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131. 发明申请

US20140042453A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20140042453A1
公开(公告)日：2014-02-13
申请号：US13925339
申请日：2013-06-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： Toru Hiyoshi , Kosuke Uchida , Takeyoshi Masuda
IPC分类号： H01L29/16 , H01L21/263
CPC分类号： H01L29/1608 , H01L21/0445 , H01L21/049 , H01L21/2636 , H01L21/324 , H01L29/045 , H01L29/34 , H01L29/51 , H01L29/66068 , H01L29/7395 , H01L29/7802
摘要： A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step of heating the silicon carbide substrate in an atmosphere of oxygen is performed. A second heating step of heating the silicon carbide substrate to a temperature of 1300° C. or more and 1500° C. or less in an atmosphere of gas containing nitrogen atoms or phosphorus atoms is performed after the first heating step. A third heating step of heating the silicon carbide substrate in an atmosphere of a first inert gas is performed after the second heating step. Thus, the silicon carbide semiconductor device in which threshold voltage variation is small, and a method for manufacturing the same can be provided.
摘要翻译：一种制造碳化硅半导体器件的方法包括以下步骤。制备碳化硅衬底。执行在氧气气氛中加热碳化硅衬底的第一加热步骤。在第一加热步骤之后，在含有氮原子或磷原子的气体气氛中，将碳化硅基板加热至1300℃以上且1500℃以下的温度的第二加热工序。在第二加热步骤之后进行在第一惰性气体气氛中加热碳化硅衬底的第三加热步骤。因此，可以提供阈值电压变化小的碳化硅半导体器件及其制造方法。

132. 发明申请

US20140017888A1 SALICIDE PROCESS 有权
标题翻译：杀菌工艺
公开(公告)号：US20140017888A1
公开(公告)日：2014-01-16
申请号：US13545736
申请日：2012-07-10
申请人： Chia-Chang Hsu , Bor-Shyang Liao , Kuo-Chih Lai , Nien-Ting Ho , Chi-Mao Hsu , Shu-Min Huang , Min-Chung Cheng
发明人： Chia-Chang Hsu , Bor-Shyang Liao , Kuo-Chih Lai , Nien-Ting Ho , Chi-Mao Hsu , Shu-Min Huang , Min-Chung Cheng
IPC分类号： H01L21/263
CPC分类号： H01L29/165 , H01L29/665 , H01L29/7833 , Y02P70/605
摘要： A salicide process is described. A substrate having thereon an insulating layer and a silicon-based region is provided. A nickel-containing metal layer is formed on the substrate. A first anneal process is performed to form a nickel-rich silicide layer on the silicon-based region. The remaining nickel-containing metal layer is stripped. A thermal recovery process is performed at a temperature of 150-250° C. for a period longer than 5 minutes. A second anneal process is performed to change the phase of the nickel-rich silicide layer and form a low-resistivity mononickel silicide layer.
摘要翻译：描述了一个自杀过程。提供了其上具有绝缘层和硅基区域的衬底。在基板上形成含镍金属层。执行第一退火工艺以在硅基区域上形成富镍硅化物层。剩余的含镍金属层被剥离。热回收过程在150-250℃的温度下进行5分钟以上。进行第二退火处理以改变富镍硅化物层的相位并形成低电阻率单锡硅化物层。

133. 发明申请

US20140004716A1 Apparatus and Method for Improved Control of Heating and Cooling of Substrates 审中-公开
标题翻译：改善基板加热和冷却控制的装置和方法
公开(公告)号：US20140004716A1
公开(公告)日：2014-01-02
申请号：US14012473
申请日：2013-08-28
申请人： Blake R. Koelmel , Norman L. Tam , Joseph M. Ranish
发明人： Blake R. Koelmel , Norman L. Tam , Joseph M. Ranish
IPC分类号： H01L21/263
CPC分类号： H01L21/2636 , H01L21/67098 , H01L21/67115
摘要： Methods and apparatus for processing substrates and controlling the heating and cooling of substrates are described. A radiation source providing radiation in a first range of wavelengths heats the substrate within a predetermined temperature range, the substrate being absorptive of radiation in a second range of wavelengths within the first range of wavelengths and within the predetermined temperature rang. A filter prevents at least a portion of radiation within the second wavelength range from reaching the substrate.
摘要翻译：描述了用于处理衬底和控制衬底的加热和冷却的方法和设备。提供在第一波长范围内的辐射的辐射源将衬底加热到预定温度范围内，所述衬底吸收第一波长范围内的第二波长范围内且在预定温度范围内的辐射。滤光器防止第二波长范围内的至少一部分辐射到达基板。

134. 发明申请

US20130273751A1 SUBSTRATE PROCESSING WITH REDUCED WARPAGE AND/OR CONTROLLED STRAIN 有权
标题翻译：具有降低的温度和/或控制应变的基板加工
公开(公告)号：US20130273751A1
公开(公告)日：2013-10-17
申请号：US13913045
申请日：2013-06-07
申请人： Ultratech, Inc.
发明人： Yun Wang , Shaoyin Chen
IPC分类号： H01L21/263
CPC分类号： H01L21/263 , B23K26/0006 , B23K26/082 , B23K26/0823 , B23K26/352 , B23K2103/56 , C30B1/06 , H01L21/02532 , H01L21/02675 , H01L21/02691
摘要： Provided are systems and methods for processing the surface of substrates that scan a laser beam at one or more selected orientation angles. The orientation angle or angles may be selected to reduce substrate warpage. When the substrates are semiconductor wafers having microelectronic devices, the orientation angles may be selected to produce controlled strain and to improve electronic performance of the devices.
摘要翻译：提供了用于处理以一个或多个选定取向角度扫描激光束的基板表面的系统和方法。可以选择取向角或角度以减少基板翘曲。当衬底是具有微电子器件的半导体晶片时，可以选择取向角以产生受控应变并改善器件的电子性能。

135. 发明申请

US20130193354A1 DRAWING METHOD AND DRAWING DEVICE 有权
标题翻译：绘图方法和绘图装置
公开(公告)号：US20130193354A1
公开(公告)日：2013-08-01
申请号：US13823981
申请日：2011-07-27
申请人： Dai Tsunoda , Masahiro Shoji , Hiroyuki Tsunoe , Shuji Hada , Ayuko Sato
发明人： Dai Tsunoda , Masahiro Shoji , Hiroyuki Tsunoe , Shuji Hada , Ayuko Sato
IPC分类号： H01L21/263
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31769 , H01J2237/31776 , H01L21/263
摘要： Stored energy is evaluated for each of segmented regions, and using the evaluated stored energy, an optimal irradiation amount for an electron beam is evaluated by a conjugate gradient method. The evaluated stored energy is used instead of calculating a determinant (Apk) in the procedure that includes calculation of the determinant (Apk) from among repeated calculation procedures that follow the conjugate gradient method and seek to answer a simultaneous linear equation (Ax=b) with a matrix (A) as a coefficient. Thus it is possible to evaluate the optimal irradiation amount for an electron beam with a high processing speed and a high degree of accuracy, and without expressly requiring the calculation of Apk, by managing the giant matrix (A) comprising numerous factors according to reduction of lines of circuitry in a circuit pattern.
摘要翻译：对于每个分段区域评估存储的能量，并且使用所评估的存储能量，通过共轭梯度法评估电子束的最佳照射量。使用评估的存储能量来代替在包括计算迭代梯度方法的重复计算过程中的行列式（Apk）的计算过程中计算行列式（Apk），并尝试回答同时线性方程（Ax = b）以矩阵（A）为系数。因此，可以以高处理速度和高精确度来评估电子束的最佳照射量，并且不需要明确地要求计算Apk，通过根据减少的方式管理包括许多因素的巨型基质（A）电路图案中的电路线。

136. 发明申请

US20130126573A1 METHOD OF MATERIAL PROCESSING BY LASER FILAMENTATION 有权
标题翻译：通过激光熔化材料加工的方法
公开(公告)号：US20130126573A1
公开(公告)日：2013-05-23
申请号：US13640140
申请日：2011-07-12
申请人： S. Abbas Hosseini , Peter R. Herman
发明人： S. Abbas Hosseini , Peter R. Herman
IPC分类号： B23K26/00 , H01L21/263 , B26F3/00
CPC分类号： B23K26/0057 , B23K26/0006 , B23K26/0604 , B23K26/0619 , B23K26/0622 , B23K26/0624 , B23K26/083 , B23K26/53 , B23K2103/42 , B23K2103/50 , B23K2103/52 , B23K2103/54 , B23K2103/56 , B26F3/00 , C03B33/0222 , C03C23/0025 , H01L21/2633 , H01L21/78 , Y10T225/12
摘要： A method is provided for the internal processing of a transparent substrate in preparation for a cleaving step. The substrate is irradiated with a focused laser beam that is comprised of pulses having an energy and pulse duration selected to produce a filament within the substrate. The substrate is translated relative to the laser beam to irradiate the substrate and produce an additional filament at one or more additional locations. The resulting filaments form an array defining an internally scribed path for cleaving said substrate. Laser beam parameters may be varied to adjust the filament length and position, and to optionally introduce V-channels or grooves, rendering bevels to the laser-cleaved edges. Preferably, the laser pulses are delivered in a burst train for lowering the energy threshold for filament formation, increasing the filament length, thermally annealing of the filament modification zone to minimize collateral damage, improving process reproducibility, and increasing the processing speed compared with the use of low repetition rate lasers.
摘要翻译：提供了一种在制备切割步骤中对透明基板进行内部处理的方法。用聚焦激光束照射衬底，该激光束由具有选择的能量和脉冲持续时间的脉冲组成，以在衬底内产生细丝。衬底相对于激光束平移以照射衬底并在一个或多个附加位置产生另外的细丝。所得到的长丝形成限定用于切割所述基底的内部刻划路径的阵列。可以改变激光束参数以调节灯丝长度和位置，并且可选地引入V沟道或凹槽，从而使激光切割边缘产生斜面。优选地，激光脉冲在突发串中传送，以降低灯丝形成的能量阈值，增加灯丝长度，灯丝改性区域的热退火以最小化附带损伤，提高工艺再现性，并且与使用相比提高了处理速度的低重复率激光器。

137. 发明申请

US20130034970A1 PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：US20130034970A1
公开(公告)日：2013-02-07
申请号：US13196052
申请日：2011-08-02
申请人： Hiroyuki Takaba
发明人： Hiroyuki Takaba
IPC分类号： H01L21/263
CPC分类号： C23C16/26 , C23C16/45565 , C23C16/509 , C23C16/511 , C23C16/517 , H01L21/0212 , H01L21/02274
摘要： A method for forming a fluorocarbon layer using a plasma reaction process includes the step of applying a microwave power and an RF bias. The microwave power and the RF bias are applied under a pressure ranging from 20 mTorr to 60 mTorr.
摘要翻译：使用等离子体反应方法形成碳氟化合物层的方法包括施加微波功率和RF偏压的步骤。在20mTorr至60mTorr的压力下施加微波功率和RF偏压。

138. 发明申请

US20120319121A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR-ON-INSULATOR STRUCTURE HAVING LOW ELECTRICAL LOSSES, AND CORRESPONDING STRUCTURE 有权
标题翻译：制造具有低电损耗的半导体绝缘体结构的方法及相应的结构
公开(公告)号：US20120319121A1
公开(公告)日：2012-12-20
申请号：US13487066
申请日：2012-06-01
申请人： Patrick Reynaud , Sébastien Kerdiles , Daniel Delprat
发明人： Patrick Reynaud , Sébastien Kerdiles , Daniel Delprat
IPC分类号： H01L29/38 , H01L21/265 , H01L21/263
CPC分类号： H01L27/1203 , H01L21/76254 , H01L29/0649
摘要： A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950° C. for at least 10 minutes.
摘要翻译：一种具有降低的电损耗的绝缘体上半导体结构的制造方法，其包括由硅，氧化物层和半导体材料薄层制成的支撑衬底，以及在支撑衬底和氧化物层之间交错的多晶硅层。该方法包括能够在形成多晶硅层之前赋予支撑衬底高电阻率的处理，然后在不超过950℃的温度下在该结构上进行至少一个长的热稳定化至少10分钟。

139. 发明申请

US20120276754A1 METHODS AND SYSTEMS FOR THERMAL-BASED LASER PROCESSING A MULTI-MATERIAL DEVICE 有权
标题翻译：用于基于热的激光加工多物质装置的方法和系统
公开(公告)号：US20120276754A1
公开(公告)日：2012-11-01
申请号：US13541320
申请日：2012-07-03
申请人： James J. Cordingley , Jonathan S. Ehrmann , David M. Filgas , Shepard D. Johnson , Joohan Lee , Donald V. Smart , Donald J. Svetkoff
发明人： James J. Cordingley , Jonathan S. Ehrmann , David M. Filgas , Shepard D. Johnson , Joohan Lee , Donald V. Smart , Donald J. Svetkoff
IPC分类号： H01L21/263 , B23K26/00
CPC分类号： B23K26/0736 , B23K26/032 , B23K26/04 , B23K26/043 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/0665 , B23K26/067 , B23K26/082 , B23K26/10 , B23K26/16 , B23K26/361 , B23K26/389 , B23K26/40 , B23K2101/38 , B23K2101/40 , B23K2103/10 , B23K2103/12 , B23K2103/172 , B23K2103/50 , H01L21/485 , H01L21/76888 , H01L21/76894 , H01L22/12 , H01L23/5258 , H01L2924/0002 , H05K3/0026 , H01L2924/00
摘要： A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.
摘要翻译：提供一种用于局部处理形成在基板上的预定微结构而不引起基板或其上形成在基板上的其它结构的电学或物理特性的不期望的变化的方法和系统。该方法包括基于与预定微结构，衬底和其它结构的激光脉冲相互作用的模型来提供信息。基于该信息确定至少一个脉冲的至少一个特性。生成包括至少一个脉冲的脉冲激光束。该方法还包括将具有至少一个确定特性的至少一个脉冲照射到预定微结构上的点中。所述至少一个脉冲的至少一个确定的特征和其它特征足以在不引起不期望的变化的情况下局部地处理预定的微结构。

140. 发明申请

US20120244725A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT 有权
标题翻译：热处理方法和热处理装置通过用光照射基板加热基板
公开(公告)号：US20120244725A1
公开(公告)日：2012-09-27
申请号：US13417498
申请日：2012-03-12
申请人： Kazuhiko FUSE , Shinichi KATO , Kenichi YOKOUCHI
发明人： Kazuhiko FUSE , Shinichi KATO , Kenichi YOKOUCHI
IPC分类号： H01L21/263 , F27B9/36
CPC分类号： H01L21/2253 , F27B17/0025 , H01L21/02694 , H01L21/26513 , H01L21/2686 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68707 , H01L21/68742
摘要： First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
摘要翻译：执行使闪光灯的发射输出在1至20毫秒的范围内达到其最大值的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度在1到20毫秒的范围内的时间段。这实现了杂质的活化。随后，进行从3-50毫秒的范围内的最大值的最大值逐渐降低的第二次照射，将前表面的温度保持在目标温度±25℃左右的范围内时间段在3到50毫秒的范围内。这防止了杂质的扩散抑制了工艺引起的损伤的发生。

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