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    • 11. 发明授权
    • Method and apparatus for the generation of EUV radiation from a gas discharge plasma
    • 用于从气体放电等离子体产生EUV辐射的方法和装置
    • US08426834B2
    • 2013-04-23
    • US13239564
    • 2011-09-22
    • Juergen Kleinschmidt
    • Juergen Kleinschmidt
    • G01J3/10
    • H05G2/008H05G2/003
    • The invention relates to a method and an apparatus for generating EUV radiation from a gas discharge plasma. The object of the invention, to generate EUV radiation from a gas discharge plasma by with is optimized conversion efficiency of the EUV emission while locally limiting the electric discharge channel, is met in that a channel-generating beam of pulsed high-energy radiation is supplied in at least two partial beams which are focused in a pulse-synchronized manner into a superposition region along a spacing axis between the electrodes, and an electrically conductive discharge channel is generated along the superposition region due to an ionization at least of a buffer gas present in the discharge space, wherein the pulsed high-energy radiation of the channel-generating beam is triggered in such a way that the discharge channel is generated before a discharge current pulse has reached its maximum value.
    • 本发明涉及一种用于从气体放电等离子体产生EUV辐射的方法和装置。 本发明的目的是为了从气体放电等离子体产生EUV辐射,在局部限制放电通道的同时,优化了EUV发射的转换效率,因为提供了脉冲高能辐射的通道产生束 在沿着电极之间的间隔轴以脉冲同步方式聚焦成叠加区域的至少两个部分光束中,并且由于至少存在缓冲气体的电离而沿着叠加区域产生导电放电通道 在放电空间中,其中以使得在放电电流脉冲已经达到其最大值之前产生放电通道的方式触发通道产生束的脉冲高能辐射。
    • 13. 发明授权
    • Arrangement for the generation of short-wavelength radiation based on a gas discharge plasma and method for the production of coolant-carrying electrode housings
    • 基于气体放电等离子体生成短波长辐射的装置以及用于生产载有冷却剂的电极壳体的方法
    • US07541604B2
    • 2009-06-02
    • US11560118
    • 2006-11-15
    • Sven GoetzeHarald EbelJuergen KleinschmidtImtiaz Ahmad
    • Sven GoetzeHarald EbelJuergen KleinschmidtImtiaz Ahmad
    • H01J17/26H01J35/00
    • H01J17/28H01J7/26H05G2/003
    • The invention is directed to an arrangement for the generation of short-wavelength radiation based on a hot plasma generated by gas discharge and to a method for the production of coolant-carrying electrode housings. It is the object of the invention to find a novel possibility for gas discharge based short-wavelength radiation sources with high average radiation output in quasi-continuous discharge operation by which efficient cooling principles can be implemented using inexpensive and simple means in order to prevent a temporary melting of the electrode surfaces and, therefore, to ensure a long lifetime of the electrodes. According to the invention, this object is met in that special cooling channels for circulating coolant are integrated in electrode collars of the electrode housings. The cooling channels are advanced radially up to within a few millimeters of the highly thermally stressed surface regions and are connected by necked-down channel portions which are arranged coaxial to the axis of symmetry and which are provided with channel structures for increasing the inner surface and for increasing the flow rate of the coolant.
    • 本发明涉及一种用于产生基于由气体放电产生的热等离子体的短波长辐射的装置以及用于制造承载冷却剂的电极壳体的方法。 本发明的目的是在准连续放电操作中找到具有高平均辐射输出的基于气体放电的短波长辐射源的新颖可能性,通过该方法可以使用廉价和简单的方法来实现有效的冷却原理,以便防止 暂时熔化电极表面,因此确保电极寿命长。 根据本发明,由于用于循环冷却剂的特殊冷却通道集成在电极壳体的电极环中,所以满足了该目的。 冷却通道从高度受热应力的表面区域径向推进到几毫米以内,并且通过与对称轴线同轴设置的颈缩通道部分连接,并且设置有用于增加内表面的通道结构, 以增加冷却剂的流量。
    • 14. 发明申请
    • ARRANGEMENT AND METHOD FOR THE GENERATION OF EUV RADIATION OF HIGH AVERAGE OUTPUT
    • 用于高频平均输出的EUV辐射的产生的布置和方法
    • US20070181834A1
    • 2007-08-09
    • US11622241
    • 2007-01-11
    • JUERGEN KLEINSCHMIDT
    • JUERGEN KLEINSCHMIDT
    • G01J3/10
    • G01J1/08B82Y10/00G01J1/04G01J1/0414G03F7/70033G03F7/70041G03F7/7005G03F7/70166G03F7/70208
    • The invention is directed to an arrangement and a method for the generation of EUV radiation of high average output, preferably for the wavelength region of 13.5 nm for use in semiconductor lithography. It is the object of the invention to find a novel possibility for generating EUV radiation of high average output which permits a time-multiplexing of the radiation of a plurality of source modules in a simple manner without overloading the source modules and without requiring extremely high rotational speeds of optical-mechanical components. This object is met, according to the invention, in that a plurality of identically constructed source modules which are arranged so as to be distributed around a common optical axis are directed to a rotatably mounted reflector arrangement which successively couples in the beam bundles of the source modules along the optical axis. The reflector arrangement has a drive unit by which a reflecting optical element is adjustable so as to be stopped temporarily in angular positions that are defined for the source modules and is oriented to the next source module in intervals between two exposure fields of a wafer by means of control signals emitted by an exposure system.
    • 本发明涉及一种用于产生高平均输出的EUV辐射的装置和方法,优选用于半导体光刻中用于13.5nm的波长区域。 本发明的目的是找到一种产生高平均输出的EUV辐射的新颖可能性,其允许以简单的方式对多个源模块的辐射进行时间复用,而不会使源模块过载,而不需要极高的旋转 光学机械部件的速度。 根据本发明,满足本发明的目的在于,将多个相同构造的源模块布置成围绕公共光轴分布,被引导到可旋转地安装的反射器装置,该反射器装置在源的束束中连续耦合 模块沿光轴。 反射器装置具有驱动单元,反射光学元件可以通过该驱动单元被调节,以便临时停止在为源模块定义的角位置中,并且以晶片的两个曝光场之间的间隔定向到下一个源模块 由曝光系统发射的控制信号。
    • 15. 发明申请
    • ARRANGEMENT FOR THE GENERATION OF INTENSIVE SHORT-WAVELENGTH RADIATION BASED ON A GAS DISCHARGE PLASMA
    • 基于气体放电等离子体产生强烈的短波辐射的布置
    • US20060273732A1
    • 2006-12-07
    • US11421144
    • 2006-05-31
    • Vladimir KorobochkoAlexander KellerJuergen Kleinschmidt
    • Vladimir KorobochkoAlexander KellerJuergen Kleinschmidt
    • H01J7/24H05B31/26
    • H05G2/003H05G2/005
    • The invention is directed to an arrangement for the generation of intensive short-wavelength radiation based on a gas discharge plasma. It is the object of the invention to find a novel possibility for generating intensive short-wavelength radiation, particularly EUV radiation, based on a gas discharge plasma which achieves a long life of the electrode system along with a high total efficiency of the radiation source without substantially increasing the dimensions of the discharge unit. This object is met, according to the invention, in that exclusively suitably shaped vacuum insulation areas which have the shape of an annular gap and which are formed depending on the product of gas pressure (p) and interelectrode distance (d) between the cathode and anode are provided for insulating the cathode and anode from one another in a cylindrically symmetric electrode arrangement for reliable suppression of electron arcing.
    • 本发明涉及一种用于产生基于气体放电等离子体的强烈的短波长辐射的装置。 本发明的目的是发现基于气体放电等离子体产生强烈的短波长辐射,特别是EUV辐射的新型可能性,其能够实现电极系统的长寿命以及辐射源的高总效率而没有 大大增加了放电单元的尺寸。 根据本发明,符合本发明的目的在于,具有环形间隙形状的完全合适形状的真空绝缘区域,其取决于气体压力(p)和阴极和(d)之间的电极间距离(d)的乘积而形成 阳极被提供用于将阴极和阳极彼此隔离成圆柱形对称电极布置,以可靠地抑制电子弧。
    • 16. 发明申请
    • METHOD AND ARRANGEMENT FOR THE SUPPRESSION OF DEBRIS IN THE GENERATION OF SHORT-WAVELENGTH RADIATION BASED ON A PLASMA
    • 基于等离子体的短波辐射生成抑制方法与装置
    • US20060243927A1
    • 2006-11-02
    • US11380487
    • 2006-04-27
    • Duc TranJesko BrudermannBjoern MaderRene De BruijnJuergen Kleinschmidt
    • Duc TranJesko BrudermannBjoern MaderRene De BruijnJuergen Kleinschmidt
    • G01J3/10H05G2/00
    • G03F7/70916G03F7/70033
    • The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation. The filter structure generates a flow resistance in direction of the plasma and in direction of propagation of the radiation so that an increased gas pressure of buffer gas remains limited to a defined volume layer in the debris filter relative to the pressure in the vacuum chamber, and the buffer gas exiting from the filter structure of the debris filter is sucked out of the vacuum chamber by vacuum pumps.
    • 本发明涉及一种用于抑制基于等离子体的短波长辐射源中的碎屑的方法和装置,特别是用于半导体光刻的EUV源。 本发明的目的是找到一种抑制来自等离子体的颗粒流(碎屑)的新型可能性,该等离子体使碎片远离主要位于下游的光学部件,而不会从等离子体发射的期望辐射的过度衰减。 根据本发明,这个目的在于,缓冲气体被注入碎片过滤器的过滤器结构内,侧向设置用于通过辐射的开口。 过滤器结构在等离子体的方向和辐射的传播方向上产生流动阻力,使得缓冲气体的增加的气体压力相对于真空室中的压力保持限于碎屑过滤器中的限定体积层,以及 从碎屑过滤器的过滤器结构排出的缓冲气体由真空泵从真空室中抽出。
    • 17. 发明授权
    • Arrangement for the generation of EUV radiation with high repetition rates
    • 以高重复率产生EUV辐射的安排
    • US06946669B2
    • 2005-09-20
    • US10772910
    • 2004-02-05
    • Juergen Kleinschmidt
    • Juergen Kleinschmidt
    • H05G2/00G21J1/00G21K5/00
    • H05G2/003
    • The arrangement for generating EUV radiation based on electrically triggered gas discharges with high repetition rates and high average outputs. The object of the invention, to find a novel possibility for generating EUV radiation based on a gas discharge pumped plasma which permits the generation of EUV pulse sequences with a pulse repetition frequency of greater than 5 kHz at pulse energies of at least 10 mJ/sr without having to tolerate increased electrode wear, is met according to the invention in that a plurality of source modules of identical construction, each of which generates a radiation-emitting plasma and has bundled EUV radiation, are arranged in a vacuum chamber so as to be uniformly distributed around an optical axis of the source in its entirety in order to provide successive radiation pulses at a point on the optical axis, so that a reflector device which is supported so as to be rotatable around the optical axis deflects the radiation delivered by the source modules in the direction of the optical axis successively with respect to time. A synchronization device triggers the source modules in a circularly successive manner depending upon the actual rotational position of the reflector device and adjusts a preselected pulse repetition frequency by means of the rotating speed.
    • 基于电触发气体放电产生具有高重复率和高平均输出的EUV辐射的装置。 本发明的目的是为了发现基于气体放电泵浦等离子体产生EUV辐射的新颖可能性,其允许以至少10mJ / s的脉冲能量产生具有大于5kHz的脉冲重复频率的EUV脉冲序列 根据本发明,不需要耐受增加的电极磨损,因为具有相同结构的多个源模块,每个源模块都产生辐射发射等离子体并且具有捆绑的EUV辐射,被布置在真空室中,以便是 整体上围绕光源的光轴均匀分布,以便在光轴上的一个点处提供连续的辐射脉冲,使得被支撑为可围绕光轴旋转的反射器装置偏转由光轴传送的辐射 源模块相对于时间连续地在光轴的方向上。 同步装置根据反射器装置的实际旋转位置以循环连续的方式触发源模块,并通过转速调节预选的脉冲重复频率。
    • 18. 发明授权
    • Method for energy stabilization of gas discharged pumped in selected impulse following driven beam sources
    • 在驱动光束源之后以选定的脉冲泵送的气体的能量稳定化方法
    • US06914920B2
    • 2005-07-05
    • US10360372
    • 2003-02-07
    • Juergen Kleinschmidt
    • Juergen Kleinschmidt
    • H01S3/097H01S3/225H01S3/10G05F1/00H01S3/13H01S3/22H01S3/223
    • H01S3/09705H01S3/225
    • The invention is directed to a method for the energy stabilization of a gas discharge-pumped radiation source that is operated in defined pulse sequences, particularly for suppression of overshooting and undershooting of excimer lasers and EUV radiation sources in burst operation. It is the object of the invention to find a novel possibility for the stabilization of the energy emission of a gas discharge-pumped radiation source that is operated in defined pulse sequences (bursts) which makes it possible to take into account a temporary behavior of the radiation source at the beginning of every burst without repeated recalibration of the energy-voltage curve. In a method with proportional regulation of the charging voltage as a function of the measured pulse energy, the object stated above is met according to the invention in that the pulse energy En(p) to be adjusted for a current pulse in the current burst is calculated from the pulse energy of the preceding pulse in the current burst and an identical pulse En(p-1) of a preceding precursor burst, wherein the precursor burst is an unregulated model burst and the high voltage which is to be adjusted currently for the current pulse is calculated from the current pulse energy En(p) by dividing by the rise dE/dU of the function of the pulse energy depending on the charging voltage in the linear operating range of the radiation source.
    • 本发明涉及一种用于以限定的脉冲序列操作的气体放电泵浦辐射源的能量稳定的方法,特别是用于在突发操作中抑制准分子激光器和EUV辐射源的过冲和下冲。 本发明的目的是找到一种新颖的可能性,用于稳定以限定的脉冲序列(脉冲串)操作的气体放电泵浦辐射源的能量发射,这使得有可能考虑到 辐射源在每次突发开始时不会重复重新校准能量 - 电压曲线。 在根据本发明的充电电压成比例地调节作为测量脉冲能量的函数的方法中,符合上述目的,因为脉冲能量E(p)< 根据当前脉冲串中的先前脉冲的脉冲能量和相同的脉冲E(n-1)来计算当前脉冲串中的电流脉冲的“/ SUP” / SUP>,其中前兆脉冲串是未调节的模型脉冲串,并且根据当前脉冲能量E SUP计算当前针对当前脉冲要调整的高电压 >(p)除以脉冲能量的函数的上升dE / dU,这取决于在辐射源的线性工作范围内的充电电压。
    • 19. 发明授权
    • Temperature compensation method for wavemeters
    • 波长计温度补偿方法
    • US06667804B1
    • 2003-12-23
    • US09686483
    • 2000-10-10
    • Juergen Kleinschmidt
    • Juergen Kleinschmidt
    • G01J328
    • G01J9/0246
    • A wavemeter for monitoring a wavelength of emission from a tunable laser includes a spectrometer disposed within a housing having a controlled pressure, and a temperature sensor and/or a pressure sensor for sensing the temperature and/or pressure, respectively, within the housing. The temperature and/or pressure are controlled such that they have relative values, and materials are selected, each for substantially minimizing temperature sensitivity of the spectrometer, such as for providing a temperature sensitivity of the spectrometer within ±0.1 pm/°K.
    • 用于监测来自可调谐激光器的发射波长的波长计包括设置在具有受控压力的壳体内的光谱仪,以及分别用于感测壳体内的温度和/或压力的温度传感器和/或压力传感器。 控制温度和/或压力使得它们具有相对值,并且选择材料,每个用于基本上最小化光谱仪的温度敏感性,例如用于将光谱仪的温度敏感度提供在±0.1pm /°K内。
    • 20. 发明授权
    • Narrow band excimer or molecular fluorine laser having an output coupling interferometer
    • 具有输出耦合干涉仪的窄带准分子或分子氟激光
    • US06553050B1
    • 2003-04-22
    • US10081883
    • 2002-02-21
    • Juergen KleinschmidtPeter Lokai
    • Juergen KleinschmidtPeter Lokai
    • H01S322
    • H01S3/08068H01S3/0805H01S3/105H01S3/225
    • An excimer or molecular fluorine laser includes a discharge chamber filled with a gas mixture, multiple electrodes within the discharge chamber connected to a power supply circuit for energizing the gas mixture, and a resonator including the discharge chamber and a pair of resonator reflectors for generating an output laser beam. The resonator includes an interferometric device, which may be a resonator reflector such as an output coupling interferometer or HR reflector, or a transmissive intracavity component, including a pair of opposing reflecting surfaces tuned to produce a response maximum at a selected wavelength for narrowing a linewidth of the output laser beam. One of the pair of opposing reflecting surfaces is preferably configured such that the opposing reflecting surfaces of the interferometer have a varying optical distance therebetween over an incident beam cross-section which serves to suppress at least one side band or outer portions of the response maximum to reduce spectral purity. Preferably, this surface is non-planar, and may include a step, a recess or a raised or recessed curved portion of a quarter wavelength in height or depth, respectively, and may be cylindrical, Gaussian or spherical, and the curvature may extend over the entire reflecting surface or diameter of the incident beam. The curved surface may be part of a component that couples with a base optical block at a surface opposing the other reflecting surface, such as by a slot defined in the optical block or using an adhesive.
    • 准分子或分子氟激光器包括填充有气体混合物的放电室,放电室内的多个电极连接到用于激励气体混合物的电源电路,以及包括放电室的谐振器和一对谐振器反射器,用于产生 输出激光束。 谐振器包括干涉仪,其可以是谐振器反射器,例如输出耦合干涉仪或HR反射器,或透射腔内分量,包括一对相对的反射表面,其被调谐以在选定波长处产生响应最大值以使线宽变窄 的输出激光束。 一对相对的反射表面中的一个优选地被配置为使得干涉仪的相对的反射表面在入射光束横截面之间具有变化的光学距离,其用于抑制响应最大值的至少一个边带或外部部分 降低光谱纯度。 优选地,该表面是非平面的,并且可以分别包括高度或深度为四分之一波长的台阶,凹陷或凸起或凹陷的弯曲部分,并且可以是圆柱形,高斯或球形,并且曲率可以延伸超过 入射光束的整个反射面或直径。 弯曲表面可以是组件的一部分,其在与另一个反射表面相对的表面处与基底光学块耦合,例如通过在光学块中限定的狭槽或使用粘合剂。