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121. 发明申请

US20070108593A1 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效
标题翻译：沸石溶胶及其制备方法，用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US20070108593A1
公开(公告)日：2007-05-17
申请号：US11652297
申请日：2007-01-11
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： C23C16/00 , C07C5/25 , H01L23/12
CPC分类号： H01L21/02126 , C01B39/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.
摘要翻译：本发明提供一种沸石溶胶，其可以通过通常的半导体工艺中使用的方法来形成多孔膜，该多孔膜可以被薄化到预期的厚度，其具有优异的介电性能，粘附性，膜稠度和机械强度，并且可以容易变薄; 用于成膜的组合物; 多孔膜及其形成方法; 以及内部含有该多孔膜的高性能，高可靠性的半导体装置。更具体地说，通过水解和分解由以下通式表示的硅烷化合物制备沸石溶胶：Si（OR 1）4（其中R 1， SUP>表示具有1至4个碳的直链或支链烷基，当存在多于一个R 1时，R 1可以是独立的，并且在结构导向剂和碱性催化剂的存在下在用于形成多孔膜的常规涂布溶液中相同或不同）然后在75℃以下的温度下加热硅烷化合物。使用含有该沸石溶胶的多孔膜形成用组合物。

122. 发明申请

US20070082292A1 Water-soluble material, chemically amplified resist and pattern formation method using the same 审中-公开
标题翻译：水溶性材料，化学放大抗蚀剂和使用其的图案形成方法
公开(公告)号：US20070082292A1
公开(公告)日：2007-04-12
申请号：US11602377
申请日：2006-11-21
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0392 , G03F7/095
摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.
摘要翻译：用于在化学放大抗蚀剂膜上形成水溶性膜的水溶性材料包括水溶性聚合物，酸产生剂和构成用于掺入酸产生剂的包合物的化合物。此外，在图案形成方法中，在基板上形成化学放大抗蚀剂膜，以及由水溶性材料构成的水溶性膜，所述水溶性物质包含水溶性聚合物，酸产生剂和构成包合物的化合物，在抗蚀剂膜上形成并入酸产生剂。此后，通过选择性地照射通过水溶性膜曝光光的抗蚀剂膜来进行图案曝光，使得到的抗蚀剂膜显影并除去水溶性膜。因此，形成由抗蚀剂膜制成的抗蚀剂图案。

123. 发明授权

US07176103B2 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
公开(公告)号：US07176103B2
公开(公告)日：2007-02-13
申请号：US10703854
申请日：2003-11-07
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/76 , C23C16/00
摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

124. 发明申请

US20060281025A1 Chemically amplified resist material and pattern formation method using the same 有权
标题翻译：化学放大抗蚀剂材料和使用其的图案形成方法
公开(公告)号：US20060281025A1
公开(公告)日：2006-12-14
申请号：US11409207
申请日：2006-04-24
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/00
CPC分类号： C08L59/00 , C08L2205/02 , G03F7/0392 , G03F7/2041 , Y10S430/106 , C08L2666/16
摘要： In a pattern formation method, a resist film made of a chemically amplified resist material including a first polymer having hemiacetal or hemiketal is formed on a substrate. Then, with a liquid provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
摘要翻译：在图案形成方法中，在基板上形成由包含半缩醛或半缩醛的第一聚合物的化学放大抗蚀剂材料制成的抗蚀剂膜。然后，通过设置在抗蚀剂膜上的液体，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。在图案曝光之后，抗蚀剂膜被显影以形成由抗蚀剂膜制成的抗蚀剂图案。

125. 发明申请

US20060263719A1 Resist material and pattern formation method using the same 有权
标题翻译：抗蚀材料和图案形成方法使用它
公开(公告)号：US20060263719A1
公开(公告)日：2006-11-23
申请号：US11415158
申请日：2006-05-02
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/00
CPC分类号： G03F7/085 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/12
摘要： A resist film made of a resist material including 4-pentanelactam, that is, hetero cyclic ketone, is formed on a substrate, and subsequently, pattern exposure is performed by irradiating the resist film with exposing light through a mask. Then, the resist film having been subjected to the pattern exposure is developed, thereby forming a resist pattern.
摘要翻译：在基板上形成由包含4-戊内酰胺的抗蚀剂材料（即杂环酮）制成的抗蚀剂膜，随后通过用掩模曝光光照射抗蚀剂膜来进行图案曝光。然后，对经过图案曝光的抗蚀剂膜进行显影，从而形成抗蚀剂图案。

126. 发明申请

US20060163198A1 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US20060163198A1
公开(公告)日：2006-07-27
申请号：US11260385
申请日：2005-10-28
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： C23F1/00 , B44C1/22 , H01L21/302 , H01L21/461
CPC分类号： G03F7/0392 , G03F7/0382 , G03F7/0397 , G03F7/40
摘要： In a pattern formation method, a resist film including a lactone ring is formed on a substrate of silicon oxide. Then, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure so as to form a resist pattern made of the resist film. Subsequently, the lactone ring included in the resist pattern is opened by exposing the resist pattern to an acrylic acid aqueous solution. Thereafter, with the resist pattern where the lactone ring has been opened used as a mask, the substrate is etched, so as to form a recess in a good shape.
摘要翻译：在图案形成方法中，在氧化硅的基板上形成包含内酯环的抗蚀剂膜。然后，通过用曝光来选择性地照射抗蚀剂膜来进行图案曝光，并且在图案曝光之后使抗蚀剂膜显影，以形成由抗蚀剂膜制成的抗蚀剂图案。随后，通过将抗蚀剂图案暴露于丙烯酸水溶液来打开包含在抗蚀剂图案中的内酯环。然后，利用其中已经打开内酯环的抗蚀剂图案作为掩模，蚀刻基板，以形成良好形状的凹部。

127. 发明授权

US06936401B2 Pattern formation material and pattern formation method 失效
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06936401B2
公开(公告)日：2005-08-30
申请号：US10610912
申请日：2003-07-02
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/73
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , Y10S430/115 , Y10S430/12
摘要： The pattern formation material of this invention is a chemically amplified resist material including a polymer whose solubility in a developer is changed in the presence of an acid; an acid generator for generating an acid through irradiation with exposing light; and a base generator for generating a base through irradiation with the exposing light. The base generator is more photosensitive to longer band light of a wavelength longer than extreme UV than to extreme UV when irradiated, as the exposing light, with the extreme UV and the longer band light at equivalent exposure energy.
摘要翻译：本发明的图案形成材料是一种化学放大抗蚀剂材料，其包括在酸存在下在显影剂中的溶解度改变的聚合物; 用于通过照射曝光而产生酸的酸产生器; 以及用于通过照射曝光光而产生基底的基座发生器。基极发生器对于长于超过紫外线的波长的长波段的光线，比照射时的极端紫外线更为敏感，作为曝光光，具有极端的紫外线和较长波段的光线具有相等的曝光能量。

128. 发明申请

US20050164494A1 Method for forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US20050164494A1
公开(公告)日：2005-07-28
申请号：US11090885
申请日：2005-03-28
申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
IPC分类号： G03F7/00 , H01L21/027 , H01L21/312 , H01L21/316 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76808 , H01L21/76817 , H01L21/76828
摘要： A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.
摘要翻译：一种形成半导体器件的方法包括以下步骤：形成由具有流动性的绝缘材料制成的可流动膜; 通过将所述按压部件压靠在所述可流动膜上，通过使按压部件的按压面的凸部转移而在所述可流动膜中形成第一凹部; 通过使所述挤压构件压靠在所述可流动膜上，在第一温度下使所述可流动膜固化，形成具有所述第一凹部的固化膜; 通过在比所述第一温度高的第二温度退火来烧结所述固化膜，形成具有所述第一凹部的燃烧膜; 通过在所述燃烧膜上形成具有用于形成所述第二凹部的开口的掩模，并且通过使用所述掩模来蚀刻所述燃烧膜，形成至少与所述燃烧膜中的所述第一凹部连接的第二凹部; 以及通过用导电膜填充所述燃烧膜的所述第一凹部和所述第二凹部来形成插塞和金属互连。

129. 发明申请

US20050136361A1 Exposure system and pattern formation method using the same 有权
标题翻译：曝光系统和图案形成方法使用相同
公开(公告)号：US20050136361A1
公开(公告)日：2005-06-23
申请号：US11010422
申请日：2004-12-14
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/38 , G03B27/00 , G03F7/00 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70341
摘要： An exposure system includes a liquid supply section for supplying an immersion liquid onto a resist film formed on a substrate; and an exposure section for irradiating the resist film with exposing light through a mask with the immersion liquid provided on the resist film. The liquid supply section includes an immersion liquid tank for circulating the immersion liquid during exposure.
摘要翻译：曝光系统包括用于将浸没液体供应到形成在基板上的抗蚀剂膜上的液体供应部分; 以及曝光部，其用设置在抗蚀剂膜上的浸渍液体通过掩模曝光光照射抗蚀剂膜。液体供应部分包括用于在曝光期间循环浸液的浸液池。

130. 发明申请

US20050130079A1 Pattern formation method 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20050130079A1
公开(公告)日：2005-06-16
申请号：US11010273
申请日：2004-12-14
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/38 , G03F7/00 , G03F7/20 , H01L21/027
CPC分类号： G03F7/2041
摘要： In a pattern formation method of this invention, a resist film is formed on a substrate and the resist film is exposed to a solution including a compound having a hydrophilic group. Thereafter, with an immersion liquid provided on the resist film having been exposed to the solution, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure. Thus, a resist pattern made of the resist film is formed.
摘要翻译：在本发明的图案形成方法中，在基板上形成抗蚀剂膜，并将抗蚀剂膜暴露于包含具有亲水基团的化合物的溶液。此后，通过在抗蚀剂膜上设置的浸渍液暴露于溶液中，通过用曝光来选择性地照射抗蚀剂膜来进行图案曝光，并且在图案曝光之后使抗蚀剂膜显影。因此，形成由抗蚀剂膜制成的抗蚀剂图案。

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