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11. 发明申请

US20090047782A1 METHOD FOR MANUFACTURING A DEVICE HAVING A HIGH ASPECT RATIO VIA 有权
标题翻译：用于制造具有高比例比例的器件的方法
公开(公告)号：US20090047782A1
公开(公告)日：2009-02-19
申请号：US12170138
申请日：2008-07-09
申请人： Hsueh An YANG , Po Jen CHENG
发明人： Hsueh An YANG , Po Jen CHENG
IPC分类号： H01L21/44
CPC分类号： H01L21/0272 , H01L21/31144 , H01L21/32115 , H01L24/11 , H01L2224/05001 , H01L2224/05023 , H01L2224/05026 , H01L2224/051 , H01L2224/056 , H01L2924/14 , H01L2924/19041 , H01L2924/00014
摘要： Method for manufacturing a device having a conductive via includes the following steps. A dielectric material layer including a through hole is formed on a substrate. A seed metallic layer is formed on the dielectric material layer and in the through hole. A metallic layer is formed on the seed metallic layer, and is filled in the through hole. The metallic layer located over the seed metallic layer and outside the through hole is etched by a spin etching process, whereby the metallic layer located in the through hole is formed to a lower portion. An upper portion is formed on the lower portion, and a metallic trace is formed on the seed metallic layer, wherein the upper and lower portions is formed to a conductive via, and the conductive via and the metallic trace expose a part of the seed metallic layer. The exposed seed metallic layer is etched.
摘要翻译：具有导电通孔的装置的制造方法包括以下步骤。在基板上形成包括通孔的电介质材料层。在电介质材料层和通孔中形成种子金属层。在种子金属层上形成金属层，并填充在通孔中。通过旋转蚀刻工艺蚀刻位于种子金属层上方的金属层和通孔外部，由此将位于通孔中的金属层形成为下部。在下部形成上部，在种子金属层上形成金属线，其中上部和下部形成为导电通孔，并且导电通孔和金属迹线暴露出种子金属的一部分层。暴露的种子金属层被蚀刻。

12. 发明申请

US20050280331A1 Two-axis device and manufacturing method therefor 失效
标题翻译：双轴装置及其制造方法
公开(公告)号：US20050280331A1
公开(公告)日：2005-12-22
申请号：US10951529
申请日：2004-09-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： B81B7/02 , B81C1/00 , C23F1/00 , C23F4/00 , G02B26/08 , G02B26/10 , H02N1/00
CPC分类号： G02B26/0841 , C23F4/00 , H02N1/006
摘要： A two-axis device is provided. The two-axis device includes a first substrate having a plurality of electrodes, a first connecting layer located on the first substrate, an actuating layer, a second connecting layer and a cover. The actuating layer is connected to the first substrate via the first connecting layer and includes a circular portion, an actuating portion, a first shaft and a second shaft. The second connecting layer is connected to the actuating layer and the cover is connected to the actuating layer via the second connecting layer. In addition, a vacuum concavity is formed by the first substrate, the first connecting layer, the actuating layer, the second connecting layer and the cover. The actuating portion and the first shaft are located in the vacuum concavity, and the second shaft extends outside of the vacuum concavity.
摘要翻译：提供了两轴设备。双轴装置包括具有多个电极的第一基板，位于第一基板上的第一连接层，致动层，第二连接层和盖。所述致动层经由所述第一连接层连接到所述第一基板，并且包括圆形部分，致动部分，第一轴和第二轴。第二连接层连接到致动层，并且盖通过第二连接层连接到致动层。此外，由第一基板，第一连接层，致动层，第二连接层和盖形成真空凹部。致动部和第一轴位于真空凹部中，第二轴延伸到真空凹部的外侧。

13. 发明申请

US20050280116A1 Integration manufacturing process for MEMS device 审中-公开
标题翻译： MEMS器件集成制造工艺
公开(公告)号：US20050280116A1
公开(公告)日：2005-12-22
申请号：US11091062
申请日：2005-03-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： H01L29/00
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

14. 发明授权

US08368152B2 MEMS device etch stop 有权
标题翻译： MEMS器件蚀刻停止
公开(公告)号：US08368152B2
公开(公告)日：2013-02-05
申请号：US13089027
申请日：2011-04-18
申请人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
发明人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
IPC分类号： H01L29/84 , H01L27/14 , H01L21/00 , G01P15/08
CPC分类号： H01L29/84 , B81B2203/0307 , B81C1/00039 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.
摘要翻译：本公开提供了一种微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括衬底，在衬底上方的电介质层，在电介质层上方的蚀刻停止层，以及在电介质层上方的两个锚栓，两个锚栓每个接触蚀刻停止层或顶部金属层，设置在电介质层的上方。该装置还包括一个MEMS结构层，该MEMS结构层设置在形成在两个锚栓之间的空腔之上，并且位于蚀刻停止层上方，从牺牲层释放出来。

15. 发明申请

US20120261830A1 MEMS DEVICE ETCH STOP 有权
标题翻译： MEMS器件ETCH STOP
公开(公告)号：US20120261830A1
公开(公告)日：2012-10-18
申请号：US13089027
申请日：2011-04-18
申请人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
发明人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L29/84 , B81B2203/0307 , B81C1/00039 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.
摘要翻译：本公开提供了一种微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括衬底，在衬底上方的电介质层，在电介质层上方的蚀刻停止层，以及在电介质层上方的两个锚栓，两个锚栓每个接触蚀刻停止层或顶部金属层，设置在电介质层的上方。该器件还包括一个MEMS结构层，该MEMS结构层设置在形成在两个锚栓之间的空腔之上，并且位于蚀刻停止层上方，从牺牲层释放出来。

16. 发明授权

US08277667B2 Magnetic element and manufacturing method therefor 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US08277667B2
公开(公告)日：2012-10-02
申请号：US12013843
申请日：2008-01-14
申请人： Hsueh-An Yang , Weileun Fang , Tsung-Lin Tang
发明人： Hsueh-An Yang , Weileun Fang , Tsung-Lin Tang
IPC分类号： H01L21/302 , B81C1/00
CPC分类号： B81C1/00142 , B81B3/0021 , B81B2201/042 , B81C1/0019 , H01F7/122 , H01F7/14 , H01F41/041 , H01F2007/068 , H02K33/18
摘要： A magnetic element and its manufacturing method are provided. A magnetic element includes an actuation part having a first surface and a second surface, a torsion bar connected to the actuation part, and a frame connected to the first torsion bar, wherein the first surface of the actuation part is an uneven surface. The manufacturing method of the magnetic element starts with forming an passivation layer on a substrate and defining a special area by the mask method, then continues with forming the adhesion layer and electroplate-initializing layer on the substrate sequentially. The photoresist layer are formed and the magnetic-inductive material is electroformed on the electroplate area. Finally, the substrate is etched and the passivation layer is removed to obtain the magnetic element. The manufacturing method of magnetic element of the present invention can be applied in the microelectromechanical system field and other categories.
摘要翻译：提供了磁性元件及其制造方法。磁性元件包括具有第一表面和第二表面的致动部件，连接到致动部件的扭杆和连接到第一扭杆的框架，其中致动部件的第一表面是不平坦的表面。磁性元件的制造方法首先在基板上形成钝化层，通过掩模法形成特殊区域，然后依次在基板上形成粘合层和电镀初始化层。形成光致抗蚀剂层，并且将磁感应材料电铸在电镀区域上。最后，蚀刻衬底并去除钝化层以获得磁性元件。本发明的磁性元件的制造方法可以应用于微机电系统领域等。

17. 发明申请

US20120074554A1 BOND RING FOR A FIRST AND SECOND SUBSTRATE 有权
标题翻译：第一和第二基板的绑定环
公开(公告)号：US20120074554A1
公开(公告)日：2012-03-29
申请号：US12891062
申请日：2010-09-27
申请人： Chun-Wen Cheng , Hsueh-An Yang
发明人： Chun-Wen Cheng , Hsueh-An Yang
IPC分类号： H01L23/10 , H01L21/02
CPC分类号： B81C1/00269 , B81C1/0038 , B81C2203/0118 , B81C2203/019 , H01L23/02 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a device having a plurality of bonded substrates. The substrates are bonded by a first bond ring and a second bond ring. In an embodiment, the first bond ring is a eutectic bond and the second bond ring is at least one of an organic material and a eutectic bond. The second bond ring encircles the first bond ring. The first bond ring provides a hermetic region of the device. In a further embodiment, a plurality of wafers are bonded which include a third bond ring disposed at the periphery of the wafers.
摘要翻译：本公开提供了一种具有多个键合衬底的器件。基板通过第一键环和第二键环键合。在一个实施方案中，第一键环是共晶键，第二键环是有机材料和共晶键中的至少一种。第二个键环围绕第一个结合环。第一粘结环提供该装置的密封区域。在另一实施例中，多个晶片被结合，其包括设置在晶片周边的第三接合环。

18. 发明授权

US08030111B2 Integration manufacturing process for MEMS device 有权
标题翻译： MEMS器件集成制造工艺
公开(公告)号：US08030111B2
公开(公告)日：2011-10-04
申请号：US12326355
申请日：2008-12-02
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： H01L21/00
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

19. 发明申请

US20080303167A1 DEVICE HAVING HIGH ASPECT-RATIO VIA STRUCTURE IN LOW-DIELECTRIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有通过低介电材料中的结构的高比例的器件及其制造方法
公开(公告)号：US20080303167A1
公开(公告)日：2008-12-11
申请号：US12050601
申请日：2008-03-18
申请人： Wei Chung WANG , Po Jen CHENG , Hsueh An YANG , Pei Chun CHEN
发明人： Wei Chung WANG , Po Jen CHENG , Hsueh An YANG , Pei Chun CHEN
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/02118 , H01L21/312 , H01L23/525 , H01L24/03 , H01L24/05 , H01L2225/06572 , H01L2924/01014 , H01L2924/01019 , H01L2924/01078 , H01L2924/14 , H01L2924/19041
摘要： A method for manufacturing a device having a via structure includes the following steps. A seed metallic layer is formed on a substrate. A patterned metallic-trace layer is formed on the seed metallic layer. A positive-type photoresist layer is formed on the patterned metallic-trace layer and seed metallic layer. The photoresist layer is patterned for defining a through hole which exposes a part of the patterned metallic-trace layer, wherein the through hole has a high aspect ratio. A metallic material is electroplated in the through hole so as to form a metallic pillar. The photoresist layer is removed. A part of the seed metallic layer is etched, whereby traces of the patterned metallic-trace layer are electrically isolated from each other. A dielectric material layer is formed on the substrate for sealing the patterned metallic-trace layer and a part of the metallic pillar and exposing a top surface of the metallic pillar.
摘要翻译：用于制造具有通孔结构的器件的方法包括以下步骤。种子金属层形成在基片上。在种子金属层上形成图案化的金属痕迹层。在图案化的金属痕迹层和种子金属层上形成正型光致抗蚀剂层。图案化光致抗蚀剂层以限定暴露图案化的金属 - 迹线层的一部分的通孔，其中通孔具有高纵横比。在通孔中电镀金属材料，形成金属柱。去除光致抗蚀剂层。蚀刻种子金属层的一部分，由此图案化的金属迹线层的迹线彼此电隔离。在基板上形成电介质材料层，用于密封图案化的金属迹线层和金属柱的一部分并暴露金属柱的顶表面。

20. 发明申请

US20080188026A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR PACKAGE STRUCTURE HAVING MICRO-ELECTRO-MECHANICAL SYSTEMS 审中-公开
标题翻译：制造具有微电子机械系统的半导体封装结构的方法
公开(公告)号：US20080188026A1
公开(公告)日：2008-08-07
申请号：US12023274
申请日：2008-01-31
申请人： Meng-Jen Wang , Hsueh-An Yang
发明人： Meng-Jen Wang , Hsueh-An Yang
IPC分类号： H01L21/50
CPC分类号： B81C1/00269 , B81B2201/047 , B81C2203/0127 , H01L2924/16235
摘要： The present invention relates to a method for manufacturing a semiconductor package structure having Micro-Electro-Mechanical Systems (MEMS). A plurality of Micro-Electro-Mechanical Systems is disposed on a plurality of substrate units of a substrate, and a plurality of cover units of a cover plate is used to seal the corresponding Micro-Electro-Mechanical Systems. Next, a body of the cover plate is removed, and the substrate is then cut, so as to form a plurality of semiconductor package structures. In doing so, the body is removed and the substrate is cut without patterning the cover plate and the substrate in advance to form aligning marks, such that the packaging process of the present invention is simpler. In addition, the cover plate is not limited to transparent material, so that various materials can be used in various applications. Furthermore, the body can be removed by using a simple grinding process, such that the manufacturing cost can be reduced.
摘要翻译：本发明涉及一种用于制造具有微机电系统（MEMS）的半导体封装结构的方法。多个微电子机械系统设置在基板的多个基板单元上，并且使用盖板的多个盖单元来密封相应的微机电系统。接下来，去除盖板的主体，然后切割基板，以便形成多个半导体封装结构。在这样做时，物体被去除并且基板被预先切割而未图案化盖板和基板以形成对准标记，使得本发明的包装过程更简单。此外，盖板不限于透明材料，因此可以在各种应用中使用各种材料。此外，可以通过使用简单的研磨工艺去除主体，从而可以降低制造成本。

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