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11. 发明授权

US4626103A Focus tracking system 失效
标题翻译：焦点跟踪系统
公开(公告)号：US4626103A
公开(公告)日：1986-12-02
申请号：US594939
申请日：1984-03-29
申请人： Martin Feldman , David N. Reece , John S. Wagner
发明人： Martin Feldman , David N. Reece , John S. Wagner
IPC分类号： G01B9/02 , G01B11/14
CPC分类号： G03F9/7026
摘要： A method and apparatus are disclosed for tracking the position of surfaces during certain processing such as optical projection printing. Light from a line or point source is made incident on the surface at a small angle to produce interference fringes between the reflected light and a reference beam. Any movement of the surface causes a shifting of the fringe pattern which can be detected by appropriate means such as a slit or grating and photodiode combination.
摘要翻译：公开了用于在诸如光学投影印刷的某些处理期间跟踪表面的位置的方法和装置。来自线或点光源的光以小角度入射在表面上，以产生反射光和参考光束之间的干涉条纹。表面的任何运动导致条纹图案的移动，该图案可以通过诸如狭缝或光栅和光电二极管组合的适当装置来检测。

12. 发明授权

US4595289A Inspection system utilizing dark-field illumination 失效
标题翻译：采用暗场照明的检测系统
公开(公告)号：US4595289A
公开(公告)日：1986-06-17
申请号：US573816
申请日：1984-01-25
申请人： Martin Feldman , Lynn O. Wilson
发明人： Martin Feldman , Lynn O. Wilson
IPC分类号： G01B11/24 , G01B11/245 , G01N21/88 , G01N21/956 , G03F1/84 , G03F7/20 , H01L21/30 , H01L21/66 , G01B11/00
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/70483
摘要： Integrated-circuit wafers and the lithographic masks and reticles used in their fabrication must be inspected for defects. Conventional systems accomplish such inspection by bright-field illumination and comparison of corresponding portions of two supposedly identical patterns on the workpiece. The minimum-size defect that can be so detected is set by misalignment between the patterns. Dark-field illumination of the portions to be compared significantly enhances the detection capabilities of such an inspection system. For a given misalignment, dark-field illumination permits the detection of defects at least four times smaller than those detectable in a conventional bright-field-illuminated system.
摘要翻译：必须检查集成电路晶片及其制造中使用的光刻掩模和掩模版的缺陷。常规系统通过明场照明来完成这种检查，并且将两个所假定的相同图案的对应部分在工件上进行比较。可以如此检测到的最小尺寸缺陷是通过图案之间的未对准来设定的。要比较的部分的暗场照明显着增强了这种检查系统的检测能力。对于给定的未对准，暗场照明允许检测到的缺陷比常规亮场照明系统中可检测的缺陷少至少四倍。

13. 发明授权

US4326805A Method and apparatus for aligning mask and wafer members 失效
标题翻译：用于对准掩模和晶片构件的方法和装置
公开(公告)号：US4326805A
公开(公告)日：1982-04-27
申请号：US139544
申请日：1980-04-11
申请人： Martin Feldman , Alan D. White , Donald L. White
发明人： Martin Feldman , Alan D. White , Donald L. White
IPC分类号： H01L21/30 , G03F9/00 , G03F9/02 , H01L21/027 , G01B11/27
CPC分类号： G03F9/7076 , G03F9/703
摘要： Zone plate patterns (12,20,61,62) formed on spaced-apart mask and wafer members (10,60) are utilized for alignment purposes in the fabrication of integrated circuits. By providing off-axis illumination of the patterns, a significant mask-to-wafer alignment capability is provided in an X-ray lithographic system. This capability includes being able to correct for so-called magnification errors that arise from physical distortions in the mask and/or wafer or in other components of the system. These errors are compensated for by utilizing the zone plate patterns to form alignment marks that serve as a basis for adjusting the mask-to-wafer separation.
摘要翻译：形成在间隔开的掩模和晶片构件（10,60）上的区域板图案（12,20,61,62）用于集成电路制造中的对准目的。通过提供图案的离轴照明，在X射线光刻系统中提供了显着的掩模到晶片对准能力。该能力包括能够校正由掩模和/或晶片或系统的其它部件中的物理失真引起的所谓放大误差。这些误差通过利用区域板图案来补偿，以形成用作调整掩模到晶片间隔的基础的对准标记。

14. 发明授权

US3998639A Methods for determining feature-size accuracy of circuit patterns 失效
标题翻译：确定电路图形特征尺寸精度的方法
公开(公告)号：US3998639A
公开(公告)日：1976-12-21
申请号：US525210
申请日：1974-11-19
申请人： Martin Feldman , Donald Lawrence White
发明人： Martin Feldman , Donald Lawrence White
IPC分类号： G03C5/02 , G03C9/02 , G03C5/00
CPC分类号： G03C9/02 , G03C5/02
摘要： In IC fabrication, feature size accuracy is monitored by making a test pattern composed of grating lines in proximity to two reference patterns. With the proper feature size, the test pattern will visually appear to have a shade of grey intermediate that of the two reference patterns. Too small a feature size will make the test pattern lighter, while too large a feature size will make it appear darker.
摘要翻译：在IC制造中，通过将由格栅线组成的测试图形靠近两个参考图案来监视特征尺寸精度。具有适当的特征尺寸，测试图案将在视觉上看起来具有两个参考图案之间的灰色中间色调。太小的功能尺寸将使测试图案更轻，而功能尺寸过大会使其看起来更暗。

15. 发明申请

US20210038081A1 CONTACT-TYPE ENDOSCOPE SERS PROBE, AND RELATED METHODS 有权
公开(公告)号：US20210038081A1
公开(公告)日：2021-02-11
申请号：US17078955
申请日：2020-10-23
申请人： Martin Feldman , Dooyoung Hah
发明人： Martin Feldman , Dooyoung Hah
IPC分类号： A61B5/00 , G01N21/65 , A61B1/06 , A61B1/00 , G01J3/44 , G01J3/02
摘要： A contact-type endoscope surface enhanced Raman scattering (SERS) probe includes a gradient-index (GRIN) lens, a transparent substrate adhered to the GRIN lens, and a rough metallic layer adhered to an opposite side of the transparent substrate from the GRIN lens. The GRIN lens focuses light from a Raman spectrometer onto the rough metallic layer, and the rough metallic layer is positioned at the distal end of the contact-type endoscope SERS probe.

16. 发明授权

US06440619B1 Method of distortion compensation by irradiation of adaptive lithography membrane masks 失效
标题翻译：通过适应光刻膜掩模照射的失真补偿方法
公开(公告)号：US06440619B1
公开(公告)日：2002-08-27
申请号：US09578572
申请日：2000-05-25
申请人： Martin Feldman
发明人： Martin Feldman
IPC分类号： G03C500
CPC分类号： G03F1/22 , G03F1/72 , Y10S430/143 , Y10S430/146 , Y10S430/168
摘要： Techniques are disclosed to compensate for distortions in lithography by locally heating the membrane in a lithographic mask. The techniques may be used both to shrink and to expand areas of the mask locally, in order to adjust for varying magnitudes and signs of distortion. In one embodiment the correction method comprises two steps: (1) A send-ahead wafer is exposed and measured by conventional means to determine the overlay errors at several points throughout the field. (2) During exposure of subsequent wafers, calibrated beams of light are focused on the mask. The heating from the absorbed light produces displacements that compensate for the overlay errors measured with the send-ahead wafer. Any source of distortion may be corrected—for example, distortion appearing on the mask initially, distortion that only develops on the mask over time, or distortion on the wafer. In another embodiment, a reference pattern is formed on the membrane as a means of measuring mask distortion, and the heat input distribution needed to correct distortion is determined by subsequent measurements of the reference pattern. In this alternative embodiment, any source of distortion in the mask may be corrected.
摘要翻译：公开了通过局部加热光刻掩模中的膜来补偿光刻中的变形的技术。这些技术可以同时用于收缩和局部扩大掩模的区域，以便调整变化的幅度和失真的迹象。在一个实施例中，校正方法包括两个步骤：（1）通过传统手段对发射晶片进行曝光和测量，以确定整个场中的几个点处的覆盖误差。（2）在后续晶片曝光期间，校准光束聚焦在掩模上。来自吸收光的加热产生位移，补偿由发射晶片测量的重叠误差。可以校正任何失真源 - 例如，最初出现在掩模上的失真，仅在掩模上随时间发生的失真或晶片上的失真。在另一个实施例中，作为测量掩模失真的手段在膜上形成参考图案，并且通过参考图案的后续测量来确定校正失真所需的热输入分布。在该替代实施例中，可以校正掩模中的任何失真源。

17. 发明授权

US6018422A Three-dimensional microstructures and methods for making three-dimensional microstructures 失效
标题翻译：制作三维微结构的三维微结构和方法
公开(公告)号：US6018422A
公开(公告)日：2000-01-25
申请号：US165789
申请日：1998-10-02
申请人： Martin Feldman
发明人： Martin Feldman
IPC分类号： G02B3/00 , G02B23/00 , G02B27/10
CPC分类号： G02B23/00 , G02B3/005 , G02B3/0056
摘要： Methods are disclosed for making microstructures. In one method, the resist layer is reversibly deformed during exposure. When the resist is flattened and developed after exposure, non-vertical features result that are not obtainable through other existing means. One application of this method is to make nested cones suitable for use as a highly efficient x-ray lens. In another disclosed method, "halftone" lithography is used to generate microstructures having features whose height may vary continuously. One application of this method is to make a novel telescope array, a thin film having telescopic magnification properties.
摘要翻译：公开了制造微结构的方法。在一种方法中，抗蚀剂层在曝光期间可逆地变形。当抗蚀剂在曝光后变平且显影时，不能通过其他现有方法获得非垂直特征。该方法的一个应用是使嵌套锥体适合用作高效x射线透镜。在另一公开的方法中，使用“半色调”光刻来产生具有其高度可连续变化的特征的微结构。该方法的一个应用是制造一种新型的望远镜阵列，具有伸缩放大特性的薄膜。

18. 发明授权

US5424549A Scanning systems for high resolution e-beam and X-ray lithography 失效
标题翻译：用于高分辨率电子束和X射线光刻的扫描系统
公开(公告)号：US5424549A
公开(公告)日：1995-06-13
申请号：US136300
申请日：1993-10-14
申请人： Martin Feldman
发明人： Martin Feldman
IPC分类号： G03F7/20 , G21K1/02 , G21K5/02 , H01J37/317
CPC分类号： G03F7/70058 , G03F7/70216 , G21K1/025 , G21K5/02
摘要： An electron-beam lithography apparatus and method, including an electron source with a mask or photocathode for generating a patterned electron beam; an electron-sensitive resist layer; a conductive plate with a slit, located between the electron source and the resist layer, with the patterned electron beam passing only through the slit; an electric field between the electron source and the conductive plate to accelerate electrons, with the conductive plate causing the electric field between the plate and the resist to be substantially zero; a magnetic field between the electron source and the resist, to focus electrons on the resist; and alignment device for synchronously scanning the mask or photocathode and the resist at the same velocity relative to the slit and to the electron source, and at zero velocity relative to each other, so that substantially all of the pattern of the patterned electron beam is imaged on the resist without substantial change in size.
摘要翻译：一种电子束光刻设备和方法，包括具有用于产生图案化电子束的掩模或光电阴极的电子源; 电子敏感抗蚀剂层; 具有狭缝的导电板，位于电子源和抗蚀剂层之间，图案化电子束仅通过狭缝; 电子源和导电板之间的电场以加速电子，导电板使得板和抗蚀剂之间的电场基本上为零; 电子源和抗蚀剂之间的磁场，以将电子聚焦在抗蚀剂上; 以及对准装置，用于以相对于狭缝和电子源的相同速度同时扫描掩模或光电阴极和抗蚀剂，并且以相对于彼此的零速度，使得图案化电子束的基本上所有图案被成像在抗蚀剂上没有大的变化。

19. 发明授权

US5123743A Lithography mask inspection 失效
标题翻译：光刻面膜检查
公开(公告)号：US5123743A
公开(公告)日：1992-06-23
申请号：US486504
申请日：1990-02-28
申请人： Martin Feldman
发明人： Martin Feldman
IPC分类号： G03F1/22 , G03F1/84 , G03F7/20
CPC分类号： G03F1/84 , G03F7/70616 , G03F1/22
摘要： A method of detecting defects in a lithography mask by exposing a first mask onto a positive resist, and a second, ostensibly identical mask onto a negative resist. Remaining particles of resist after development correspond to spots in the first mask, or to holes in the second mask. The process may be repeated with the tones of the resists reversed to detect holes in the first mask, or spots in the second mask.
摘要翻译：一种通过将第一掩模曝露在正性抗蚀剂上的第二表面上相同的掩模来检测光刻掩模中的缺陷的方法。显影后抗蚀剂的剩余颗粒对应于第一掩模中的斑点或第二掩模中的孔。可以重复该过程，其中抗蚀剂的色调反转以检测第一掩模中的孔或第二掩模中的斑点。

20. 发明授权

US5004321A Resolution confocal microscope, and device fabrication method using same 失效
标题翻译：分辨率共焦显微镜，以及使用其的器件制造方法
公开(公告)号：US5004321A
公开(公告)日：1991-04-02
申请号：US387248
申请日：1989-07-28
申请人： Martin Feldman , Princess E. Simpson
发明人： Martin Feldman , Princess E. Simpson
IPC分类号： G01B11/00 , G01B11/02 , G02B21/00 , G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70616 , G02B21/0072 , G03F7/70641 , Y10S359/90
摘要： A new confocal microscope and a new device fabrication method in which linewidth control is achieved using the new confocal microscope are disclosed. This new confocal microscope has a configuration which achieves multiple passes, e.g., three, four, five, six, seven or more passes, of the incident light through the objective lens of the microscope. As a consequence, the new confocal microscope exhibits a smaller effective depth of focus and a smaller effective resolution than a conventional confocal microscope.

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