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11. 发明申请

US20100090262A1 SPIN TRANSISTOR, PROGRAMMABLE LOGIC CIRCUIT, AND MAGNETIC MEMORY 有权
标题翻译：旋转晶体管，可编程逻辑电路和磁记忆
公开(公告)号：US20100090262A1
公开(公告)日：2010-04-15
申请号：US12638375
申请日：2009-12-15
申请人： Yoshiaki SAITO , Hideyuki Sugiyama
发明人： Yoshiaki SAITO , Hideyuki Sugiyama
IPC分类号： H01L29/94 , H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , H01L29/66984 , Y10S977/932 , Y10S977/933 , Y10S977/936
摘要： A spin transistor includes a non-magnetic semiconductor substrate having a channel region, a first area, and a second area. The channel region is between the first and the second areas. The spin transistor also includes a first conductive layer located above the first area and made of a ferromagnetic material magnetized in a first direction; and a second conductive layer located above the second area and made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction. The channel region introduces electron spin between the conductive layers. The spin transistor also includes a gate electrode located between the conductive layers and above the channel region; and a tunnel barrier film located between the non-magnetic semiconductor substrate and at least one of the conductive layers.
摘要翻译：自旋晶体管包括具有沟道区，第一区和第二区的非磁性半导体衬底。通道区域在第一和第二区域之间。自旋晶体管还包括位于第一区域上方并由沿第一方向磁化的铁磁材料制成的第一导电层; 以及第二导电层，其位于第二区域上方并由在相对于第一方向反平行的第一方向和第二方向中的一个中被磁化的铁磁材料制成。沟道区域在导电层之间引入电子自旋。自旋晶体管还包括位于导电层之间并位于沟道区之上的栅电极; 以及位于非磁性半导体衬底和至少一个导电层之间的隧道阻挡膜。

12. 发明申请

US20090059659A1 SPIN TRANSISTOR AND MAGNETIC MEMORY 有权
标题翻译：旋转晶体管和磁记忆体
公开(公告)号：US20090059659A1
公开(公告)日：2009-03-05
申请号：US12200169
申请日：2008-08-28
申请人： Tomoaki INOKUCHI , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
发明人： Tomoaki INOKUCHI , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： G11C11/00 , H01L29/51 , H01L29/82
CPC分类号： H01L29/66984 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3286
摘要： A spin transistor includes a first ferromagnetic layer provided on a substrate and having an invariable magnetization direction, a second ferromagnetic layer provided on the substrate apart from the first ferromagnetic layer in a first direction, and having a variable magnetization direction, a plurality of projecting semiconductor layers provided on the substrate to extend in the first direction, and sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a plurality of channel regions respectively provided in the projecting semiconductor layers, and a gate electrode provided on the channel regions.
摘要翻译：自旋晶体管包括设置在基板上并具有不变磁化方向的第一铁磁层，在第一方向上设置在与第一铁磁层隔开的基板上并具有可变磁化方向的第二铁磁层，多个突出半导体设置在基板上以在第一方向上延伸并夹在第一铁磁层和第二铁磁层之间的层，分别设置在突出半导体层中的多个沟道区和设置在沟道区上的栅电极。

13. 发明申请

US20090050948A1 SPIN MOS FIELD EFFECT TRANSISTOR AND TUNNELING MAGNETORESISTIVE EFFECT ELEMENT USING STACK HAVING HEUSLER ALLOY 有权
标题翻译：旋转磁场效应晶体管和隧道电磁效应元件使用具有合金的堆叠
公开(公告)号：US20090050948A1
公开(公告)日：2009-02-26
申请号：US12194797
申请日：2008-08-20
申请人： Mizue ISHIKAWA , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Mizue ISHIKAWA , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L29/82 , G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L29/66984 , H01L43/08
摘要： A spin MOS field effect transistor includes a source electrode and a drain electrode each having a structure obtained by stacking an impurity diffusion layer, a (001)-oriented MgO layer and a Heusler alloy. The impurity diffusion layer is formed in a surface region of a semiconductor layer. The (001)-oriented MgO layer is formed on the impurity diffusion layer. The Heusler alloy is formed on the MgO layer.
摘要翻译：自旋MOS场效应晶体管包括源电极和漏电极，每个源极和漏极具有通过层叠杂质扩散层，（001）取向的MgO层和Heusler合金而获得的结构。杂质扩散层形成在半导体层的表面区域中。（001）取向的MgO层形成在杂质扩散层上。 Heusler合金形成在MgO层上。

14. 发明授权

US07394684B2 Spin-injection magnetic random access memory 有权
标题翻译：旋转注入磁性随机存取存储器
公开(公告)号：US07394684B2
公开(公告)日：2008-07-01
申请号：US11373303
申请日：2006-03-13
申请人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
发明人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.
摘要翻译：本发明的一个自旋注入磁随机存取存储器包括一个磁阻元件，一个通过使用由自旋注入电流产生的自旋极化电子将数据写入磁阻元件的单元，该单元适用于磁阻元件，写入期间磁阻元件的硬磁化方向的磁场。

15. 发明申请

US20070223269A1 SPIN-INJECTION MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：旋转注射磁性随机存取存储器
公开(公告)号：US20070223269A1
公开(公告)日：2007-09-27
申请号：US11750856
申请日：2007-05-18
申请人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/02
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译：根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线，辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

16. 发明申请

US20070177421A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：US20070177421A1
公开(公告)日：2007-08-02
申请号：US11608969
申请日：2006-12-11
申请人： Hideyuki Sugiyama , Yoshiaki Saito , Tomoaki Inokuchi
发明人： Hideyuki Sugiyama , Yoshiaki Saito , Tomoaki Inokuchi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/933 , Y10S977/935
摘要： It is made possible to cause spin inversion at a low current density which does not cause element destruction and to conduct writing with a small current. A magnetoresistance effect element includes: a magnetization pinned layer in which magnetization direction is pinned; a magnetic recording layer in which magnetization direction is changeable, the magnetization direction in the magnetization pinned layer forming an angle which is greater than 0 degree and less than 180 degrees with a magnetization direction in the magnetic recording layer, and the magnetization direction in the magnetic recording layer being inverted by injecting spin-polarized electrons into the magnetic recording layer; and a non-magnetic metal layer provided between the magnetization pinned layer and the magnetic recording layer.
摘要翻译：可以在不会导致元件破坏并以小电流进行写入的低电流密度下引起自旋反转。磁阻效应元件包括：磁化固定层，其中磁化方向被钉扎; 磁化方向可变化的磁记录层，磁化钉扎层中的磁化方向形成大于0度且小于180度的磁化记录层中的磁化方向的磁化方向和磁记录层中的磁化方向记录层通过将自旋极化电子注入磁记录层而被反转; 以及设置在磁化被钉扎层和磁记录层之间的非磁性金属层。

17. 发明申请

US20070097736A1 Spin-injection magnetic random access memory 有权
标题翻译：旋转注入磁性随机存取存储器
公开(公告)号：US20070097736A1
公开(公告)日：2007-05-03
申请号：US11373303
申请日：2006-03-13
申请人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
发明人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.
摘要翻译：本发明的一个自旋注入磁随机存取存储器包括一个磁阻元件，一个通过使用由自旋注入电流产生的自旋极化电子将数据写入磁阻元件的单元，该单元适用于磁阻元件，写入期间磁阻元件的硬磁化方向的磁场。

18. 发明申请

US20070019463A1 Magnetoresistive effect element and magnetic memory 有权
公开(公告)号：US20070019463A1
公开(公告)日：2007-01-25
申请号：US11373305
申请日：2006-03-13
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H01L27/228 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and magnetic memory that operate with low power consumption and low current writing. The magnetoresistive effect element includes: a magnetization free layer including at least two magnetic layers subject to antiferromagnetic coupling and a non-magnetic layer provided between the magnetic layers; a tunnel barrier layer provided on one surface of the magnetization free layer; a first magnetization pinned layer provided on an opposite surface of the tunnel barrier layer from the magnetization free layer; a non-magnetic metal layer provided on an opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided on an opposite surface of the non-magnetic metal layer from the magnetization free layer. The first and second magnetization pinned layers are substantially the same in magnetization direction. The non-magnetic metal layer includes Cu, Ag, Au, or an alloy of them. The non-magnetic layer in the magnetization free layer includes Ru, Rh, Ir or an alloy of them.

19. 发明申请

US20060220161A1 Spin-injection FET 有权
标题翻译：自旋注入FET
公开(公告)号：US20060220161A1
公开(公告)日：2006-10-05
申请号：US11255101
申请日：2005-10-21
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/115 , H01L29/66984 , H01L29/7881
摘要： An spin-injection FET according to an embodiment of the invention includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
摘要翻译：根据本发明的实施例的自旋注入FET包括其磁化方向固定的第一铁磁体，其磁化方向由自旋注入电流改变的第二铁磁体，形成在第一和第二铁磁体，第一驱动器/沉降器，其控制自旋喷射电流的方向以确定第二铁磁体的磁化方向，自旋喷射电流通过通道，辅助电流通过的布线辅助电流产生第二铁磁体的磁化容易轴方向的磁场，以及控制通过导线的辅助电流的方向的第二驱动器/沉降片。

20. 发明申请

US20060171198A1 Spin-injection magnetic random access memory 有权
公开(公告)号：US20060171198A1
公开(公告)日：2006-08-03
申请号：US11242906
申请日：2005-10-05
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.

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