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11. 发明申请

US20120138902A1 Edge-Contacted Vertical Carbon Nanotube Transistor 审中-公开
标题翻译：边缘垂直碳纳米管晶体管
公开(公告)号：US20120138902A1
公开(公告)日：2012-06-07
申请号：US13153277
申请日：2011-06-03
申请人： Brian Hunt , James Hartman , Michael J. Bronikowski , Eric Wong , Brian Y. Lim
发明人： Brian Hunt , James Hartman , Michael J. Bronikowski , Eric Wong , Brian Y. Lim
IPC分类号： H01L29/78 , H01L29/06
CPC分类号： H01L27/101 , B82Y10/00 , H01L29/0676 , H01L29/66439 , H01L29/775 , H01L51/0048 , H01L51/057
摘要： A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.
摘要翻译：用于基于碳纳米管的场效应晶体管的垂直器件几何形状具有在沟槽中形成的一个或多个碳纳米管。

12. 发明授权

US07462890B1 Nanotube transistor integrated circuit layout 失效
标题翻译：纳米管晶体管集成电路布局
公开(公告)号：US07462890B1
公开(公告)日：2008-12-09
申请号：US11466893
申请日：2006-08-24
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： H01L31/036
CPC分类号： H01L51/0558 , B82Y10/00 , H01L51/0048 , H01L51/057 , Y10S977/742 , Y10S977/936
摘要： An integrated circuit layout of a carbon nanotube transistor device includes a first and second conductive material. The first conductive material is connected to ends of single-walled carbon nanotubes below (or above) the first conductive material. The second conductive material is not electrically connected to the nanotubes below (or above) the second conductive material. The first conductive material may be metal, and the second conductive material may be polysilicon or metal. The nanotubes are perpendicular to the first conductive material. In one implementation, the first and second conductive materials form interdigitated fingers. In another implementation, the first conductive material forms a serpentine track.
摘要翻译：碳纳米管晶体管器件的集成电路布局包括第一和第二导电材料。第一导电材料连接到第一导电材料下方（或上方）的单壁碳纳米管的端部。第二导电材料不与第二导电材料的下方（或更上方）电连接到纳米管。第一导电材料可以是金属，第二导电材料可以是多晶硅或金属。纳米管垂直于第一导电材料。在一个实施方案中，第一和第二导电材料形成叉指。在另一实施方案中，第一导电材料形成蛇形轨迹。

13. 发明申请

US20080299710A1 Carbon Nanotube Transistor Fabrication 失效
标题翻译：碳纳米管晶体管制造
公开(公告)号：US20080299710A1
公开(公告)日：2008-12-04
申请号：US11870872
申请日：2007-10-11
申请人： Thomas W. Tombler, JR. , Brian Y. Lim
发明人： Thomas W. Tombler, JR. , Brian Y. Lim
IPC分类号： H01L21/335
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure.
摘要翻译：在制造单壁碳纳米管晶体管器件期间，使用具有多个平行孔的多孔模板来保持单壁碳纳米管。多孔模板或多孔结构可以是阳极氧化的氧化铝或另一种材料。可以在多孔结构的一端或两端设置栅极区域。栅电极可以形成并延伸到多孔结构中。

14. 发明授权

US07301191B1 Fabricating carbon nanotube transistor devices 失效
标题翻译：制造碳纳米管晶体管器件
公开(公告)号：US07301191B1
公开(公告)日：2007-11-27
申请号：US11466217
申请日：2006-08-22
申请人： Thomas W. Tombler , Brian Y. Lim
发明人： Thomas W. Tombler , Brian Y. Lim
IPC分类号： H01L27/108 , H01L29/76
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.
摘要翻译：在制造单壁碳纳米管晶体管器件期间，使用具有多个平行孔的多孔模板来保持单壁碳纳米管。多孔模板或多孔结构可以是阳极氧化的氧化铝或另一种材料。可以在多孔结构的一端或两端设置栅极区域。栅电极可以形成并延伸到多孔结构中。本发明的晶体管可以特别适用于功率晶体管或功率放大器应用。

15. 发明授权

US07960713B2 Edge-contacted vertical carbon nanotube transistor 失效
标题翻译：边缘垂直碳纳米管晶体管
公开(公告)号：US07960713B2
公开(公告)日：2011-06-14
申请号：US12346513
申请日：2008-12-30
申请人： Brian Hunt , James Hartman , Michael J. Bronikowski , Eric Wong , Brian Y. Lim
发明人： Brian Hunt , James Hartman , Michael J. Bronikowski , Eric Wong , Brian Y. Lim
IPC分类号： H01L29/78
CPC分类号： H01L27/101 , B82Y10/00 , H01L29/0676 , H01L29/66439 , H01L29/775 , H01L51/0048 , H01L51/057
摘要： A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.
摘要翻译：用于基于碳纳米管的场效应晶体管的垂直器件几何形状具有在沟槽中形成的一个或多个碳纳米管。

16. 发明授权

US07736943B2 Carbon nanotube transistor fabrication 失效
标题翻译：碳纳米管晶体管制造
公开(公告)号：US07736943B2
公开(公告)日：2010-06-15
申请号：US11870872
申请日：2007-10-11
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： H01L21/44
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure.
摘要翻译：在制造单壁碳纳米管晶体管器件期间，使用具有多个平行孔的多孔模板来保持单壁碳纳米管。多孔模板或多孔结构可以是阳极氧化的氧化铝或另一种材料。可以在多孔结构的一端或两端设置栅极区域。栅电极可以形成并延伸到多孔结构中。

17. 发明授权

US07607321B2 Apparatus and method for single-sided loading of a furnace or other process station 失效
标题翻译：用于单面装载炉或其他处理站的装置和方法
公开(公告)号：US07607321B2
公开(公告)日：2009-10-27
申请号：US10773755
申请日：2004-02-06
申请人： Jon W. Lai , Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Jon W. Lai , Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： C03B23/00
CPC分类号： F27D3/06 , F27B17/02
摘要： Solutions permit or facilitate faster and/or easier processing involving loading or unloading of a work module into a process station. For example, the work module may be a processing tube or the like and the process station may be a heating station such as a tube furnace or the like. In one embodiment, the loading is from a single side of a process station. In one embodiment, the work module includes inlets and outlets for fluid flow, with both inlets and outlets being closer toward one side of the work module than the other side.
摘要翻译：解决方案允许或促进将工作模块加载或卸载到处理站中的更快和/或更容易的处理。例如，工作模块可以是处理管等，并且处理站可以是诸如管式炉等的加热站。在一个实施例中，加载来自处理站的单个侧面。在一个实施例中，工作模块包括用于流体流动的入口和出口，两个入口和出口比另一侧更靠近工作模块的一侧。

18. 发明申请

US20090001421A1 NANOTUBE TRANSISTOR INTEGRATED CIRCUIT LAYOUT 失效
标题翻译：纳米晶体管集成电路布局
公开(公告)号：US20090001421A1
公开(公告)日：2009-01-01
申请号：US11466893
申请日：2006-08-24
申请人： Thomas W. Tombler, JR. , Brian Y. Lim
发明人： Thomas W. Tombler, JR. , Brian Y. Lim
IPC分类号： H01L31/036
CPC分类号： H01L51/0558 , B82Y10/00 , H01L51/0048 , H01L51/057 , Y10S977/742 , Y10S977/936
摘要： An integrated circuit layout of a carbon nanotube transistor device includes a first and second conductive material. The first conductive material is connected to ends of single-walled carbon nanotubes below (or above) the first conductive material. The second conductive material is not electrically connected to the nanotubes below (or above) the second conductive material. The first conductive material may be metal, and the second conductive material may be polysilicon or metal. The nanotubes are perpendicular to the first conductive material. In one implementation, the first and second conductive materials form interdigitated fingers. In another implementation, the first conductive material forms a serpentine track.
摘要翻译：碳纳米管晶体管器件的集成电路布局包括第一和第二导电材料。第一导电材料连接到第一导电材料下方（或上方）的单壁碳纳米管的端部。第二导电材料不与第二导电材料的下方（或更上方）电连接到纳米管。第一导电材料可以是金属，第二导电材料可以是多晶硅或金属。纳米管垂直于第一导电材料。在一个实施方案中，第一和第二导电材料形成叉指。在另一实施方案中，第一导电材料形成蛇形轨迹。

19. 发明授权

US07345296B2 Nanotube transistor and rectifying devices 失效
标题翻译：纳米管晶体管和整流装置
公开(公告)号：US07345296B2
公开(公告)日：2008-03-18
申请号：US11162548
申请日：2005-09-14
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： H01L29/06 , H01L29/08 , H01L29/80 , H01L21/336 , H01L21/76
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： Single-walled carbon nanotube transistor and rectifying devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.
摘要翻译：单壁碳纳米管晶体管和整流装置以及制造这种器件的相关方法包括用于单壁碳纳米管的多孔结构。多孔结构可以是阳极化氧化铝或另一种材料。用于晶体管的源极和漏极的电极设置在单壁碳纳米管器件的相对端。可以在多孔结构的一端或两端设置栅极区域。栅电极可以形成为多孔结构。本发明的晶体管可以特别适用于功率晶体管或功率放大器应用。

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