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11. 发明申请

US20130187250A1 Semiconductor Devices Having an Enhanced Absorption Region and Associated Methods 审中-公开
标题翻译：具有增强吸收区域和相关方法的半导体器件
公开(公告)号：US20130187250A1
公开(公告)日：2013-07-25
申请号：US13692628
申请日：2012-12-03
申请人： SiOnyx, Inc.
发明人： James E. Carey , Jason Sickler
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327 , H01L31/0236 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 μm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption region. The electromagnetic radiation absorption layer is operable to absorb greater than or equal to about 40% of incident electromagnetic radiation having at least one wavelength greater than or equal to about 1064 nm.
摘要翻译：提供了感光半导体器件和相关方法。在一个方面，例如，光敏半导体器件可以包括具有小于或等于约200μm厚度的电磁辐射吸收层，其中电磁辐射吸收层包括半导体材料和增强的吸收区域。电磁辐射吸收层可操作以吸收具有大于或等于约1064nm的至少一个波长的入射电磁辐射的大于或等于约40％。

12. 发明申请

US20130168826A1 LASER SYSTEM WITH POLARIZED OBLIQUE INCIDENCE ANGLE AND ASSOCIATED METHODS 审中-公开
标题翻译：激光雷达系统具有偏振角度和相关方法
公开(公告)号：US20130168826A1
公开(公告)日：2013-07-04
申请号：US13633030
申请日：2012-10-01
申请人： SiOnyx, Inc.
发明人： Christopher Vineis
IPC分类号： H01L21/268 , H01L29/06
CPC分类号： H01L21/268 , B23K26/0624 , B23K26/064 , B23K26/355 , B82Y10/00 , H01L29/06 , H01L29/0657 , H01L29/0665 , H01L31/02363 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： Novel laser processed semiconductor materials, systems, and methods associated with the manufacture and use of such materials are provided. In one aspect, for example, a method of processing a semiconductor material can include providing a semiconductor material and irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region. The laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and the laser radiation can be at least substantially p-polarized.
摘要翻译：提供了与这种材料的制造和使用有关的新型激光加工半导体材料，系统和方法。一方面，例如，半导体材料的处理方法可以包括提供半导体材料并用激光束照射半导体材料的目标区域以形成激光处理区域。以相对于半导体材料表面法线的入射角约5°至约89°的角度照射激光辐射，并且激光辐射可以至少基本上是p极化的。

13. 发明申请

US20130062522A1 THREE DIMENSIONAL SENSORS, SYSTEMS, AND ASSOCIATED METHODS 有权
标题翻译：三维传感器，系统和相关方法
公开(公告)号：US20130062522A1
公开(公告)日：2013-03-14
申请号：US13418226
申请日：2012-03-12
申请人： Jutao Jiang , Jeffrey McKee , Homayoon Haddad , Chris Sungkwon Hong
发明人： Jutao Jiang , Jeffrey McKee , Homayoon Haddad , Chris Sungkwon Hong
IPC分类号： G01J5/22 , B82Y15/00
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.
摘要翻译：提供3D传感器，系统和相关方法。在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管靠近所述至少一个可见光光电二极管。该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。

14. 发明申请

US20120292729A1 Optoelectronic Devices Having Deep Level Defects and Associated Methods 审中-公开
标题翻译：具有深层缺陷和相关方法的光电器件
公开(公告)号：US20120292729A1
公开(公告)日：2012-11-22
申请号：US13472325
申请日：2012-05-15
申请人： Christopher Vineis
发明人： Christopher Vineis
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/0236 , H01L31/02363 , H01L31/18 , Y02E10/50
摘要： Semiconductor structures, devices, and methods that can exhibit various enhanced properties, such as, for example, enhanced light detection properties are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material having an enhanced absorption region and a first defect in the enhanced absorption region, where the first defect is a deep-level defect generated by a first defect carrier type that is either a deep-level donor carrier type or a deep-level acceptor carrier type. The device can also include a second defect in the enhanced absorption region, where the second defect is either a shallow-level defect or a deep-level defect, and where the second defect is generated by a second defect carrier type that is opposite to the first defect carrier type. Furthermore, the enhanced absorption region has an external quantum efficiency of at least about 0.5% for electromagnetic radiation wavelengths greater than 1250 nm.
摘要翻译：提供了能够呈现各种增强特性的半导体结构，器件和方法，例如增强的光检测性质。在一个方面，例如，光电子器件可以包括具有增强的吸收区域和增强的吸收区域中的第一缺陷的半导体材料，其中第一缺陷是由第一缺陷载体类型产生的深层缺陷，深层供体载体型或深层受体载体型。该装置还可以包括增强吸收区域中的第二缺陷，其中第二缺陷是浅层缺陷或深层缺陷，并且其中第二缺陷由与第二缺陷相反的第二缺陷载体类型产生第一缺陷载体类型。此外，增强的吸收区域对于大于1250nm的电磁辐射波长具有至少约0.5％的外部量子效率。

15. 发明申请

US20110220971A1 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
标题翻译：感光成像装置及相关方法
公开(公告)号：US20110220971A1
公开(公告)日：2011-09-15
申请号：US13050557
申请日：2011-03-17
申请人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Chintamani Palsule , Leonard Forbes
发明人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Chintamani Palsule , Leonard Forbes
IPC分类号： H01L27/148 , H01L31/0236 , H01L31/0232 , H01L31/18 , H01L31/112
CPC分类号： H01L27/1464 , H01L27/14623 , H01L27/14625 , H01L27/14645 , H01L27/14685
摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
摘要翻译：提供背面照明感光装置及相关方法。在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于在纹理化区域和至少一个结点之间。定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

16. 发明授权

US07745901B1 Highly-depleted laser doped semiconductor volume 有权
标题翻译：高耗尽的激光掺杂半导体体积
公开(公告)号：US07745901B1
公开(公告)日：2010-06-29
申请号：US12362078
申请日：2009-01-29
申请人： Nathaniel J. McCaffrey , James E. Carey
发明人： Nathaniel J. McCaffrey , James E. Carey
IPC分类号： H01L31/07
CPC分类号： H01L31/102 , H01L31/101 , H01L31/108 , H01L31/18
摘要： A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
摘要翻译：公开了使用激光处理半导体作为检测材料的具有增加的光敏性的装置。在一些实施例中，激光处理的半导体可以放置在n型和p型接触或两种肖特基金属之间。 p-n结或肖特基金属结中的场可能有助于消耗激光处理的半导体部分，并且可能能够分离电子空穴对。提出了多种设备配置，包括横向和垂直配置。

17. 发明申请

US20090250780A1 HIGH FILL-FACTOR LASER-TREATED SEMICONDUCTOR DEVICE ON BULK MATERIAL WITH SINGLE SIDE CONTACT SCHEME 审中-公开
标题翻译：具有单面接触方案的高填充材料激光处理半导体器件
公开(公告)号：US20090250780A1
公开(公告)日：2009-10-08
申请号：US12399827
申请日：2009-03-06
申请人： Neal T. Kurfiss
发明人： Neal T. Kurfiss
IPC分类号： H01L31/0352 , H01L31/02
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/1464
摘要： The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side and an architecture that enables the laser step to be the final step or a late step in the fabrication process. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.
摘要翻译：本公开提供了用于配置和构建单个光电检测器或光电检测器阵列的系统和方法，所述光检测器或单独的光纤检测器阵列具有单个侧面上的所有制造电路，以及允许激光步骤成为制造过程中的最后一步或后期步骤的架构。二极管的阳极和阴极触点都放置在一侧，而一层激光处理的半导体放置在相反的一侧，以提高成本效益，光子检测和填充因子。

18. 发明授权

US11929382B2 Shallow trench textured regions and associated methods 有权
公开(公告)号：US11929382B2
公开(公告)日：2024-03-12
申请号：US17369384
申请日：2021-07-07
申请人： SiOnyx, LLC
发明人： Homayoon Haddad , Jutao Jiang
IPC分类号： H01L27/146 , B23K26/352 , B82Y40/00 , H01L31/0232 , H01L31/028 , H01L31/18
CPC分类号： H01L27/14643 , B23K26/355 , B82Y40/00 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14689 , H01L31/02327 , H01L31/028 , H01L31/182
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.

19. 发明申请

US20150372040A1 Pixel Isolation Elements, Devices and Associated Methods 有权
标题翻译：像素隔离元件，器件和相关方法
公开(公告)号：US20150372040A1
公开(公告)日：2015-12-24
申请号：US14747875
申请日：2015-06-23
申请人： SiOnyx, Inc.
发明人： Martin U. Pralle , Jeffrey McKee , Jason Sickler
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14607 , H01L27/1462 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.
摘要翻译：提供了光捕获像素，并入这些像素的装置以及各种相关的方法。在一个方面，例如，光捕获像素装置可以包括具有光入射表面的光敏像素，与光入射表面相对的背面，以及设置在像素的至少一部分中的外围侧壁，至少延伸基本上围绕像素周边。像素还可以包括基本上覆盖背面的背面光捕获材料和基本覆盖周边侧壁的外围光捕获材料。因此，与背面的光捕获材料或周围的光捕获材料接触的光被反射回到像素。

20. 发明申请

US20140313386A1 HIGH DYNAMIC RANGE CMOS IMAGE SENSOR HAVING ANTI-BLOOMING PROPERTIES AND ASSOCIATED METHODS 有权
标题翻译：高动态范围CMOS图像传感器，具有抗真空性能和相关方法
公开(公告)号：US20140313386A1
公开(公告)日：2014-10-23
申请号：US14183338
申请日：2014-02-18
申请人： SiOnyx, Inc.
发明人： Jutao Jiang , Matt Borg
IPC分类号： H04N5/374
CPC分类号： H04N5/374 , H01L27/14654 , H04N5/35581 , H04N5/3591
摘要： A method of providing blooming protection to a CMOS imager having a pixel array of a plurality of pixels arranged in rows and columns, where the CMOS imager is operable to capture high dynamic range images using a rolling shutter, is provided. Such a method can include reading out charge accumulated by the pixels in a readout row of a first integration time, applying a reset to the readout row for a reset time sufficient to allow readout and reset to occur in at least one subsequent row, and starting a second integration time of the pixels in the readout row, wherein the second integration time is shorter than the first integration time, and wherein the at least one subsequent row is a sufficient number of rows to have a combined reset to preclude blooming effects from the pixel array during the second integration time.
摘要翻译：提供了一种对具有排列成行和列的多个像素的像素阵列的CMOS成像器提供防晕保护的方法，其中CMOS成像器可操作以使用滚动快门捕获高动态范围图像。这种方法可以包括读出由第一积分时间的读出行中的像素积累的电荷，向读出行施加一个复位时间的复位时间，足以允许在至少一个后续行中发生读出和复位，并且启动所述读出行中的所述像素的第二积分时间，其中所述第二积分时间比所述第一积分时间短，并且其中所述至少一个后续行是足够数量的行以具有组合复位以排除来自所述第一积分时间像素阵列在第二个积分时间。

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