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131. 发明授权

US06580114B1 Processing methods of forming a capacitor, and capacitor construction 有权
标题翻译：形成电容器和电容器结构的加工方法
公开(公告)号：US06580114B1
公开(公告)日：2003-06-17
申请号：US09497935
申请日：2000-02-04
申请人： Thomas M Graettinger , Paul J. Schuele , Pierre C. Fazan , Li Li , Zhiqiang Wu , Kunal R. Parekh , Thomas Arthur Figura
发明人： Thomas M Graettinger , Paul J. Schuele , Pierre C. Fazan , Li Li , Zhiqiang Wu , Kunal R. Parekh , Thomas Arthur Figura
IPC分类号： H01L27108
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/84
摘要： Capacitors and methods of forming capacitors are described. According to one implementation, a capacitor opening is formed over a substrate node location. Electrically conductive material is subsequently formed within the capacitor opening and makes an electrical connection with the node location. A protuberant insulative structure is formed within the capacitor opening and includes a lateral outer surface at least a portion of which is supported by and extends elevationally below adjacent conductive material. First and second capacitor plates and a dielectric layer therebetween are formed within the capacitor opening and supported by the protuberant structure. In one aspect, the conductive material is formed to occupy less than all of the capacitor opening and to leave a void therewithin, with the protuberant structure substantially, if not completely filling in the void. In another aspect, the conductive material is formed to occupy less than all of the capacitor opening and to leave a void therewithin, with the protuberant structure only partially filling in the void to provide a tubular structure.
摘要翻译：描述形成电容器的电容器和方法。根据一个实施方案，在衬底节点位置上形成电容器开口。随后在电容器开口内形成导电材料，并与节点位置进行电连接。在电容器开口内形成突出的绝缘结构，并且包括一个侧面外表面，其外表面的至少一部分由邻近的导电材料支撑并向下垂直延伸。第一和第二电容器板及其之间的电介质层形成在电容器开口内并由突出结构支撑。在一个方面，导电材料被形成为占据小于全部电容器开口并且在其中留下空隙，其中突起结构基本上如果不是完全填充在空隙中。另一方面，导电材料被形成为占据小于全部电容器开口并且在其中留下空隙，其中突出结构仅部分地填充在空隙中以提供管状结构。

132. 发明授权

US06495471B2 Etching process using a buffer layer 有权
标题翻译：蚀刻工艺使用缓冲层
公开(公告)号：US06495471B2
公开(公告)日：2002-12-17
申请号：US09785728
申请日：2001-02-16
申请人： Li Li , Zhiqiang Wu , Kunal R. Parekh
发明人： Li Li , Zhiqiang Wu , Kunal R. Parekh
IPC分类号： H01L2100
CPC分类号： H01L21/76802 , H01L21/31111 , H01L21/76831 , H01L21/76841 , H01L21/76897
摘要： The present invention is directed toward building a microelectronic device in which a semiconductor substrate has thereon an etch buffer layer used in a processing method in which the buffer layer will act as an etch uniformity aid. In a method of making the microelectronic device, a semiconductor substrate is covered with an etch buffer layer and with an insulative layer. A first etch is performed by patterning and etching through a mask. The first etch penetrates the insulative layer, forms a cavity therein, and is selective to the buffer layer so as to expose the buffer layer. A second etch is performed that is selective to the insulative layer and the semiconductor substrate, and is not selective to the buffer layer. The buffer layer can be an insulative material of a type other than the material of the insulative layer or the buffer layer can also be of a conductive material. Where the buffer layer is of a conductive layer, the effect of the second etch is that the insulative layer is substantially undercut due to the etching of the buffer layer and due to selectivity to all other etch-exposed structures upon the semiconductor substrate. The undercut leaves a laterally-oriented second cavity within which lateral surfaces of the buffer layer are exposed. Following the second etch, a method of covering the laterally exposed surfaces of the buffer layer, exposed by the undercut, is chosen in order to isolate the remaining laterally exposed surfaces of the buffer layer. These methods include reflowing the insulative layer to cover the laterally exposed surfaces of the buffer layer, and forming a liner layer in the cavity to cover the laterally exposed surfaces of the buffer layer.
摘要翻译：本发明涉及构建其中半导体衬底上具有用于缓冲层将用作蚀刻均匀性辅助的处理方法中的蚀刻缓冲层的微电子器件。在制造微电子器件的方法中，用蚀刻缓冲层和绝缘层覆盖半导体衬底。通过掩模进行图案化和蚀刻来进行第一蚀刻。第一蚀刻穿透绝缘层，在其中形成空腔，并且对缓冲层是选择性的，以便露出缓冲层。执行对绝缘层和半导体衬底具有选择性的第二蚀刻，并且对缓冲层不是选择性的。缓冲层可以是除了绝缘层的材料以外的类型的绝缘材料，或者缓冲层也可以是导电材料。在缓冲层是导电层的情况下，第二蚀刻的效果是由于缓冲层的蚀刻以及由于对半导体衬底上的所有其它蚀刻暴露结构的选择性而导致的绝缘层基本上被切下。底切留下横向定向的第二腔，其中缓冲层的侧表面露出。在第二蚀刻之后，选择覆盖由底切暴露的缓冲层的横向暴露的表面的方法，以便隔离缓冲层的剩余横向暴露的表面。这些方法包括回流绝缘层以覆盖缓冲层的横向暴露的表面，以及在空腔中形成衬层以覆盖缓冲层的横向暴露的表面。

133. 发明授权

US06472260B2 Methods of forming field effect transistors and related field effect transistor constructions 有权
标题翻译：形成场效应晶体管和相关场效应晶体管结构的方法
公开(公告)号：US06472260B2
公开(公告)日：2002-10-29
申请号：US09999885
申请日：2001-10-31
申请人： Zhiqiang Wu , Paul Hatab
发明人： Zhiqiang Wu , Paul Hatab
IPC分类号： H01L21336
CPC分类号： H01L29/66583 , H01L29/1045 , H01L29/105 , H01L29/41775 , H01L29/66537 , H01L29/66553 , H01L29/66606 , H01L29/7833 , Y10S257/917
摘要： Methods of forming field effect transistors and related field effect transistor constructions are described. A masking layer is formed over a semiconductive substrate and an opening having sidewalls is formed therethrough. The opening defines a substrate area over which a field effect transistor gate is to be formed. A dopant of a first conductivity type is provided through the opening and into the substrate. Sidewall spacers are formed over respective sidewalls of the opening. Enhancement dopant of a second conductivity type which is different from the first conductivity type is provided through the opening and into the substrate. A transistor gate is formed within the opening proximate the sidewall spacers, and source/drain regions of the second conductivity type are diffused into the substrate operably proximate the transistor gate. The first conductivity type dopant forms a halo region is proximate the source/drain regions and lightly doped drain (LDD) regions for the transistor.
摘要翻译：描述形成场效应晶体管和相关场效应晶体管结构的方法。在半导体衬底上形成掩模层，并且通过其形成具有侧壁的开口。开口限定了要在其上形成场效应晶体管栅极的衬底区域。通过开口提供第一导电类型的掺杂剂并进入衬底。侧壁间隔件形成在开口的相应侧壁上。通过开口和衬底提供与第一导电类型不同的第二导电类型的增强掺杂剂。晶体管栅极形成在靠近侧壁间隔物的开口内，并且第二导电类型的源极/漏极区域可操作地在晶体管栅极附近扩散到衬底中。形成光晕区的第一导电型掺杂物邻近晶体管的源极/漏极区域和轻掺杂漏极（LDD）区域。

134. 发明授权

US06461967B2 Material removal method for forming a structure 有权
标题翻译：用于形成结构的材料去除方法
公开(公告)号：US06461967B2
公开(公告)日：2002-10-08
申请号：US09907296
申请日：2001-07-16
申请人： Zhiqiang Wu , Li Li , Thomas A. Figura , Kunal R. Parekh , Pai-Hung Pan , Alan R. Reinberg , Kin F. Ma
发明人： Zhiqiang Wu , Li Li , Thomas A. Figura , Kunal R. Parekh , Pai-Hung Pan , Alan R. Reinberg , Kin F. Ma
IPC分类号： H01L2100
CPC分类号： H01L27/10852 , H01L21/2815 , H01L21/28525 , H01L21/30608 , H01L21/32134 , H01L21/76232 , H01L21/76237 , H01L21/7624 , H01L21/76838 , H01L21/76897 , H01L27/10817 , H01L28/60 , H01L29/66492 , H01L29/66575
摘要： Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the material on a semiconductor substrate. The material, which has uniform stress therein, is then masked, and the stress in a portion of the material is reduced, such as by implanting ions into an unmasked portion. The mask is removed, and the high stress masked portion of the material is selectively removed, preferably by an etching process. The low stress portion of the material remains and forms a shaped structure. One preferred selective etching process uses a basic etchant. The various methods are used to form raised shaped structures, shaped openings, polysilicon plugs, capacitor storage nodes, surround-gate transistors, free-standing walls, interconnect lines, trench capacitors, and trench isolation regions.
摘要翻译：公开了用于从具有对材料的低应力部分选择性的材料去除工艺从含硅和/或含锗材料形成成形结构的方法。通常，该方法最初在半导体衬底上提供一层材料。然后，其中具有均匀应力的材料被掩蔽，并且材料的一部分中的应力例如通过将离子注入未掩模部分中而减少。去除掩模，并且优选通过蚀刻工艺选择性地去除材料的高应力掩蔽部分。材料的低应力部分保留并形成成形结构。一种优选的选择性蚀刻方法使用基本蚀刻剂。各种方法用于形成凸起形状的结构，成形开口，多晶硅插塞，电容器存储节点，环绕栅极晶体管，独立壁，互连线，沟槽电容器和沟槽隔离区域。

135. 发明授权

US06444572B1 Semiconductor processing methods of forming a contact opening 有权
公开(公告)号：US06444572B1
公开(公告)日：2002-09-03
申请号：US09862229
申请日：2001-05-21
申请人： Zhiqiang Wu , Alan R. Reinberg , Manny Ma
发明人： Zhiqiang Wu , Alan R. Reinberg , Manny Ma
IPC分类号： H01L21302
摘要： The invention provides methods for forming contact openings to a substrate location with which electrical connection is desired. According to one aspect, a multi-level layer comprising masking material or photoresist is formed atop an electrically conductive substrate surface and defines a mask opening through which a contact opening is to be formed to an elevationally lower substrate location. A single layer of photoresist is patterned to form an elevationally thicker first layer immediately laterally adjacent the mask opening than a second layer which is formed laterally outward of the first layer. The electrically conductive substrate surface is etched through the mask opening to form the contact opening. The photoresist second layer is removed and the conductive substrate surface is etched to form a portion of an outer conductive component. Thereafter, conductive material is formed in the contact opening to electrically connect elevationally separated layers. According to another aspect, a masking material layer comprises a bi-level profile having two different layer elevational thicknesses, the greater of which being disposed immediately laterally adjacent a contact opening pattern. A contact opening is etched through the substrate outer surface and conductive material is formed therein to electrically connect the substrate location with an outer conductive layer. In a preferred implementation, the masking material layer or photoresist is formed through photolithography using only a single mask. In another implementation, more than one mask is used to define the multi-level or bi-level profile masking material layer. The multi-level masking layer can have more than two levels.

136. 发明授权

US06335246B1 Methods of forming field effect transistors and related field effect transistor constructions 有权
公开(公告)号：US06335246B1
公开(公告)日：2002-01-01
申请号：US09494836
申请日：2000-01-31
申请人： Zhiqiang Wu , Paul Hatab
发明人： Zhiqiang Wu , Paul Hatab
IPC分类号： G01L2356
CPC分类号： H01L29/66583 , H01L29/1045 , H01L29/105 , H01L29/41775 , H01L29/66537 , H01L29/66553 , H01L29/66606 , H01L29/7833 , Y10S257/917
摘要： Methods of forming field effect transistors and related field effect transistor constructions are described. A masking layer is formed over a semiconductive substrate and an opening having sidewalls is formed therethrough. The opening defines a substrate area over which a field effect transistor gate is to be formed. A dopant of a first conductivity type is provided through the opening and into the substrate. Sidewall spacers are formed over respective sidewalls of the opening. Enhancement dopant of a second conductivity type which is different from the first conductivity type is provided through the opening and into the substrate. A transistor gate is formed within the opening proximate the sidewall spacers, and source/drain regions of the second conductivity type are diffused into the substrate operably proximate the transistor gate. The first conductivity type dopant forms a halo region proximate the source/drain regions and lightly doped drain (LDD) regions for the transistor.

137. 发明授权

US06303434B1 Method of forming an electrically conductive structure such as a capacitor 失效
标题翻译：形成诸如电容器的导电结构的方法
公开(公告)号：US06303434B1
公开(公告)日：2001-10-16
申请号：US09510709
申请日：2000-02-22
申请人： Kunal R. Parekh , Zhiqiang Wu , Li Li
发明人： Kunal R. Parekh , Zhiqiang Wu , Li Li
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/82
摘要： A method of making a capacitor comprising providing a space extending between a pair of gate stacks on a semiconductor substrate, the space exposing a charge conducting region on the semiconductor substrate. A BPSG layer is formed over the pair of gate stacks. A hard mask layer comprising alternating layers of doped polysilicon and undoped polysilicon is formed over the BPSG layer during a single deposition cycle of depositing polysilicon. Portions of the hard mask layer and the BPSG layer are selectively removed to form topographical structures extending above the gate stacks and having a trench therebetween. A spacer etch and a contact etch are performed to expose the charge conducting region. A doped polysilicon spacer is formed on the lateral side of each topographical structure. A second group of alternating layers of doped polysilicon and undoped polysilicon is formed over the topographical structures and within the trench. Portions of the hard mask layer and the second group of the alternating layers of doped polysilicon and undoped polysilicon are selectively removed. An etch selective to the doped polysilicon is performed to selectively remove the undoped polysilicon to create a structure with spaced apart doped polysilicon layers. A dielectric layer and an electrically conductive cell plate are formed over the alternating layers of the doped polysilicon and the undoped polysilicon. The semiconductor substrate is heated to diffuse dopant in the doped polysilicon into the undoped polysilicon. The resultant novel capacitor has a fin-like structure extending therefrom which increases the surface area thereof.
摘要翻译：一种制造电容器的方法，包括提供在半导体衬底上的一对栅极堆叠之间延伸的空间，该空间暴露半导体衬底上的电荷传导区域。在一对栅极叠层上形成BPSG层。在沉积多晶硅的单个沉积循环期间，在BPSG层上形成包括掺杂多晶硅和未掺杂多晶硅交替层的硬掩模层。选择性地去除硬掩模层和BPSG层的部分以形成在栅叠层之上延伸并且在它们之间具有沟槽的拓扑结构。执行间隔物蚀刻和接触蚀刻以暴露电荷导电区域。在每个形貌结构的侧面上形成掺杂的多晶硅间隔物。掺杂多晶硅和未掺杂多晶硅的第二组交替层形成在拓扑结构之上和沟槽内。选择性地去除了硬掩模层和掺杂多晶硅和未掺杂多晶硅的交替层的第二组的部分。执行对掺杂多晶硅选择性的蚀刻以选择性地去除未掺杂的多晶硅以产生具有间隔开的掺杂多晶硅层的结构。在掺杂多晶硅和未掺杂多晶硅的交替层上形成介电层和导电单元板。加热半导体衬底以将掺杂多晶硅中的掺杂剂扩散到未掺杂的多晶硅中。所得到的新型电容器具有从其延伸的鳍状结构，其增加其表面积。

138. 发明授权

US06274482B1 Semiconductor processing methods of forming a contact opening 有权
公开(公告)号：US06274482B1
公开(公告)日：2001-08-14
申请号：US09283735
申请日：1999-04-01
申请人： Zhiqiang Wu , Alan R. Reinberg , Manny Ma
发明人： Zhiqiang Wu , Alan R. Reinberg , Manny Ma
IPC分类号： H01L21302
CPC分类号： H01L21/76838 , H01L21/76877
摘要： The invention provides methods for forming contact openings to a substrate location with which electrical connection is desired. According to one aspect, a multi-level layer comprising masking material or photoresist is formed atop an electrically conductive substrate surface and defines a mask opening through which a contact opening is to be formed to an elevationally lower substrate location. A single layer of photoresist is patterned to form an elevationally thicker first layer immediately laterally adjacent the mask opening than a second layer which is formed laterally outward of the first layer. The electrically conductive substrate surface is etched through the mask opening to form the contact opening. The photoresist second layer is removed and the conductive substrate surface is etched to form a portion of an outer conductive component. Thereafter, conductive material is formed in the contact opening to electrically connect elevationally separated layers. According to another aspect, a masking material layer comprises a bi-level profile having two different layer elevational thicknesses, the greater of which being disposed immediately laterally adjacent a contact opening pattern. A contact opening is etched through the substrate outer surface and conductive material is formed therein to electrically connect the substrate location with an outer conductive layer. In a preferred implementation, the masking material layer or photoresist is formed through photolithography using only a single mask. In another implementation, more than one mask is used to define the multi-level or bi-level profile masking material layer. The multi-level masking layer can have more than two levels.

139. 发明授权

US06261964B1 Material removal method for forming a structure 有权
标题翻译：用于形成结构的材料去除方法
公开(公告)号：US06261964B1
公开(公告)日：2001-07-17
申请号：US09205989
申请日：1998-12-04
申请人： Zhiqiang Wu , Li Li , Thomas A. Figura , Kunal R. Parekh , Pai-Hung Pan , Alan R. Reinberg , Kin F. Ma
发明人： Zhiqiang Wu , Li Li , Thomas A. Figura , Kunal R. Parekh , Pai-Hung Pan , Alan R. Reinberg , Kin F. Ma
IPC分类号： H01L2100
CPC分类号： H01L27/10852 , H01L21/2815 , H01L21/28525 , H01L21/30608 , H01L21/32134 , H01L21/76232 , H01L21/76237 , H01L21/7624 , H01L21/76838 , H01L21/76897 , H01L27/10817 , H01L28/60 , H01L29/66492 , H01L29/66575
摘要： Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the material on a semiconductor substrate. The material, which has uniform stress therein, is then masked, and the stress in a portion of the material is reduced, such as by implanting ions into an unmasked portion. The mask is removed, and the high stress masked portion of the material is selectively removed, preferably by an etching process. The low stress portion of the material remains and forms a shaped structure. One preferred selective etching process uses a basic etchant. The various methods are used to form raised shaped structures, shaped openings, polysilicon plugs, capacitor storage nodes, surround-gate transistors, free-standing walls, interconnect lines, trench capacitors, and trench isolation regions.
摘要翻译：公开了用于从具有对材料的低应力部分选择性的材料去除工艺从含硅和/或含锗材料形成成形结构的方法。通常，该方法最初在半导体衬底上提供一层材料。然后，其中具有均匀应力的材料被掩蔽，并且材料的一部分中的应力例如通过将离子注入未掩模部分中而减少。去除掩模，并且优选通过蚀刻工艺选择性地去除材料的高应力掩蔽部分。材料的低应力部分保留并形成成形结构。一种优选的选择性蚀刻方法使用基本蚀刻剂。各种方法用于形成凸起形状的结构，成形开口，多晶硅插塞，电容器存储节点，环绕栅极晶体管，独立壁，互连线，沟槽电容器和沟槽隔离区域。

140. 发明授权

US06215151B1 Methods of forming integrated circuitry and integrated circuitry 有权
标题翻译：形成集成电路和集成电路的方法
公开(公告)号：US06215151B1
公开(公告)日：2001-04-10
申请号：US09255667
申请日：1999-02-23
申请人： Zhiqiang Wu , Luan C. Tran , Robert Kerr , Shubneesh Batra , Rongsheng Yang
发明人： Zhiqiang Wu , Luan C. Tran , Robert Kerr , Shubneesh Batra , Rongsheng Yang
IPC分类号： H01L27148
CPC分类号： H01L21/823807
摘要： Integrated circuitry and methods of forming integrated circuitry are described. In one implementation, a common masking step is utilized to provide source/drain diffusion regions and halo ion implantation or dopant regions relative to the source/drain regions within one well region of a substrate; and well contact diffusion regions within another well region of the substrate. The common masking step preferably defines at least one mask opening over the substrate within which the well contact diffusion region is to be formed, and the mask opening is suitably dimensioned to reduce the amount of halo ion implantation dopant which ultimately reaches the substrate therebelow. According to one aspect, a plurality of mask openings are provided. According to another aspect, a suitably-dimensioned single mask opening is provided. In yet another aspect, a unique well region construction is provided with one or more complementary mask openings which is (are) configured to, in connection with the provision of the halo ion implantation dopant, block the amount of implantation dopant which ultimately reaches the substrate adjacent the well contact diffusion regions. Accordingly, at least some of the well contact diffusion region(s) remain in substantial contact with the well region after the doping of the substrate with the halo ion implantation dopant.
摘要翻译：描述了形成集成电路的集成电路和方法。在一个实现中，利用公共掩模步骤来相对于衬底的一个阱区域内的源极/漏极区域提供源极/漏极扩散区域和晕圈离子注入或掺杂区域; 以及在衬底的另一个阱区域内的良好接触扩散区域。常见的掩蔽步骤优选地限定在其上将要形成阱接触扩散区的衬底上的至少一个掩模开口，并且掩模开口被适当地设定尺寸以减少最终到达衬底的卤素离子注入掺杂剂的量。根据一个方面，提供了多个掩模开口。根据另一方面，提供了适当尺寸的单个掩模开口。在另一方面，独特的井区结构设置有一个或多个互补掩模开口，其被配置为与提供卤素离子注入掺杂剂相结合，阻止最终到达衬底的注入掺杂剂的量邻近阱接触扩散区。因此，在用卤素离子注入掺杂剂掺杂衬底之后，至少一些阱接触扩散区域保持与阱区基本接触。

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