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    • 14. 发明授权
    • Semiconductor devices and systems-on-chip having the same
    • 半导体器件和片上系统具有相同的功能
    • US08677166B2
    • 2014-03-18
    • US13084924
    • 2011-04-12
    • Heon-Hee LeeHoi-Jin Lee
    • Heon-Hee LeeHoi-Jin Lee
    • G06F1/00H03L5/00
    • H03K19/0013H03K19/00361H03K19/01721
    • A semiconductor device includes a power gating unit, a combinational logic unit and a clamping unit. The power gating unit is turned on to output an internal signal at an output electrode based on an input signal or turned off according to operation modes. The combinational logic unit includes an input electrode directly connected to the output electrode of the power gating unit through a data line, and generates an output signal based on the internal signal received through the data line. The clamping unit is turned on to clamp the internal signal at a logic high level or at a logic low level or turned off according to the operation modes. The semiconductor device clamps the output electrode of the power gating unit without degrading an operation speed of the semiconductor device.
    • 半导体器件包括电源门控单元,组合逻辑单元和夹紧单元。 电源门控单元导通,根据输入信号在输出电极输出内部信号,或根据操作模式关闭。 组合逻辑单元包括通过数据线直接连接到电力门控单元的输出电极的输入电极,并且基于通过数据线接收的内部信号产生输出信号。 夹紧单元导通,根据操作模式将内部信号钳位在逻辑高电平或逻辑低电平或关闭。 半导体器件夹紧功率选通单元的输出电极,而不会降低半导体器件的操作速度。
    • 15. 发明申请
    • SCAN FLIP-FLOP CIRCUITS AND SCAN TEST CIRCUITS INCLUDING THE SAME
    • 扫描FLOP-FLOP电路和扫描测试电路,包括它们
    • US20130241594A1
    • 2013-09-19
    • US13890517
    • 2013-05-09
    • Hoi-Jin LEEBai-Sun KONG
    • Hoi-Jin LEEBai-Sun KONG
    • H03K19/003
    • H03K19/003H03K3/356182
    • A scan flip-flop circuit includes an input unit and an output unit. The data output unit is configured to provide a data output terminal with a data output signal in response to a data input signal and a first control signal in a first operation mode, and the data output unit is configured to prohibit the data output terminal from being provided with a power supply voltage and a ground voltage applied to the scan flip-flop circuit in response to the data input signal and the first control signal in a second operation mode. The scan output unit is configured to provide a scan output terminal with a scan output signal in response to a scan input signal and a second control signal in the second operation mode.
    • 扫描触发器电路包括输入单元和输出单元。 数据输出单元被配置为在第一操作模式中响应于数据输入信号和第一控制信号向数据输出端提供数据输出信号,并且数据输出单元被配置为禁止数据输出端 在第二操作模式中响应于数据输入信号和第一控制信号,提供施加到扫描触发器电路的电源电压和接地电压。 扫描输出单元被配置为在第二操作模式中响应于扫描输入信号和第二控制信号向扫描输出端提供扫描输出信号。
    • 17. 发明授权
    • Semiconductor test apparatus and method thereof and multiplexer and method thereof
    • 半导体测试装置及其多路复用器及其方法
    • US07539598B2
    • 2009-05-26
    • US10976038
    • 2004-10-29
    • Mi-Sook JangHoi-Jin Lee
    • Mi-Sook JangHoi-Jin Lee
    • G06F11/30G21C17/00G01R31/00G01R31/14
    • G11C29/48G11C2029/3202
    • A semiconductor test apparatus for determining memory failure, including a first at least one multiplexer. The first at least one multiplexer may include a first transistor and a second transistor, the first transistor and the second transistor being different sizes. The semiconductor may include a scan cell, the scan cell including a second at least one multiplexer. The second at least one multiplexer may include a third transistor and a fourth transistor, the third transistor and the fourth transistor being different sizes. Another semiconductor test apparatus including a plurality of scan cells and a plurality of multiplexers, each of the plurality of scan cells and the plurality of multiplexers formed in a single wrapper.
    • 一种用于确定存储器故障的半导体测试装置,包括第一至少一个复用器。 第一至少一个多路复用器可以包括第一晶体管和第二晶体管,第一晶体管和第二晶体管是不同的尺寸。 半导体可以包括扫描单元,扫描单元包括第二至少一个复用器。 第二至少一个多路复用器可以包括第三晶体管和第四晶体管,第三晶体管和第四晶体管是不同的尺寸。 另一种半导体测试装置包括多个扫描单元和多个多路复用器,多个扫描单元和多个复用器中的每一个形成在单个封装中。
    • 19. 发明授权
    • Cache system having branch target address cache
    • 具有分支目标地址缓存的缓存系统
    • US07346737B2
    • 2008-03-18
    • US11114464
    • 2005-04-26
    • Hoi-Jin Lee
    • Hoi-Jin Lee
    • G06F12/00
    • G06F9/3804G06F12/0875Y02D10/13
    • A cache system has a branch target address cache, including a storage unit for storing branch target address cache (BTAC) access bits each corresponding to cache lines of an instruction cache. The BTAC access bits represent a presence of a branch instruction on the next cache line of a cache line corresponding to the instruction cache. The BTAC is selectively accessed in accordance with values of the BTAC access bits corresponding to I'th (I is a positive integer) cache lines presently accessed in the instruction cache.
    • 缓存系统具有分支目标地址高速缓存,包括存储单元,用于存储分别对应于指令高速缓存行的高速缓存行的目标地址高速缓存(BTAC)访问位。 BTAC访问位表示在对应于指令高速缓存的高速缓存行的下一个高速缓存行上存在分支指令。 根据当前在指令高速缓存中访问的I'th(I是正整数)高速缓存行的BTAC访问位的值有选择地访问BTAC。
    • 20. 发明授权
    • Semiconductor device with speed binning test circuit and test method thereof
    • 具有速度分组测试电路的半导体器件及其测试方法
    • US07260754B2
    • 2007-08-21
    • US10720123
    • 2003-11-25
    • Hoi-Jin Lee
    • Hoi-Jin Lee
    • G01R31/28
    • G11C29/025G01R31/31718G01R31/31725G11C29/02G11C29/50012
    • A speed binning test circuit for a semiconductor device may include a plurality of circuit groups arranged along a boundary of a chip circuit. Each circuit group may include a different number of unit delay circuits that may form a chain structure. The speed binning test circuit may also include a plurality of pads. Each pad may be arranged between a pair of circuit groups so that at least one output terminal of a unit delay circuit of one of the plurality of circuit groups is connected to one of the pads. The speed binning test device performs a speed binning test method in which a signal through the circuit groups is delayed, and on-chip-variations are monitored to determine a total signal delay time through the chain structure.
    • 用于半导体器件的速度合并测试电路可以包括沿着芯片电路的边界布置的多个电路组。 每个电路组可以包括可以形成链结构的不同数量的单位延迟电路。 速度合并测试电路还可以包括多个焊盘。 每个焊盘可以布置在一对电路组之间,使得多个电路组之一的单元延迟电路的至少一个输出端子连接到其中一个焊盘。 速度分档测试装置执行速度合并测试方法,其中通过电路组的信号被延迟,并且监视片上变化以确定通过链结构的总信号延迟时间。