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11. 发明授权

US08597743B2 Aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体
公开(公告)号：US08597743B2
公开(公告)日：2013-12-03
申请号：US12063389
申请日：2006-08-04
申请人： Yukihiro Kanechika , Masanobu Azuma
发明人： Yukihiro Kanechika , Masanobu Azuma
IPC分类号： B32B1/00 , B32B1/02 , B32B1/08 , C04B35/00
CPC分类号： H01J61/302 , C04B35/581 , C04B2235/3208 , C04B2235/3222 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/6586 , C04B2235/6587 , C04B2235/662 , C04B2235/721 , C04B2235/723 , C04B2235/725 , C04B2235/786 , C04B2235/963 , H01J61/827 , Y10T428/131 , Y10T428/24479
摘要： Provided is an aluminum nitride sintered body with high optical transmissivity and which has a smooth surface in the unpolished condition after firing. The aluminum nitride sintered body has an oxygen concentration of 450 ppm or less, a concentration of impurity elements excluding oxygen, nitrogen, and aluminum of 350 ppm or less, and an average crystal grain diameter of between 2 μm and 20 μm, and also has an arithmetic mean surface height Ra of 1 μm or less and a maximum height Rz of 10 μm or less in the unpolished condition after firing.
摘要翻译：提供具有高透光率的氮化铝烧结体，并且在烧成后具有未抛光状态的光滑表面。氮化铝烧结体的氧浓度为450ppm以下，除氧，氮，铝以外的杂质元素浓度为350ppm以下，平均结晶粒径为2μm〜20μm，并且还具有烧成后的未磨光状态下的算术平均表面高度Ra为1μm以下，最大高度Rz为10μm以下。

12. 发明申请

US20130313567A1 BASE SUBSTRATE, GALLIUM NITRIDE CRYSTAL MULTI-LAYER SUBSTRATE AND PRODUCTION PROCESS THEREFOR 审中-公开
标题翻译：基底，氮化钠晶体多层基板及其生产工艺
公开(公告)号：US20130313567A1
公开(公告)日：2013-11-28
申请号：US13983257
申请日：2012-03-02
申请人： Hiroshi Furuya , Masanobu Azuma , Kazuyuki Tadatomo , Narihito Okada
发明人： Hiroshi Furuya , Masanobu Azuma , Kazuyuki Tadatomo , Narihito Okada
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01S2304/12 , Y10T428/2457
摘要： A GaN crystal multi-layer substrate having surfaces with various crystal orientations formed on a sapphire base substrate, such as a substrate whose principal surface is a plane which is the a-plane, a plane which is the m-plane, or a plane having a low threading dislocation density and high crystal quality of a GaN crystal, and a production process therefor.The gallium nitride crystal multi-layer substrate comprises a sapphire base substrate and a gallium nitride crystal layer which is formed on the substrate by crystal growth, wherein the gallium nitride crystal layer is formed by lateral crystal growth from sidewalls which are c-planes of a plurality of grooves formed in the principal surface of the sapphire base substrate in such a manner that the surface thereof is parallel to the principal surface of the base substrate and constituted of a nonpolar a-plane or m-plane or a semipolar plane, and the dark-spot density of the gallium nitride crystal is less than 2×108/cm2, preferably not more than 1.85×108/cm2, particularly preferably not more than 1.4×108/cm2.
摘要翻译：具有形成在蓝宝石基底基板上的具有各种晶体取向的表面的GaN晶体多层基板，例如其主表面为a面的<11-20平面的基板，1-100平面，是具有低穿透位错密度和GaN晶体的高结晶质量的m面或<11-22>面及其制造方法。氮化镓晶体多层基板包括蓝宝石基底基板和通过晶体生长在基板上形成的氮化镓晶体层，其中氮化镓晶体层是通过侧壁晶体生长而形成的，所述侧壁是侧壁的c面多个槽形成在蓝宝石基底基板的主表面上，使得其表面平行于基底基板的主表面，并由非极性a面或m面或半极性<11-22 >面，氮化镓晶体的暗点密度小于2×10 8 / cm 2，优选为1.85×10 8 / cm 2以下，特别优选为1.4×10 8 / cm 2以下。

13. 发明申请

US20130298822A1 SILICON MELT CONTACT MEMBER, PROCESS FOR PRODUCTION THEREOF, AND PROCESS FOR PRODUCTION OF CRYSTALLINE SILICON 审中-公开
标题翻译：硅胶接触件，其生产工艺及其生产方法
公开(公告)号：US20130298822A1
公开(公告)日：2013-11-14
申请号：US13997498
申请日：2012-01-26
申请人： Ryuichi Komatsu , Hironori Itoh , Masanobu Azuma
发明人： Ryuichi Komatsu , Hironori Itoh , Masanobu Azuma
IPC分类号： C30B11/00 , C30B11/02
CPC分类号： C30B11/002 , C01B33/02 , C04B38/0615 , C04B2111/00612 , C30B9/04 , C30B11/00 , C30B11/02 , C30B29/06 , C30B29/64 , H01L31/0352 , H01L31/035281 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1092 , C04B35/584 , C04B38/0054 , C04B38/0074
摘要： Provided are a silicon melt contact member which is markedly improved in liquid repellency to a silicon melt, which can retain the liquid repellency permanently, and which is suitable for production of crystalline silicon; and a process for efficient production of crystalline silicon, particularly, spherical crystalline silicon having high crystallinity, by use of the silicon melt contact member. A silicon melt contact member having a porous sintered body layer present on its surface, preferably the sintered body layer being present on a substrate of a ceramic material such as aluminum nitride, wherein the porous sintered body layer consists essentially of silicon nitride, has a thickness of 10 to 500 μm, and has, dispersed therein, many pores preferably having an average equivalent circle diameter of 1 to 25 μm at a pore-occupying area ratio of 30 to 80%, the pores connecting to each other to form communicating holes having a depth of 5 μm or more.
摘要翻译：提供了一种硅熔体接触构件，其显着地提高了对硅熔体的疏液性，其可以永久地保持拒液性，并且适用于晶体硅的制造; 以及通过使用硅熔融接触构件有效地生产结晶硅，特别是具有高结晶度的球形结晶硅的方法。在其表面上存在多孔烧结体层的硅熔体接触部件，优选烧结体层存在于诸如氮化铝的陶瓷材料的基板上，其中多孔烧结体层主要由氮化硅组成，其厚度 10〜500μm，并且在孔占据面积比为30〜80％的范围内分散有优选平均当量圆直径为1〜25μm的许多孔，所述孔彼此连接以形成具有深度5 mum以上。

14. 发明申请

US20120240845A1 PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL 审中-公开
标题翻译：硝酸铝单晶的生产方法
公开(公告)号：US20120240845A1
公开(公告)日：2012-09-27
申请号：US13512627
申请日：2010-11-29
申请人： Hiroyuki Fukuyama , Masanobu Azuma , Kazuya Takada , Takeshi Hattori
发明人： Hiroyuki Fukuyama , Masanobu Azuma , Kazuya Takada , Takeshi Hattori
IPC分类号： C30B25/14 , C30B25/16
CPC分类号： C30B29/403 , C30B23/00 , C30B23/007 , C30B25/00 , C30B29/62
摘要： Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that, at least a part of the carbon body does not directly contact with the raw material gas generation source, at least a part of the raw material gas generation source does not directly contact with the carbon body, the raw material gas generation source and the carbon body are positioned to make a space in which a clearance between the raw material gas generation source, which does not contact with the carbon body, and the carbon body, which does not contact with the raw material gas generation source, is 0.01 to 50 mm, and a heat temperature and a nitrogen gas flow rate are set so as to satisfy a condition for aluminum nitride deposition in a space between the raw material gas generation source, which does not contact with carbon body, and the carbon body, which does not contact with raw material gas generation source.
摘要翻译：公开了一种新颖的方法，其中具有良好结晶度的氮化铝单晶被有效且容易地制造。在生成铝气体或氧化铝气体的原料气体发生源的存在下生成氮气的氮化铝单晶的制造方法和碳体，然后生长氮化铝单晶在加热条件下其特征在于，所述碳体的至少一部分不与所述原料气体发生源直接接触，所述原料气体发生源的至少一部分不与碳体直接接触，所述原料气体产生源并且碳体被定位成使与未与碳体接触的原料气体发生源与不与原料气体发生源接触的碳体之间的间隙为0.01的空间至50mm，并且设定加热温度和氮气流量以满足与碳体不接触的原料气体发生源与碳体之间的空间中的氮化铝沉积的条件，其不与原料气体发生源接触。

15. 发明申请

US20090174303A1 Cement 有权
标题翻译：水泥
公开(公告)号：US20090174303A1
公开(公告)日：2009-07-09
申请号：US12097580
申请日：2006-12-15
申请人： Yukihiro Kanechika , Masanobu Azuma
发明人： Yukihiro Kanechika , Masanobu Azuma
IPC分类号： H01J1/18 , H01J9/00 , C04B14/48
CPC分类号： H01J61/366 , C04B35/581 , C04B35/628 , C04B37/025 , C04B37/026 , C04B2235/3208 , C04B2235/3222 , C04B2235/3865 , C04B2235/3895 , C04B2235/404 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/6021 , C04B2235/652 , C04B2235/6587 , C04B2235/72 , C04B2235/94 , C04B2235/9623 , C04B2235/9653 , C04B2235/9661 , C04B2237/08 , C04B2237/122 , C04B2237/366 , C04B2237/403 , H01J61/302 , H01J61/82
摘要： A cement for bonding an arc tube body made of an aluminum nitride sintered body and an electrode support made of molybdenum achieves high gas tightness in the obtainable arc tube without impairing the excellent translucency of the aluminum nitride sintered body. The cement contains a molybdenum powder and an aluminum nitride powder, and the total amount of metalloid elements, rare-earth elements and metal elements (except the rare-earth elements and aluminum element) corresponding to the following conditions (1) and (2) is 300 ppm or less: (1) metal elements having a melting point of 2000° C. or lower, and (2) metal elements having an ion radius smaller than that of aluminum.
摘要翻译：用于粘合由氮化铝烧结体制成的电弧管体和由钼制成的电极支撑体的水泥在得到的电弧管中实现高气密性，而不损害氮化铝烧结体的优异的半透明性。水泥含有钼粉末和氮化铝粉末，对应于以下条件（1）和（2）的准金属元素，稀土元素和金属元素（稀土元素和铝元素除外）的总量，为300ppm以下：（1）熔点为2000℃以下的金属元素，（2）离子半径小于铝的金属元素。

16. 发明申请

US20090155625A1 Methods of Joining Aluminum Nitride Sinters and Aluminum Nitride Joined Articles 审中-公开
标题翻译：加入氮化铝烧结剂和氮化铝连接件的方法
公开(公告)号：US20090155625A1
公开(公告)日：2009-06-18
申请号：US12225665
申请日：2007-03-29
申请人： Yukihiro Kanechika , Masanobu Azuma , Masaki Yasuoka , Koji Watari
发明人： Yukihiro Kanechika , Masanobu Azuma , Masaki Yasuoka , Koji Watari
IPC分类号： C04B37/00 , B32B9/00
CPC分类号： C04B35/581 , C04B37/005 , C04B2235/3208 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/422 , C04B2235/5436 , C04B2235/5445 , C04B2235/658 , C04B2235/667 , C04B2237/08 , C04B2237/366 , C04B2237/76
摘要： [Problem] It is an object to provide a joining method that enables to join aluminum nitride sinters together efficiently and tightly.[Means for solution] A method of joining an aluminum nitride sinter includes placing an inclusion including a sintering aid between a surface to be joined of one aluminum nitride sinter and a surface to be joined of the other aluminum nitride sinter, and heating the inclusion by electromagnetic wave irradiation, thereby joining the aluminum nitride sinters together.
摘要翻译：本发明的目的在于提供能够将氮化铝烧结体有效且紧密地接合在一起的接合方法。 [解决方案]接合氮化铝烧结体的方法包括将包含烧结助剂的夹杂物放置在一个氮化铝烧结体的待接合表面和另一个氮化铝烧结体的待接合表面之间，并通过电磁波照射，从而将氮化铝烧结体接合在一起。

17. 发明申请

US20090088312A1 Aluminum Nitride Sinter, Slurry, Green Object, and Degreased Object 审中-公开
标题翻译：氮化铝烧结剂，浆料，绿色物体和脱脂物体
公开(公告)号：US20090088312A1
公开(公告)日：2009-04-02
申请号：US11917725
申请日：2006-06-15
申请人： Hideki Umekawa , Masanobu Azuma
发明人： Hideki Umekawa , Masanobu Azuma
IPC分类号： C04B35/582
CPC分类号： C04B35/581 , C04B35/6261 , C04B35/62635 , C04B35/6264 , C04B35/632 , C04B35/63432 , C04B35/638 , C04B2235/3222 , C04B2235/3225 , C04B2235/3895 , C04B2235/5436 , C04B2235/5463 , C04B2235/6025 , C04B2235/608 , C04B2235/77 , C04B2235/786 , C04B2235/85 , C04B2235/95 , C04B2235/96 , C04B2235/9607
摘要： An aluminum nitride sinter includes aluminum nitride crystal grains and a grain boundary phase derived from a sintering aid. In any cross section in a surface region extending up to 100 μm from the surface of the sinter, the proportion of the area of a grain boundary phase having a circumscribed circle diameter of 1 μm or less to the total area of the grain boundary phase is at least 50%, and the average grain diameter of the aluminum nitride crystal grains is in the range of 3.0 to 7.0 μm. This aluminum nitride sinter can be produced from an aluminum nitride slurry having a specific grain size distribution, an aluminum nitride green object having a specific submerged density, or an aluminum nitride degreased object having a specific pore diameter.
摘要翻译：氮化铝烧结体包括氮化铝晶粒和来自烧结助剂的晶界相。在从烧结体的表面延伸至100μm的表面区域的任何截面中，具有1μm或更小的外切圆直径的晶界相的面积相对于晶界相的总面积的比例为至少50％，氮化铝晶粒的平均粒径在3.0〜7.0μm的范围内。该氮化铝烧结体可以由具有特定粒度分布的氮化铝浆料，具有特定浸没密度的氮化铝绿色物体或具有特定孔径的氮化铝脱脂物质制造。

18. 发明申请

US20080076658A1 Aluminum nitride sintered body 审中-公开
标题翻译：氮化铝烧结体
公开(公告)号：US20080076658A1
公开(公告)日：2008-03-27
申请号：US11527323
申请日：2006-09-26
申请人： Yukihiro Kanechika , Masanobu Azuma
发明人： Yukihiro Kanechika , Masanobu Azuma
IPC分类号： C04B35/581
CPC分类号： C04B35/6261 , C04B35/581 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3865 , C04B2235/3895 , C04B2235/445 , C04B2235/446 , C04B2235/5409 , C04B2235/5436 , C04B2235/652 , C04B2235/6587 , C04B2235/662 , C04B2235/9615 , C04B2235/9623 , C04B2235/9653
摘要： [Object] It is an object of the present invention to provide an aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties.[Solution means] The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
摘要翻译：本发明的目的是提供一种具有耐等离子体气体和高导热性并具有优异光学特性的氮化铝烧结体。 [解决方案]本发明的氮化铝烧结体的特征在于，在使用正电子湮灭法的缺陷分析中确定的在氮化铝晶体中在180ps（皮秒）期间内消除的正电子的比例不小于90％，并且烧结体优选具有不小于200W / mK的热导率。

19. 发明授权

US08921980B2 Aluminum nitride single crystal forming polygonal columns and a process for producing a plate-shaped aluminum nitride single crystal using the same 有权
标题翻译：氮化铝单晶形成多边形柱和使用其制造板状氮化铝单晶的方法
公开(公告)号：US08921980B2
公开(公告)日：2014-12-30
申请号：US12743703
申请日：2008-11-18
申请人： Hiroshi Amano , Yukihiro Kanechika , Masanobu Azuma
发明人： Hiroshi Amano , Yukihiro Kanechika , Masanobu Azuma
IPC分类号： C30B29/40 , C30B23/00
CPC分类号： C30B29/403 , C30B23/00 , Y10T428/2973
摘要： An aluminum nitride single crystal in the form of polygonal columns, the polygonal columns having the following properties [a] to [c]: [a] the content of a metal impurity is below a detection limit, [b] the average bottom area is from 5×103 to 2×105 μm2, and [c] the average height is 50 μm to 5 mm. The above aluminum nitride single crystal is preferably obtainable in a method including the steps of sublimating an aluminum nitride starting material (A) containing 0.1 to 30% by mass of a rare earth oxide by heating the starting material at a temperature of not lower than 2000° C., depositing aluminum nitride on a hexagonal single crystal substrate and thereby growing aluminum nitride single crystal in the shape of polygonal columns.
摘要翻译：多边形柱状的氮化铝单晶，具有以下性质[a]〜[c]的多边形柱：[a]金属杂质的含量低于检测限，[b]平均底面积为 5×103〜2×105μm2，[c]平均高度为50μm〜5mm。上述氮化铝单晶优选可通过以下方法获得：包括以下步骤的方法：在不低于2000℃的温度下加热起始材料，使含有0.1-30质量％的稀土氧化物的氮化铝原料（A）升华在六边形单晶衬底上沉积氮化铝，从而生长为多边形柱状的氮化铝单晶。

20. 发明申请

US20100255304A1 Aluminum Nitride Single Crystal Forming Polygonal Columns and a Process for Producing a Plate-Shaped Aluminum Nitride Single Crystal Using the Same 有权
标题翻译：氮化铝单晶形成多边形柱和使用其制造板状氮化铝单晶的方法
公开(公告)号：US20100255304A1
公开(公告)日：2010-10-07
申请号：US12743703
申请日：2008-11-18
申请人： Hiroshi Amano , Yukihiro Kanechika , Masanobu Azuma
发明人： Hiroshi Amano , Yukihiro Kanechika , Masanobu Azuma
IPC分类号： C01B21/072 , C30B23/02
CPC分类号： C30B29/403 , C30B23/00 , Y10T428/2973
摘要： The present invention provides an aluminum nitride single crystal forming polygonal columns, the polygonal columns having the following properties [a] to [c]:[a] the content of a metal impurity is below the detection limit, [b] the average bottom area is from 5×103 to 2×105 μm2, and [c] the average height is 50 μm to 5 mm. The above aluminum nitride single crystal forming polygonal columns is preferably obtainable by sublimating an aluminum nitride starting material (A) containing 0.1 to 30% by mass of a rare earth oxide by heating the starting material at a temperature of not lower than 2000° C., depositing aluminum nitride on a hexagonal single crystal substrate and thereby growing aluminum nitride single crystal in the shape of polygonal columns.
摘要翻译：本发明提供一种形成氮化铝单晶的多边形柱，多边形柱具有以下特性[a]至[c]：[a]金属杂质的含量低于检测限，[b]平均底面积为5×103〜2×105μm2，[c]平均高度为50μm〜5mm。上述氮化铝单晶形成多边形柱优选通过在不低于2000℃的温度下加热原料来升华含有0.1〜30质量％的稀土类氧化物的氮化铝原料（A）而获得。在六边形单晶衬底上沉积氮化铝，从而生长出多边形柱状的氮化铝单晶。

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