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11. 发明授权

US07629481B2 Ansa-metallocene compound, process of preparing the same, and process of preparing polyolefin using the same 有权
标题翻译：安沙茂金属化合物，其制备方法以及使用其制备聚烯烃的方法
公开(公告)号：US07629481B2
公开(公告)日：2009-12-08
申请号：US11234504
申请日：2005-09-23
申请人： Choong Hoon Lee , Jong Joo Ha , Seung Whan Jung , Eunjung Lee , Beomdoo Seo , Young Whan Park , Hyosun Lee , Sung Don Hong , Young Chul Won , Bun Yeoul Lee
发明人： Choong Hoon Lee , Jong Joo Ha , Seung Whan Jung , Eunjung Lee , Beomdoo Seo , Young Whan Park , Hyosun Lee , Sung Don Hong , Young Chul Won , Bun Yeoul Lee
IPC分类号： C07F17/00 , C08F4/76 , C08F4/64
CPC分类号： C07F17/00 , Y10S526/941 , Y10S526/943
摘要： Provided are a bridged metallocene compound particularly suitable for copolymerization of ethylene and alpha-olefin or cyclic olefin, a process of preparing the metallocene compound, and a process of preparing polyolefin using the metallocene compound. The bridged metallocene compound has low steric hindrance and good (co)polymerization activity, and thus, exhibits good activity in copolymerization of ethylene and alpha-olefin such as 1-hexene or 1-octene. Furthermore, the process of preparing the bridged metallocene compound is simplified, and thus, suitable for mass production.
摘要翻译：提供特别适用于乙烯和α-烯烃或环烯烃的共聚的桥连茂金属化合物，制备茂金属化合物的方法，以及使用茂金属化合物制备聚烯烃的方法。桥连金属茂化合物具有低的空间位阻和良好的（共）聚合活性，因此在乙烯和α-烯烃如1-己烯或1-辛烯的共聚合中表现出良好的活性。此外，制备桥连金属茂化合物的方法简单，因此适合批量生产。

12. 发明授权

US07591996B2 Ultrasound target vessel occlusion using microbubbles 有权
标题翻译：使用微泡的超声靶标血管闭塞
公开(公告)号：US07591996B2
公开(公告)日：2009-09-22
申请号：US11206639
申请日：2005-08-17
申请人： Joo Ha Hwang , Andrew Brayman
发明人： Joo Ha Hwang , Andrew Brayman
IPC分类号： A61B17/26 , A61B8/00 , A61B8/12 , A61K38/00
CPC分类号： A61N7/02 , A61B8/0833 , A61B2017/22008 , A61K38/363 , A61M2025/109
摘要： Selective occlusion of a blood vessel is achieved by selectively damaging endothelial cells at a target location in the blood vessel, resulting in the formation of a fibrin clot proximate to the damaged endothelial cells. Additional fibrinogen can then be introduced into the blood vessel if occlusion is not achieved, as the fibrinogen is converted to fibrin by enzymes released by the exposed thrombogenic tissue and activated platelets. Endothelial cells are selectively damaged using thermal effects induced by ultrasound, by mechanical effects induced by ultrasound, or by mechanical effects produced by a tool introduced into the blood vessel (such as a catheter-based tool). A particularly preferred technique for selectively damaging endothelial cells involves introducing an ultrasound activatable agent into the blood vessel, and causing cavitation in that agent using pulses of high-intensity focused ultrasound having a duration insufficient to induce thermal damage in adjacent perivascular tissue.
摘要翻译：血管的选择性闭塞通过选择性地损伤血管中目标位置处的内皮细胞来实现，导致在损伤的内皮细胞附近形成纤维蛋白凝块。然后如果没有实现闭塞，则可以将额外的纤维蛋白原引入血管，因为通过暴露的血栓形成组织和活化的血小板释放的酶将纤维蛋白原转化为纤维蛋白。使用由超声诱导的热效应，由超声诱导的机械效应或通过引入血管的工具（例如基于导管的工具）产生的机械效应来选择性地损伤内皮细胞。用于选择性损伤内皮细胞的特别优选的技术包括将超声可激活剂引入血管中，并且使用具有不足以在相邻血管周围组织中引起热损伤的持续时间的高强度聚焦超声的脉冲引起该药剂中的空化。

13. 发明授权

US07573757B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07573757B2
公开(公告)日：2009-08-11
申请号：US12073294
申请日：2008-03-04
申请人： Sung-Joo Ha , Ho-Youb Cho
发明人： Sung-Joo Ha , Ho-Youb Cho
IPC分类号： G11C11/063
CPC分类号： G11C7/1078 , G11C7/1048 , G11C7/1087 , G11C7/1093 , G11C7/1096
摘要： Disclosed herein is a semiconductor memory device for reducing a current consumption used for operating a write command or a read command. The semiconductor memory device includes a global data latch unit for latching a global data loaded on a global data line in response to a first write enable signal to thereby generate a global latch data; a local data write driving unit for receiving the global latch data to output a local data to a local data line in response to a second write enable signal; and a write driver control unit for generating the first write enable signal and the second write enable signal to inactivate the first write enable signal when a write operation is not performed.
摘要翻译：这里公开了一种用于减少用于操作写入命令或读取命令的电流消耗的半导体存储器件。半导体存储器件包括全局数据锁存单元，用于响应于第一写使能信号来锁存加载在全局数据线上的全局数据，从而生成全局锁存数据; 本地数据写驱动单元，用于接收全局锁存数据，以响应于第二写使能信号将本地数据输出到本地数据线; 以及写入驱动器控制单元，用于在不执行写入操作时产生第一写入使能信号和第二写入使能信号以使第一写入使能信号失活。

14. 发明授权

US07573755B2 Data amplifying circuit for semiconductor integrated circuit 失效
标题翻译：半导体集成电路数据放大电路
公开(公告)号：US07573755B2
公开(公告)日：2009-08-11
申请号：US11822813
申请日：2007-07-10
申请人： Sung-Joo Ha
发明人： Sung-Joo Ha
IPC分类号： G11C7/08
CPC分类号： H03K3/356113 , G11C29/02 , G11C29/028
摘要： A data amplifying circuit for a semiconductor integrated circuit including a controller configured to generate a control signal for adjusting an amplification step in response to a test signal, and a data amplifier configured to amplify an input signal one time or two or more times in response to the control signal and to output an output signal.
摘要翻译：一种用于半导体集成电路的数据放大电路，包括：控制器，被配置为响应于测试信号产生用于调整放大步长的控制信号;以及数据放大器，被配置为响应于一个或多个时间来放大输入信号一次或两次或更多次控制信号并输出输出信号。

15. 发明授权

US07489585B2 Global signal driver for individually adjusting driving strength of each memory bank 失效
标题翻译：用于单独调整每个存储体的驱动强度的全局信号驱动器
公开(公告)号：US07489585B2
公开(公告)日：2009-02-10
申请号：US11478117
申请日：2006-06-30
申请人： Sung-Joo Ha , Yong-Mi Kim
发明人： Sung-Joo Ha , Yong-Mi Kim
IPC分类号： G11C8/00
CPC分类号： G11C8/10 , G11C7/1048 , G11C11/4096 , G11C2207/2254
摘要： A global signal driving device includes a driving control unit for generating a plurality of driving control signals differently configured according to transmission distances of a global signal to a plurality of banks by decoding a bank address; and a driving unit for adjusting a driving strength for driving the global signal based on the plurality of driving control signals in order to drive the global signal to the plurality of banks.
摘要翻译：全局信号驱动装置包括：驱动控制单元，用于通过解码存储体地址来产生根据全局信号到多个存储体的传输距离不同地配置的多个驱动控制信号; 以及驱动单元，用于基于所述多个驱动控制信号来调整用于驱动全局信号的驱动强度，以便将全局信号驱动到多个存储体。

16. 发明授权

US07359256B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07359256B2
公开(公告)日：2008-04-15
申请号：US11312610
申请日：2005-12-21
申请人： Sung-Joo Ha , Ho-Youb Cho
发明人： Sung-Joo Ha , Ho-Youb Cho
IPC分类号： G11C7/00
CPC分类号： G11C7/1078 , G11C7/1048 , G11C7/1087 , G11C7/1093 , G11C7/1096
摘要： Disclosed herein is a semiconductor memory device for reducing a current consumption used for operating a write command or a read command. The semiconductor memory device includes a global data latch unit for latching a global data loaded on a global data line in response to a first write enable signal to thereby generate a global latch data; a local data write driving unit for receiving the global latch data to output a local data to a local data line in response to a second write enable signal; and a write driver control unit for generating the first write enable signal and the second write enable signal to inactivate the first write enable signal when a write operation is not performed.
摘要翻译：这里公开了一种用于减少用于操作写入命令或读取命令的电流消耗的半导体存储器件。半导体存储器件包括全局数据锁存单元，用于响应于第一写使能信号来锁存加载在全局数据线上的全局数据，从而生成全局锁存数据; 本地数据写驱动单元，用于接收全局锁存数据，以响应于第二写使能信号将本地数据输出到本地数据线; 以及写入驱动器控制单元，用于在不执行写入操作时产生第一写入使能信号和第二写入使能信号以使第一写入使能信号失活。

17. 发明授权

US07161860B2 Local input/output line precharge circuit of semiconductor memory device 失效
标题翻译：半导体存储器件本地输入/输出线预充电电路
公开(公告)号：US07161860B2
公开(公告)日：2007-01-09
申请号：US11115373
申请日：2005-04-27
申请人： Sung Joo Ha , Ho Youb Cho
发明人： Sung Joo Ha , Ho Youb Cho
IPC分类号： G11C7/00
CPC分类号： G11C7/12
摘要： A local input/output line precharge circuit of a semiconductor memory device comprises a precharge control unit, an equalization unit and a data output unit. The precharge control unit outputs a precharge control signal to precharge a pair of local input/output lines in response to a continuous write signal activated when a write operation continues. The equalization unit precharges and equalizing the pair of local input/output lines in response to the precharge control signal. The data output unit outputs data signals of a pair of global input/output lines to the pair of local input/output lines in response to output signal from the equalization unit. In the circuit, a local input/output line precharge operation is not performed at a continuous write mode, thereby reducing current consumption.
摘要翻译：半导体存储器件的本地输入/输出线预充电电路包括预充电控制单元，均衡单元和数据输出单元。预充电控制单元输出预充电控制信号，以便在写入操作继续时响应于激活的连续写入信号对一对本地输入/输出线进行预充电。均衡单元响应于预充电控制信号对一对本地输入/输出线进行预充电和均衡。数据输出单元响应于来自均衡单元的输出信号，将一对全局输入/输出线的数据信号输出到一对本地输入/输出线。在该电路中，在连续写入模式下不执行局部输入/输出线预充电操作，从而减少电流消耗。

18. 发明申请

US20050162945A1 Semiconductor memory device having repair circuit 失效
标题翻译：具有修复电路的半导体存储器件
公开(公告)号：US20050162945A1
公开(公告)日：2005-07-28
申请号：US11015419
申请日：2004-12-20
申请人： Sang-Hee Kang , Sung-Joo Ha , Ho-Youb Cho
发明人： Sang-Hee Kang , Sung-Joo Ha , Ho-Youb Cho
IPC分类号： G11C7/00 , G11C29/00
CPC分类号： G11C29/808
摘要： A semiconductor memory device, including: a plurality of banks each of which includes a plurality of memory cells, a plurality of redundancy memory cells for replacing a defective memory cell and a repair circuit, having a plurality of fuse sets, for substituting an address to thereby access the redundancy memory cell instead of the defective memory cell; and a common repair circuit, having a plurality of fuse sets, for substituting the address in order to replace the defective memory cell with the redundancy memory cell included in any of the plurality of banks.
摘要翻译：一种半导体存储器件，包括：多个存储体，每个存储体包括多个存储单元，用于替换有缺陷存储单元的多个冗余存储单元和具有多个熔丝组的修复电路，用于将地址替换为从而访问冗余存储单元而不是有缺陷的存储单元; 以及具有多个熔丝组的通用修复电路，用于代替所述地址以便用所述多个存储体中的任一个中包含的所述冗余存储单元替换所述有缺陷的存储单元。

19. 发明授权

US08740428B2 Indirect illumination device for vehicle 有权
标题翻译：车辆间接照明装置
公开(公告)号：US08740428B2
公开(公告)日：2014-06-03
申请号：US13534920
申请日：2012-06-27
申请人： Hong Sik Chang , Jung Hoon Woo , Jung Hwan Yun , Joo Ha Kim , Young Jin You
发明人： Hong Sik Chang , Jung Hoon Woo , Jung Hwan Yun , Joo Ha Kim , Young Jin You
IPC分类号： F21V1/00 , F21V11/00 , F21V9/00
CPC分类号： B60Q3/78 , B60Q3/54 , B60Q2500/10 , F21S43/235 , F21S43/239 , F21S43/245
摘要： An indirect illumination device for a vehicle may include an internal panel forming a diffusion portion in a surface thereof, a light guide plate faced with the diffusion portion, a light source provided in a side portion of the light guide plate to which the light guide plate may be not faced with the diffusion portion, to irradiate light to an inside of the light guide plate, and an external panel provided with guide ribs protruding from a surface of the external panel, wherein the guide ribs support a lateral side of the internal panel and the light guide plate.
摘要翻译：一种用于车辆的间接照明装置可以包括在其表面上形成扩散部分的内部面板，面向扩散部分的导光板，设置在导光板的侧部中的光源，导光板可能不面对扩散部分，将光照射到导光板的内部，以及设置有从外部面板的表面突出的引导肋的外部面板，其中，引导肋支撑内部面板的侧面和导光板。

20. 发明授权

US08482995B2 Circuit for transmitting and receiving data and control method thereof 有权
标题翻译：用于发送和接收数据的电路及其控制方法
公开(公告)号：US08482995B2
公开(公告)日：2013-07-09
申请号：US13269331
申请日：2011-10-07
申请人： Sun-Hye Shin , Sung-Joo Ha
发明人： Sun-Hye Shin , Sung-Joo Ha
IPC分类号： G11C7/00
CPC分类号： G11C7/1078 , G11C7/1051 , G11C7/106 , G11C7/1087
摘要： A data receiving circuit includes a delay unit for outputting a delayed control signal by delaying a control signal based on a CAS latency, an output driver for time-dividing parallel data based on the control signal and the delayed control signal to generate divided parallel data, and for writing and transmitting the divided parallel data, and a latch for receiving the parallel data from the output driver and sorting, by combining or dividing, the received parallel data in response to the control signal and the delayed control signal.
摘要翻译：数据接收电路包括：延迟单元，用于通过基于CAS等待时间延迟控制信号来输出延迟的控制信号;基于控制信号和延迟的控制信号分时并行数据的输出驱动器，以产生分割的并行数据; 并且用于写入和发送分割的并行数据，以及锁存器，用于从输出驱动器接收并行数据，并且通过响应于控制信号和延迟的控制信号组合或分割所接收的并行数据进行排序。

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