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131. 发明授权

US08441185B2 Semiconductor device with improved pixel arrangement 有权
标题翻译：具有改进的像素布置的半导体器件
公开(公告)号：US08441185B2
公开(公告)日：2013-05-14
申请号：US11545910
申请日：2006-10-11
申请人： Hideaki Kuwabara , Hideto Ohnuma
发明人： Hideaki Kuwabara , Hideto Ohnuma
IPC分类号： H01L29/04 , H01L29/06
CPC分类号： H01L51/56 , H01L27/3241 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L33/36 , H01L51/0011 , H01L51/52 , H01L2251/5338
摘要： As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
摘要翻译：由于与清晰度的改善相关联的像素区域的小型化以及与面积的增加相关联的基板尺寸的增加，由于在蒸发时使用的掩模的精度，弯曲等的缺陷已经变成问题通过使用光掩模或掩模版形成在显示区域和像素电极层附近的像素电极（也称为第一电极）上具有不同厚度的部分，而不增加步骤数具有由衍射光栅图案或半透射膜构成的具有光强度降低功能的辅助图案。

132. 发明授权

US08409966B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08409966B2
公开(公告)日：2013-04-02
申请号：US13177584
申请日：2011-07-07
申请人： Hideto Ohnuma , Shunpei Yamazaki
发明人： Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/76254 , H01L21/302
摘要： A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOT substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A.
摘要翻译：一种方法被证明可以制造具有高产量的SOI衬底，同时可以有效地利用资源。本发明的特征在于重复以下处理A和方法B. 方法A包括用聚簇离子照射半导体晶片的表面以在半导体晶片中形成分离层。然后将半导体晶片和具有绝缘表面的基板彼此重叠并结合，然后进行热处理以在分离层处或周围分离半导体晶片。通过方法A同时获得在具有绝缘表面的基板上具有结晶半导体层的分离晶片和SOT基板。工艺B包括处理用于再利用的分离晶片，其允许分离晶片连续地经受过程A.

133. 发明授权

US08361873B2 Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device 有权
公开(公告)号：US08361873B2
公开(公告)日：2013-01-29
申请号：US12762600
申请日：2010-04-19
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.

134. 发明授权

US08288215B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08288215B2
公开(公告)日：2012-10-16
申请号：US13069468
申请日：2011-03-23
申请人： Hideto Ohnuma , Noritsugu Nomura
发明人： Hideto Ohnuma , Noritsugu Nomura
IPC分类号： H01L21/336
CPC分类号： H01L21/76254 , H01L21/84 , H01L27/1233 , H01L29/78621
摘要： A single crystal semiconductor substrate including an embrittlement layer is attached to a base substrate with an insulating layer interposed therebetween, and the single crystal semiconductor layer is separated at the embrittlement layer by heat treatment; accordingly, a single crystal semiconductor layer is fixed over the base substrate. The single crystal semiconductor layer is irradiated with a laser beam so that the single crystal semiconductor layer is partially melted and then is re-single crystallized, whereby crystal defects are removed. In addition, an island-shaped single crystal semiconductor layer for forming an n-channel transistor is channel-doped using a photomask and then is etched back using the photomask so that the island-shaped single crystal semiconductor layer for forming an n-channel transistor is thinner than the island-shaped single crystal semiconductor layer for forming a p-channel transistor.
摘要翻译：将具有脆化层的单晶半导体基板安装在基板上，其间插入有绝缘层，并且通过热处理在脆化层处分离单晶半导体层; 因此，单晶半导体层固定在基底基板上。用激光束照射单晶半导体层，使得单晶半导体层部分熔融，然后重新单晶化，从而除去晶体缺陷。此外，用于形成n沟道晶体管的岛状单晶半导体层使用光掩模进行沟道掺杂，然后使用光掩模进行回蚀，从而形成用于形成n沟道晶体管的岛状单晶半导体层比用于形成p沟道晶体管的岛状单晶半导体层薄。

135. 发明授权

US08236630B2 Manufacturing method of semiconductor device, semiconductor device, and electronic device 有权
标题翻译：半导体器件，半导体器件和电子器件的制造方法
公开(公告)号：US08236630B2
公开(公告)日：2012-08-07
申请号：US12230331
申请日：2008-08-27
申请人： Hideto Ohnuma , Shunpei Yamazaki
发明人： Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L21/84 , H01L27/12 , H01L29/045
摘要： An embrittlement layer is formed in a single crystal semiconductor substrate having a (110) plane as a main surface by irradiation of the main surface with ions, and an insulating layer is formed over the main surface of the single crystal semiconductor substrate. The insulating layer and a substrate having an insulating surface are bonded, and the single crystal semiconductor substrate is separated along the embrittlement layer to provide a single crystal semiconductor layer having the (110) plane as a main surface over the substrate having the insulating surface. Then, an n-channel transistor and a p-channel transistor are formed so as to each have a axis of the single crystal semiconductor layer in a channel length direction.
摘要翻译：在具有（110）面作为主表面的单晶半导体衬底中，通过用离子照射主表面，形成脆化层，并且在单晶半导体衬底的主表面上形成绝缘层。绝缘层和具有绝缘表面的基板接合，并且沿着脆化层分离单晶半导体基板，以在具有绝缘表面的基板上提供具有（110）面作为主表面的单晶半导体层。然后，形成n沟道晶体管和p沟道晶体管，使其在沟道长度方向上各自具有单晶半导体层的<110'轴。

136. 发明授权

US08198165B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08198165B2
公开(公告)日：2012-06-12
申请号：US13222286
申请日：2011-08-31
申请人： Hideto Ohnuma
发明人： Hideto Ohnuma
IPC分类号： H01L21/336
CPC分类号： H01L29/66772 , H01L29/41783 , H01L29/6675 , H01L29/78618 , H01L29/78681
摘要： In a semiconductor device having a raised source and drain structure, in forming a raised region by etching, etching of an island-like semiconductor film which is an active layer is inhibited. In a method for manufacturing a semiconductor device, an insulating film is formed by oxidizing or nitriding the surface of an island-like semiconductor film, a semiconductor film is formed on a region which is a part of the insulating film, a gate electrode is formed over the insulating film, an impurity element imparting one conductivity type is added to the island-like semiconductor film and the semiconductor film using the gate electrode as a mask, the impurity element is activated by heating the island-like semiconductor film and the semiconductor film, and the part of the insulating film between the island-like semiconductor film and the semiconductor film disappears by heating the island-like semiconductor film and the semiconductor film.
摘要翻译：在具有升高的源极和漏极结构的半导体器件中，通过蚀刻形成凸起区域时，抑制作为有源层的岛状半导体膜的蚀刻。在制造半导体器件的方法中，通过对岛状半导体膜的表面进行氧化或氮化来形成绝缘膜，在作为绝缘膜的一部分的区域上形成半导体膜，形成栅电极在绝缘膜上，使用栅极电极作为掩模将岛状半导体膜和半导体膜添加到赋予一种导电类型的杂质元素，通过加热岛状半导体膜和半导体膜来激活杂质元素并且岛状半导体膜与半导体膜之间的绝缘膜的一部分通过加热岛状半导体膜和半导体膜而消失。

137. 发明授权

US08119490B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08119490B2
公开(公告)日：2012-02-21
申请号：US12352176
申请日：2009-01-12
申请人： Hideto Ohnuma , Shunpei Yamazaki
发明人： Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/331
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A semiconductor substrate and a base substrate made from an insulator are prepared; an oxide film containing a chlorine atom is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form an embrittled region at a predetermined depth from a surface of the semiconductor substrate; plasma treatment of the oxide film is performed by applying a bias voltage; a surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other to bond a surface of the oxide film and the surface of the base substrate to each other; and heat treatment is performed to cause separation along the embrittled region after bonding the surface of the oxide film and the surface of the base substrate to each other, thereby forming a semiconductor film over the base substrate with the oxide film interposed therebetween.
摘要翻译：制备由绝缘体制成的半导体衬底和基底衬底; 在半导体衬底上形成含有氯原子的氧化膜; 半导体衬底通过氧化膜被加速的离子照射，以在半导体衬底的表面形成预定深度的脆化区域; 通过施加偏置电压来进行氧化膜的等离子体处理; 半导体衬底的表面和基底衬底的表面彼此相对设置，以将氧化物膜的表面和基底衬底的表面彼此粘合; 并且在将氧化膜的表面和基板的表面彼此接合之后，进行热处理以使脆化区域分离，从而在基底基板上形成半导体膜，氧化膜插入其间。

138. 发明授权

US08053145B2 Method for manufacturing holographic recording medium and method for manufacturing semiconductor device 有权
标题翻译：全息记录介质的制造方法及半导体装置的制造方法
公开(公告)号：US08053145B2
公开(公告)日：2011-11-08
申请号：US11802801
申请日：2007-05-25
申请人： Hideto Ohnuma
发明人： Hideto Ohnuma
IPC分类号： G03H1/02
CPC分类号： G03H1/0005 , G03H2001/0094 , G03H2223/12 , H01L21/268 , H01L27/1214 , H01L27/1288
摘要： To provide a method for manufacturing a holographic recording medium and a method for manufacturing a semiconductor device, by which effects of distortion or irregularities of the surface of an exposure object can be reduced. The method includes the steps of: splitting a laser beam emitted from a laser oscillator into a first laser beam and a second laser beam, and forming a fringe pattern in a holographic recording medium by illuminating the holographic recording medium with the first laser beam through a mask and illuminating the holographic recording medium with the second laser beam. The mask is a substrate having a light-shielding film formed over its surface.
摘要翻译：提供一种制造全息记录介质的方法和一种制造半导体器件的方法，通过该方法可以减少曝光对象表面的变形或不规则性的影响。该方法包括以下步骤：将从激光振荡器发射的激光束分成第一激光束和第二激光束，并且通过用第一激光束照射全息记录介质，在全息记录介质中形成条纹图案用第二激光束掩模和照射全息记录介质。掩模是在其表面上形成有遮光膜的基板。

139. 发明授权

US08034694B2 SOI substrate, method for manufacturing the same, and semiconductor device 有权
标题翻译： SOI衬底，其制造方法和半导体器件
公开(公告)号：US08034694B2
公开(公告)日：2011-10-11
申请号：US12073741
申请日：2008-03-10
申请人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
发明人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
IPC分类号： H01L21/30 , H01L21/46 , H01L21/322
CPC分类号： H01L21/76254 , H01L21/84
摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
摘要翻译：提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。提供了使用这种SOI衬底的半导体器件。在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

140. 发明授权

US08030169B2 SOI substrate and manufacturing method thereof 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US08030169B2
公开(公告)日：2011-10-04
申请号：US12497720
申请日：2009-07-06
申请人： Tetsuya Kakehata , Hideto Ohnuma , Yoshiaki Yamamoto , Kenichiro Makino
发明人： Tetsuya Kakehata , Hideto Ohnuma , Yoshiaki Yamamoto , Kenichiro Makino
IPC分类号： H01L21/762
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译：本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

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