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    • 16. 发明申请
    • Solution for immersion exposure and immersion exposure method
    • 浸渍曝光和浸渍曝光方法的解决方案
    • US20090130604A1
    • 2009-05-21
    • US11991106
    • 2006-08-22
    • Akifumi KagayamaNorio NakayamaHiroaki Tamatani
    • Akifumi KagayamaNorio NakayamaHiroaki Tamatani
    • G03F7/20C09K3/00
    • G03F7/2041
    • The object is to resolve a finer pattern with a narrower line/space width by immersion lithography technology in the manufacture of a semiconductor or the like. A liquid for use in immersion exposure includes a saturated hydrocarbon compound as a main component, wherein the content of an impurity or impurities having an unsaturated bond or a heteroatom in its structure is respectively as follows: (i) 2 μg/mL or less in total for a compound having a conjugated unsaturated bond; (ii) 30 μg/mL or less in total for a compound having no conjugated unsaturated bond but having a non-conjugated unsaturated bond; (iii) 15 μg/mL or less in total for amines having no unsaturated bond; and (iv) 100 μg/mL or less in total for a heterocyclic compound, alcohols, ethers and a halogen-containing compound, other than above compounds (i) to (iii).
    • 目的是通过浸没式光刻技术在半导体等的制造中解决具有较窄线/空间宽度的更细的图案。 用于浸渍曝光的液体包括饱和烃化合物作为主要成分,其中杂质或其结构中具有不饱和键或杂原子的杂质的含量分别如下:(i)2ug / mL以下 具有共轭不饱和键的化合物的总和; (ii)对于没有共轭不饱和键但具有非共轭不饱和键的化合物,总共为30mug / mL以下; (iii)对于不具有不饱和键的胺,总共为15mug / mL以下; 和(iv)除上述化合物(i)至(iii)以外的杂环化合物,醇,醚和含卤素化合物,总共为100mug / mL以下。