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11. 发明申请

US20210167284A1 CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY DEVICES BASED ON NANOTUBE CHALCOGENIDE GLASS STRUCTURES 有权
公开(公告)号：US20210167284A1
公开(公告)日：2021-06-03
申请号：US17111377
申请日：2020-12-03
申请人： BOISE STATE UNIVERSITY
发明人： Maria Mitkova , Muhammad Rizwan Latif
IPC分类号： H01L45/00 , H01L27/24
摘要： A memory cell may include an active electrode, an inert electrode, and a dielectric positioned between them. A forward electrical bias between the electrodes may result in the formation of a conductive bridge between them. A reverse electrical bias may result in the dissolution of the conductive bridge. The memory cell may include nanotube structures formed within the dielectric, where the nanotube structures define columns between the active electrode and the inert electrode. A memory device may include multiple such conductive bridge memory cells. A method of forming a memory cell may include positioning an active electrode onto a substrate, positioning a dielectric layer onto the active electrode, forming nanotube structures within the dielectric layer while positioning the dielectric layer, where the nanotube structures define columns within the dielectric layer, and positioning an inert electrode onto the dielectric layer.

12. 发明申请

US20210017408A1 AQUEOUS BASED NANOPARTICLE INK 有权
公开(公告)号：US20210017408A1
公开(公告)日：2021-01-21
申请号：US16930244
申请日：2020-07-15
申请人： BOISE STATE UNIVERSITY
发明人： Kiyo Fujimoto , David Estrada , Harish Subbaraman
IPC分类号： C09D11/037 , C09D11/033 , C09D11/52 , H05K3/12 , B41J2/015 , C01B32/182 , C01B32/921
摘要： Water-based nanoparticle inks may be formulated to be compatible with printed electronic direct-write methods. The water-based nanoparticle inks may include a functional material (nanoparticle) in combination with an appropriate solvent system. A method may include dispersing nanoparticles in a solvent and printing a circuit in an aerosol jet process or plasma jet process.

13. 发明授权

US10700226B2 Optically activated transistor, switch, and photodiode 有权
公开(公告)号：US10700226B2
公开(公告)日：2020-06-30
申请号：US15990067
申请日：2018-05-25
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L31/043 , H01L31/032 , H01L31/0224 , C23C14/06 , C23C14/34 , H01L31/109
摘要： An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

14. 发明授权

US10383933B2 Cholera toxin chimera and its use as a staph vaccine 有权
公开(公告)号：US10383933B2
公开(公告)日：2019-08-20
申请号：US15910783
申请日：2018-03-02
申请人： BOISE STATE UNIVERSITY
发明人： Juliette Tinker
IPC分类号： A61K39/085 , A61K39/02 , C07K14/31 , C07K14/28 , A61K39/00 , C07K14/315
摘要： The present invention relates to chimeric protein vaccines and methods of use thereof in the treatment of Staphylococcus aureus. One embodiment of the present invention provides a method of generating an immune response in a mammal, that includes administering to the mammal, a composition having a chimeric protein having at least one of: a portion of a cholera toxin, a portion of a heat-labile toxin, and a portion of a shiga toxin; and an antigen having at least one of: an antigenic material from S. aureus and an antigenic material from a S. aureus-specific polypeptide.

15. 发明申请

US20170196973A1 ONCOSTATIN M (OSM) ANTAGONISTS FOR PREVENTING CANCER METASTASIS AND IL-6 RELATED DISORDERS 审中-公开
公开(公告)号：US20170196973A1
公开(公告)日：2017-07-13
申请号：US15403965
申请日：2017-01-11
申请人： Cheryl Jorcyk , Dong Xu
发明人： Cheryl Jorcyk , Dong Xu
IPC分类号： A61K39/395 , A61K31/4025 , A61K45/06 , A61K31/165 , A61K31/473 , A61K31/404 , A61K31/4184 , A61K31/53 , A61K31/513 , A61K31/36 , C07K16/24 , A61K31/522
CPC分类号： A61K39/3955 , A61K31/165 , A61K31/36 , A61K31/4025 , A61K31/404 , A61K31/4178 , A61K31/4184 , A61K31/427 , A61K31/473 , A61K31/513 , A61K31/522 , A61K31/53 , A61K45/06 , A61K2039/505 , C07K16/248 , C07K2317/76 , A61K2300/00
摘要： A method of treating cancer or metastasis is provided involving administering at least one oncostatin M (OSM) antagonist to a subject, wherein the subject has been diagnosed with cancer. Administration of an OSM antagonist such as a small molecule pharmaceutical is provided as well as an anti-OSM antibody, an anti-OSM aptamer, and anOSM mRNA antagonist. The OSM antagonists were found to inhibit or prevent tumor cell detachment, proliferation and metastasis in several cancer types.

16. 发明授权

US09091251B1 Actuation method and apparatus, micropump, and PCR enhancement method 有权
标题翻译：激活方法和装置，微型泵和PCR增强方法
公开(公告)号：US09091251B1
公开(公告)日：2015-07-28
申请号：US13550386
申请日：2012-07-16
申请人： Kari Ullakko , Peter Mullner , Greg Hampikian , Aaron Smith
发明人： Kari Ullakko , Peter Mullner , Greg Hampikian , Aaron Smith
IPC分类号： G01N21/75 , F03G7/06 , F04B17/00
CPC分类号： F03G7/065 , F03G7/005 , F04B19/006 , G01N21/75
摘要： An actuation apparatus includes at least one magnetic shape memory (MSM) element containing a material configured to expand and/or contract in response to exposure to a magnetic field. Among other things, the MSM element may be configured to pump fluid through a micropump by expanding and/or contracting in response to the magnetic field. The magnetic field may rotate about an axis of rotation and exhibit a distribution having a component substantially perpendicular to the axis of rotation. Further, the magnetic field distribution may include at least two components substantially orthogonal to one another lying in one or more planes perpendicular to the axis of rotation. The at least one MSM element may contain nickel, manganese, and gallium. A polymerase chain reaction (PCR) may be enhanced by contacting a PCR reagent and DNA material with the MSM element.
摘要翻译：致动装置包括至少一个磁形状存储器（MSM）元件，其包含被配置为响应于暴露于磁场而膨胀和/或收缩的材料。除此之外，MSM元件可以被配置成通过响应于磁场的膨胀和/或收缩来泵送流体通过微型泵。磁场可以围绕旋转轴线旋转并且具有基本上垂直于旋转轴线的分量的分布。此外，磁场分布可以包括在垂直于旋转轴线的一个或多个平面中彼此基本上正交的至少两个分量。至少一个MSM元件可以包含镍，锰和镓。聚合酶链反应（PCR）可以通过使PCR试剂和DNA材料与MSM元件接触来增强。

17. 发明申请

US20150093391A1 ONCOSTATIN M (OSM) ANTAGONISTS FOR PREVENTING CANCER METASTASIS AND IL-6 RELATED DISORDERS 有权
标题翻译： ONCOSTATIN M（OSM）用于预防癌症METASTASIS和IL-6相关疾病的拮抗剂
公开(公告)号：US20150093391A1
公开(公告)日：2015-04-02
申请号：US14478175
申请日：2014-09-05
申请人： Cheryl Jorcyk , Dong Xu
发明人： Cheryl Jorcyk , Dong Xu
IPC分类号： C07K16/24 , A61K45/06 , A61K39/395 , A61K31/165 , A61K31/513 , A61K31/404 , A61K31/4025 , A61K31/4184 , A61K31/53 , A61K31/4178 , A61K31/522
CPC分类号： A61K39/3955 , A61K31/165 , A61K31/36 , A61K31/4025 , A61K31/404 , A61K31/4178 , A61K31/4184 , A61K31/427 , A61K31/473 , A61K31/513 , A61K31/522 , A61K31/53 , A61K45/06 , A61K2039/505 , C07K16/248 , C07K2317/76 , A61K2300/00
摘要： A method of treating cancer or metastasis is provided involving administering at least one oncostatin M (OSM) antagonist to a subject, wherein the subject has been diagnosed with cancer. Administration of an OSM antagonist such as a small molecule pharmaceutical is provided as well as an anti-OSM antibody, an anti-OSM aptamer, and an OSM mRNA antagonist. The OSM antagonists were found to inhibit or prevent tumor cell detachment, proliferation and metastasis in several cancer types.
摘要翻译：提供了一种治疗癌症或转移的方法，包括对受试者施用至少一种制瘤素M（OSM）拮抗剂，其中受试者被诊断患有癌症。提供OSM拮抗剂如小分子药物的给药以及抗OSM抗体，抗OSM适体和OSM mRNA拮抗剂。发现OSM拮抗剂在几种癌症类型中抑制或预防肿瘤细胞分离，增殖和转移。

18. 发明授权

US08467236B2 Continuously variable resistor 有权
标题翻译：连续可变电阻
公开(公告)号：US08467236B2
公开(公告)日：2013-06-18
申请号：US12909760
申请日：2010-10-21
申请人： Kristy A. Campbell
发明人： Kristy A. Campbell
IPC分类号： G11C11/00
CPC分类号： G11C11/5614 , G11C11/5678 , G11C13/0004 , G11C13/0011 , G11C13/0069 , G11C27/005 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2013/009 , G11C2211/5614 , G11C2213/56
摘要： A continuously variable resistor is disclosed. The continuously variable resistor may comprise a first chalcogenide layer and a second chalcogenide layer. The second chalcogenide layers may be connected to the first chalcogenide layer and may have a metal interspersed within it. The second chalcogenide layer may be metal-rich, in a state of solid solution with the interspersed metal. The continuously variable resistor may be configured to exhibit NDR behavior. The continuously variable resistor may be configured to have three or more substantially non-volatile resistance states.
摘要翻译：公开了一种连续可变电阻器。连续可变电阻器可以包括第一硫族化物层和第二硫族化物层。第二硫族化物层可以连接到第一硫族化物层并且可以具有散布在其内的金属。第二硫族化物层可以是富金属的，处于与散在的金属的固溶体状态。连续可变电阻器可以被配置为展现NDR行为。连续可变电阻器可以被配置为具有三个或更多个基本上非易失性的电阻状态。

19. 发明申请

US20130119336A1 Forced Ion Migration for Chalcogenide Phase Change Memory Device 有权
标题翻译：硫族化物相变存储器件的强制离子迁移
公开(公告)号：US20130119336A1
公开(公告)日：2013-05-16
申请号：US13657495
申请日：2012-10-22
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1641 , H01L45/1683 , Y10S977/754
摘要： Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus “activating” the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
摘要翻译：已经研究了包括有源存储器件的具有两层叠层的硫族化物材料的非易失性存储器件作为相变存储器的潜力。测试的器件包括GeTe / SnTe，Ge2Se3 / SnTe和Ge2Se3 / SnSe堆叠。所有器件表现出电阻切换行为。由于电场引起的Sn或Te向Ge-硫族化物层的移动，相对于SnTe或SnSe层的施加电压的极性对于存储器开关特性至关重要。本发明的一个实施方案是包含含硫族化物的层的堆叠的装置，其仅在反向极性电压电位施加到堆叠之后才显示相变开关，导致离子移动到相邻层中并且因此“激活”该装置以起作用当施加的电压电位恢复到正常极性时，作为相变随机存取存储器件或可重新配置的电子器件。本发明的另一实施例是能够呈现多于两个数据状态的装置。

20. 发明申请

US20130091954A1 SENSOR DEVICE 有权
标题翻译：传感器设备
公开(公告)号：US20130091954A1
公开(公告)日：2013-04-18
申请号：US13652293
申请日：2012-10-15
申请人： BOISE STATE UNIVERSITY
发明人： Kari Ullakko , Kotaro Sasaki , Peter Müllner
IPC分类号： G01L1/12 , H01R43/00
CPC分类号： G01L1/127 , G01L1/125 , Y10T29/49117
摘要： An apparatus for sensing strain or stress includes a body including magnetic shape-memory alloy (MSMA) material, having a first axis. A first drive coil and first sensor coil are wound around the body about the first axis. The drive coil is coupled to a power source and configured to generate an alternating magnetic field on the body. The first sensor coil is configured to detect changes in inductance of the body due to changes in magnetic permeability of the body with deformation thereof.
摘要翻译：用于感测应变或应力的装置包括具有第一轴线的包括磁性形状记忆合金（MSMA）材料的主体。第一驱动线圈和第一传感器线圈围绕第一轴缠绕在主体上。驱动线圈耦合到电源并被配置为在主体上产生交变磁场。第一传感器线圈被配置为检测由于身体的变形导致的身体的电感的变化。

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