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    • 148. 发明授权
    • Apparatus for high-efficiency synthesis of carbon nanostructure
    • 碳纳米结构高效合成装置
    • US08505478B2
    • 2013-08-13
    • US12805528
    • 2010-08-04
    • Osamu SuekaneToshikazu NosakaYoshikazu NakayamaLujun PanTakeshi NagasakaToru SakaiHiroyuki TsuchiyaToshiki GotoXu Li
    • Osamu SuekaneToshikazu NosakaYoshikazu NakayamaLujun PanTakeshi NagasakaToru SakaiHiroyuki TsuchiyaToshiki GotoXu Li
    • C23C16/52C23C16/455C23F1/00H01L21/306C23C16/06C23C16/22
    • B82Y30/00B82Y40/00C01B32/162C01B2202/30
    • Developed is high-efficiency synthesis method and apparatus capable of promoting the initial growth of carbon nanostructure by eliminating the initial fluctuation time and rising time in raw gas flow quantity.-A high-efficiency synthesis method of carbon nanostructure according to the present invention is a high-efficiency synthesis method of carbon nanostructure, the method comprising: bringing raw material gas and a catalyst into contact with each other under reactive conditions so as to produce a carbon nanostructure, wherein: the initiation of contact of the raw material gas with the catalyst is carried out instantaneously. Reaction conditions such as temperature and raw material gas concentration are set so as to meet those for catalyst growth, and under the reaction conditions, the initiation of contact of raw material gas G with catalyst 6 is carried out instantaneously. Consequently, the initial growth of carbon nanostructure is positively carried out, and the height growth and thickness growth thereof can be effected in high efficiency. Further, high-density growth and short-time high-speed growth can be realized. The catalyst includes any forms of catalyst such as catalyst substrate, catalyst structure, catalyst powders and catalyst pellet. It is especially preferred to employ a system wherein the feed and interruption of the raw material gas G are intermittently controlled by means of an electromagnetic three-way valve 24.
    • 开发了能够通过消除原始气体流量的初始波动时间和上升时间来促进碳纳米结构的初始生长的高效合成方法和装置。根据本发明的碳纳米结构的高效合成方法是 碳纳米结构的高效合成方法,其特征在于,在反应条件下使原料气体和催化剂相互接触,制成碳纳米结构体,其中:原料气与催化剂的接触开始 是瞬间进行的。 反应条件如温度和原料气体浓度设定为满足催化剂生长的条件,在反应条件下,原料气体G与催化剂6的接触开始立即进行。 因此,积极地进行碳纳米结构的初始生长,并且可以高效率地实现其高度生长和厚度生长。 此外,可以实现高密度生长和短时高速生长。 催化剂包括任何形式的催化剂,如催化剂底物,催化剂结构,催化剂粉末和催化剂颗粒。 特别优选采用通过电磁三通阀24间歇地控制原料气体G的进料和中断的系统。
    • 149. 发明申请
    • Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
    • 稳定,浓缩,水溶性纤维素自由化学机械抛光组合物
    • US20120225556A1
    • 2012-09-06
    • US13039705
    • 2011-03-03
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • H01L21/306C09K3/14C09K13/00
    • H01L21/3212C09G1/16
    • A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method for making a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.
    • 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选地,氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制造本发明的化学机械抛光组合物的方法和基板的化学机械抛光方法,包括:提供基板,其中所述基板是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。
    • 150. 发明申请
    • Stable, concentratable chemical mechanical polishing composition and methods relating thereto
    • 稳定,可浓缩的化学机械抛光组合物及其相关方法
    • US20120225555A1
    • 2012-09-06
    • US13039723
    • 2011-03-03
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • H01L21/306C09K13/00
    • H01L21/3212C09G1/16
    • A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.
    • 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 水溶性纤维素; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选地,氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制备本发明的化学机械抛光组合物的方法和基材的化学机械抛光方法,包括:提供基材,其中所述基材是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。