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131. 发明申请

US20070063237A1 Magnetic device having multilayered free ferromagnetic layer 有权
标题翻译：具有多层自由铁磁层的磁性器件
公开(公告)号：US20070063237A1
公开(公告)日：2007-03-22
申请号：US11498294
申请日：2006-08-01
申请人： Yiming Huai , Zhitao Diao , Eugene Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Chen
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。每个自由铁磁层可以包括两层或更多层，并且可以是多层自由铁磁性堆叠，其包括第一和第二铁磁层和第一和第二铁磁层之间的非磁性间隔物。

132. 发明授权

US07190611B2 Spin-transfer multilayer stack containing magnetic layers with resettable magnetization 有权
标题翻译：包含具有可复位磁化的磁性层的自旋转移多层堆叠
公开(公告)号：US07190611B2
公开(公告)日：2007-03-13
申请号：US10338148
申请日：2003-01-07
申请人： Paul P. Nguyen , Yiming Huai
发明人： Paul P. Nguyen , Yiming Huai
IPC分类号： G11C11/00 , H01L43/00
CPC分类号： G11C11/15 , G11C11/5607
摘要： A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer has at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an antiferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.
摘要翻译：用于高密度存储器阵列的磁性元件包括可重置层和存储层。可复位层具有通过至少一个外部产生的磁场在选定方向上设定的磁化。当写入电流通过磁性元件时，存储层具有至少一个易磁化轴和基于自旋转移效应改变方向的磁化。磁性元件的替代实施例包括由隧道势垒层，钉扎磁性层和反铁磁层形成的额外的多层结构，其在预定方向上钉住钉扎层的磁化。磁性元件的另一替代实施例包括由隧道势垒层和具有与基本实施例的可重置层的磁矩不同的磁矩的第二可复位层形成的附加多层结构。

133. 发明授权

US07161829B2 Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements 有权
标题翻译：使用自旋转移的磁性元件的电流限制通过层和使用这种磁性元件的MRAM器件
公开(公告)号：US07161829B2
公开(公告)日：2007-01-09
申请号：US10665945
申请日：2003-09-19
申请人： Yiming Huai , Paul P. Nguyen , Frank Albert
发明人： Yiming Huai , Paul P. Nguyen , Frank Albert
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/16
摘要： A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).
摘要翻译：公开了一种用于提供和磁性元件的方法和系统。在一个方面，磁性元件至少包括钉扎层，自由层和驻留在被钉扎层和自由层之间的电流限制层。被钉扎层是铁磁性的并且具有第一磁化强度。电流限制层在绝缘矩阵中具有至少一个通道。通道是导电的并延伸通过电流限制层。自由层是铁磁性的并且具有第二磁化强度。被钉扎层，自由层和电流限制层被配置为允许使用自旋转移来切换自由层的磁化。磁性元件还可以包括其它层，包括用于自旋阀的层，自旋隧道结，双自旋阀，双自旋隧道结，以及双自旋阀/隧道结构，。

134. 发明申请

US20060279981A1 Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein 有权
标题翻译：使用其中的旋转转移和磁性元件的快速磁存储器件
公开(公告)号：US20060279981A1
公开(公告)日：2006-12-14
申请号：US11147944
申请日：2005-06-08
申请人： Zhitao Diao , Yiming Huai , Mahendra Pakala , Zhenghong Qian
发明人： Zhitao Diao , Yiming Huai , Mahendra Pakala , Zhenghong Qian
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，多个字线和多个位线。多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。多个磁性元件中的每一个具有第一端和第二端。所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

135. 发明授权

US07098494B2 Re-configurable logic elements using heat assisted magnetic tunneling elements 有权
标题翻译：使用热辅助磁隧道元件的可重构逻辑元件
公开(公告)号：US07098494B2
公开(公告)日：2006-08-29
申请号：US10869734
申请日：2004-06-16
申请人： Mahendra Pakala , Yiming Huai
发明人： Mahendra Pakala , Yiming Huai
IPC分类号： H01L31/062
CPC分类号： H03K19/168 , B82Y25/00 , H01F10/3254 , H01L43/08
摘要： A magnetic logic cell includes a magnetic element having a pinned layer, a free layer, and a spacer layer. The pinned and free layers have pinned and free layer magnetizations. The spacer layer resides between the pinned and free layers. In one aspect, the magnetic logic cell includes a first configuration line that is electrically connected to the magnetic element and carries a first current and a second configuration line electrically that is insulated from the magnetic element and the first configuration line and carries a second current. The first or second current alone cannot switch the free layer magnetization. The first and second currents together can switch the free layer magnetization. When the first current is driven through the magnetic element and the second current is provided, the combination sets the pinned layer magnetization direction. In one aspect, the pinned layer magnetization is set by heating the AFM layer to approximately at or above the blocking temperature. In order to configure the logic cell, an initial direction for the free layer magnetization is also set.
摘要翻译：磁逻辑单元包括具有钉扎层，自由层和间隔层的磁性元件。被钉扎和自由层具有钉扎和自由层磁化。间隔层位于固定层和自由层之间。在一个方面，磁逻辑单元包括电连接到磁性元件的第一配置线，并且电连接第一电流和第二配置线，其与磁性元件和第一配置线绝缘并且承载第二电流。单独的第一或第二电流不能切换自由层磁化。第一和第二电流一起可以切换自由层的磁化。当第一电流被驱动通过磁性元件并且提供第二电流时，组合设置钉扎层的磁化方向。在一个方面，通过将AFM层加热到大约等于或高于阻挡温度来设定钉扎层的磁化强度。为了配置逻辑单元，还设置了自由层磁化的初始方向。

136. 发明申请

US20060128038A1 Method and system for providing a highly textured magnetoresistance element and magnetic memory 审中-公开
标题翻译：用于提供高纹理磁阻元件和磁存储器的方法和系统
公开(公告)号：US20060128038A1
公开(公告)日：2006-06-15
申请号：US11294766
申请日：2005-12-05
申请人： Mahendra Pakala , Thierry Valet , Yiming Huai , Zhitao Diao
发明人： Mahendra Pakala , Thierry Valet , Yiming Huai , Zhitao Diao
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是绝缘的并且具有有序晶体结构。间隔层还被构造成允许隧道穿过间隔层。在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

137. 发明申请

US20060081953A1 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization 有权
公开(公告)号：US20060081953A1
公开(公告)日：2006-04-20
申请号：US11239969
申请日：2005-09-30
申请人： Paul Nguyen , Yiming Huai
发明人： Paul Nguyen , Yiming Huai
IPC分类号： H01L43/00
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.

138. 发明授权

US07009877B1 Three-terminal magnetostatically coupled spin transfer-based MRAM cell 有权
标题翻译：三端静电耦合自旋转移的MRAM单元
公开(公告)号：US07009877B1
公开(公告)日：2006-03-07
申请号：US10714073
申请日：2003-11-14
申请人： Yiming Huai , Paul P. Nguyen , Frank Albert
发明人： Yiming Huai , Paul P. Nguyen , Frank Albert
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , G11C11/16 , H01L43/08
摘要： A magnetic memory device for reading and writing a data state comprises at least three terminals including first, second, and third terminals. The magnetic memory device also includes a spin transfer (ST) driven element, disposed between the first terminal and the second terminal, and a readout element, disposed between the second terminal and the third terminal. The ST driven element includes a first free layer, and a readout element includes a second free layer. A magnetization direction of the second free layer in the readout element indicates a data state. A magnetization reversal of the first free layer within the ST driven element magnetostatically causes a magnetization reversal of the second free layer in the readout element, thereby recording the data state.
摘要翻译：用于读取和写入数据状态的磁存储器件包括至少三个包括第一，第二和第三端子的端子。磁存储装置还包括设置在第一端子和第二端子之间的自旋转移（ST）驱动元件和设置在第二端子和第三端子之间的读出元件。 ST驱动元件包括第一自由层，读出元件包括第二自由层。读出元件中的第二自由层的磁化方向表示数据状态。 ST驱动元件内的第一自由层的磁化反转磁静态地导致读出元件中第二自由层的磁化反转，从而记录数据状态。

139. 发明申请

US20050280058A1 RE-CONFIGURABLE LOGIC ELEMENTS USING HEAT ASSISTED MAGNETIC TUNNELING ELEMENTS 有权
标题翻译：使用热辅助磁性元件的可重构逻辑元件
公开(公告)号：US20050280058A1
公开(公告)日：2005-12-22
申请号：US10869734
申请日：2004-06-16
申请人： Mahendra Pakala , Yiming Huai
发明人： Mahendra Pakala , Yiming Huai
IPC分类号： H01F10/32 , H01L29/76 , H01L43/08 , H03K19/168
CPC分类号： H03K19/168 , B82Y25/00 , H01F10/3254 , H01L43/08
摘要： A magnetic logic cell includes a magnetic element having a pinned layer, a free layer, and a spacer layer. The pinned and free layers have pinned and free layer magnetizations. The spacer layer resides between the pinned and free layers. In one aspect, the magnetic logic cell includes a first configuration line that is electrically connected to the magnetic element and carries a first current and a second configuration line electrically that is insulated from the magnetic element and the first configuration line and carries a second current. The first or second current alone cannot switch the free layer magnetization. The first and second currents together can switch the free layer magnetization. When the first current is driven through the magnetic element and the second current is provided, the combination sets the pinned layer magnetization direction. In one aspect, the pinned layer magnetization is set by heating the AFM layer to approximately at or above the blocking temperature. In order to configure the logic cell, an initial direction for the free layer magnetization is also set.
摘要翻译：磁逻辑单元包括具有钉扎层，自由层和间隔层的磁性元件。被钉扎和自由层具有钉扎和自由层磁化。间隔层位于固定层和自由层之间。在一个方面，磁逻辑单元包括电连接到磁性元件的第一配置线，并且电连接第一电流和第二配置线，其与磁性元件和第一配置线绝缘并且承载第二电流。单独的第一或第二电流不能切换自由层磁化。第一和第二电流一起可以切换自由层的磁化。当第一电流被驱动通过磁性元件并且提供第二电流时，组合设置钉扎层的磁化方向。在一个方面，通过将AFM层加热到大约等于或高于阻挡温度来设定钉扎层的磁化强度。为了配置逻辑单元，还设置了自由层磁化的初始方向。

140. 发明申请

US20050180202A1 Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer 有权
标题翻译：利用自旋转移提供磁性元件的热辅助切换的方法和系统
公开(公告)号：US20050180202A1
公开(公告)日：2005-08-18
申请号：US10778735
申请日：2004-02-13
申请人： Yiming Huai , Mahendra Pakala
发明人： Yiming Huai , Mahendra Pakala
IPC分类号： G11C11/14 , G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1675
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, free, and heat assisted switching layers. The spacer layer resides between the pinned and free layers. The free layer resides between the spacer and heat assisted switching layers. The heat assisted switching layer improves thermal stability of the free layer when the free layer is not being switched, preferably by exchange coupling with the free layer. The free layer is switched using spin transfer when a write current is passed through the magnetic element. The write current preferably also heats the magnetic element to reduce the stabilization of the free layer provided by the heat assisted switching layer. In another aspect, the magnetic element also includes a second free layer, a second, nonmagnetic spacer layer, and a second pinned layer. The heat assisted switching layer resides between the two free layers, which are magnetostatically coupled. The second spacer layer resides between the second free and second pinned layers.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔件，自由和热辅助开关层。间隔层位于固定层和自由层之间。自由层位于间隔件和热辅助切换层之间。当自由层未被切换时，优选通过与自由层的交换耦合，热辅助切换层提高自由层的热稳定性。当写入电流通过磁性元件时，使用自旋转移来切换自由层。写入电流优选还加热磁性元件以减少由热辅助切换层提供的自由层的稳定性。在另一方面，磁性元件还包括第二自由层，第二非磁性间隔层和第二固定层。热辅助切换层位于两个自由层之间，这两个自由层是静磁耦合的。第二间隔层位于第二自由和第二被钉扎层之间。

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