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121. 发明授权

US4332973A High intensity solar cell 失效
标题翻译：高强度太阳能电池
公开(公告)号：US4332973A
公开(公告)日：1982-06-01
申请号：US932903
申请日：1978-08-11
申请人： Bernard L. Sater
发明人： Bernard L. Sater
IPC分类号： H01L27/142 , H01L31/052 , H01L31/0687 , H01L31/04
CPC分类号： H01L31/0687 , H01L31/047 , H01L31/0543 , Y02E10/52 , Y02E10/544
摘要： This invention discloses: (1) A high intensity solar cell; (2) A method of making an array of high intensity solar cells in an economical manner, and (3) A lens system for concentrating incident radiation on to the most responsive region of its structure.
摘要翻译：本发明公开：（1）高强度太阳能电池; （2）以经济的方式制造高强度太阳能电池阵列的方法，以及（3）将入射辐射集中在其结构的最响应区域上的透镜系统。

122. 发明授权

US4128733A Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same 失效
标题翻译：多结镓镓砷化镓砷化镓锗太阳能电池及其制造方法
公开(公告)号：US4128733A
公开(公告)日：1978-12-05
申请号：US864300
申请日：1977-12-27
申请人： Lewis M. Fraas , Kenneth R. Zanio , Ronald C. Knechtli
发明人： Lewis M. Fraas , Kenneth R. Zanio , Ronald C. Knechtli
IPC分类号： H01L31/0687 , H01L31/074 , H01L31/06
CPC分类号： H01L31/0687 , H01L31/074 , Y02E10/544 , Y10S148/056 , Y10S148/065 , Y10S148/11 , Y10S438/933
摘要： The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium arsenide substrate, and the deposition of a layer of germanium establishes a second PN junction in Ge of a different bandgap energy on the other side of the GaAs substrate. The two PN junctions are responsive respectively to different wavelength ranges of solar energy to thus enhance the power output capability of a single wafer (substrate) solar cell. Utilization of the Group IV element germanium, as contrasted to compound semiconductors, simplifies the process control requirements relative to known prior art compound semiconductor processes, and germanium also provides a good crystal lattice match with gallium arsenide and thereby maximizes process yields. This latter feature also minimizes losses caused by the crystal defects associated with the interface between two semiconductors.
摘要翻译：该说明书描述了一种镓砷化镓镓砷化锗 - 锗锗太阳能电池及其制造方法，其中沉积砷化镓铝层在砷化镓衬底的一侧上的一个带隙能量的GaAs中建立第一PN结，以及锗层的沉积在GaAs衬底的另一侧上在不同带隙能的Ge中建立第二PN结。两个PN结分别响应于太阳能的不同波长范围，从而提高单个晶片（衬底）太阳能电池的功率输出能力。与化合物半导体相比，IV族元素锗的利用简化了相对于已知的现有技术化合物半导体工艺的工艺控制要求，并且锗还提供了与砷化镓的良好晶格匹配，从而使工艺产量最大化。后一个特征还使由与两个半导体之间的界面相关联的晶体缺陷引起的损耗最小化。

123. 发明申请

US20230043642A1 PASSIVE COOLING METHOD FOR HIGH CONCENTRATING PHOTOVOLTAIC 有权
公开(公告)号：US20230043642A1
公开(公告)日：2023-02-09
申请号：US17938855
申请日：2022-10-07
申请人： Imam Abdulrahman Bin Faisal University
发明人： Fahad G. AL-AMRI
IPC分类号： H02S40/42 , H02S40/22 , H01L31/0725 , H01L31/054 , H01L31/0687 , H02S20/32
摘要： A method of passive cooling for a high concentrating photovoltaic, the high concentrating photovoltaic, includes a photovoltaic receiver, a parabolic dish reflector and a plurality of thermally conductive heat pipes having a direct thermal contact between the receiver and the reflector to transfer excessive heat. The method includes receiving sunlight by the parabolic dish reflector, reflecting the sunlight towards the photovoltaic receiver that converts the sunlight into electricity and heat, transferring the heat through the thermally conductive heat pipes and absorbing the heat by the reflector serving a dual purpose as a heat sink. A reduction in weight and cost is accomplished by incorporating the flat heat pipes.

124. 发明授权

US11575347B1 Passive cooling method for high concentrating photovoltaic 有权
公开(公告)号：US11575347B1
公开(公告)日：2023-02-07
申请号：US17938855
申请日：2022-10-07
申请人： Imam Abdulrahman Bin Faisal University
发明人： Fahad G. Al-Amri
IPC分类号： H01L31/042 , H02S10/00 , H02S40/20 , H02S40/42 , H02S40/22 , H01L31/0725 , H01L31/054 , H01L31/0687 , H02S20/32
摘要： A method of passive cooling for a high concentrating photovoltaic, the high concentrating photovoltaic, includes a photovoltaic receiver, a parabolic dish reflector and a plurality of thermally conductive heat pipes having a direct thermal contact between the receiver and the reflector to transfer excessive heat. The method includes receiving sunlight by the parabolic dish reflector, reflecting the sunlight towards the photovoltaic receiver that converts the sunlight into electricity and heat, transferring the heat through the thermally conductive heat pipes and absorbing the heat by the reflector serving a dual purpose as a heat sink. A reduction in weight and cost is accomplished by incorporating the flat heat pipes.

125. 发明授权

US11563134B2 Systems and methods for three-terminal tandem solar cells 有权
公开(公告)号：US11563134B2
公开(公告)日：2023-01-24
申请号：US17379719
申请日：2021-07-19
申请人： California Institute of Technology
发明人： Harry A. Atwater , Phillip R. Jahelka
IPC分类号： H01L31/0725 , H01L31/073 , H01L31/0216 , H01L31/0735 , H01L31/0224 , H01L31/0687 , H01L31/0693
摘要： Systems and methods of three-terminal tandem solar cells are described. Three-terminal metal electrodes can be formed to contact subcells of the tandem solar cell. The three-terminal tandem cell can improve the device efficiency to at least 30%.

126. 发明申请

US20220393056A1 INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS HAVING A PERMANENT SUPPORTING SUBSTRATE 有权
公开(公告)号：US20220393056A1
公开(公告)日：2022-12-08
申请号：US17820509
申请日：2022-08-17
申请人： SOLAERO TECHNOLOGIES CORP.
发明人： Arthur B. Cornfeld , Jeff Steinfeldt
IPC分类号： H01L31/0725 , H01L31/18 , H01L31/0687 , H01L31/0304 , H01L31/048
摘要： A method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.

127. 发明申请

US20220393055A1 MULTIJUNCTION METAMORPHIC SOLAR CELLS 有权
公开(公告)号：US20220393055A1
公开(公告)日：2022-12-08
申请号：US17820465
申请日：2022-08-17
申请人： SolAero Technologies Corp.
发明人： Daniel Derkacs
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/054 , H01L31/18 , H01L31/02 , H01L31/0304 , H01L31/05 , H01L31/0687 , H01L31/078
摘要： A multijunction solar cell including interconnected first and second discrete semiconductor regions disposed adjacent and parallel to each other including first top solar subcell, second (and possibly third) lattice matched middle solar subcells; a graded interlayer adjacent to the last middle solar subcell; and a bottom solar subcell adjacent to said graded interlayer being lattice mismatched with respect to the last middle solar subcell; wherein an opening is provided from the bottom side of the semiconductor body to one or more of the solar subcells so as to allow a discrete electrical connector to be made extending in free space and to electrically connect contact pads on one or more of the solar subcells.

128. 发明授权

US11482636B2 Multijunction solar cells 有权
公开(公告)号：US11482636B2
公开(公告)日：2022-10-25
申请号：US17467160
申请日：2021-09-03
申请人： SolAero Technologies Corp.
发明人： John Hart , Daniel Derkacs , Zachary Bittner , Andrew Espenlaub
IPC分类号： H01L31/0735 , H01L31/0693 , H01L31/065 , H01L31/0687 , H01L31/0725
摘要： A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.

129. 发明申请

US20220246779A1 MULTIJUNCTION SOLAR CELLS 有权
公开(公告)号：US20220246779A1
公开(公告)日：2022-08-04
申请号：US17467160
申请日：2021-09-03
申请人： SolAero Technologies Corp.
发明人： Daniel Derkacs , John Hart , Zachary Bittner , Andrew Colin Espenlaub
IPC分类号： H01L31/0687 , H01L31/0693
摘要： A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.

130. 发明申请

US20220149211A1 MULTIJUNCTION SOLAR CELL ASSEMBLY 有权
公开(公告)号：US20220149211A1
公开(公告)日：2022-05-12
申请号：US17579420
申请日：2022-01-19
申请人： SolAero Technologies Corp.
发明人： DANIEL DERKACS
IPC分类号： H01L31/02 , H01L31/078 , H01L31/0693 , H01L31/0224 , H01L31/0687 , H01L31/18 , H01L31/054 , H01L31/05 , H01L31/0725 , H01L31/0735
摘要： A multijunction solar cell assembly and its method of manufacture including interconnected first and second discreate semiconductor body subassemblies disposed adjacent and parallel to each other, in the sense of the incoming illumination, each semiconductor body subassembly including first top subcell, and possibly third middle subcells and a bottom solar subcell; wherein the interconnected subassemblies form at least a Three junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body with its at least least two junctions and the bottom solar subcell in the second semiconductor body representing the additional junction.

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