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141. 发明授权

US08247791B2 Compound semiconductor light emitting element, illuminating apparatus using compound semiconductor light emitting element, and method for manufacturing compound semiconductor light emitting element 有权
标题翻译：化合物半导体发光元件，使用化合物半导体发光元件的照明装置，以及化合物半导体发光元件的制造方法
公开(公告)号：US08247791B2
公开(公告)日：2012-08-21
申请号：US12993509
申请日：2009-05-25
申请人： Robert David Armitage
发明人： Robert David Armitage
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/20 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/08 , H01L33/18
摘要： A compound semiconductor light emitting element is provided with a substrate which is provided on a side of one electrode; a plurality of columnar crystal structures of nanometer scale extending in a vertical direction on the substrate; and another electrode which interconnects top portions of the plurality of columnar crystal structures. On the substrate are provided a first region, and a second region having a step between the first region and the second region and having a substrate thickness greater than that in the first region; a porous first mask layer is formed on the surface of the first region on the substrate; and the plurality of columnar crystal structures are formed by sequentially layering an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, in the first and second regions on the substrate.
摘要翻译：化合物半导体发光元件设置有设置在一个电极的一侧的基板; 在基板上沿垂直方向延伸的多个纳米尺度的柱状晶体结构; 以及互连多个柱状晶体结构的顶部的另一个电极。在基板上设置有第一区域和第二区域，该第二区域在第一区域和第二区域之间具有大于第一区域的基板厚度的台阶; 在基板上的第一区域的表面上形成多孔的第一掩模层; 并且通过在衬底的第一和第二区域中依次层叠n型半导体层，发光层和p型半导体层来形成多个柱状晶体结构。

142. 发明授权

US08211724B2 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same 有权
标题翻译：具有多个非极性发光单元的发光器件及其制造方法
公开(公告)号：US08211724B2
公开(公告)日：2012-07-03
申请号：US12623990
申请日：2009-11-23
申请人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

143. 发明申请

US20120132888A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120132888A1
公开(公告)日：2012-05-31
申请号：US13304814
申请日：2011-11-28
申请人： Woo Chul KWAK , Soon Ho AN , Hwa Mok KIM , Eun Jin KIM , Jae Hoon SONG
发明人： Woo Chul KWAK , Soon Ho AN , Hwa Mok KIM , Eun Jin KIM , Jae Hoon SONG
IPC分类号： H01L33/04 , H01L29/06 , B82Y99/00
CPC分类号： H01L33/08 , B82Y20/00 , B82Y30/00 , H01L33/18 , H01L33/38 , H01L33/502 , H01L2933/0091
摘要： A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.
摘要翻译：发光器件包括金属背衬层，设置在金属背衬层上的反射电极层和设置在反射电极层上的多个纳米棒。每个纳米棒包括依次堆叠在反射电极层上的p半导体层，有源层和n半导体层。发光装置还包括设置在纳米棒上的抗反射电极层和设置在纳米棒之间的量子点。该方法包括在衬底上依次生长n半导体层，有源层和p半导体层; 通过使用掩模图案蚀刻p半导体层来形成纳米棒; 在p-半导体层上依次形成反射电极层和金属背衬层，然后去除衬底; 在纳米棒之间设置量子点; 并在纳米棒上形成抗反射电极层。

144. 发明申请

US20120104412A1 HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING 有权
标题翻译：通过表面粗化的高光提取效率的基于氮化物的发光二极管
公开(公告)号：US20120104412A1
公开(公告)日：2012-05-03
申请号：US13349342
申请日：2012-01-12
申请人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/32 , H01L33/58
CPC分类号： H01L33/22 , H01L21/02433 , H01L21/02458 , H01L33/0075 , H01L33/10 , H01L33/18 , H01L33/20 , H01L33/32 , H01L2933/0083
摘要： A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
摘要翻译： III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光萃取。纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

145. 发明申请

US20120104358A1 SEMICONDUCTOR CHIP CARRIERS WITH MONOLITHICALLY INTEGRATED QUANTUM DOT DEVICES AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：具有单一集成量子点设备的半导体芯片载体及其制造方法
公开(公告)号：US20120104358A1
公开(公告)日：2012-05-03
申请号：US13288922
申请日：2011-11-03
申请人： L. Pierre de Rochemont
发明人： L. Pierre de Rochemont
IPC分类号： H01L29/15 , H01L21/208 , B82Y99/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y40/00 , H01L21/02521 , H01L21/02532 , H01L21/02535 , H01L21/02592 , H01L21/02628 , H01L21/02672 , H01L29/04 , H01L29/0665 , H01L29/151 , H01L29/16 , H01L29/7395 , H01L29/78 , H01L33/06 , H01L33/18 , H01L33/34
摘要： A three-dimensional polycrystalline semiconductor material provides a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm, and a minor ingredient forming boundaries between the individual crystalline grains.
摘要翻译：三维多晶半导体材料提供形成具有小于或等于50nm的标称最大粒径的单个结晶颗粒的主要成分，以及在单个晶粒之间形成边界的次要成分。

146. 发明申请

US20120080659A1 NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化物的半导体光学器件，用于基于氮化物的半导体光学器件的外延晶体管，以及制造半导体发光器件的方法
公开(公告)号：US20120080659A1
公开(公告)日：2012-04-05
申请号：US13279005
申请日：2011-10-21
申请人： Masaki UENO , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki UENO , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer.
摘要翻译：在基于氮化物的半导体光学器件中，应变阱层沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面延伸。氮化镓基半导体层与具有负的压电场的发光层相邻，并且具有比阻挡层的带隙大的带隙。阱层中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层中的压电场沿着从p型层的方向到n型层。因此，价带，而不是导带，在发光层和氮化镓基半导体层之间的界面处有下沉。

147. 发明授权

US08138493B2 Optoelectronic semiconductor device 有权
标题翻译：光电半导体器件
公开(公告)号：US08138493B2
公开(公告)日：2012-03-20
申请号：US12499491
申请日：2009-07-08
申请人： Jonas Ohlsson , Lars Samuelson
发明人： Jonas Ohlsson , Lars Samuelson
IPC分类号： H01L33/00
CPC分类号： H01L31/03529 , B82Y20/00 , H01L31/035236 , H01L33/06 , H01L33/18 , H01L33/32 , H01S5/341 , H01S5/3412 , H01S5/34333 , Y02E10/50
摘要： The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer arranged around at least a portion of the nanowire core. The nanowire core and the shell layer form a pn or pin junction that in operation provides an active region for carrier generation or carrier recombination. Quantum dots adapted to act as carrier recombination centres or carrier generation centres are arranged in the active region. By using the nanowire core as template for formation of the quantum dots and the shell layer, quantum dots of homogeneous size and uniform distribution can be obtained. Basically, the optoelectronic semiconductor device can be used for light generation or light absorption. In the former case the optoelectronic semiconductor device is a light emitting diode or a laser diode and in the latter case the optoelectronic semiconductor device is a photoelectric device, such as a photo diode, a photo detector or a solar cell.
摘要翻译：本发明提供一种包括至少一个半导体纳米线的光电子半导体器件，其中纳米线包括纳米线芯和至少一个围绕纳米线芯的至少一部分布置的壳层。纳米线芯和壳层形成pn或pin结，其在操作中提供用于载流子产生或载流子复合的有源区。适于作为载体复合中心或载体生成中心的量子点被布置在有源区中。通过使用纳米线芯作为形成量子点和壳层的模板，可以获得均匀尺寸和均匀分布的量子点。基本上，光电子半导体器件可用于发光或光吸收。在前一种情况下，光电子半导体器件是发光二极管或激光二极管，在后一种情况下，光电子半导体器件是光电器件，例如光电二极管，光电检测器或太阳能电池。

148. 发明申请

US20110312163A1 Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor 有权
标题翻译：大面积纳米电子基板及其用途
公开(公告)号：US20110312163A1
公开(公告)日：2011-12-22
申请号：US13218286
申请日：2011-08-25
申请人： Linda T. Romano , Jian Chen
发明人： Linda T. Romano , Jian Chen
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L29/78696 , B82Y10/00 , B82Y25/00 , H01F1/0072 , H01L27/1214 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/08 , H01L33/18 , H01L35/26 , H01L35/32 , H01L41/082 , H01L41/18 , H01L41/316 , H01L51/0012 , H01L51/0048 , H01L51/0504 , H01L51/0508 , H01L51/0545 , H01L51/0595 , Y02E10/549
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译：描述了具有多个半导体器件的电子基片的方法和装置。在衬底上形成纳米线薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

149. 发明申请

US20110309354A1 Large-scale Fabrication of Vertically Aligned ZnO Nanowire Arrays 有权
标题翻译：垂直对准的ZnO纳米线阵列的大规模制造
公开(公告)号：US20110309354A1
公开(公告)日：2011-12-22
申请号：US13091855
申请日：2011-04-21
申请人： Zhong L. Wang , Suman Das , Sheng Xu , Dajun Yuan , Rui Guo , Yaguang Wei , Wenzhuo Wu
发明人： Zhong L. Wang , Suman Das , Sheng Xu , Dajun Yuan , Rui Guo , Yaguang Wei , Wenzhuo Wu
IPC分类号： H01L33/26 , H01L33/04 , H01L21/36 , B82Y40/00
CPC分类号： H01L21/02472 , B82Y10/00 , B82Y40/00 , H01L21/02494 , H01L21/02554 , H01L21/02603 , H01L21/02639 , H01L33/0087 , H01L33/08 , H01L33/18 , H01L33/28
摘要： In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.
摘要翻译：在用于生长纳米线阵列的方法中，将光致抗蚀剂层置于配置用于从其生长纳米线的纳米线生长层上。光致抗蚀剂层暴露于相干光干涉图案，其包括周期性交替间隔的暗带和沿第一取向的光带。光致抗蚀剂层沿着与第一取向垂直的第二取向暴露于相干光干涉图案。光致抗蚀剂层被显影，以沿着第一取向和干涉图案的暗带沿着第二取向从对应于干涉图案的暗带的区域的区域移除光致抗蚀剂，从而留下穿过的有序阵列的孔光刻胶层。将光致抗蚀剂层和纳米线生长层放置在纳米线生长环境中，从而从纳米线生长层通过孔阵列生长纳米线。

150. 发明授权

US08080468B2 Methods for fabricating passivated silicon nanowires and devices thus obtained 有权
标题翻译：制备钝化硅纳米线的方法和由此获得的器件
公开(公告)号：US08080468B2
公开(公告)日：2011-12-20
申请号：US12822109
申请日：2010-06-23
申请人： Axel Scherer , Sameer Walavalkar , Michael D. Henry , Andrew P. Homyk
发明人： Axel Scherer , Sameer Walavalkar , Michael D. Henry , Andrew P. Homyk
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y40/00 , H01L29/0676 , H01L29/413 , H01L29/66439 , H01L29/66666 , H01L29/775 , H01L29/7827 , H01L33/18 , Y10S977/762
摘要： Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.
摘要翻译：描述了制造钝化硅纳米线的方法和由此获得的电子布置。这种布置可以包括金属氧化物半导体（MOS）结构，使得这些布置可以用于MOS场效应晶体管（MOSFET）或光电开关。

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