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    • 188. 发明授权
    • Process for forming deposited film
    • 沉积膜形成工艺
    • US5439844A
    • 1995-08-08
    • US60508
    • 1993-05-12
    • Akira Sakai
    • Akira Sakai
    • C23C16/24C23C16/452H01L21/205C30B29/12
    • H01L21/02532C23C16/24C23C16/452H01L21/02406H01L21/02576H01L21/02579H01L21/02609H01L21/0262
    • A process for forming a deposited film comprises the steps:(a) arranging a substrate having crystal orientability uniformly on its surface in a film forming space for formation of a deposited film;(b) introducing into said film forming space an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other, thus permitting both the species to react chemically with each other thereby to form a deposited film on the above substrate; and(c) introducing into said film forming space a gaseous substance (E) having etching action on said deposited film to be formed or a gaseous substance (E2) forming said gaseous substance (E) during the above film formation step (b), thus exposing the surface for deposited film growth to said gaseous substance (E) and thereby effecting an etching action to conduct crystal growth preferentially in a specific face direction.
    • 一种形成沉积膜的方法包括以下步骤:(a)在其形成用于形成沉积膜的成膜空间中的表面上均匀地布置具有晶体取向性的基板; (b)向所述成膜空间引入由含有硅和卤素的化合物(SX)分解形成的活化物质(A)和由用于成膜的化学物质(B))形成的活化物质(B) 与所述活化物质(A)相互反应,从而允许物质彼此化学反应,从而在上述基材上形成沉积膜; 和(c)在上述成膜步骤(b)中向所述成膜空间引入对所形成的沉积膜上具有蚀刻作用的气态物质(E)或形成所述气态物质(E)的气态物质(E2) 从而将用于沉积膜生长的表面暴露于所述气态物质(E),从而进行蚀刻作用以优先在特定的面方向进行晶体生长。