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    • 131. 发明申请
    • PRINTED CIRCUIT BOARD INCLUDING EMBEDDED CAPACITORS AND METHOD OF MANUFACTURING THE SAME
    • 印刷电路板,包括嵌入式电容器及其制造方法
    • US20070240303A1
    • 2007-10-18
    • US11670463
    • 2007-02-02
    • Jin KimMin KimJun OhTae Kim
    • Jin KimMin KimJun OhTae Kim
    • H01R43/00H05K1/00
    • H05K1/162H05K1/0373H05K3/4602H05K3/4623H05K3/4688H05K2201/0209H05K2201/09536H05K2201/09672Y10T29/435Y10T29/49126Y10T29/4913Y10T29/49155Y10T29/49165
    • Disclosed herein is a printed circuit board including embedded capacitors, composed of a polymer condenser laminate including a plurality of polymer condenser layers, each of which has a polymer sheet and a conductor pattern formed on the polymer sheet, and a via hole for interlayer connection therethrough, and a circuit layer formed on either surface or both surfaces of the polymer condenser laminate and having a circuit pattern and a via hole for interlayer connection therethrough. The printed circuit board of the current invention has higher capacitance density per unit area than conventional embedded capacitor printed circuit boards, whereby capacitors having various capacitance values, such as multilayered ceramic capacitors having high capacitance, can be embedded in the printed circuit board, instead of being mounted thereon. Also, a method of manufacturing the printed circuit board including embedded capacitors is provided.
    • 本发明公开了一种印刷电路板,其包括嵌入式电容器,其由聚合物冷凝器层压体构成,聚合物冷凝层压板包括多个聚合物聚合物层,每个聚合物聚合物层具有形成在聚合物片上的聚合物片和导体图案,以及用于层间连接的通孔 以及形成在聚合物冷凝层叠体的任一表面或两个表面上的电路层,并且具有电路图案和用于通过其进行层间连接的通孔。 本发明的印刷电路板比传统的嵌入式电容器印刷电路板具有更高的每单位面积的电容密度,由此具有各种电容值的电容器,例如具有高电容的多层陶瓷电容器可以嵌入印刷电路板中,而不是 安装在其上。 此外,提供了一种制造包括嵌入式电容器的印刷电路板的方法。
    • 134. 发明申请
    • Organic electroluminescence display device and method of fabricating the same
    • 有机电致发光显示装置及其制造方法
    • US20070159076A1
    • 2007-07-12
    • US11641002
    • 2006-12-19
    • Jae ParkKwang HwangJong ParkHee ChoiSang YuJin Kim
    • Jae ParkKwang HwangJong ParkHee ChoiSang YuJin Kim
    • H01J1/62H01J63/04
    • H01L27/3276H01L27/3251
    • Provided are an organic electroluminescence display device and method of fabricating the same. An organic electroluminescence display device according to the present invention includes a first substrate; a plurality of data lines arranged in a first direction on the first substrate; a plurality of gate lines arranged in a second direction on the first substrate; a plurality of pixel regions defined by the gate lines and the data lines, wherein a first pixel line is defined as a line of the pixel regions arranged in the first direction and a second pixel line is defined as a line of the pixel regions arranged in the second direction; a thin film transistor in each pixel region; a plurality of first connecting lines electrically connecting the thin film transistors of the first pixel lines with each other; and a second connecting line electrically connecting the thin film transistor of at least one of the second pixel lines.
    • 提供一种有机电致发光显示装置及其制造方法。 根据本发明的有机电致发光显示装置包括第一基板; 在第一基板上沿第一方向布置的多条数据线; 在所述第一基板上沿第二方向布置的多个栅极线; 由栅极线和数据线限定的多个像素区域,其中第一像素线被定义为沿第一方向布置的像素区域的线,而第二像素线被定义为布置在其中的像素区域的线 第二个方向 每个像素区域中的薄膜晶体管; 将第一像素线的薄膜晶体管彼此电连接的多个第一连接线; 以及第二连接线,电连接至少一个第二像素线的薄膜晶体管。
    • 135. 发明申请
    • Method for manufacturing a bipolar transisstor
    • 制造双极性跨阻器的方法
    • US20070148889A1
    • 2007-06-28
    • US11646967
    • 2006-12-27
    • Jin KimSeok Ko
    • Jin KimSeok Ko
    • H01L21/331
    • H01L29/66272H01L29/0804H01L29/732
    • Disclosed is a method for manufacturing a bipolar transistor. The method includes the steps of forming a well area, which is doped with a first conductive type material, on a semiconductor substrate, forming a base area, which is doped with the first conductive type material, by performing an ion implantation process with respect to the well area, forming an emitter area and a collector area, which are doped with a second conductive type material, by performing an ion implantation process with respect to the well area formed with the base area, and forming a silicide layer on an upper part of the semiconductor substrate except for the emitter area and the collector area.
    • 公开了一种制造双极晶体管的方法。 该方法包括以下步骤:在半导体衬底上形成掺杂有第一导电类型材料的阱区,通过对第一导电类型材料进行离子注入工艺,形成掺杂有第一导电类型材料的基极区域 通过对形成有所述基极区域的阱区域进行离子注入工艺,形成掺杂有第二导电类型材料的发射极区域和集电极区域,并且在上部形成硅化物层 的除了发射极区域和集电极区域之外的半导体衬底。