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11. 发明申请

US20100171166A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100171166A1
公开(公告)日：2010-07-08
申请号：US12650367
申请日：2009-12-30
申请人： Woong Lee , Jung-Yoon Ko , Sang-Kyoung Lee , Ho-Min Son , Won-Jun Jang , Jung-geun Jee
发明人： Woong Lee , Jung-Yoon Ko , Sang-Kyoung Lee , Ho-Min Son , Won-Jun Jang , Jung-geun Jee
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L21/28273 , H01L29/42336 , H01L29/66825
摘要： A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.
摘要翻译：提供了一种非易失性存储器件及其制造方法。该方法可以包括在半导体衬底上设置隔离层。隔离层可以从半导体衬底的主表面突出并限定有源区。在由隔离层和有源区的突起限定的凹部中，可以依次形成扩散阻滞多晶型和浮栅。控制栅极可以设置在隔离层上以覆盖扩散阻滞多晶型图案和浮动栅极。

12. 发明申请

US20090108323A1 Method of forming nonvolatile memory device having floating gate and related device 失效
标题翻译：具有浮动栅极和相关器件的非易失性存储器件的形成方法
公开(公告)号：US20090108323A1
公开(公告)日：2009-04-30
申请号：US12228772
申请日：2008-08-15
申请人： Jung-Geun Jee , Ho-Min Son , Yong-Woo Hyung , Jae-Jong Han , Taek-Jin Lim
发明人： Jung-Geun Jee , Ho-Min Son , Yong-Woo Hyung , Jae-Jong Han , Taek-Jin Lim
IPC分类号： H01L29/788 , H01L21/3215 , H01L21/22
CPC分类号： H01L29/42324 , H01L21/76224 , H01L27/115 , H01L27/11521 , H01L29/7887
摘要： A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region.
摘要翻译：提供一种制造非易失性存储器件的方法。该方法包括形成在衬底上限定有源区的隔离图案，在有源区上形成浮置栅极图案，以及在浮栅图案上形成栅极线。浮置栅极图案在有源区域上是自对准的，并且当浮栅图案更靠近有源区域时，其杂质离子浓度变得相对较低。

13. 发明授权

US07179707B2 Method of forming gate electrode in semiconductor device 有权
标题翻译：在半导体器件中形成栅电极的方法
公开(公告)号：US07179707B2
公开(公告)日：2007-02-20
申请号：US10722814
申请日：2003-11-26
申请人： Cha Deok Dong , Ho Min Son
发明人： Cha Deok Dong , Ho Min Son
IPC分类号： H01L21/336 , H01L21/461 , H01L21/302
CPC分类号： H01L21/28247 , H01L21/28061 , H01L21/321 , H01L21/32137
摘要： A method for forming a gate electrode in the semiconductor device is disclosed. The disclosed methods for forming a gate electrode in a semiconductor includes forming a polysilicon film and a metal silicide film sequentially on an upper portion of a semiconductor substrate; performing an annealing process to crystallize the metal silicide film, so that etch rate of the crystallized metal silicide film is similar to that of the polysilicon film; and forming a gate electrode by performing an etching process at one time on the metal silicide film and the polysilicon film using the similar etch rates of the crystallized metal silicide film and the polysilicon film. According to the disclosed methods, the tungsten silicide film is crystallized by an annealing process and the polysilicon film and the crystallized tungsten suicide film are etched at one time to prevent any formation of recesses of the polysilicon film, so that it is possible to form the gate electrode pattern having the vertical profile.
摘要翻译：公开了一种在半导体器件中形成栅电极的方法。所公开的在半导体中形成栅电极的方法包括在半导体衬底的上部依次形成多晶硅膜和金属硅化物膜; 执行退火处理以使金属硅化物膜结晶，使得结晶的金属硅化物膜的蚀刻速率与多晶硅膜的蚀刻速率相似; 以及通过使用结晶化金属硅化物膜和多晶硅膜的相似蚀刻速率在金属硅化物膜和多晶硅膜上一次进行蚀刻工艺来形成栅电极。根据所公开的方法，通过退火处理使硅化钨膜结晶，同时蚀刻多晶硅膜和结晶化硅化钨膜，以防止多晶硅膜的凹陷的形成，从而可以形成栅电极图案具有垂直轮廓。

14. 发明授权

US07037785B2 Method of manufacturing flash memory device 失效
标题翻译：制造闪存设备的方法
公开(公告)号：US07037785B2
公开(公告)日：2006-05-02
申请号：US10618978
申请日：2003-07-14
申请人： Cha Deok Dong , Ho Min Son
发明人： Cha Deok Dong , Ho Min Son
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/76232 , H01L27/115
摘要： Disclosed is a method of manufacturing the flash memory device. The method comprises the steps of sequentially forming a tunnel oxide film, a first polysilicon film and a hard mask film on a semiconductor substrate, etching portions of the hard mask film, the first polysilicon film, the tunnel oxide film and the semiconductor substrate through a patterning process to form a trench within the semiconductor substrate, depositing an oxide film to bury the trench and then polishing the oxide film by means of a chemical mechanical polishing process until the hard mask film is exposed, removing the hard mask film, implementing a cleaning process so that a protrusion of the oxide film is recessed to an extent that the sidewall bottom of the first polysilicon film is not exposed, depositing a second polysilicon film on the results in which the protrusion of the oxide film is recessed and then polishing the second polysilicon film until the protrusion of the oxide film is exposed, forming a dielectric film on the second polysilicon film, and forming a control gate on the dielectric film.
摘要翻译：公开了一种制造闪速存储器件的方法。该方法包括以下步骤：在半导体衬底上依次形成隧道氧化物膜，第一多晶硅膜和硬掩模膜，通过以下步骤蚀刻硬掩模膜，第一多晶硅膜，隧道氧化物膜和半导体衬底的部分图案化工艺以在半导体衬底内形成沟槽，沉积氧化膜以埋入沟槽，然后通过化学机械抛光工艺抛光氧化膜，直到硬掩模膜暴露，去除硬掩模膜，实施清洁处理，使得氧化膜的突出部凹陷到第一多晶硅膜的侧壁底部没有露出的程度，在氧化膜的突起凹陷的结果上沉积第二多晶硅膜，然后抛光第二多晶硅膜多晶硅膜直到氧化膜的突起露出，在第二多晶硅膜上形成电介质膜，并形成对照介质膜上的栅极。

15. 发明申请

US20080064171A1 Method of forming a thin layer and method of manufacturing a semiconductor device 有权
标题翻译：形成薄层的方法和制造半导体器件的方法
公开(公告)号：US20080064171A1
公开(公告)日：2008-03-13
申请号：US11589866
申请日：2006-10-31
申请人： Won-Jun Jang , Ho-Min Son , Woong Lee , Yong-Woo Hyung , Jung-Geun Jee
发明人： Won-Jun Jang , Ho-Min Son , Woong Lee , Yong-Woo Hyung , Jung-Geun Jee
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11539 , H01L27/11568 , H01L29/517 , H01L29/518
摘要： In a method of forming a thin layer (e.g., a charge trapping nitride layer) of a semiconductor device (e.g. a charge trapping type non-volatile memory device), the nitride layer may be formed on a first area of a substrate. A blocking layer may be formed on the nitride layer. An oxide layer may be formed on a second area of the substrate while preventing or reducing an oxidation of the nitride layer by a radical oxidation process in which oxygen radicals react with the second area of the substrate and the blocking layer in the first area of the substrate. The nitride layer may ensure sufficient charge trapping sites and may have a uniform thickness without oxidation thereof in the radical oxidation process.
摘要翻译：在形成半导体器件（例如电荷俘获型非易失性存储器件）的薄层（例如，电荷捕获氮化物层）的方法中，可以在衬底的第一区域上形成氮化物层。可以在氮化物层上形成阻挡层。可以在衬底的第二区域上形成氧化物层，同时通过自由基氧化工艺防止或减少氮化物层的氧化，其中氧自由基与衬底的第二区域反应，并且阻挡层在第一区域中基质。氮化物层可以确保足够的电荷俘获位点，并且可以具有均匀的厚度，而不会在自由基氧化过程中氧化。

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