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11. 发明申请

US20220376136A1 LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20220376136A1
公开(公告)日：2022-11-24
申请号：US17879526
申请日：2022-08-02
申请人： EPISTAR CORPORATION
发明人： Chien-Hua CHOU , Tai-Chun WANG , Chih-Tsung SU , Biau-Dar CHEN
IPC分类号： H01L33/38 , H01L33/14
摘要： A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.

12. 发明申请

US20220367563A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220367563A1
公开(公告)日：2022-11-17
申请号：US17877550
申请日：2022-07-29
申请人： EPISTAR CORPORATION
发明人： Cheng-Yu CHEN , Hui-Chun YEH , Chien-Fu SHEN
IPC分类号： H01L27/15 , H01L33/38
摘要： A method for manufacturing a light-emitting device, includes: forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layer, a second semiconductor layer and an active region formed therebetween; removing portions of the semiconductor stack to form a plurality of mesas and exposing a part of the first semiconductor layer, wherein the part of the first semiconductor layer includes a first portion and a second portion; forming a plurality of trenches by removing the first portion of the part of the first semiconductor to exposing a top surface of the substrate and a side wall of the first semiconductor, wherein the plurality of trenches defining a plurality of light-emitting units in the semiconductor stack; wherein in a top view, the plurality of trenches includes a first trench extending along a first direction and a second trench extending along a second direction not parallel with the first trench; and wherein the second trench includes an end; forming connection electrodes on the semiconductor stack to electrically connect the adjacent light-emitting units; and separating the substrate and the second portion of the part of the first semiconductor layer along a first dicing line not parallel with the second direction; wherein the first dicing line intersects the end of the second trench.

13. 发明申请

US20220302346A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR COMPONENT AND DISPLAY PANEL INCLUDING THE SAME 有权
公开(公告)号：US20220302346A1
公开(公告)日：2022-09-22
申请号：US17203293
申请日：2021-03-16
申请人： EPISTAR CORPORATION
发明人： Min-Hsun HSIEH , Yu-Tsu LEE , Wei-Jen HSUEH
IPC分类号： H01L33/30 , H01L27/15 , H01L33/62 , H01L33/00
摘要： A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a p-type or n-type layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The p-type or n-type layer includes an oxygen element (O) and a metal element, and is located on the second portion. The first metal element-containing structure is located on the p-type or n-type layer. The p-type or n-type layer physically contacts the first metal element-containing structure and the first semiconductor layer.

14. 发明授权

US11450639B2 Semiconductor device and a method of manufacturing thereof 有权
公开(公告)号：US11450639B2
公开(公告)日：2022-09-20
申请号：US17163746
申请日：2021-02-01
申请人： EPISTAR CORPORATION
发明人： Shih-An Liao , Shau-Yi Chen , Ming-Chi Hsu , Chun-Hung Liu , Min-Hsun Hsieh
IPC分类号： H01L23/48 , H01L23/00 , H01L33/62 , H01L33/30 , H01L33/64
摘要： A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

15. 发明授权

US11437547B2 Electrode structure of light emitting device 有权
公开(公告)号：US11437547B2
公开(公告)日：2022-09-06
申请号：US17102171
申请日：2020-11-23
申请人： EPISTAR CORPORATION
发明人： De-Shan Kuo , Ting-Chia Ko , Chun-Hsiang Tu , Po-Shun Chiu
IPC分类号： H01L29/06 , H01L33/42 , H01L33/40 , H01L27/15 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/60 , H01L33/62 , H01L33/22 , H01L33/00
摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

16. 发明授权

US11437427B2 Light-emitting device and manufacturing method thereof 有权
公开(公告)号：US11437427B2
公开(公告)日：2022-09-06
申请号：US16750227
申请日：2020-01-23
申请人： EPISTAR CORPORATION
发明人： Po-Shun Chiu , Tsung-Hsun Chiang , Liang-Sheng Chi , Jing Jiang , Jie Chen , Tzung-Shiun Yeh , Hsin-Ying Wang , Hui-Chun Yeh , Chien-Fu Shen
IPC分类号： H01L27/15 , H01L33/36 , F21K9/00 , H01L33/62
摘要： A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

17. 发明授权

US11430925B2 Light-emitting device having package structure with quantum dot material and manufacturing method thereof 有权
公开(公告)号：US11430925B2
公开(公告)日：2022-08-30
申请号：US17060772
申请日：2020-10-01
申请人： EPISTAR CORPORATION
发明人： Min-Hsun Hsieh , Tsung-Hong Lu
IPC分类号： H01L33/50 , H01L33/60 , H01L33/62
摘要： A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface.

18. 发明授权

US11430916B2 Light-emitting device 有权
公开(公告)号：US11430916B2
公开(公告)日：2022-08-30
申请号：US17087310
申请日：2020-11-02
申请人： EPISTAR CORPORATION
发明人： Chien-Hua Chou , Tai-Chun Wang , Chih-Tsung Su , Biau-Dar Chen
IPC分类号： H01L33/00 , H01L33/38 , H01L33/14
摘要： A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.

19. 发明授权

US11423830B2 Display apparatus with array of light emitting diodes and method of manufacturing the same 有权
公开(公告)号：US11423830B2
公开(公告)日：2022-08-23
申请号：US17233777
申请日：2021-04-19
申请人： EPISTAR CORPORATION
发明人： Min-Hsun Hsieh
IPC分类号： H01L21/00 , G09G3/32 , H01L21/02 , H01L33/38
摘要： A display includes a substrate with a plurality of electronic control elements, an array of light-emitting diodes having a semiconductor layer, a plurality of light emitting units disposed on the semiconductor layer, and a plurality of first electrodes disposed on the semiconductor layer, an bonding layer disposed between the substrate and the array of light-emitting diodes, and a plurality of wavelength conversion elements disposed on the semiconductor layer and spaced apart from each other. The plurality of wavelength conversion elements and the plurality of light emitting units are disposed at different sides of the semiconductor layer. The plurality of wavelength conversion elements is arranged in positions corresponding to the plurality of light-emitting units.

20. 发明申请

US20220262849A1 OPTOELECTRONIC DEVICE 有权
公开(公告)号：US20220262849A1
公开(公告)日：2022-08-18
申请号：US17733262
申请日：2022-04-29
申请人： EPISTAR CORPORATION
发明人： Chao Hsing CHEN , Jia Kuen WANG , Chien Fu SHEN , Chun Teng KO
IPC分类号： H01L27/15 , H01L33/64 , H01L33/50 , H01L33/60 , H01L33/48 , H01L33/62 , H01L25/075
摘要： An optoelectronic device comprises an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a trench exposing a portion of the first semiconductor layer; a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer; a first electrode formed on the trench; a second electrode formed on the second semiconductor layer; a supporting device covering the epitaxial stack; an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes; a fifth electrode electrically connected with the first electrode; and a sixth electrode electrically connected with the second electrode, wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer that of an edge of the epitaxial stack.

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