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11. 发明申请

US20120061667A1 LIGHT-EMITTING ELEMENT 有权
标题翻译：发光元件
公开(公告)号：US20120061667A1
公开(公告)日：2012-03-15
申请号：US13231250
申请日：2011-09-13
申请人： Chein-Fu Huang , Chao-Hsing CHEN , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chein-Fu Huang , Chao-Hsing CHEN , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L33/32 , H01L33/26
CPC分类号： H01L27/153 , H01L33/20 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes: a substrate including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on the first surface and between the plurality of light-emitting structure units.
摘要翻译：发光元件包括：基板，包括第一表面和与第一表面不同的第二表面; 设置在所述第二表面上的多个发光结构单元; 以及形成在所述第一表面上和所述多个发光结构单元之间的沟槽。

12. 发明申请

US20120025250A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120025250A1
公开(公告)日：2012-02-02
申请号：US13193970
申请日：2011-07-29
申请人： Min-Hsun Hsieh , Wei-Yu Chen , Li-Ming Chang , Chien-Yuan Wang , Chiu-Lin Yao
发明人： Min-Hsun Hsieh , Wei-Yu Chen , Li-Ming Chang , Chien-Yuan Wang , Chiu-Lin Yao
IPC分类号： H01L33/20
CPC分类号： H01L33/382 , H01L33/24 , H01L33/385 , H01L33/387 , H01L2933/0016
摘要： This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.
摘要翻译：本申请提供了一种半导体发光器件及其制造方法。半导体发光器件包括半导体发光结构和薄化衬底。半导体发光结构包括多个半导体层和多个第一通道，其中多个第一通道具有穿透多个半导体层的至少两层的预定深度。

13. 发明申请

US20110253979A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110253979A1
公开(公告)日：2011-10-20
申请号：US13170360
申请日：2011-06-28
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L33/06 , H01L33/58
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

14. 发明申请

US20110121287A1 LIGHT-EMITTING DEVICES AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110121287A1
公开(公告)日：2011-05-26
申请号：US12949863
申请日：2010-11-19
申请人： Chiu Lin Yao , Ya Ian Yang
发明人： Chiu Lin Yao , Ya Ian Yang
IPC分类号： H01L33/22
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22
摘要： Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer on the current diffusion layer. The current diffusion layer has an etched portion and an unetched portion, wherein the etched and unetched portions have a horizontal height difference. The horizontal height difference and the current diffusion layer thickness have a ratio of 20:100 to 70:100.
摘要翻译：公开了一种发光装置，其包括永久性基板，永久性基板上的粘合层，粘合剂层上的电流扩散层，以及电流扩散层上的半导体堆叠层。电流扩散层具有蚀刻部分和未蚀刻部分，其中蚀刻和未蚀刻部分具有水平高度差。水平高差和电流扩散层厚度的比例为20:100至70:100。

15. 发明授权

US09455242B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US09455242B2
公开(公告)日：2016-09-27
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/042 , H01L33/00 , H01L25/075 , H01L31/18 , H01L23/00 , H01L33/44 , H01L33/62
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

16. 发明授权

US08791029B2 Stamp having nanoscale structure and applications therefore in light-emitting device 有权
标题翻译：因此具有纳米尺度结构和应用的印章在发光装置中
公开(公告)号：US08791029B2
公开(公告)日：2014-07-29
申请号：US12222548
申请日：2008-08-12
申请人： Chiu-Lin Yao , Ta-Cheng Hsu , Min-Hsun Hsieh
发明人： Chiu-Lin Yao , Ta-Cheng Hsu , Min-Hsun Hsieh
IPC分类号： H01L21/461
CPC分类号： H01L33/22 , H01L2933/0091
摘要： A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.
摘要翻译：公开了具有纳米级结构的印模及其制造方法。印模包括基板，缓冲层和纳米尺度印模层。该方法包括在衬底上形成缓冲层，并在缓冲层上形成具有纳米尺度结构的印模层。

17. 发明授权

US08502194B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08502194B2
公开(公告)日：2013-08-06
申请号：US13170360
申请日：2011-06-28
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

18. 发明申请

US20120061694A1 LIGHT-EMITTING STRUCTURE 有权
标题翻译：发光结构
公开(公告)号：US20120061694A1
公开(公告)日：2012-03-15
申请号：US13230988
申请日：2011-09-13
申请人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall.
摘要翻译：本申请的实施例公开了一种发光结构，包括第一单元; 第二单位形成在所述第一单元和所述第二单元之间的沟槽，并且具有比所述较不陡峭的侧壁更陡峭的侧壁和更陡峭的侧壁; 以及布置在不太陡峭的侧壁上的电连接。

19. 发明申请

US20120055532A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE 有权
标题翻译：半导体光电器件
公开(公告)号：US20120055532A1
公开(公告)日：2012-03-08
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/0224 , H01L33/08 , H01L33/42
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

20. 发明申请

US20110089444A1 LIGHT-EMITTING ELEMENT 有权
标题翻译：发光元件
公开(公告)号：US20110089444A1
公开(公告)日：2011-04-21
申请号：US12979281
申请日：2010-12-27
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
IPC分类号： H01L33/08
CPC分类号： H01L33/42 , F21K9/00 , H01L25/0753 , H01L27/153 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting structure, and at least a metal line laid on the surface of the light emitting element, wherein the first light emitting stack further includes two electrodes having different polarity formed thereon; the second lighting stack is electrically connected to the conductive connecting structure at the bottom thereof and includes an electrode formed thereon. The insulation section is disposed below the first lighting stack to make the first lighting stack be insulated from the conductive connecting structure. The metal lines and the conductive connecting structure are electrically connected to each of the lighting stacks in parallel connection or series connection.
摘要翻译：发光元件包括载体，布置在载体上的导电连接结构，外延堆叠结构，至少包括设置在导电连接结构上的第一照明堆叠和第二照明堆叠;绝缘部分，设置在外延堆叠结构和所述导电连接结构和至少布置在所述发光元件表面上的金属线，其中所述第一发光层还包括形成在其上的具有不同极性的两个电极; 第二照明堆叠在其底部与导电连接结构电连接并且包括形成在其上的电极。绝缘部分设置在第一照明堆叠的下方，以使第一照明堆叠与导电连接结构绝缘。金属线和导电连接结构以并联或串联连接电连接到每个照明堆叠。

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