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11. 发明申请

US20090242907A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090242907A1
公开(公告)日：2009-10-01
申请号：US12408875
申请日：2009-03-23
申请人： Kunio HOSOYA , Saishi FUJIKAWA , Takahiro KASAHARA
发明人： Kunio HOSOYA , Saishi FUJIKAWA , Takahiro KASAHARA
IPC分类号： H01L33/00 , H01L21/18
CPC分类号： H01L21/84 , G02F2202/105 , H01L27/3262 , H01L27/3293 , H01L29/66772 , H01L51/52
摘要： To achieve enlargement and high definition of a display portion, a single crystal semiconductor film is used as a transistor in a pixel, and the following steps are included: bonding a plurality of single crystal semiconductor substrates to a base substrate; separating part of the plurality of single crystal semiconductor substrates to form a plurality of regions each comprising a single crystal semiconductor film over the base substrate; forming a plurality of transistors each comprising the single crystal semiconductor film as a channel formation region; and forming a plurality of pixel electrodes over the region provided with the single crystal semiconductor film and a region not provided with the single crystal semiconductor film. Some of the transistors electrically connecting to the pixel electrodes formed over the region not provided with the single crystal semiconductor film are formed in the region provided with the single crystal semiconductor film.
摘要翻译：为了实现显示部分的放大和高清晰度，在像素中使用单晶半导体膜作为晶体管，并且包括以下步骤：将多个单晶半导体衬底接合到基底衬底; 分离所述多个单晶半导体衬底的一部分以在所述基底衬底上形成各自包括单晶半导体膜的多个区域; 形成各自包含所述单晶半导体膜作为沟道形成区域的多个晶体管; 以及在设置有单晶半导体膜的区域和未设置单晶半导体膜的区域上形成多个像素电极。电连接到形成在未设置单晶半导体膜的区域上的像素电极的一些晶体管形成在设置有单晶半导体膜的区域中。

12. 发明申请

US20090104723A1 METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20090104723A1
公开(公告)日：2009-04-23
申请号：US12254589
申请日：2008-10-20
申请人： Kunio Hosoya , Saishi Fujikawa , Yoko Chiba
发明人： Kunio Hosoya , Saishi Fujikawa , Yoko Chiba
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , G02F2001/136236 , H01L27/1214
摘要： Etching is performed using mask layers formed by a multi-tone mask which is a light-exposure mask through which light is transmitted to have a plurality of intensity, in a method for manufacturing a display device including an inverted staggered thin film transistor with a channel-etched structure. Further, a gate wiring layer and a source wiring layer are formed over a substrate in the same step, and the source wiring layer is separated (disconnected) at an intersection of the gate wiring layer and the source wiring layer. The separated source wiring layers are connected to each other electrically through an opening (a contact hole) via a conductive layer formed over a gate insulating layer in the same step as formation of source and drain electrode layers.
摘要翻译：在用包括具有通道的反交错薄膜晶体管的显示装置的制造方法中，使用由多色调掩模形成的掩模层进行蚀刻，所述掩模层是作为透射光以具有多个强度的曝光掩模的多色掩模 - 结构。此外，在同一步骤中，在衬底上形成栅极布线层和源极布线层，并且在栅极布线层和源极布线层的交叉点处分离（断开）源极布线层。分离的源极布线层在与源极和漏极电极层的形成相同的步骤中通过形成在栅极绝缘层上的导电层通过开口（接触孔）彼此电连接。

13. 发明授权

US07510893B2 Method of manufacturing a display device using droplet emitting means 有权
标题翻译：使用液滴喷射装置制造显示装置的方法
公开(公告)号：US07510893B2
公开(公告)日：2009-03-31
申请号：US10771277
申请日：2004-02-04
申请人： Shunpei Yamazaki , Kunio Hosoya
发明人： Shunpei Yamazaki , Kunio Hosoya
IPC分类号： H01L21/00
CPC分类号： H01L51/0022 , H01L21/288 , H01L27/1292
摘要： In a wiring manufacturing process which uses conventional photolithography, most of resist and wiring material, or process gas which is necessary at the time of plasma processing, etc. is wasted. Also, since air discharging means such as a vacuum equipment is necessary, an entire apparatus grows in size, and therefore, it has been a problem that production cost increases with growing in size of a processing substrate. In this invention, applied is such means that droplets are used for resist and wiring material, and they are emitted directly to a necessary place on the substrate in a line form or a dot form, to draw a pattern. Also, applied is means which carries out a gas reaction process such as ashing and etching, under atmospheric pressure or the vicinity of atmospheric pressure.
摘要翻译：在使用常规光刻的布线制造工艺中，大部分抗蚀剂和布线材料或等离子体处理时所需的处理气体等被浪费。此外，由于需要诸如真空设备的空气排出装置，整个装置的尺寸增大，因此生产成本随着处理基板的尺寸的增加而增加。在本发明中，应用了这样一种方法，即将液滴用于抗蚀剂和布线材料，并且它们以直线形式或点状形式直接发射到基板上的必要位置以绘制图案。另外，作为在大气压或大气压附近进行灰化，蚀刻等气体反应处理的装置。

14. 发明申请

US20080060422A1 Examination element and examination container 有权
标题翻译：检查单元和检查容器
公开(公告)号：US20080060422A1
公开(公告)日：2008-03-13
申请号：US11898406
申请日：2007-09-12
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： G01N33/487
CPC分类号： G01N21/78 , A61B10/007 , G01N33/493 , G01N33/521
摘要： The present invention relates to an examination element that includes an antenna; a hygroscopic portion that absorbs a specimen; a reagent portion that, reacts with the specimen; and a chip including a semiconductor device capable of wireless communication and a photo sensor that detects a change in a color of the reagent portion. A change in the reagent portion is detected by the photo sensor, the detected data is stored in the semiconductor device capable of wireless communication, and the data is transmitted to an external database.
摘要翻译：本发明涉及一种包括天线的检查元件; 吸收样品的吸湿部分; 与试样反应的试剂部分; 以及包括能够进行无线通信的半导体器件的芯片和检测试剂部分的颜色变化的光电传感器。通过光传感器检测试剂部分的变化，将检测到的数据存储在能够进行无线通信的半导体装置中，并将数据发送到外部数据库。

15. 发明申请

US20070177092A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20070177092A1
公开(公告)日：2007-08-02
申请号：US11648582
申请日：2007-01-03
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： G02F1/1345
CPC分类号： G02F1/133305 , G02F1/133308 , G02F1/134309 , G02F1/134363 , G02F1/1345 , G02F1/13452 , G02F2001/13456
摘要： It is an object of the present invention to provide a display device where expansion of a frame portion over a substrate, which results from formation of a lead wiring over an active matrix substrate, is minimally suppressed to realize a narrow frame. According to one feature of a display device of the present invention, a chamfer portion is formed at least at an end portion of an active matrix substrate having a pixel portion of a pair of substrates disposed to be opposed to each other, and wirings (a source line, a gate line, a storage capacitor line, a leading out wiring, and the like) over the active matrix substrate are electrically connected by a common wiring formed in the chamfer portion.
摘要翻译：本发明的目的是提供一种显示装置，其中通过有源矩阵基板上的引线布线形成的基板上的框架部分的扩展被最小限度地抑制以实现窄的框架。根据本发明的显示装置的一个特征，在有源矩阵基板的至少一端形成倒角部分，该有源矩阵基板具有彼此相对设置的一对基板的像素部分和布线（a 源极线，栅极线，保持电容线，引出布线等）通过形成在倒角部中的公共布线电连接。

16. 发明申请

US20070126955A1 Display device and manufacturing method of display device 有权
标题翻译：显示装置及显示装置的制造方法
公开(公告)号：US20070126955A1
公开(公告)日：2007-06-07
申请号：US11599347
申请日：2006-11-15
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： G02F1/1335 , G02F1/136
CPC分类号： G02F1/133351 , G02F1/1362 , G02F2001/133342 , G02F2001/133354 , G02F2001/133557 , G02F2001/136231
摘要： It is an object of the present invention to realize thinning, low power consumption, and improvement of an yield at the time of manufacture of a display device capable of double-sided display which is used for a piece of portable informational terminal equipment such as a cellular phone. A liquid crystal display device, including a first substrate 1a and a second substrate 1b, has a transmission type active-matrix first liquid crystal display device 3001 and a reflective type active-matrix second liquid crystal display device 3002, where the first substrate has a TFT region of the first liquid crystal display device and an opposite region of the second liquid crystal display device, and the second substrate has an opposite region of the first liquid crystal display device and a TFT region of the second liquid crystal display device.
摘要翻译：本发明的一个目的是实现薄型化，低功耗化和提高在制造能够进行双面显示的显示装置时的成品率，这种便携式信息终端设备例如是手机。包括第一基板1a和第二基板1b的液晶显示装置具有透射型有源矩阵第一液晶显示装置3001和反射型有源矩阵第二液晶显示装置3002，其中第一基板具有第一液晶显示装置的TFT区域和第二液晶显示装置的相对区域，第二基板具有第一液晶显示装置的相对区域和第二液晶显示装置的TFT区域。

17. 发明申请

US20070002199A1 Liquid crystal display device and method for manufacturing the same 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20070002199A1
公开(公告)日：2007-01-04
申请号：US11450359
申请日：2006-06-12
申请人： Saishi Fujikawa , Kunio Hosoya
发明人： Saishi Fujikawa , Kunio Hosoya
IPC分类号： G02F1/136
CPC分类号： G02F1/136209 , G02F1/133345 , G02F2001/136222
摘要： In the present invention, it is an object to provide a liquid crystal display device in which a precise position alignment in attaching an active matrix substrate and a counter substrate is unnecessary and also does not affect an application of an electric field to a liquid crystal from an electrode, and a manufacturing method thereof. According to one feature of the present invention, the liquid crystal display device is formed using an active matrix substrate in which a driver circuit including a plurality of TFTs, a wiring, and the like, a pixel portion including a plurality of TFTs, a wiring, a pixel electrode, and the like are formed over a substrate provided with a light-shielding film and a coloring film, and the liquid crystal display device has a structure in which a liquid crystal is injected between the active matrix substrate and the counter substrate.
摘要翻译：在本发明中，本发明的目的是提供一种液晶显示装置，其中不需要在有源矩阵基板和对置基板上安装精确的位置对准，也不会影响对液晶的电场的施加电极及其制造方法。根据本发明的一个特征，液晶显示装置使用有源矩阵基板形成，其中包括多个TFT，布线等的驱动电路，包括多个TFT的像素部分，布线，像素电极等形成在设置有遮光膜和着色膜的基板上，并且液晶显示装置具有在有源矩阵基板和对置基板之间注入液晶的结构。

18. 发明授权

US08976308B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08976308B2
公开(公告)日：2015-03-10
申请号：US13539901
申请日：2012-07-02
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368
CPC分类号： H01L27/1255 , G02F1/1362 , G02F1/136227 , G02F1/1368 , G02F2201/50 , H01L27/124
摘要： It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.
摘要翻译：本发明的目的是获得接触缺陷减小的液晶显示装置，接触电阻的增加被抑制，开口率高。本发明涉及具有基板的液晶显示装置; 设置在基板上的薄膜晶体管，其包括栅极布线，栅极绝缘膜，岛状半导体膜，源极区域和漏极区域; 源极布线，其设置在所述基板上并且连接到所述源极区域; 漏极，其设置在所述衬底上并连接到所述漏极区; 设置在基板上的辅助电容器; 连接到所述漏电极的像素电极; 以及保护膜，其形成为覆盖保护膜具有开口的薄膜晶体管和源极布线，并且辅助电容器形成在形成开口的区域中。

19. 发明授权

US08922729B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08922729B2
公开(公告)日：2014-12-30
申请号：US13539901
申请日：2012-07-02
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368
摘要： It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.

20. 发明授权

US08395745B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08395745B2
公开(公告)日：2013-03-12
申请号：US13421933
申请日：2012-03-16
申请人： Saishi Fujikawa , Kunio Hosoya
发明人： Saishi Fujikawa , Kunio Hosoya
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394 , G02F1/133512 , G02F1/1362
摘要： When a columnar spacer is provided in a region overlapping with a TFT, there is a concern that pressure will be applied when attaching a pair of substrates to each other, which may result in the TFT being adversely affected and a crack forming. A dummy layer is formed of an inorganic material below a columnar spacer which is formed in a position overlapping with the TFT. The dummy layer is located in the position overlapping with the TFT, so that pressure applied to the TFT in a step of attaching the pair of substrates is distributed and relieved. The dummy layer is preferably formed of the same material as a pixel electrode so that it is formed without an increase in the number of processing steps.
摘要翻译：当在与TFT重叠的区域中设置柱状间隔物时，担心当将一对基板彼此连接时施加压力，这可能导致TFT受到不利影响和形成裂纹。虚设层由形成在与TFT重叠的位置的柱状间隔物下方的无机材料形成。虚设层位于与TFT重叠的位置，从而在安装一对基板的步骤中施加到TFT的压力被分配和释放。虚拟层优选由与像素电极相同的材料形成，使得其形成而不增加处理步骤的数量。

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