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    • 127. 发明授权
    • Semiconductor device including diffusion layer formed in drift region disposed apart from base region
    • 半导体器件包括在与基极区域分离的漂移区域中形成的扩散层
    • US07675111B2
    • 2010-03-09
    • US11455173
    • 2006-06-19
    • Takao Arai
    • Takao Arai
    • H01L29/94
    • H01L29/7813H01L29/0623H01L29/0696H01L29/4238H01L29/66734
    • Aiming at providing a semiconductor device capable of reducing the ON-resistance when voltage smaller than a predetermined value is applied to the base region and the drift region, and capable of increasing the ON-resistance so as to prevent thermal fracture when the voltage is not smaller than the predetermined value, and at providing a method of fabricating such semiconductor device, a P-type diffusion layer 7 is formed in an N-type drift region 2 of a semiconductor device 100, as being apart from a base region 5, wherein the diffusion layer 7 is formed in a region partitioned by lines L each extending from each of the intersections of the boundary B, between the drift region 2 and a base area 5A of the base region 5, and the side faces of a trench 15 surrounding the base area 5A of the base region 5, towards the bottom plane of the drift region 2 right under the base area 5A, while keeping an angle θ2 of 50° between the lines L and the boundary B.
    • 目的在于提供一种能够在小于预定值的电压下降低导通电阻的半导体器件,并且能够增加导通电阻以防止在不存在电压时的热断裂 小于预定值,并且在提供制造这种半导体器件的方法时,在半导体器件100的N型漂移区2中形成P型扩散层7,其与基极区域5分开,其中 扩散层7形成在由边界B的各交叉点在漂移区域2和基底区域5的基底区域5A之间的每个交点延伸的线L以及周围的沟槽15的侧面分隔的区域中 基部区域5的基部区域5A,在基部区域5A的正下方朝向漂移区域2的底部平面,同时在线路L和边界B之间保持角度θ为50°。
    • 128. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20090206376A1
    • 2009-08-20
    • US12333418
    • 2008-12-12
    • Keiji MitaMasao TakahashiTakao Arai
    • Keiji MitaMasao TakahashiTakao Arai
    • H01L29/78
    • H01L29/7322H01L29/735H01L29/8618
    • A conventional semiconductor device has a problem that, when a vertical PNP transistor as a power semiconductor element is used in a saturation region, a leakage current into a substrate is generated. In a semiconductor device of the present invention, two P type diffusion layers as a collector region are formed around an N type diffusion layer as a base region. One of the P type diffusion layers is formed to have a lower impurity concentration and a narrower diffusion width than the other P type diffusion layer. In this structure, when a vertical PNP transistor is turned on, a region where the former P type diffusion layer is formed mainly serves as a parasite current path. Thus, a parasitic transistor constituted of a substrate, an N type buried layer and a P type buried layer is prevented from turning on, and a leakage current into the substrate is prevented.
    • 常规的半导体器件具有以下问题:当在饱和区域中使用作为功率半导体元件的垂直PNP晶体管时,产生进入衬底的漏电流。 在本发明的半导体器件中,以N型扩散层为基底形成作为集电极区域的2个P型扩散层。 P型扩散层中的一个形成为具有比其他P型扩散层更低的杂质浓度和更窄的扩散宽度。 在这种结构中,当垂直PNP晶体管导通时,形成前者P型扩散层的区域主要用作寄生电流路径。 因此,防止由衬底,N型掩埋层和P型掩埋层构成的寄生晶体管导通,并且防止了进入衬底的漏电流。
    • 130. 发明申请
    • Control device for a closure member of a vehicle
    • 用于车辆的关闭构件的控制装置
    • US20070216330A1
    • 2007-09-20
    • US11715812
    • 2007-03-07
    • Takayuki KawakuraNarimitsu KoboriTakao AraiKenichi HiranoMasahiro Fueki
    • Takayuki KawakuraNarimitsu KoboriTakao AraiKenichi HiranoMasahiro Fueki
    • H02P7/00
    • H02H3/006H02H7/0851H02H7/093
    • The control device for a closure member of a vehicle according to the present invention comprises: estimated load calculation means (8b) for obtaining an estimated load from a rotation speed, acceleration, and drive voltage of a DC motor (3) for driving a closure member (9); motor torque calculation means (8b) for calculating a motor torque from the rotation speed and drive voltage of the motor; reference torque calculation means (8f) for calculating a reference torque based on a stationary state of the motor torque; and pinching determination means (8c) for determining a pinching of an object based on the estimated load, motor torque and reference torque, wherein the pinching determination means determines that there is no pinching when at least one of the estimated load and the motor torque is below the reference torque even when the estimated load is greater than a prescribed threshold value.
    • 根据本发明的用于车辆的关闭构件的控制装置包括:估计负载计算装置(8b),用于从用于驱动的​​直流电动机(3)的转速,加速度和驱动电压获得估计负载 封闭构件(9); 用于根据所述电动机的转速和驱动电压计算电动机转矩的电动机转矩计算装置(8b); 用于基于电动机转矩的静止状态来计算基准转矩的参考转矩计算装置(8f); 以及用于基于所估计的负载,电动机转矩和参考转矩来确定对象的夹持的夹持确定装置(8c),其中,所述挤压确定装置确定当所估计的负载和所述电动机转矩中的至少一个时不存在夹紧 即使当估计负载大于规定的阈值时,也低于基准转矩。