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11. 发明申请

US20110175224A1 BONDED STRUCTURE AND MANUFACTURING METHOD FOR BONDED STRUCTURE 有权
标题翻译：粘结结构的粘结结构与制造方法
公开(公告)号：US20110175224A1
公开(公告)日：2011-07-21
申请号：US13007693
申请日：2011-01-17
申请人： Taichi NAKAMURA , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi NAKAMURA , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/29 , H01L23/49513 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29 , H01L2224/29101 , H01L2224/2929 , H01L2224/29313 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/83464 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/181 , H01L2924/00 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01013 , H01L2924/01025 , H01L2924/01015 , H01L2924/01016 , H01L2924/01034 , H01L2924/3512 , H01L2924/01028 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
摘要翻译：一种接合结构的制造方法，其中半导体器件通过接合部分接合到电极上，所述方法包括：首先将其中Bi球的表面涂覆有Ni镀层的焊球安装在电极上加热到等于或大于Bi的熔点的温度; 第二次将焊球压在加热电极上，破裂Ni镀层，将熔融的Bi扩散到加热电极的表面，并形成含Bi和Ni的Bi基金属间化合物的接合材料; 并且第三将半导体器件安装在接合材料上。

12. 发明申请

US20110042817A1 SOLDER JOINT STRUCTURE, AND JOINING METHOD OF THE SAME 审中-公开
标题翻译：焊接接头结构及其接合方法
公开(公告)号：US20110042817A1
公开(公告)日：2011-02-24
申请号：US12935381
申请日：2010-04-27
申请人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
发明人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L23/532 , H01L21/60
CPC分类号： H01L23/49513 , B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K35/325 , B32B15/01 , C22C12/00 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/2908 , H01L2224/29084 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2924/00015 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A layer (105) of a metal having a crystal lattice different from the crystal lattice of a joining material (106) mainly containing Bi is placed on a surface (102b) of a semiconductor device (102), and a layer (104) of an element having a positive value of heat of formation of a compound with the joining material (106) is placed between the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) and the surface (102b) of the semiconductor device (102), thereby preventing the component of the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) from being diffused in the semiconductor device (102).
摘要翻译：将具有与主要包含Bi的接合材料（106）的晶格不同的晶格的金属层（105）放置在半导体器件（102）的表面（102b）上，并且将层（104）具有与接合材料（106）的化合物的形成热的正值的元素被放置在具有与接合材料（106）的晶格不同的晶格的金属的层（105）和表面（102）的（102b），从而防止具有与接合材料（106）的晶格不同的晶格的金属的层（105）的成分在半导体器件（102）中扩散，。

13. 发明申请

US20130241069A1 SEMICONDUCTOR BONDING STRUCTURE BODY AND MANUFACTURING METHOD OF SEMICONDUCTOR BONDING STRUCTURE BODY 有权
标题翻译：半导体结合体结构体的半导体结合体和半导体结合体的制造方法
公开(公告)号：US20130241069A1
公开(公告)日：2013-09-19
申请号：US13823463
申请日：2011-10-17
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
IPC分类号： H01L23/00
CPC分类号： H01L24/30 , B22F2999/00 , B23K1/0016 , B23K35/0238 , B23K35/26 , B23K35/262 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/018 , C22C1/0483 , C22C5/02 , C22C5/06 , C22C9/00 , C22C9/02 , C22C13/00 , H01L21/563 , H01L23/4827 , H01L23/562 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/05147 , H01L2224/05639 , H01L2224/05647 , H01L2224/2733 , H01L2224/29 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83 , H01L2224/83065 , H01L2224/83439 , H01L2224/83444 , H01L2224/8381 , H01L2224/83815 , H01L2924/00015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/351 , H01L2924/3512 , H01L2924/00014 , B22F1/0003 , H01L2924/0105 , H01L2924/00 , H01L2924/00012 , H01L2924/01047 , H01L2924/01083 , H01L2924/01049 , H01L2924/01028 , H01L2224/45099
摘要： A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要翻译：一种接合结构体，其中半导体元件和电极通过焊料材料接合，其中允许接合的部分具有形成在电极侧的第一金属间化合物层，形成在第二金属间化合物层上的第二金属间化合物层半导体元件侧和由夹在第一金属间化合物层和第二金属间化合物层的两层之间的含有Sn和棒状金属间化合物部分的相位构成的第三层，类似金属间化合物部分被层间接合到第一金属间化合物层和第二金属间化合物层上。

14. 发明申请

US20130206204A1 SOLAR CELL MODULE 有权
标题翻译：太阳能电池模块
公开(公告)号：US20130206204A1
公开(公告)日：2013-08-15
申请号：US13880378
申请日：2012-06-28
申请人： Masaki Yoshida , Hidetoshi Kitaura
发明人： Masaki Yoshida , Hidetoshi Kitaura
IPC分类号： H01L31/05
CPC分类号： H01L31/0508 , H01L31/0504 , H01L31/0516 , H02S40/36 , Y02E10/50
摘要： A solar cell module including two or more adjacent solar cells (1a, 1b), a connection member (2) for electrically connecting the solar cells (1a, 1b) to each other, and a solder layer (5) disposed between the solar cells (1) and the connection member (2), wherein first and second opening holes (4a, 4b) are formed at a connection portion of the connection member (2) corresponding to the first and the second solar cells (1a, 1b), the first and the second opening holes (4a, 4b) are configured that solder is deposited into them, and first and second protruding parts (3a, 3b) are formed at a part of the outer periphery of each of the first and second opening holes (4a, 4b) of the connection member(2). By the present invention, it is possible to ensure sufficient thickness of the solder joining layer and to improve reliability for long-term use.
摘要翻译：一种太阳能电池模块，包括两个或多个相邻的太阳能电池（1a，1b），用于将太阳能电池（1a，1b）彼此电连接的连接构件（2）和设置在太阳能电池（1）和连接构件（2），其中在对应于第一和第二太阳能电池（1a，1b）的连接构件（2）的连接部分处形成有第一和第二开孔（4a，4b）第一和第二开孔（4a，4b）被构造成焊料沉积在其中，并且第一和第二突出部分（3a，3b）形成在每个第一和第二开孔的外周的一部分（4a，4b）。通过本发明，可以确保焊料接合层的足够的厚度并提高长期使用的可靠性。

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