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141. 发明申请

US20090081844A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体衬底和半导体器件的方法
公开(公告)号：US20090081844A1
公开(公告)日：2009-03-26
申请号：US12211933
申请日：2008-09-17
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L21/3065 , H01L21/76254 , H01L21/84 , H01L29/66772
摘要： A plurality of single crystal semiconductor substrates are arranged and then the plurality of single crystal semiconductor substrates which have been arranged are overlapped with a base substrate, so that the base substrate and the plurality of single crystal semiconductor substrates are bonded to each other. Then, each of the plurality of single crystal semiconductor substrates is separated to form a plurality of single crystal semiconductor layers over the base substrate. Next, in order to reduce crystal defects in the plurality of single crystal semiconductor layers, the plurality of single crystal semiconductor layers are irradiated with a laser beam. The plurality of single crystal semiconductor layers are thinned by being etched before or after irradiation with a laser beam.
摘要翻译：布置多个单晶半导体基板，然后将已布置的多个单晶半导体基板与基底基板重叠，使得基底基板和多个单晶半导体基板彼此接合。然后，分离多个单晶半导体衬底中的每一个以在基底衬底上形成多个单晶半导体层。接下来，为了减少多个单晶半导体层中的晶体缺陷，用激光束照射多个单晶半导体层。多个单晶半导体层通过在用激光束照射之前或之后被蚀刻而变薄。

142. 发明申请

US20090079000A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090079000A1
公开(公告)日：2009-03-26
申请号：US12209739
申请日：2008-09-12
申请人： Shunpei YAMAZAKI , Atsuo ISOBE , Hiromichi GODO , Yutaka OKAZAKI
发明人： Shunpei YAMAZAKI , Atsuo ISOBE , Hiromichi GODO , Yutaka OKAZAKI
IPC分类号： H01L27/08
CPC分类号： H01L27/1266 , H01L21/823807 , H01L21/823871 , H01L23/433 , H01L23/481 , H01L23/552 , H01L27/0688 , H01L27/1214 , H01L27/1229 , H01L29/7843 , H01L2224/16 , H01L2224/73253 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/16152 , H01L2924/16195
摘要： An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.
摘要翻译：目的是在具有SOI结构的半导体器件中实现高性能和低功耗。此外，另一个目的是提供一种具有更高集成度的高性能半导体元件的半导体器件。半导体器件使得多个n沟道场效应晶体管和p沟道场效应晶体管层叠在其间具有绝缘表面的衬底之间的层间绝缘层。通过控制由于具有应力的绝缘膜，半导体层的平面取向和沟道长度方向的晶轴引起的半导体层的失真，n沟道场效应晶体管和可以减小p沟道场效应晶体管，由此n沟道场效应晶体管的电流驱动能力和响应速度与p沟道场效应相当。

143. 发明申请

US20090078938A1 ELECTROPHORETIC DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：电泳显示装置及其制造方法
公开(公告)号：US20090078938A1
公开(公告)日：2009-03-26
申请号：US12212983
申请日：2008-09-18
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L27/1266 , G02F1/1368 , G02F1/167 , H01L27/1214 , H01L27/1218 , H01L29/04 , H01L29/78603 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： It is an object to provide an electrophoretic display device having a thin film transistor which has highly reliable electric characteristics, lightweight, and flexibility. A gate insulating film is formed over a gate electrode, a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film, a buffer layer is formed over the microcrystalline semiconductor film, a pair of source and drain regions are formed over the buffer layer, a pair of the source and drain electrodes in contact with the source and drain regions are formed. Then, the inverted-staggered thin film transistor is interposed between the flexible substrates, and the thin film transistor is provided with electrophoretic display element which is electrically connected by the pixel electrode. Then, the electrophoretic display electrode is surrounded by the partition layer so as to cover the end portion of the pixel electrode and provided over the pixel electrode.
摘要翻译：本发明的目的是提供一种具有薄膜晶体管的电泳显示装置，该薄膜晶体管具有高度可靠的电特性，重量轻和灵活性。在栅电极上形成栅极绝缘膜，在栅绝缘膜上形成作为沟道形成区域的微晶半导体膜，在微晶半导体膜上形成缓冲层，形成一对源区和漏区在缓冲层上形成与源区和漏区接触的一对源极和漏极。然后，倒置交错薄膜晶体管插入在柔性基板之间，并且薄膜晶体管设置有通过像素电极电连接的电泳显示元件。然后，电泳显示电极被分隔层包围，以覆盖像素电极的端部并且设置在像素电极上。

144. 发明申请

US20090072238A1 INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：绝缘栅场效应半导体器件及其制造方法
公开(公告)号：US20090072238A1
公开(公告)日：2009-03-19
申请号：US12277547
申请日：2008-11-25
申请人： Shunpei YAMAZAKI , Yasuhiko TAKEMURA , Hongyong ZHANG
发明人： Shunpei YAMAZAKI , Yasuhiko TAKEMURA , Hongyong ZHANG
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , G02F1/13454 , G02F2001/136245 , H01L21/76897 , H01L27/1214 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78651 , H01L29/78666 , H01L29/78675
摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
摘要翻译：制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。然后对栅电极进行阳极氧化，形成包围电极的氧化膜。以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。

145. 发明申请

US20090047758A1 METHOD OF MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20090047758A1
公开(公告)日：2009-02-19
申请号：US12186001
申请日：2008-08-05
申请人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Makoto FURUNO , Satoshi TORIUMI , Yasuhiro JINBO , Koji DAIRIKI
发明人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Makoto FURUNO , Satoshi TORIUMI , Yasuhiro JINBO , Koji DAIRIKI
IPC分类号： H01L21/336
CPC分类号： H01L29/04 , H01L21/0262 , H01L27/1222 , H01L27/127 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10−5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.
摘要翻译：在形成底栅极薄膜晶体管的情况下，进行通过等离子体CVD法在栅极绝缘膜上形成微晶半导体膜的步骤，以及在微晶半导体膜上形成非晶半导体膜的步骤。在形成微晶半导体膜的步骤中，反应室中的压力设定为10-5Pa以下，基板温度设定在120℃〜220℃的范围内，等离子体由引入氢气和硅气体，使氢等离子体作用于形成在栅极绝缘膜的表面上的反应产物，以在进行成膜的同时进行除去。此外，通过施加VHF频带的第一高频电力，VHF频带的第二高频电力彼此叠加而产生等离子体。

146. 发明申请

US20080237875A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080237875A1
公开(公告)日：2008-10-02
申请号：US12046817
申请日：2008-03-12
申请人： Shunpei YAMAZAKI , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA
发明人： Shunpei YAMAZAKI , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA
IPC分类号： H01L23/52 , H01L21/28
CPC分类号： H01L29/41733 , H01L21/76804 , H01L21/76805 , H01L23/485 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： A technique of manufacturing a semiconductor device in which etching in formation of a contact hole can be easily controlled is proposed. A semiconductor device includes at least a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer connected to the semiconductor layer via an opening which is formed at least in the semiconductor layer and the second insulating layer and partially exposes the insulating surface. The conductive layer is electrically connected to the semiconductor layer at the side surface of the opening which is formed in the semiconductor layer.
摘要翻译：提出了可以容易地控制形成接触孔的蚀刻的半导体器件的制造技术。半导体器件至少包括形成在绝缘表面上的半导体层; 形成在所述半导体层上的第一绝缘层; 形成在所述第一绝缘层上的栅电极; 形成在所述栅电极上的第二绝缘层; 以及形成在所述第二绝缘层之上的导电层，所述导电层经由至少在所述半导体层和所述第二绝缘层中形成并且部分地暴露所述绝缘表面的开口连接到所述半导体层。导电层在形成于半导体层的开口的侧面与半导体层电连接。

147. 发明申请

US20080129933A1 ANTI-REFLECTION FILM AND DISPLAY DEVICE 有权
标题翻译：防反射膜和显示装置
公开(公告)号：US20080129933A1
公开(公告)日：2008-06-05
申请号：US11950607
申请日：2007-12-05
申请人： Jiro NISHIDA , Yuji EGI , Takeshi NISHI , Shunpei YAMAZAKI
发明人： Jiro NISHIDA , Yuji EGI , Takeshi NISHI , Shunpei YAMAZAKI
IPC分类号： G02F1/1335 , G02B5/00
CPC分类号： G02B1/118 , G02B1/14 , G02F1/133502 , G02F2201/38
摘要： An anti-reflection film that can provide high visibility and has an anti-reflection function by which reflection of incident light from external can be further reduced, and a display device having such an anti-reflection film. A plurality of contiguous pyramidal projections is arranged in a geometric pattern, so that reflection of incident light is prevented. In addition, a protective layer formed of a material having a lower refractive index than the pyramidal projections is provided so as to fill a space between the plurality of pyramidal projections. The plurality of pyramidal projections has a hexagonal shape and can be densely arranged with no space therebetween. Further, since six sides of each pyramidal projection are provided at a different angle from the base, light can be effectively scattered in many directions.
摘要翻译：可以提供高可见度并具有抗反射功能的防反射膜，通过该反射功能可以进一步减少来自外部的入射光的反射，以及具有这种防反射膜的显示装置。多个相邻的金字塔形突起以几何图案布置，从而防止入射光的反射。此外，提供由折射率低于金字塔形突起的材料形成的保护层，以填充多个锥体状突起之间的空间。多个金字塔状突起具有六边形形状，并且可以密集地布置，其间没有间隙。此外，由于每个金字塔形突起的六个侧面以与基部不同的角度设置，所以可以在许多方向上有效地散射光。

148. 发明申请

US20080129184A1 PLASMA DISPLAY PANEL AND FIELD EMISSION DISPLAY 有权
标题翻译：等离子显示面板和场发射显示
公开(公告)号：US20080129184A1
公开(公告)日：2008-06-05
申请号：US11950760
申请日：2007-12-05
申请人： Jiro NISHIDA , Yuji EGI , Takeshi NISHI , Shunpei YAMAZAKI
发明人： Jiro NISHIDA , Yuji EGI , Takeshi NISHI , Shunpei YAMAZAKI
IPC分类号： H01J1/62
CPC分类号： H01J11/44 , H01J11/12 , H01J29/86 , H01J31/127 , H01J2211/442 , H01J2211/444 , H01J2329/892
摘要： It is an object to provide a plasma display and a field emission display that each have high visibility and an anti-reflection function that can further reduce reflection of incident light from external. Reflection of light can be prevented by having an anti-reflection layer that geometrically includes a plurality of adjacent pyramidal projections. In addition, a plurality of hexagonal pyramidal projections, each of which is provided with a protective layer formed of a material having a lower refractive index than a refractive index of the pyramidal projection so as to fill a space among the plurality of pyramidal projections, can be provided to be packed together without any spaces. Further, six sides of a pyramidal projection face different directions with respect to a base. Therefore, light can be diffused in many directions efficiently.
摘要翻译：本发明的目的是提供等离子体显示器和场致发射显示器，每个等离子体显示器和场致发射显示器都具有高可见度和抗反射功能，可以进一步减少来自外部的入射光的反射。可以通过具有几何地包括多个相邻的金字塔状突起的防反射层来防止光的反射。另外，多个六边形金字塔形突起，其每一个均设置有由折射率低于金字塔形突起的折射率的材料形成的保护层，以便填充多个锥体形突起之间的空间，提供包装在一起没有任何空间。此外，金字塔形突起的六个面相对于基部面向不同的方向。因此，光可以有效地在许多方向扩散。

149. 发明申请

US20080099664A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080099664A1
公开(公告)日：2008-05-01
申请号：US11928912
申请日：2007-10-30
申请人： Shunpei YAMAZAKI , Masahiro KATAYAMA , Yoshiaki OIKAWA , Atsushi HIROSE , Masayuki SAKAKURA
发明人： Shunpei YAMAZAKI , Masahiro KATAYAMA , Yoshiaki OIKAWA , Atsushi HIROSE , Masayuki SAKAKURA
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1443 , H01L27/1214 , H01L27/1266 , H01L31/02005 , H01L31/02162 , H01L31/022408 , H01L31/02327 , H01L31/1055 , H01L31/1892 , H01M10/46 , H03F3/08 , Y02E10/50
摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.
摘要翻译：一种半导体器件，包括在第一绝缘膜上包括光电二极管的第一元件和放大光电二极管的输出电流的放大器电路; 并且制造在第二绝缘膜上的在滤色器上方包括滤色器和外涂层的第二元件。第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。此外，放大器电路是包括薄膜晶体管的电流镜电路。此外，可以使用彩色胶片代替滤色器。

150. 发明申请

US20080085377A1 PLASMA TREATMENT APPARATUS AND METHOD FOR PLASMA TREATMENT 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20080085377A1
公开(公告)日：2008-04-10
申请号：US11950818
申请日：2007-12-05
申请人： Shunpei YAMAZAKI , Yasuyuki ARAI , Yasuko WATANABE
发明人： Shunpei YAMAZAKI , Yasuyuki ARAI , Yasuko WATANABE
IPC分类号： C23C16/452
CPC分类号： H01L21/67115 , C23C16/45519 , C23C16/45521 , C23C16/4557 , C23C16/4583 , C23C16/46 , C23C16/5093 , C23C16/513 , C23C16/54 , H01J37/32761 , H01L21/67069 , H01L21/67109 , H01L21/67748 , H01L21/67784 , H01L21/6838
摘要： A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.
摘要翻译：提供了等离子体处理装置和等离子体处理方法，其可以准确地控制等离子体和被处理物体之间的距离（以下称为对象），并且促进宽度较薄的基板的输送并长大。本发明的等离子体处理装置设置有用于在大气压或大气压下将处理气体引入第一电极和第二电极之间的位置的气体供给装置; 等离子体产生装置，用于在引入处理气体的条件下，通过向第一电极或第二电极施加高频电压来产生等离子体; 以及用于通过将处理气体或输送气体吹送到物体而使物体浮起来来运送物体的运送装置。蚀刻处理; 灰化治疗; 薄膜形成; 或者通过移动第一电极和第二电极之间的相对位置以及物体来执行使用第一电极和第二电极的部件的清洁处理。

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