over the barrier layer; and, etching according to an etching pattern through a thickness of the electrode layer, barrier layer, high dielectric constant material layer, and the interfacial layer to form a high dielectric constant gate structure.
摘要翻译：一种用于形成在栅极结构形成工艺中具有改进的电性能的改进的栅极堆叠结构的方法用于形成高介电常数栅极结构的方法，包括提供包括暴露表面部分的硅衬底; 在暴露的表面部分上形成具有小于约10埃的厚度的界面层; 在介电常数大于约10的界面层上形成高介电常数金属氧化物层; 在高介电常数金属氧化物层上形成阻挡层; 在阻挡层上形成电极层; 并且根据蚀刻图案通过电极层，阻挡层，高介电常数材料层和界面层的厚度进行蚀刻，以形成高介电常数栅极结构。

19. 发明申请

US20050168051A1 Rotating hubcap 审中-公开
标题翻译：旋转轮毂盖
公开(公告)号：US20050168051A1
公开(公告)日：2005-08-04
申请号：US10768161
申请日：2004-02-02
申请人： Ming-Fang Wang
发明人： Ming-Fang Wang
IPC分类号： B60B7/04 , B60B7/20 , B60J7/20
CPC分类号： B60B7/20
摘要： A rotating hubcap comprised of a hubcap having a hole in the center, a seat, and a bearing installed in the seat. A turntable is pivotably positioned in the seated bearing, a revolving member is fastened onto the turntable, the opening in the center of the revolving member is sleeved onto the shaft member on the turntable, and the shaft members on the turntable exposed through the revolving member opening are then inserted into the bearing, such that the revolving member gyrates independently as a motor vehicle is driven.
摘要翻译：一个旋转轮毂盖，其由在中心具有孔的轮毂盖，座和安装在座中的轴承组成。转台可枢转地定位在座椅轴承中，旋转构件紧固在转盘上，旋转件中心的开口套在转台上的轴件上，转台上的轴件通过旋转件暴露然后将开口插入到轴承中，使得当机动车被驱动时，旋转构件独立地旋转。

20. 发明授权

US06834416B2 Loose-leaf structure 失效
标题翻译：松叶结构
公开(公告)号：US06834416B2
公开(公告)日：2004-12-28
申请号：US10350025
申请日：2003-01-24
申请人： Ming-Fang Wang , Yin-Shu Yang
发明人： Ming-Fang Wang , Yin-Shu Yang
IPC分类号： E05D710
CPC分类号： B60P1/43 , E05D7/1066 , Y10T16/52 , Y10T16/53613 , Y10T16/53615 , Y10T16/551 , Y10T16/5595
摘要： The present invention makes use of an opening of a latch cover opening to engage the first loose leaf with the second loose leaf at a pivotal opening with a diameter smaller than the opening of the latch cover of the first loose leaf, and the latch cover of the first loose leaf is located between the two axle covers of the second loose leaf after they are coupled. Therefore, the two will not be separated from each other in the front-rear direction easily, so that the first and second loose leaves can be removed and assembled, and fixed securely after the assembling.
摘要翻译：本发明利用闩锁盖开口的开口，将第一松动叶片与第二松叶接合在一直径小于第一松叶片的闩锁盖的开口的枢转开口处，并且闩锁盖第一松叶在它们联接之后位于第二松叶的两个轴套之间。因此，两者不容易在前后方向上彼此分离，从而能够拆卸和组装第一和第二松散叶片，并在组装之后牢固地固定。

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