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141. 发明授权

US5327070A Power supply circuit for driving a light emitting element 失效
标题翻译：用于驱动发光元件的电源电路
公开(公告)号：US5327070A
公开(公告)日：1994-07-05
申请号：US874496
申请日：1992-04-27
申请人： Yoichi Seki , Shinichi Endo , Hiroyuki Saito , Akira Ito , Michio Kawai
发明人： Yoichi Seki , Shinichi Endo , Hiroyuki Saito , Akira Ito , Michio Kawai
IPC分类号： H01L33/00 , G02B7/32 , H05B33/08 , G03B13/36 , G05F1/62
CPC分类号： H05B33/0815 , H05B33/0818 , Y02B20/346
摘要： In a step-up circuit for causing the emission of light of a distance measuring light emitting element, the step-up circuit outputs a step-up voltage from one terminal of a step-up capacitor. A step-up voltage level changeover circuit applies a step-up voltage to the capacitor every time the distance measuring light emitting element emits light that is higher than the step-up voltage in the normal state. The number of parts is reduced by eliminating a separate capacitor for light emission, the space for the circuit is reduced by using the capacitor having a small capacity, the soldering steps for fabrication of the circuit are automated; and the costs for assembly are ameliorated owing to the automation.
摘要翻译：在用于使距离测量发光元件发光的升压电路中，升压电路从升压电容器的一个端子输出升压电压。每当距离测量发光元件发射高于正常状态下的升压电压的光时，升压电压电平转换电路将升压电压施加到电容器。通过消除用于发光的单独的电容器来减少部件的数量，通过使用具有小容量的电容器来减少电路的空间，用于制造电路的焊接步骤是自动化的; 由于自动化，装配成本得到改善。

142. 发明授权

US5311054A Graded collector for inductive loads 失效
标题翻译：用于感性负载的分级收集器
公开(公告)号：US5311054A
公开(公告)日：1994-05-10
申请号：US674147
申请日：1991-03-25
申请人： Glenn A. DeJong , Gregory J. Scott , Akira Ito
发明人： Glenn A. DeJong , Gregory J. Scott , Akira Ito
IPC分类号： H01L21/331 , H01L21/74 , H01L29/08 , H01L29/36 , H01L29/72
CPC分类号： H01L29/66272 , H01L21/74 , H01L29/0821 , H01L29/36
摘要： A bipolar transistor having an improved collector structure includes a buried region of the same conductivity type as the collector region spaced from the base region and having a laterally graded impurity concentration with the lowest below the center of the emitter region. An integrated circuit may include transistors having the buried collector region of the diminishing lateral impurity concentration below the center of its emitter as well as having transistors with a uniform lateral impurity concentration below the total lateral extent of the emitter. A method of achieving the unique collector region includes forming at least a first collector region of a first conductivity type as two lateral portions of substantially uniform lateral impurity concentration with a space therebetween in a substrate of a second conductivity type and heating to form the buried collector struture of diminishing lateral impurity concentration. This is followed by forming a collector layer on the substrate, forming a base region in the collector region and an emitter region in the base region over the space in the buried collector region. If the integrated circuit includes transistors which do not have the unique graded collector, the buried collector region for these transistors is formed by introducing impurities having substantially uniform lateral impurity concentration in the substrate.
摘要翻译：具有改进的集电极结构的双极晶体管包括与基极区域间隔开的集电极区域具有相同导电类型的掩埋区域，并且具有最低于发射极区域中心的最低的杂质浓度。集成电路可以包括晶体管，其晶体管具有越来越小的横向杂质浓度低于其发射极中心的掩埋集电极区域，并且具有低于发射极的总横向范围的均匀横向杂质浓度的晶体管。实现唯一的集电极区域的方法包括：在第二导电类型的衬底中形成至少第一导电类型的第一集电极区域作为具有基本上均匀的横向杂质浓度的两个横向部分，并且在第二导电类型的衬底中形成空间，并加热以形成埋设的集电器横向杂质浓度越来越小。接着在衬底上形成集电极层，在集电极区域中形成基极区域，在掩埋集电极区域的空间上形成基极区域中的发射极区域。如果集成电路包括不具有唯一的梯度集电极的晶体管，则通过在衬底中引入具有基本均匀的横向杂质浓度的杂质来形成用于这些晶体管的掩埋集电极区域。

143. 发明授权

US4921329A Rear projection screen 失效
标题翻译：背投屏幕
公开(公告)号：US4921329A
公开(公告)日：1990-05-01
申请号：US221531
申请日：1988-07-19
申请人： Akira Ito , Mizuo Okada
发明人： Akira Ito , Mizuo Okada
IPC分类号： G03B21/62 , G03B21/625
CPC分类号： G03B21/625
摘要： Provided is a rear projection screen of a certain configuration having an entrance surface receiving red, blue and green rays from projectors on a projecting side and formed therein entrance lenses and an exit surface allowing images synthesized or merged with the red, blue and green light rays to be observed on a viewing side and formed therein exit lenses corresponding respectively to the incident lenses, each of the entrance lenses are each of the exit lenses having optical axes and lens surfaces around the optical axes, respectively, with theoretical curvatures so that each entrance lens transmits red, blue and green light rays to the corresponding exit lens while the entrance lens converges the light rays into a certain converging area around the cross point between the lens surface of the corresponding exit lens and the optical axis if the configuration of the screen is theoretical, and each associated exit lens emits the converged light rays from the exit surface toward the viewing side over a predetermined viewing angle, wherein the curvature of each exit lens is made to be moderate more than the theoretical curvature of the exit lens, outside of the converging area around the cross point between the lens surface and the optical axis of the exit lens.
摘要翻译：本发明提供一种具有一定形状的背投屏幕，其入射面从突出侧的投影仪接收红色，蓝色和绿色光线，并形成入射透镜和允许与红色，蓝色和绿色光线合成或合并的图像的出射面在观察侧观察并在其上形成分别对应入射透镜的出射透镜，每个入射透镜分别具有围绕光轴的光轴和透镜表面的理论曲率，使得每个入口透镜将红色，蓝色和绿色光线透射到相应的出射透镜，而入射透镜会将光线会聚到相应出射透镜的透镜表面与光轴之间的交叉点周围的某个会聚区域，如果屏幕的配置是理论上的，并且每个相关联的出射透镜从出射表面朝向视图发射会聚的光线其中每个出口透镜的曲率被制成比出射透镜的理论曲率更适度，在透镜表面和出射光轴之间的交叉点周围的会聚区域外侧镜片。

144. 发明授权

US4780847A Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US4780847A
公开(公告)日：1988-10-25
申请号：US898599
申请日：1986-08-21
申请人： Akira Ito
发明人： Akira Ito
IPC分类号： G11C11/41 , G11C7/20 , G11C11/40
CPC分类号： G11C7/20
摘要： A static RAM in which the source of a MOSFET of a memory cell is connected to a signal line which supplies a high level or a low level depending upon a reset signal, the memory cell containing a pair of data-holding MOSFET's of which the gates and drains are cross-coupled.
摘要翻译：一种静态RAM，其中存储单元的MOSFET的源极连接到根据复位信号提供高电平或低电平的信号线，该存储单元包含一对数据保持MOSFET，其中栅极和排水沟交叉耦合。

145. 发明授权

US4190614A Method for the production of low density copolymers of ethylene 失效
标题翻译：乙烯低密度共聚物生产方法
公开(公告)号：US4190614A
公开(公告)日：1980-02-26
申请号：US784308
申请日：1977-04-04
申请人： Akira Ito , Kenji Iwata
发明人： Akira Ito , Kenji Iwata
IPC分类号： C08F2/00 , C08F2/04 , C08F2/06 , C08F4/00 , C08F4/60 , C08F4/64 , C08F10/02 , C08F210/00 , C08F210/02 , C08F210/16 , C08F297/08 , C08F4/02 , C08F255/02
CPC分类号： C08F297/08 , C08F10/02 , C08F210/02 , C08F210/16 , Y10S526/904
摘要： In producing a low density polyethylene by a slurry copolymerization of ethylene and an .alpha.-olefin with use of a catalyst consisting of a magnesium compound-supported titanium and/or vanadium compound and an organoaluminum compound, a certain amount of ethylene is subject to a pre-polymerization in the presence of said catalyst prior to the copolymerization. Successively, the slurry copolymerization of ethylene and an .alpha.-olefin is effected in a low-boiling diluent to obtain a low density polyethylene of 0.925-0.950 in density, covering various grades in a wide range.
摘要翻译：在通过使用由镁化合物负载的钛和/或钒化合物和有机铝化合物组成的催化剂通过乙烯和α-烯烃的淤浆共聚制备低密度聚乙烯时，一定量的乙烯经受预在共聚之前在所述催化剂存在下进行聚合。接着，在低沸点稀释剂中进行乙烯和α-烯烃的淤浆共聚，得到密度为0.925-0.950的低密度聚乙烯，覆盖了宽范围内的各种等级。

146. 发明授权

US09770856B2 Composite molded article having two-layer structure 有权
公开(公告)号：US09770856B2
公开(公告)日：2017-09-26
申请号：US12736940
申请日：2009-05-26
申请人： Akira Ito , Satoshi Nagai , Hiroyuki Hamada , YewWei Leong
发明人： Akira Ito , Satoshi Nagai , Hiroyuki Hamada , YewWei Leong
IPC分类号： B32B7/04 , B32B27/08 , B32B27/28 , B32B27/36 , B32B37/04 , B32B37/15 , B29C45/14 , B29C45/16 , B29C47/02 , B29C47/04 , B29C47/06 , C08L59/00 , C08L67/02 , C08L67/04 , C08L69/00 , B32B15/08 , B29K67/00 , B29K69/00 , B29K669/00 , B29K659/00 , B29C45/00 , B29K59/00
CPC分类号： B29C45/1657 , B29C45/0001 , B29C45/14 , B29C45/14311 , B29C45/14778 , B29C45/16 , B29C45/1671 , B29C45/1679 , B29C47/02 , B29C47/04 , B29C47/06 , B29C2045/14319 , B29C2045/1659 , B29K2059/00 , B29K2067/04 , B29K2067/046 , B29K2069/00 , B29K2659/00 , B29K2667/04 , B29K2667/046 , B29K2669/00 , B29K2995/006 , B32B7/04 , B32B15/08 , B32B27/08 , B32B27/285 , B32B27/36 , B32B37/04 , B32B37/15 , B32B2250/02 , B32B2250/24 , B32B2307/716 , B32B2307/7163 , B32B2309/02 , B32B2367/00 , B32B2369/00 , B32B2371/00 , C08L59/00 , C08L67/02 , C08L67/04 , C08L69/00 , Y10T428/31507 , Y10T428/31786 , Y10T428/31797 , Y10T428/31928
摘要： The present invention has an object of providing a molded article of a composite structure obtained by bonding a polar thermoplastic resin, especially polyacetal, with another resin in a simple manner. According to the present invention, a molded article of a composite structure obtained by bonding a polar thermoplastic resin and a resin containing an aliphatic ester structure as a main component to each other in the state where at least a face at which both of the materials contact each other is in a melted state can be provided.

147. 发明授权

US09123807B2 Reduction of parasitic capacitance in a semiconductor device 有权
标题翻译：降低半导体器件中的寄生电容
公开(公告)号：US09123807B2
公开(公告)日：2015-09-01
申请号：US13019695
申请日：2011-02-02
申请人： Akira Ito
发明人： Akira Ito
IPC分类号： H01L29/66 , H01L29/78 , H01L29/10 , H01L29/45 , H01L29/49
CPC分类号： H01L29/4983 , H01L29/1045 , H01L29/456 , H01L29/4933 , H01L29/7835
摘要： An apparatus is disclosed to increase a reduced a parasitic capacitance of a semiconductor device. The semiconductor device includes a modified gate region to effectively reduce an overlap capacitance and modified well regions to effectively reduce a junction capacitance. The modified gate region includes a doped region and an undoped to decrease an effective area of the overlap capacitance. The modified well regions are separated by a substantially horizontal distance to increase an effective distance of the junction capacitance. This decrease in the effective area of the overlap capacitance and this increase in the effective distance of the junction capacitance reduces the parasitic capacitance of the semiconductor device.
摘要翻译：公开了一种增加半导体器件的寄生电容降低的装置。半导体器件包括修改的栅极区域，以有效地减少重叠电容和修改的阱区域以有效地减少结电容。修改的栅极区域包括掺杂区域和未掺杂的，以减小重叠电容的有效面积。改进的阱区域被分开大致水平的距离以增加结电容的有效距离。重叠电容的有效面积的减小和结电容的有效距离的增加减小了半导体器件的寄生电容。

148. 发明授权

US09082646B2 Low threshold voltage metal oxide semiconductor 有权
标题翻译：低阈值电压金属氧化物半导体
公开(公告)号：US09082646B2
公开(公告)日：2015-07-14
申请号：US13552349
申请日：2012-07-18
申请人： Akira Ito
发明人： Akira Ito
IPC分类号： H01L29/76 , H01L29/94 , H01L29/10 , H01L29/423 , H01L29/78 , H01L29/06 , H01L29/08
CPC分类号： H01L29/1045 , H01L29/0638 , H01L29/0653 , H01L29/0847 , H01L29/086 , H01L29/1083 , H01L29/42368 , H01L29/7816 , H01L29/7835
摘要： A semiconductor device includes a source region disposed with a semiconductor substrate; a drain region disposed with the semiconductor substrate; a gate region disposed onto the semiconductor substrate and positioned between the source region and the drain region. The semiconductor device also includes a gate oxide region disposed onto the semiconductor substrate in contact with the gate region and a well region implanted onto the semiconductor substrate and under the gate region and the gate oxide region. The gate oxide region has a lower outer edge portion that contacts the well region.
摘要翻译：半导体器件包括设置有半导体衬底的源极区域; 设置在所述半导体基板上的漏极区域; 栅极区域，设置在半导体衬底上并位于源极区域和漏极区域之间。半导体器件还包括设置在与栅极区域接触的半导体衬底上的栅极氧化物区域和注入到半导体衬底上并且在栅极区域和栅极氧化物区域下方的阱区域。栅极氧化物区域具有接触阱区域的下部外边缘部分。

149. 发明授权

US09074987B2 Lubricant distribution acquisition device and lubricant distribution acquisition method 有权
标题翻译：润滑油分配采集装置和润滑油分配采集方法
公开(公告)号：US09074987B2
公开(公告)日：2015-07-07
申请号：US14002788
申请日：2012-03-01
申请人： Takehisa Takano , Hiroyuki Nose , Akira Ito
发明人： Takehisa Takano , Hiroyuki Nose , Akira Ito
IPC分类号： G01N23/05 , G01M13/04 , F16C19/06 , F16C33/66 , F16C19/52
CPC分类号： G01N23/05 , F16C19/06 , F16C19/52 , F16C33/667 , G01M13/04
摘要： The direction of the main axis of a bearing is adjusted by turning a supporting base (12a) that is supporting the bearing, and by then receiving a neutron beam that has been transmitted through the bearing from the direction of the main axis thereof, and converting it into an electromagnetic wave, and by then forming images using the received electromagnetic wave, lubricant distribution data that shows the distribution of a lubricant inside the bearing is acquired.
摘要翻译：通过转动支撑轴承的支撑底座（12a），然后从主轴方向接收从轴承传递的中子束来调节轴承主轴的方向，并转换然后利用接收到的电磁波形成图像，然后获得表示润滑剂在轴承内的分布的润滑剂分配数据。

150. 发明授权

US08866258B2 Interposer structure with passive component and method for fabricating same 有权
标题翻译：具有无源元件的内插器结构及其制造方法
公开(公告)号：US08866258B2
公开(公告)日：2014-10-21
申请号：US12587482
申请日：2009-10-06
申请人： Wei Xia , Xiangdong Chen , Akira Ito
发明人： Wei Xia , Xiangdong Chen , Akira Ito
IPC分类号： H01L27/08 , H01L23/498 , H01L21/768 , H01L21/48 , H01L23/14
CPC分类号： H01L23/49827 , H01L21/486 , H01L21/76898 , H01L23/147 , H01L23/49822 , H01L2223/6677 , H01L2224/16225 , H01L2924/15311
摘要： According to an exemplary embodiment, an interposer structure for electrically coupling a semiconductor die to a support substrate in a semiconductor package includes at least one through-wafer via extending through a semiconductor substrate, where the at least one through-wafer via provides an electrical connection between the semiconductor die and the support substrate. The interposer structure further includes a passive component including a trench conductor, where the trench conductor extends through the semiconductor substrate. The passive component further includes a dielectric liner situated between the trench conductor and the semiconductor substrate. The passive component can further include at least one conductive pad for electrically coupling the trench conductor to the semiconductor die. The passive component can be, for example, an inductor or an antenna.
摘要翻译：根据示例性实施例，用于将半导体管芯电耦合到半导体封装中的支撑衬底的插入器结构包括延伸穿过半导体衬底的至少一个贯通晶片，其中至少一个贯通晶片通孔提供电连接在半导体管芯和支撑衬底之间。插入器结构还包括无源部件，其包括沟槽导体，其中沟槽导体延伸穿过半导体衬底。无源部件还包括位于沟槽导体和半导体衬底之间的电介质衬垫。无源部件还可以包括至少一个用于将沟槽导体电耦合到半导体管芯的导电焊盘。无源部件可以是例如电感器或天线。

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