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    • 19. 发明授权
    • Flash memory device and method of programming flash memory device
    • 闪存设备和闪存设备编程方法
    • US07746703B2
    • 2010-06-29
    • US12126080
    • 2008-05-23
    • Kyong-Ae KimJin-Wook LeeYun-Ho Choi
    • Kyong-Ae KimJin-Wook LeeYun-Ho Choi
    • G11C11/34G11C16/06
    • G11C16/349
    • A flash memory device and a method of programming the same include a memory cell array, a pass/fail check circuit and a control logic circuit. The memory cell array includes multiple memory cells arranged in rows and columns. The pass/fail check circuit verifies whether data bits selected by a column address during a column scan operation have program data values. The control logic circuit detects fail data bits from the selected data bits and stores the column address in response to the verification result of the pass/fail check circuit. The control logic circuit also compares a number of the fail data bits with a reference value and controls generation of the column address according to the comparison result.
    • 闪速存储器件及其编程方法包括存储单元阵列,通过/失败校验电路和控制逻辑电路。 存储单元阵列包括以行和列排列的多个存储单元。 通过/失败检查电路验证在列扫描操作期间由列地址选择的数据位是否具有程序数据值。 控制逻辑电路根据所选数据位检测故障数据位,并响应于通过/不通过检查电路的验证结果存储列地址。 控制逻辑电路还将多个故障数据位与参考值进行比较,并根据比较结果控制列地址的生成。