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11. 发明授权

US08064245B2 Magnetic random access memory with an elliptical magnetic tunnel junction 有权
标题翻译：具有椭圆磁隧道结的磁随机存取存储器
公开(公告)号：US08064245B2
公开(公告)日：2011-11-22
申请号：US12467171
申请日：2009-05-15
申请人： Ioan Lucian Prejbeanu
发明人： Ioan Lucian Prejbeanu
IPC分类号： G11C11/00
CPC分类号： G11C11/155 , G11C11/161 , G11C11/1675
摘要： A magnetic tunnel junction (MTJ)-based magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure and methods for manufacturing and using same. The TAS MTJ-based MRAM cell includes a magnetic tunnel junction that is formed with an anisotropic shape and that comprises a ferromagnetic storage layer, a reference layer, and an intermediate insulating layer. The ferromagnetic storage layer has a magnetization that is adjustable above a high temperature threshold; whereas, the reference layer has a fixed magnetization. The ferromagnetic storage layer is provided with a magnetocrystalline anisotropy that is oriented essentially perpendicular to a long axis of the anisotropic shape of the magnetic tunnel junction. The TAS MTJ-based MRAM cell advantageously limits the effects of dispersion in the magnetic tunnel junction shape anisotropy coming from the fabrication process and features a lower power consumption when compared with conventional MTJ-based MRAM and TAS MTJ-based MRAM cells.
摘要翻译：具有热辅助切换（TAS）写入程序的磁性隧道结（MTJ）磁性随机存取存储器（MRAM）单元及其制造和使用方法。基于TAS MTJ的MRAM单元包括形成为各向异性形状并且包括铁磁存储层，参考层和中间绝缘层的磁性隧道结。铁磁存储层具有高于高温阈值可调的磁化; 而参考层具有固定的磁化强度。铁磁存储层具有基本上垂直于磁性隧道结的各向异性形状的长轴取向的磁晶各向异性。基于TAS MTJ的MRAM单元有利地限制了来自制造工艺的磁隧道结形状各向异性中的色散的影响，并且与传统的基于MTJ的MRAM和TAS MTJ型MRAM单元相比具有较低的功耗。

12. 发明申请

US20110110151A1 MAGNETIC MEMORY WITH A THERMALLY ASSISTED SPIN TRANSFER TORQUE WRITING PROCEDURE USING A LOW WRITING CURRENT 有权
标题翻译：具有使用低写入电流的热辅助转印扭矩写入程序的磁记忆
公开(公告)号：US20110110151A1
公开(公告)日：2011-05-12
申请号：US12773318
申请日：2010-05-04
申请人： Ioan Lucian Prejbeanu
发明人： Ioan Lucian Prejbeanu
IPC分类号： G11C11/15 , H01L21/8246 , H01L29/82
CPC分类号： H01F10/329 , B82Y25/00 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L27/226 , H01L43/08
摘要： A magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure, comprising a magnetic tunnel junction formed from a ferromagnetic storage layer having a first magnetization adjustable at a high temperature threshold, a ferromagnetic reference layer having a fixed second magnetization, and an insulating layer, said insulating layer being disposed between the ferromagnetic storage and reference layers; a select transistor being electrically connected to said magnetic tunnel junction and controllable via a word line; a current line, electrically connected to said magnetic tunnel junction, passing at least a write current; characterized in that the magnetocrystalline anisotropy of the ferromagnetic storage layer is substantially orthogonal with the magnetocrystalline anisotropy of the ferromagnetic reference layer. The STT-based TAS-MRAM cell achieves simultaneously thermal stability and requires low write current density.
摘要翻译：一种具有热辅助切换（TAS）写入程序的磁性随机存取存储器（MRAM）单元，包括由具有在高温阈值可调节的第一磁化强度的铁磁存储层形成的磁性隧道结，具有固定秒的铁磁参考层磁化和绝缘层，所述绝缘层设置在铁磁存储器和参考层之间; 选择晶体管电连接到所述磁性隧道结并经由字线可控; 电连接到所述磁性隧道结的电流线，至少通过写入电流; 其特征在于，铁磁存储层的磁晶各向异性基本上与铁磁参考层的磁晶各向异性正交。基于STT的TAS-MRAM单元同时实现热稳定性，并且要求低写入电流密度。

13. 发明授权

US07411817B2 Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same 有权
标题翻译：具有以热辅助方式写入的磁性隧道结的磁存储器及其写入方法
公开(公告)号：US07411817B2
公开(公告)日：2008-08-12
申请号：US11483425
申请日：2006-07-07
申请人： Jean-Pierre Nozieres , Bernard Dieny , Olivier Redon , Ricardo Sousa , Ioan-Lucian Prejbeanu
发明人： Jean-Pierre Nozieres , Bernard Dieny , Olivier Redon , Ricardo Sousa , Ioan-Lucian Prejbeanu
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675 , G11C11/5607
摘要： A system and method for writing to a magnetic memory written in a thermally assisted manner, each memory point formed by a magnetic tunnel junction, and having a substantially circular cross-section of the memory which is parallel to the plane of the layers forming the tunnel junction. The tunnel junction includes at least a trapped layer with a fixed magnetisation direction, a free layer with a variable magnetisation direction with an insulating layer arranged there between. The free layer is formed from at least one soft magnetic layer and a trapped layer, with the two layers being magnetically coupled by contact. During read operations and at rest, the operating temperature of the memory is lower than the blocking temperature of the free and trapped layers, respectively.
摘要翻译：一种用于写入以热辅助方式写入的磁存储器的系统和方法，每个存储点由磁性隧道结形成，并且具有平行于形成隧道的层的平面的存储器的基本圆形的横截面交界处隧道结至少包括具有固定磁化方向的捕获层，具有可变磁化方向的自由层，其间布置有绝缘层。自由层由至少一个软磁层和捕获层形成，其中两层通过接触磁耦合。在读取操作和静止期间，存储器的工作温度分别低于游离和俘获层的阻挡温度。

14. 发明授权

US10002973B2 Magnetic tunnel junction with an improved tunnel barrier 有权
公开(公告)号：US10002973B2
公开(公告)日：2018-06-19
申请号：US13604035
申请日：2012-09-05
申请人： Ioan Lucian Prejbeanu , Celine Portemont , Clarisse Ducruet
发明人： Ioan Lucian Prejbeanu , Celine Portemont , Clarisse Ducruet
IPC分类号： H01L29/82 , G01R33/09 , G11C11/16 , H01L43/08 , H01L21/02 , B82Y10/00 , H01L43/12 , H01F41/30 , B82Y40/00 , B82Y25/00
CPC分类号： H01L29/82 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F41/307 , H01L21/02104 , H01L43/08 , H01L43/12
摘要： The present disclosure concerns a method of fabricating a magnetic tunnel junction suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer, comprising: forming the first ferromagnetic layer; forming the tunnel barrier layer; and forming the second ferromagnetic layer; wherein said forming the tunnel barrier layer comprises depositing a layer of metallic Mg; and oxidizing the deposited layer of metallic Mg such as to transform the metallic Mg into MgO; the step of forming the tunnel barrier layer being performed at least twice such that the tunnel barrier layer comprises at least two layers of MgO.

15. 发明授权

US08514618B2 Magnetic random access memory cell with improved dispersion of the switching field 有权
标题翻译：磁性随机存取存储器单元具有改进的切换场分散性
公开(公告)号：US08514618B2
公开(公告)日：2013-08-20
申请号：US13545303
申请日：2012-07-10
申请人： Lucien Lombard , Ioan Lucian Prejbeanu
发明人： Lucien Lombard , Ioan Lucian Prejbeanu
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： The present disclosure concerns a magnetic random access memory MRAM cell comprising a tunnel magnetic junction formed from a first ferromagnetic layer, a second ferromagnetic layer having a second magnetization that can be oriented relative to an anisotropy axis of the second ferromagnetic layer at a predetermined high temperature threshold, and a tunnel barrier; a first current line extending along a first direction and in communication with the magnetic tunnel junction; the first current line being configured to provide an magnetic field for orienting the second magnetization when carrying a field current; wherein the MRAM cell is configured with respect to the first current line such that when providing the magnetic field, at least a component of the magnetic field is substantially perpendicular to said anisotropy axis. The MRAM cell has an improved switching efficiency, lower power consumption and improved dispersion of the switching field compared to conventional MRAM cells.
摘要翻译：本公开涉及一种磁性随机存取存储器MRAM单元，其包括由第一铁磁层形成的隧道磁结，第二铁磁层具有第二磁化强度，该第二磁化强度可相对于第二铁磁层的各向异性轴在预定高温阈值和隧道屏障; 沿着第一方向延伸并与磁性隧道结连通的第一电流线; 所述第一电流线被配置为提供用于在携带场电流时定向所述第二磁化的磁场; 其中所述MRAM单元相对于所述第一电流线配置，使得当提供所述磁场时，所述磁场的至少一个分量基本上垂直于所述各向异性轴。与常规MRAM单元相比，MRAM单元具有改进的开关效率，更低的功率消耗和改进的开关场的色散。

16. 发明授权

US08391053B2 Magnetic memory with a thermally assisted writing procedure and reduced writing field 有权
标题翻译：具有热辅助写入程序和减少写字段的磁记忆体
公开(公告)号：US08391053B2
公开(公告)日：2013-03-05
申请号：US12773072
申请日：2010-05-04
申请人： Ioan Lucian Prejbeanu , Clarisse Ducruet
发明人： Ioan Lucian Prejbeanu , Clarisse Ducruet
IPC分类号： G11C11/10 , G11C11/15
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure, comprising a magnetic tunnel junction formed from a ferromagnetic storage layer having a first magnetization adjustable at a high temperature threshold, a ferromagnetic reference layer having a fixed second magnetization direction, and an insulating layer, said insulating layer being disposed between the ferromagnetic storage and reference layers; a select transistor being electrically connected to said magnetic tunnel junction and controllable via a word line; a current line electrically connected to said magnetic tunnel junction; characterized in that the magnetocrystalline anisotropy of the ferromagnetic storage layer is essentially orthogonal with the magnetocrystalline anisotropy of the ferromagnetic reference layer. The TAS-MRAM cell of the invention can be written with a smaller magnetic field than the one used in conventional TAS-MRAM cells and has low power consumption.
摘要翻译：一种具有热辅助切换（TAS）写入程序的磁性随机存取存储器（MRAM）单元，包括由具有在高温阈值可调节的第一磁化强度的铁磁存储层形成的磁性隧道结，具有固定秒的铁磁参考层磁化方向和绝缘层，所述绝缘层设置在铁磁存储器和参考层之间; 选择晶体管电连接到所述磁性隧道结并经由字线可控; 电连接到所述磁性隧道结的电流线; 其特征在于，铁磁存储层的磁晶各向异性基本上与铁磁参考层的磁晶各向异性正交。本发明的TAS-MRAM单元可以写入比常规TAS-MRAM单元中使用的磁场更小的磁场，并且具有低功耗。

17. 发明授权

US08102701B2 Magnetic memory with a thermally assisted writing procedure 有权
标题翻译：具有热辅助写入程序的磁记忆体
公开(公告)号：US08102701B2
公开(公告)日：2012-01-24
申请号：US12813549
申请日：2010-06-11
申请人： Ioan Lucian Prejbeanu , Jean-Pierre Nozieres
发明人： Ioan Lucian Prejbeanu , Jean-Pierre Nozieres
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161
摘要： A magnetic memory device of MRAM type with a thermally-assisted writing procedure, the magnetic memory device being formed from a plurality of memory cells, each memory cell comprising a magnetic tunnel junction, the magnetic tunnel junction comprising a magnetic storage layer in which data can be written in a writing process; a reference layer, having a magnetization being always substantially in the same direction at any time of the writing process; an insulating layer between the reference layer and the storage layer; wherein the magnetic tunnel junction further comprises a writing layer made of a ferrimagnetic 3d-4f amorphous alloy, and comprising a net magnetization containing a first magnetization contribution originating from the sub-lattice of 3d transition elements and a second magnetization contribution originating from the sub-lattice of 4f rare-earth elements. The magnetic memory device has a low power consumption.
摘要翻译：一种具有热辅助写入程序的MRAM型磁存储器件，所述磁存储器件由多个存储器单元形成，每个存储器单元包括磁性隧道结，所述磁性隧道结包括磁性存储层，其中数据可以写在写作过程中; 在写入处理的任何时间具有总是基本上沿相同方向的磁化的参考层; 在参考层和存储层之间的绝缘层; 其中所述磁隧道结还包括由亚铁磁性3d-4f非晶态合金制成的书写层，并且包括源自所述三维过渡元件的子格子的第一磁化贡献的净磁化和源自所述子晶格的第二磁化贡献， 4f稀土元素晶格。磁存储器件具有低功耗。

18. 发明申请

US20100246254A1 MAGNETIC MEMORY WITH A THERMALLY ASSISTED WRITING PROCEDURE 有权
标题翻译：具有热辅助写入程序的磁记忆
公开(公告)号：US20100246254A1
公开(公告)日：2010-09-30
申请号：US12813549
申请日：2010-06-11
申请人： Ioan Lucian Prejbeanu , Jean-Pierre Nozieres
发明人： Ioan Lucian Prejbeanu , Jean-Pierre Nozieres
IPC分类号： G11C11/14 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/161
摘要： A magnetic memory device of MRAM type with a thermally-assisted writing procedure, the magnetic memory device being formed from a plurality of memory cells, each memory cell comprising a magnetic tunnel junction, the magnetic tunnel junction comprising a magnetic storage layer in which data can be written in a writing process; a reference layer, having a magnetization being always substantially in the same direction at any time of the writing process; an insulating layer between the reference layer and the storage layer; wherein the magnetic tunnel junction further comprises a writing layer made of a ferrimagnetic 3d-4f amorphous alloy, and comprising a net magnetization containing a first magnetization contribution originating from the sub-lattice of 3d transition elements and a second magnetization contribution originating from the sub-lattice of 4f rare-earth elements. The magnetic memory device has a low power consumption.
摘要翻译：一种具有热辅助写入程序的MRAM型磁存储器件，所述磁存储器件由多个存储器单元形成，每个存储器单元包括磁性隧道结，所述磁性隧道结包括磁性存储层，其中数据可以写在写作过程中; 在写入处理的任何时间具有总是基本上沿相同方向的磁化的参考层; 在参考层和存储层之间的绝缘层; 其中所述磁隧道结还包括由亚铁磁性3d-4f非晶态合金制成的书写层，并且包括源自所述三维过渡元件的子格子的第一磁化贡献的净磁化和源自所述子晶格的第二磁化贡献， 4f稀土元素晶格。磁存储器件具有低功耗。

19. 发明申请

US20090290413A1 Magnetic Random Access Memory with an Elliptical magnetic tunnel junction 有权
标题翻译：具有椭圆磁隧道结的磁性随机存取存储器
公开(公告)号：US20090290413A1
公开(公告)日：2009-11-26
申请号：US12467171
申请日：2009-05-15
申请人： Ioan Lucian Prejbeanu
发明人： Ioan Lucian Prejbeanu
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： G11C11/155 , G11C11/161 , G11C11/1675
摘要： A magnetic tunnel junction (MTJ)-based magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure and methods for manufacturing and using same. The TAS MTJ-based MRAM cell includes a magnetic tunnel junction that is formed with an anisotropic shape and that comprises a ferromagnetic storage layer, a reference layer, and an intermediate insulating layer. The ferromagnetic storage layer has a magnetization that is adjustable above a high temperature threshold; whereas, the reference layer has a fixed magnetization. The ferromagnetic storage layer is provided with a magnetocrystalline anisotropy that is oriented essentially perpendicular to a long axis of the anisotropic shape of the magnetic tunnel junction. The TAS MTJ-based MRAM cell advantageously limits the effects of dispersion in the magnetic tunnel junction shape anisotropy coming from the fabrication process and features a lower power consumption when compared with conventional MTJ-based MRAM and TAS MTJ-based MRAM cells.
摘要翻译：具有热辅助切换（TAS）写入程序的磁性隧道结（MTJ）磁性随机存取存储器（MRAM）单元及其制造和使用方法。基于TAS MTJ的MRAM单元包括形成为各向异性形状并且包括铁磁存储层，参考层和中间绝缘层的磁性隧道结。铁磁存储层具有高于高温阈值可调的磁化; 而参考层具有固定的磁化强度。铁磁存储层具有基本上垂直于磁性隧道结的各向异性形状的长轴取向的磁晶各向异性。基于TAS MTJ的MRAM单元有利地限制了来自制造工艺的磁隧道结形状各向异性中的色散的影响，并且与传统的基于MTJ的MRAM和TAS MTJ型MRAM单元相比具有较低的功耗。

20. 发明授权

US08717812B2 Thermally assisted magnetic random access memory element with improved endurance 有权
标题翻译：热辅助磁性随机存取存储元件具有更好的耐久性
公开(公告)号：US08717812B2
公开(公告)日：2014-05-06
申请号：US13281525
申请日：2011-10-26
申请人： Kenneth Mackay , Ioan Lucian Prejbeanu
发明人： Kenneth Mackay , Ioan Lucian Prejbeanu
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , B82Y40/00 , G11C11/1675 , H01F10/3254 , H01F41/304 , H01L43/08
摘要： The present disclosure concerns a magnetic memory element suitable for a thermally-assisted switching write operation, comprising a current line in electrical communication with one end of a magnetic tunnel junction, the magnetic tunnel junction comprising: a first ferromagnetic layer having a fixed magnetization; a second ferromagnetic layer having a magnetization that can be freely aligned at a predetermined high temperature threshold; and a tunnel barrier provided between the first and second ferromagnetic layer; the current line being adapted to pass a heating current through the magnetic tunnel junction during the write operation; wherein said magnetic tunnel junction further comprises at least one heating element being adapted to generate heat when the heating current is passed through the magnetic tunnel junction; and a thermal barrier in series with said at least one heating element, said thermal barrier being adapted to confine the heat generated by said at least one heating element within the magnetic tunnel junction.
摘要翻译：本公开涉及适用于热辅助切换写入操作的磁存储元件，包括与磁性隧道结的一端电连通的电流线，所述磁性隧道结包括：具有固定磁化强度的第一铁磁层; 具有可以在预定高温阈值自由对准的磁化的第二铁磁层; 以及设置在所述第一和第二铁磁层之间的隧道势垒; 所述当前线适于在写入操作期间使加热电流通过所述磁性隧道结; 其中所述磁性隧道结还包括至少一个加热元件，其适于在所述加热电流通过所述磁性隧道结时产生热量; 以及与所述至少一个加热元件串联的热障，所述热障适合于将由所述至少一个加热元件产生的热量限制在磁隧道结内。

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