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11. 发明申请

US20090200492A1 ION IMPLANTATION METHOD AND APPARATUS 有权
标题翻译：离子植入方法和装置
公开(公告)号：US20090200492A1
公开(公告)日：2009-08-13
申请号：US12369307
申请日：2009-02-11
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： A61N5/00
CPC分类号： H01L21/265 , H01J37/20 , H01J37/304 , H01J37/3171 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/20235 , H01J2237/31703
摘要： Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount.
摘要翻译：使用离子束的束电流，对基板的剂量量和参考扫描速度，计算基板的扫描编号，其中小数点后的数字被截断的整数值。如果扫描次数小于2，则中止该过程。如果扫描次数等于或大于2，则确定扫描号是偶数还是奇数。如果扫描号为偶数，则将当前扫描号设置为实际的扫描号。如果扫描数是奇数，则获得比奇数扫描数小1的偶数扫描数，将所得到的偶数扫描数设定为实际扫描次数。通过使用实际扫描数，束电流和剂量来计算基板的实际扫描速度。

12. 发明申请

US20110248190A1 WAFER HANDLING METHOD AND ION IMPLANTER 失效
标题翻译： WAFER处理方法和离子植入
公开(公告)号：US20110248190A1
公开(公告)日：2011-10-13
申请号：US12938856
申请日：2010-11-03
申请人： Kohei Tanaka , Takashi Nogami , Masayoshi Hino
发明人： Kohei Tanaka , Takashi Nogami , Masayoshi Hino
IPC分类号： G21K5/10 , H01L21/68
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/204 , H01J2237/2482 , H01L21/67259 , H01L21/681 , H01L21/68742
摘要： An ion implanter performs ion implantation by irradiating a wafer having a notch at its outer peripheral region by an ion beam. In ion implanter, a twist angle adjustment mechanism is configured to adjust a twist angle, an aligner is configured to adjust an alignment angle, a wafer transfer device is configured to transfer the wafer between the aligner and the twist angle adjustment mechanism, an image processing device is configured to detect the twist angle of the wafer on the twist angle adjustment mechanism, and a control device is configured to carry out a twist control in which the wafer is rotated by the twist angle adjustment mechanism by an angle obtained from a first difference between the detected twist angle and the alignment angle and a second difference between the alignment angle and a target twist angle given as one of ion implantation conditions.
摘要翻译：离子注入机通过离子束在其外周区域照射具有凹口的晶片来进行离子注入。在离子注入机中，扭转角度调节机构被配置为调节扭曲角度，对准器构造成调节对准角度，晶片传送装置被配置为在对准器和扭转角调节机构之间传送晶片，图像处理装置被配置为检测扭转角度调节机构上的晶片的扭曲角度，并且控制装置被配置为执行扭转控制，其中晶片由扭转角调节机构旋转角度从第一差异在检测到的扭转角和对准角之间，以及作为离子注入条件之一给出的对准角和目标扭转角之间的第二差。

13. 发明授权

US07935945B2 Ion implantation method and apparatus 有权
标题翻译：离子注入方法和装置
公开(公告)号：US07935945B2
公开(公告)日：2011-05-03
申请号：US12369290
申请日：2009-02-11
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01L21/265 , H01J37/20 , H01J37/304 , H01J37/3171 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/20235 , H01J2237/31703
摘要： Using a beam current of an ion beam, and a dose amount to a substrate, and an initial value of a scan number of the substrate set to 1, a scan speed of the substrate is calculated. If the scan speed is within the range, the current scan number and the current scan speed are set as a practical scan number and a practical scan speed, respectively. If the scan speed is higher than the upper limit of the range, the calculation process is aborted. If the scan speed is lower than the lower limit of the range, the scan number is incremented by one to calculate a corrected scan number. A corrected scan speed is calculated by using the corrected scan number, etc. The above steps are repeated until the corrected scan speed is within the allowable scan speed range.
摘要翻译：使用离子束的束电流和对衬底的剂量，将衬底的扫描次数的初始值设定为1，计算衬底的扫描速度。如果扫描速度在该范围内，则将当前扫描次数和当前扫描速度分别设定为实际扫描次数和实际扫描速度。如果扫描速度高于该范围的上限，则中止计算过程。如果扫描速度低于该范围的下限，则将扫描数增加1以计算校正的扫描数。通过使用校正的扫描数等来计算校正的扫描速度。重复上述步骤，直到校正的扫描速度在允许的扫描速度范围内。

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