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11. 发明授权

US06849559B2 Method for removing photoresist and etch residues 有权
标题翻译：去除光刻胶和蚀刻残留物的方法
公开(公告)号：US06849559B2
公开(公告)日：2005-02-01
申请号：US10259381
申请日：2002-09-30
申请人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagiwara , Eiichi Nishimura , Kouichiro Inazawa
发明人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagiwara , Eiichi Nishimura , Kouichiro Inazawa
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/31 , H01L21/461
CPC分类号： H01L21/76814 , G03F7/427 , H01L21/02063 , H01L21/31138
摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译：提供了一种用于等离子体灰化以去除光刻胶残留物的蚀刻残留物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。灰化方法使用包含含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻以除去大量的光致抗蚀剂残余物和蚀刻残留物并从室表面除去有害的氟碳残余物。在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。两步法减少了常规一步灰化过程中常见的记忆效应。端点检测方法可用于监测灰化过程。

12. 发明授权

US06753263B1 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US06753263B1
公开(公告)日：2004-06-22
申请号：US09700785
申请日：2001-02-05
申请人： Youbun Ito , Masahiro Yamada , Kouichiro Inazawa
发明人： Youbun Ito , Masahiro Yamada , Kouichiro Inazawa
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J2237/3347 , H01L21/76802 , H01L21/76829
摘要： A lower electrode 106 with the temperature at its mounting surface set at 40° C. is provided inside a processing chamber 104 of an etching apparatus 100. After a wafer W is placed on the lower electrode 106, a processing gas with its gas composition and gas flow rate expressed as C4F8: CH2F2: Ar=7:4:500 (sccm) is induced into the processing chamber 104 while sustaining the pressure of the atmosphere inside the processing chamber 104 at 50 (mTorr). High-frequency power at 1500 (W) with the frequency at 13.56 (MHz) is applied to the lower electrode 106 to generate plasma. With the plasma thus generated, a carbon film is formed at shoulder 207 of an SiNx film layer 206 exposed inside a contact hole 210 and, at the same time, accumulation of carbon at the bottom of the contact hole 210 is prevented, to form a contact hole 210 achieving a high aspect ratio while preventing damage to the SiNx film layer.
摘要翻译：在蚀刻装置100的处理室104的内部设置有其安装面设定为40℃的温度的下部电极106.在将晶片W配置在下部电极106上之后，具有气体成分的处理气体和气体流速表示为C4F8：CH2F2：Ar = 7：4：500（sccm）被引入处理室104，同时在50（mTorr）内保持处理室104内的气氛的压力。将在13.56（MHz）频率的1500（W）的高频功率施加到下电极106以产生等离子体。利用这样产生的等离子体，在暴露在接触孔210内的SiNx膜层206的肩部207处形成碳膜，同时防止了在接触孔210的底部积聚碳，形成接触孔210实现高纵横比，同时防止对SiNx膜层的损伤。

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