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    • 133. 发明授权
    • USB charger circuit
    • USB充电器电路
    • US08072186B2
    • 2011-12-06
    • US12058728
    • 2008-03-30
    • Shih-Yuan WangYung-Hsin ChiangYu-Ming Hsu
    • Shih-Yuan WangYung-Hsin ChiangYu-Ming Hsu
    • H02J7/04
    • H02M3/155H02J7/0052H02J2007/0059
    • A USB charger circuit includes at least a converter, a control circuitry, a first resistor, a second resistor, an error amplifier, a sense resistor and a diode. The converter has a transistor. The control circuitry is coupled to the transistor. The control circuitry is used for producing a drive signal to the transistor. The first resistor is connected between the output node of the converter and a first node. The second resistor is connected between the first node and a second node. The error amplifier is coupled to receive a voltage divided by the first resistor and the second resistor to compare to a reference voltage. The sense resistor is connected between the second node and ground. The diode is connected between the output node of the converter and a first node.
    • USB充电器电路至少包括转换器,控制电路,第一电阻器,第二电阻器,误差放大器,检测电阻器和二极管。 该转换器有一个晶体管。 控制电路耦合到晶体管。 控制电路用于产生到晶体管的驱动信号。 第一个电阻连接在转换器的输出节点和第一个节点之间。 第二电阻器连接在第一节点和第二节点之间。 误差放大器被耦合以接收由第一电阻器和第二电阻器分压的电压以与参考电压进行比较。 感测电阻连接在第二节点和地之间。 二极管连接在转换器的输出节点和第一个节点之间。
    • 137. 发明申请
    • ARRAYS, SYSTEM AND METHOD FOR BI-DIRECTIONAL DATA TRANSMISSION
    • 用于双向数据传输的阵列,系统和方法
    • US20110058817A1
    • 2011-03-10
    • US12991107
    • 2008-05-07
    • Huei Pei KuoRobert G. WalmsleyShih-Yuan Wang
    • Huei Pei KuoRobert G. WalmsleyShih-Yuan Wang
    • H04B10/00
    • H04B10/803
    • A system for bi-directional data transmission includes a first array coupled to a first subsystem and a second array coupled to a second subsystem. The first array includes a first plurality of transmitters that produce first optical signals that are transmitted through free space, and a first plurality of receivers. The second array includes a second plurality of transmitters that produce second optical signals that are transmitted through free space to the first plurality of receivers, and a second plurality of receivers that is configured to receive the first optical signals. An image-forming apparatus is operatively positioned between the first and second arrays and is configured to concurrently form an image of the first plurality of transmitters on the second plurality of receivers and an image of the second plurality of transmitters on the first plurality of receivers.
    • 用于双向数据传输的系统包括耦合到第一子系统的第一阵列和耦合到第二子系统的第二阵列。 第一阵列包括产生通过自由空间传输的第一光信号的第一多个发射机和第一多个接收机。 第二阵列包括第二多个发射机,其产生通过自由空间传输到第一多个接收机的第二光信号,以及被配置为接收第一光信号的第二多个接收机。 图像形成装置可操作地定位在第一和第二阵列之间,并且被配置为同时形成第二多个接收机上的第一多个发射机的图像和第一多个接收机上的第二多个发射机的图像。
    • 139. 发明申请
    • Metamaterial Inclusion Structure and Method
    • 超材料包容结构与方法
    • US20100086272A1
    • 2010-04-08
    • US12245612
    • 2008-10-03
    • Jingjing LiShih-Yuan WangWei Wu
    • Jingjing LiShih-Yuan WangWei Wu
    • G02B1/00G02B6/10
    • G02B6/1226B82Y20/00G02B1/007G02F1/09G02F2202/30G02F2203/10G02F2203/15
    • A metamaterial inclusion structure (MIS), a metamaterial and a method of producing an optical magnetic response employ interspersed plasmonic and dielectric materials. The MIS includes first petals of a plasmonic material and second petals of a dielectric material that alternate at a surface and along a periphery of the MIS. The MIS exhibits the magnetic resonance when illuminated by an optical signal at an optical wavelength. The optical signal has a magnetic field component that is parallel with an interface between the first petals and the second petals. The metamaterial includes a plurality of the MIS arranged in an array and provides an optical magnetic susceptibility at the optical wavelength. The method forms the MIS with the alternating petals and includes illuminating the MIS with the optical signal.
    • 超材料夹层结构(MIS),超材料和产生光磁响应的方法采用散射等离子体和介电材料。 MIS包括等离子体激元材料的第一瓣和电介质材料的第二瓣,其在MIS的表面和周边交替。 当由光学波长的光信号照明时,MIS显示磁共振。 光信号具有与第一瓣和第二瓣之间的界面平行的磁场分量。 超材料包括排列成阵列的多个MIS,并且在光波长处提供光学磁化率。 该方法与交替的花瓣形成MIS,并且包括用光信号照射MIS。
    • 140. 发明授权
    • Nanowire device with (111) vertical sidewalls and method of fabrication
    • 具有(111)垂直侧壁的纳米线器件和制造方法
    • US07692179B2
    • 2010-04-06
    • US10888628
    • 2004-07-09
    • M. Saif IslamYong ChenShih-Yuan WangR. Stanley Williams
    • M. Saif IslamYong ChenShih-Yuan WangR. Stanley Williams
    • H01L29/06
    • H01L27/1203B82Y10/00G11C2213/81H01L29/045H01L29/0665H01L29/0673H01L29/861
    • A nano-scale device and method of fabrication provide a nanowire having (111) vertical sidewalls. The nano-scale device includes a semiconductor-on-insulator substrate polished in a [110] direction, the nanowire, and an electrical contact at opposite ends of the nanowire. The method includes wet etching a semiconductor layer of the semiconductor-on-insulator substrate to form the nanowire extending between a pair of islands in the semiconductor layer. The method further includes depositing an electrically conductive material on the pair of islands to form the electrical contacts. A nano-pn diode includes the nanowire as a first nano-electrode, a pn-junction vertically stacked on the nanowire, and a second nano-electrode on a (110) horizontal planar end of the pn-junction. The nano-pn diode may be fabricated in an array of the diodes on the semiconductor-on-insulator substrate.
    • 纳米级器件和制造方法提供具有(111)垂直侧壁的纳米线。 纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底,纳米线和在纳米线的相对端的电接触。 该方法包括湿式蚀刻绝缘体上半导体衬底的半导体层,以形成在半导体层中的一对岛之间延伸的纳米线。 该方法还包括在一对岛上沉积导电材料以形成电触头。 纳米pn二极管包括纳米线作为第一纳米电极,垂直堆叠在纳米线上的pn结,以及在pn结的(110)水平平面端上的第二纳米电极。 可以在绝缘体上半导体衬底上的二极管的阵列中制造纳米pn二极管。