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    • 123. 发明申请
    • Wafer handling apparatus and method
    • 晶圆处理装置及方法
    • US20030123958A1
    • 2003-07-03
    • US10307022
    • 2002-11-27
    • Manny SieradzkiNicholas R. White
    • B65G049/07
    • H01L21/67745H01L21/67155H01L21/67778Y10S414/139
    • A high-speed wafer-processing apparatus and method that employs a vacuum chamber having at least two wafer transport robots and a process station. The vacuum chamber interfaces with a number of single-wafer load locks that are loaded and unloaded one wafer at a time by a robot in atmosphere. Four load locks are sized to allow for a gentle vacuum cycling of each wafer without significant pumpdown delays. The robots in the vacuum chamber move wafers sequentially from one of the load locks to a process station for processing and then to another one of the load locks for unloading by the atmospheric robot.
    • 采用具有至少两个晶片传送机器人的真空室和处理站的高速晶片处理设备和方法。 真空室与多个单晶片负载锁相连接,一次由机器人在大气中装载和卸载一片晶片。 四个负载锁的大小可以允许每个晶片的平缓的真空循环,而不会有明显的抽空延迟。 真空室中的机器人将晶片顺序地从一个负载锁移动到处理站进行处理,然后再到另一个负载锁,以便由大气机器人卸载。
    • 129. 发明授权
    • Bellows isolation for index platforms
    • 波纹管隔离指数平台
    • US06551044B1
    • 2003-04-22
    • US09395795
    • 1999-09-14
    • Ronald R. Stevens
    • Ronald R. Stevens
    • B65G4907
    • H01L21/67017H01L21/67126Y10S414/139
    • A loadlock chamber for a semiconductor processing apparatus comprises an index platform or registration plate, a shaft extending through a wall of the chamber to actuate the platform, and a bellows located on the outside of the chamber to isolate the shaft from the external environment. A seal is placed between the bottom of the registration plate and the wall of the chamber so as to isolate the space under the registration plate and within the bellows from the remainder of the chamber when the platform is in a fully lowered position. A gutter is formed in a wall of the chamber below the registration plate to catch particulate matter, such as broken wafer particles. A method of accessing the interior of a loadlock chamber limits exposure of the space within the bellows to the external environment.
    • 一种用于半导体处理设备的负荷锁定室包括一个折射平台或配准板,一个延伸穿过该室的壁以致动该平台的轴,以及一个位于该室外侧的波纹管,以将轴与外部环境隔离开来。 密封件放置在对齐板的底部和室的壁之间,以便当平台处于完全降低的位置时,隔离该对准板下面的空间和波纹管内的空间。 在对准板下方的腔室的壁中形成沟槽以捕获诸如破碎的晶片颗粒的颗粒物质。 访问负载锁定室的内部的方法限制波纹管内的空间暴露于外部环境。
    • 130. 发明授权
    • Substrate handling chamber
    • 基板处理室
    • US06550158B2
    • 2003-04-22
    • US09727736
    • 2000-12-01
    • Allan DoleyDennis GoodwinKenneth O'NeillGerben VrijburgDavid RodriguezRavinder Aggarwal
    • Allan DoleyDennis GoodwinKenneth O'NeillGerben VrijburgDavid RodriguezRavinder Aggarwal
    • F26B300
    • C30B29/14C23C16/4401C23C16/4408C30B25/08Y10S414/139
    • An apparatus and method for reducing particles in reactors. The apparatus includes an enclosure with a wafer handling chamber connected by an isolation gate valve to a processing chamber. Pipes deliver purge gas into the wafer handling chamber to eliminate particles from the enclosure. A pilot operated back pressure regulator regulates the delivery and removal of the purge gas. The apparatus actuates the isolation gate valve in a controlled rate to reduce disturbances from the purge gas entering into the enclosure. A Bernoulli wand is provided for lifting and holding a single semiconductor wafer. A dome loaded regulator actuated by a pilot gas is used to control the ramp rates of gas to the Bernoulli wand. The ramping rates of the Bernoulli wand gas can be controlled by restrictions and check valves in the pilot gas line. The apparatus also utilizes ionizers in the purge gas lines entering the wafer handling chamber and load locks. Through the use of an alpha particle emission source in the purge gas line prior to the load lock and wafer handling chamber, the purged gas molecules are ionized. The ionized gas is conductive and therefore discharges static so that wafers are no longer attracted to each other by electrostatic force. In addition, the apparatus includes means for reducing gas flow turbulence when switching valves within the reactor.
    • 用于还原反应器中的颗粒的装置和方法。 该装置包括具有通过隔离闸阀连接到处理室的晶片处理室的外壳。 管道将净化气体输送到晶片处理室中以消除外壳中的颗粒。 先导操作的背压调节器调节吹扫气体的输送和去除。 该设备以受控的速率驱动隔离闸阀,以减少进入外壳的吹扫气体的干扰。 提供伯努利棒用于提升和保持单个半导体晶片。 使用由先导气体驱动的圆顶加载式调节器来控制伯努利魔杖的气体斜坡速率。 伯努利魔杖气体的斜率可以通过先导气体管线中的限制和止回阀来控制。 该设备还在进入晶片处理室的清洗气体管线和负载锁定中使用电离器。 通过在负载锁定和晶片处理室之前在吹扫气体管线中使用α粒子发射源,将净化的气体分子电离。 电离气体是导电的,因此放电静电,使得晶片不再被静电力彼此吸引。 另外,该设备包括当在反应器内切换阀时减少气流湍流的装置。