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11. 发明申请

US20170117495A1 HYBRID ORGANIC/INORGANIC EUTECTIC SOLAR CELL 审中-公开
公开(公告)号：US20170117495A1
公开(公告)日：2017-04-27
申请号：US15402744
申请日：2017-01-10
申请人： Solar-Tectic. LLC
发明人： Ashok Chaudhari
IPC分类号： H01L51/42 , H01L51/52 , H01L51/50 , H01G9/20
CPC分类号： H01L51/4213 , H01L27/302 , H01L51/0036 , H01L51/0077 , H01L51/50 , H01L51/5296 , Y02E10/549
摘要： A method and device for improving junctions in an organic, polymer, thin-film semiconductor device, and for facilitating the formation of a Schottky barrier between a polymer film and silicide film.

12. 发明申请

US20160276608A1 HYBRID ORGANIC/INORGANIC EUTECTIC SOLAR CELL 审中-公开
标题翻译：混合有机/无机保护太阳能电池
公开(公告)号：US20160276608A1
公开(公告)日：2016-09-22
申请号：US15138774
申请日：2016-04-26
申请人： Ashok Chaudhari
发明人： Ashok Chaudhari
IPC分类号： H01L51/42 , H01L51/50 , H01L51/52
CPC分类号： H01L51/4213 , H01L31/0392 , H01L51/0096 , H01L51/50 , H01L51/5296 , H01L2031/0344 , Y02E10/549
摘要： A semiconductor assembly including substantially non-crystalline substrate having a predetermined softening point, a textured buffer layer deposited on said substrate, a polymer film deposited on said buffer layer, and an inorganic or silicon inorganic film deposited on said polymer film. The buffer layer, polymer film, and inorganic or silicon inorganic film are each deposited at a respective deposition temperature that is below the softening point of the substrate. A method is disclosed for making a hybrid solar cell comprising organic and inorganic materials on an inexpensive substrate, such as glass. The materials are deposited on the substrate at low temperatures using eutectics and crystalline buffer layers such as MgO and Al2O3. Such a device can also be used for OLETs (organic light emitting transistors) and OLEDs (organic light emitting diodes) used in displays.
摘要翻译：包括具有预定软化点的基本上非结晶的衬底，沉积在所述衬底上的纹理缓冲层，沉积在所述缓冲层上的聚合物膜以及沉积在所述聚合物膜上的无机或硅无机膜的半导体组件。缓冲层，聚合物膜和无机或硅无机膜各自沉积在低于基底的软化点的各自的沉积温度。公开了一种用于在诸如玻璃的廉价基板上制造包含有机和无机材料的混合太阳能电池的方法。使用共晶体和结晶缓冲层如MgO和Al 2 O 3在低温下将材料沉积在衬底上。这样的器件也可以用于显示器中使用的OLET（有机发光晶体管）和OLED（有机发光二极管）。

13. 发明授权

US09349995B2 Hybrid organic/inorganic eutectic solar cell 有权
标题翻译：混合有机/无机共晶太阳能电池
公开(公告)号：US09349995B2
公开(公告)日：2016-05-24
申请号：US14571800
申请日：2014-12-16
申请人： Ashok Chaudhari
发明人： Ashok Chaudhari
IPC分类号： H01L51/52 , H01L31/0392 , H01L51/00 , H01L51/42
CPC分类号： H01L51/4213 , H01L31/0392 , H01L51/0096 , H01L51/50 , H01L51/5296 , H01L2031/0344 , Y02E10/549
摘要： A method is disclosed for making a hybrid solar cell comprising organic and inorganic materials on an inexpensive substrate, such as glass. The materials are deposited on the substrate at low temperatures using eutectics and crystalline buffer layers such as MgO and Al2O3. Such a device can also be used for OLETs and OLEDs used in displays.
摘要翻译：公开了一种用于在诸如玻璃的廉价基板上制造包含有机和无机材料的混合太阳能电池的方法。使用共晶体和结晶缓冲层如MgO和Al 2 O 3在低温下将材料沉积在衬底上。这种设备也可以用于显示器中使用的OLET和OLED。

14. 发明授权

US09054249B2 Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon 有权
标题翻译：生长异质外延单晶或大晶粒半导体膜及其上的器件的方法
公开(公告)号：US09054249B2
公开(公告)日：2015-06-09
申请号：US12774465
申请日：2010-05-05
申请人： Karin Chaudhari , Ashok Chaudhari , Pia Chaudhari
发明人： Praveen Chaudhari
IPC分类号： C30B25/02 , H01L31/0392 , C30B11/12 , H01L21/02 , C03C17/36 , C23C14/02 , C23C14/18 , C23C14/58 , H01L31/0236 , H01L31/028 , H01L31/0352 , H01L31/068
CPC分类号： H01L31/0392 , C03C17/3618 , C03C17/3636 , C03C17/3649 , C03C17/3668 , C03C17/3678 , C03C2218/15 , C23C14/025 , C23C14/18 , C23C14/5873 , C30B11/12 , C30B25/02 , H01L21/02653 , H01L31/0236 , H01L31/028 , H01L31/035227 , H01L31/035281 , H01L31/03921 , H01L31/068 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521 , Y10T428/24372 , Y10T428/24421
摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.
摘要翻译：公开了从包含金属和半导体的共晶合金制造半导体膜的方法。通过非均相成核，所述膜在相对便宜的缓冲基底（例如玻璃）上以沉积温度沉积。具体地说，所述膜在所述沉积温度下以固定温度气相沉积，其中所述沉积温度高于所述共晶合金的共晶温度，并低于衬底软化的温度。这样的电影可以广泛应用于光伏和显示技术。

15. 发明申请

US20140331915A1 METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON 有权
标题翻译：在玻璃基材上生长异质单晶或大颗粒半导体膜的方法及其设备
公开(公告)号：US20140331915A1
公开(公告)日：2014-11-13
申请号：US14341433
申请日：2014-07-25
申请人： Karin Chauchari , Ashok Chaudhari , Pia Chaudhari
发明人： Praveen Chaudhari , Jifeng Liu
IPC分类号： C30B13/24 , C30B13/34 , C30B29/06 , H01L21/02
CPC分类号： C30B13/24 , C03B29/06 , C30B13/34 , C30B29/06 , C30B29/52 , H01L21/02422 , H01L21/02532 , H01L21/02636 , H01L21/02672 , H01L21/02675 , H01L21/02691 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays
摘要翻译：廉价的半导体通过在廉价的衬底上沉积单晶或大晶粒硅来制造。这些半导体在足够低的温度（例如低于玻璃熔点的温度）下生产。所生产的半导体适用于诸如光电或显示器的半导体器件

16. 发明授权

US10199518B2 Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon 有权
公开(公告)号：US10199518B2
公开(公告)日：2019-02-05
申请号：US15457314
申请日：2017-03-13
申请人： Karin Chaudhari , Ashok Chaudhari , Pia Chaudhari
发明人： Praveen Chaudhari , Ashok Chaudhari
IPC分类号： C30B25/02 , H01L31/0236 , H01L31/0687 , H01L31/18 , H01G9/20 , C30B23/02 , C30B29/52 , C30B19/00 , C30B25/18 , H01L21/02
摘要： A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

17. 发明授权

US10062797B2 Method of making a IV-VI/Silicon thin-film tandem solar cell 有权
公开(公告)号：US10062797B2
公开(公告)日：2018-08-28
申请号：US15213998
申请日：2016-07-19
申请人： Ashok Chaudhari
发明人： Ashok Chaudhari
IPC分类号： H01L31/0725 , H01L31/18 , H01L31/0236 , H01L31/032
CPC分类号： H01L31/0725 , H01L31/02363 , H01L31/02366 , H01L31/0324 , H01L31/0326 , H01L31/0328 , H01L31/18 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A simple manufacturing method is provided for the fabrication of the IV-VI group of semiconductor films on inexpensive substrates for highly efficient tandem or multi junction solar cells and a variety of other electronic devices such as transistors and LEDs. Specifically, the method includes depositing a textured oxide buffer on a substrate; depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a IV-VI compound; and forming a layer on the metal-inorganic film on which an additional element from the IV-VI compound is added, forming a IV-VI layer on a semiconductor device. The films comprising tin sulfides—SnS (tin sulphide), SnS2, and SnS3—are grown on inexpensive substrates, such as glass or flexible plastic, at low temperature, allowing for R2R (roll-to-roll) processing.

18. 发明授权

US09978532B2 Maximizing the power conversion efficiency of a tin perovskite/silicon thin-film tandem solar cell 有权
公开(公告)号：US09978532B2
公开(公告)日：2018-05-22
申请号：US15479388
申请日：2017-04-05
申请人： Ashok Chaudhari
发明人： Ashok Chaudhari
IPC分类号： H01G9/20 , H01L51/42 , H01L51/44
CPC分类号： H01G9/2009 , H01G9/2027 , H01L27/302 , H01L31/043 , H01L31/078 , H01L51/0032 , H01L51/4213 , H01L51/4226 , H01L51/445 , Y02E10/549
摘要： A bi-facial tandem solar cell and a method of making a non-toxic perovskite/inorganic thin-film tandem solar cell stable, having matching bandgaps and a hysteresis free design including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer wherein said perovskite layer is stable, hysteresis-free, and has a bandgap that matches the bandgap of the metal-inorganic.

19. 发明授权

US09818964B2 Method of growing III-V semiconductor films for tandem solar cells 有权
公开(公告)号：US09818964B2
公开(公告)日：2017-11-14
申请号：US15205316
申请日：2016-07-08
申请人： Ashok Chaudhari
发明人： Ashok Chaudhari
IPC分类号： H01L51/42 , H01G9/20 , H01L21/02 , H01L31/0725 , H01L31/028 , H01G9/00 , H01L27/30 , H01L31/0256
CPC分类号： H01L51/4213 , H01G9/0029 , H01G9/2013 , H01G9/2045 , H01G9/209 , H01L21/02422 , H01L21/0254 , H01L21/02543 , H01L27/302 , H01L31/028 , H01L31/0725 , H01L31/1852 , H01L2031/0344 , Y02E10/544 , Y02E10/549
摘要： A method of growing a III-V semiconductor compound film for a semiconductor device including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a III-V compound and forming a layer on the inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.

20. 发明申请

US20170197887A1 METHOD OF ANNEALING CERAMIC GLASS BY LASER 审中-公开
公开(公告)号：US20170197887A1
公开(公告)日：2017-07-13
申请号：US15470161
申请日：2017-03-27
申请人： Ratnakar D. Vispute , Ashok Chaudhari
发明人： Ratnakar D. Vispute , Ashok Chaudhari
IPC分类号： C04B37/04 , C03C17/22
CPC分类号： C04B37/045 , C03C17/3417 , C03C17/3435 , C03C2218/32 , C04B2237/06 , C04B2237/30 , C04B2237/343 , C04B2237/704 , C04B2237/708 , C23C14/024 , C23C14/0641 , C23C14/081 , C23C14/083 , C23C14/10 , C23C14/18 , C23C14/5853 , H01L33/007 , H01L33/22 , H01L51/0096
摘要： A method for annealing thin-films of ceramics such as Al2O3 on glass by laser such that the underlying glass substrate is unaffected by the laser heating. This is accomplished by applying a thin MgO buffer layer to the glass, depositing an amorphous ceramic layer on the textured transparent buffer layer, and annealing the ceramic layer with a heated line source. The ceramic layer crystallizing forming a ceramic coated substrate. The buffer layer is also textured which serves to induce texture in the Al2O3 film deposited on the buffer layer. The induced texture on the Al2O3 provides advantageous properties. The ceramic glass can be used for a variety of applications such as covers to solar panels, CICs used in satellites, displays, automobile windows, and substrates for LEDs.

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