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    • 16. 发明授权
    • Process monitoring and thickness measurement from the back side of a
semiconductor body
    • 从半导体主体的背面进行过程监控和厚度测量
    • US5724144A
    • 1998-03-03
    • US674855
    • 1996-07-03
    • Karl Paul Ludwig MullerKatsuya OkumuraTheodore G. Van Kessel
    • Karl Paul Ludwig MullerKatsuya OkumuraTheodore G. Van Kessel
    • G01B11/06H01L21/304H01L21/66
    • G01B11/0683
    • The processing of a semiconductor body front side surface can be monitored in-situ, and thickness data for a body can be obtained ex-situ, by directing an infrared beam at the back side surface of the body. The light is reflected from front and back sides of a body portion to form primary and secondary reflections which are detected. An interference signal representative of interference fringes of the primary and secondary reflections is generated, and thickness data for the body or a body portion is calculated from the interference signal. In-situ monitoring of processes such as mechanical-chemical polishing, chemical vapor deposition, and plasma or reactive ion etching is achieved by providing a light passageway through a semiconductor body support such as a chuck or electrode, e.g., a cathode. In this manner, the process monitoring does not hinder, and is not hindered by, the processing steps and equipment.
    • 半导体本体侧表面的处理可以原位监测,通过将红外光束引导到身体的背面,可以非原位地获得身体的厚度数据。 光从身体部分的前侧和后侧反射以形成检测到的主反射和次级反射。 产生表示初级和次级反射的干涉条纹的干涉信号,并且根据干扰信号计算身体或身体部分的厚度数据。 通过提供通过诸如卡盘或电极例如阴极的半导体主体支撑件的光通道来实现诸如机械 - 化学抛光,化学气相沉积和等离子体或反应离子蚀刻的工艺的原位监测。 以这种方式,过程监控不妨碍加工步骤和设备的阻碍。