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    • 121. 发明授权
    • Complementary transistor circuit and amplifier and CRT display device
using the same
    • 互补晶体管电路和放大器和CRT显示器件使用相同
    • US5724519A
    • 1998-03-03
    • US480673
    • 1990-02-15
    • Kazuo KatoHideo SatoTakashi SaseKenkichi Yamashita
    • Kazuo KatoHideo SatoTakashi SaseKenkichi Yamashita
    • H03F1/34H03F3/19H03F3/343H03G1/00H03G3/30H04N5/14G09G5/00
    • H03G3/3036H03F1/34H03F3/19H03F3/343H03G1/0023H04N5/148
    • The present invention relates to a complementary transistor circuit and an amplifier using it, and, in particular, to a video amplifier for amplifying video signals and a high-definition CRT display device. In amplifying inputted video signals by using a multiplexer, a gain controller and a current mirror amplifier, each element circuit is formed by using complementary transistor circuits. Circuit simplification is thus attained. In addition, higher precision and band broadening has been realized owing to adoption of a current operation. Further, the present invention makes it possible to eliminate direct feedback from the high voltage output completely by providing a low-voltage output circuit for feedback having a similar relationship with respect to the high-voltage video output stage of the video amplifier, thereby performing negative feedback via a sample-and-hold circuit. This also serves to broaden the bandwidth and reduce power dissipation.
    • 互补晶体管电路及其放大器技术领域本发明涉及互补晶体管电路及其使用的放大器,特别涉及用于放大视频信号的视频放大器和高分辨率CRT显示装置。 通过使用多路复用器,增益控制器和电流镜放大器来放大输入的视频信号,通过使用互补晶体管电路形成每个元件电路。 因此实现了电路简化。 此外,由于采用了当前的操作,已经实现了更高的精度和频带扩展。 此外,本发明通过提供与视频放大器的高电压视频输出级具有类似关系的反馈的低电压输出电路,可以完全消除来自高电压输出的直接反馈,由此执行负 通过采样保持电路进行反馈。 这也有助于扩大带宽并降低功耗。
    • 122. 发明授权
    • Semiconductor integrated circuit device having bipolar transistor and
field effect transistor
    • 具有双极晶体管和场效应晶体管的半导体集成电路器件
    • US5666072A
    • 1997-09-09
    • US223527
    • 1994-04-05
    • Fumio MurabayashiYoji NishioShoichi KotokuKozaburo KuritaKazuo Kato
    • Fumio MurabayashiYoji NishioShoichi KotokuKozaburo KuritaKazuo Kato
    • H01L29/73H01L21/331H01L21/82H01L27/06H01L27/118H01L29/732H03K17/04H03K17/16H03K17/567H03K19/00H03K19/003H03K19/08H03K19/0944H03K19/01
    • H01L27/0623H03K19/001H03K19/00353H03K19/09448
    • A semiconductor integrated circuit device having a plurality of logic circuits integrated on a semiconductor substrate is provided which can operate with a power source potential difference substantially less than 5 V. The logic circuit includes a bipolar transistor having a base and its collector-emitter current path coupled between a first power source terminal and an output terminal, together with at least one field effect transistor having its gate responsive to an input signal applied to an input terminal and its source-drain current path coupled between the first power source terminal and the base of the bipolar transistor. A semiconductor switch means is also provided which is responsive to the input signal applied to the input terminal for performing ON/OFF operations complementary to the ON/OFF operations of the bipolar transistor and which has a current path between its paired main terminals coupled between the output terminal and the second power source terminal. In order to improve the operating speed, a potential difference reducing element is provided having a current path between its paired main terminals coupled between the first power source terminal and the output terminal for reducing the potential difference, which is present between the first power source terminal and the output terminal based on the base-emitter forward voltage of the bipolar transistor when the bipolar transistor is ON.
    • 提供了具有集成在半导体衬底上的多个逻辑电路的半导体集成电路器件,其可以以基本上小于5V的电源电位差工作。逻辑电路包括具有基极和其集电极 - 发射极电流路径的双极晶体管 耦合在第一电源端子和输出端子之间,以及至少一个具有栅极的场效应晶体管,其响应于施加到输入端子的输入信号及其耦合在第一电源端子和基极之间的源极 - 漏极电流路径 的双极晶体管。 还提供一种半导体开关装置,其响应于施加到输入端子的输入信号,用于执行与双极晶体管的导通/截止操作互补的ON / OFF操作,并且在其双绞主端子之间具有电流通路 输出端子和第二电源端子。 为了提高工作速度,提供了一个电位差降低元件,其具有耦合在第一电源端子和输出端子之间的成对主端子之间的电流路径,用于减小电位差,该电位差存在于第一电源端子 以及当双极晶体管导通时基于双极晶体管的基极 - 发射极正向电压的输出端子。
    • 125. 发明授权
    • Magnetic recording medium
    • 磁记录介质
    • US5582910A
    • 1996-12-10
    • US384797
    • 1995-02-06
    • Hiroaki ArakiKenichi MasuyamaKazuo KatoYasuyuki TanakaToshihiko Miura
    • Hiroaki ArakiKenichi MasuyamaKazuo KatoYasuyuki TanakaToshihiko Miura
    • G11B5/716G11B5/842G11B5/66B32B5/16
    • G11B5/716G11B5/842Y10S428/90Y10T428/25Y10T428/256Y10T428/257Y10T428/259Y10T428/265Y10T428/30
    • A magnetic recording medium having improved electromagnetic characteristics and running properties is disclosed. The magnetic recording medium comprises a non-magnetic support having thereon a plurality of magnetic layers consisting of two or more layers composed of a first lower magnetic layer and a second upper magnetic layer, provided on said support by either co-coating the lower magnetic layer and the upper magnetic layer in the wet state, or coating the lower magnetic layer and then the upper magnetic layer while the lower magnetic layer is still in the wet state; wherein the cobalt-modified iron oxide is employed as the ferromagnetic powder contained in the lower magnetic layer, ferromagnetic metal is employed as the ferromagnetic powder contained in the upper magnetic layer, both the ferromagnetic powder contained in the lower magnetic layer and the ferromagnetic powder contained in the upper magnetic layer having an average major axis length of 0.25 .mu.m or less and an average acicular ratio of 10 or less, a difference in the average major axis length between the ferromagnetic powder contained in the lower magnetic layer and that contained in the upper magnetic layer of 0.08 .mu.m or less, and a difference in the average acicular ratio between the ferromagnetic powder contained in the lower layer and that contained in the upper layer of 4 or less.
    • 公开了具有改进的电磁特性和运行特性的磁记录介质。 该磁记录介质包括非磁性载体,其上具有多个由两层或多层组成的磁性层,所述两层或更多层由第一下磁层和第二上磁层组成,所述第一下层磁性层和第二上层磁性层均设置在所述载体上, 在上部磁性层处于湿润状态,或者在下部磁性层仍然处于湿润状态的同时涂覆下部磁性层,然后涂覆上部磁性层; 其中使用钴改性的氧化铁作为包含在下磁性层中的铁磁粉末,使用强磁性金属作为包含在上磁性层中的铁磁性粉末,包含在下磁性层中的铁磁性粉末和含有铁磁性粉末 在平均长轴长度为0.25μm以下且平均针状比为10以下的上磁性层中,下磁性层中含有的铁磁性粉末与包含在下磁性层中的平均长轴长度的差异 上磁性层为0.08μm以下,下层含有的铁磁性粉末与上层中所含的铁磁性粉末的平均针状比为4以下。
    • 128. 发明授权
    • Method for producing a fluorinated polymer
    • 氟化聚合物的制造方法
    • US5494984A
    • 1996-02-27
    • US325437
    • 1994-11-09
    • Atsushi FunakiTeruo TakakuraKazuo KatoKazuo HamazakiHaruhisa Miyake
    • Atsushi FunakiTeruo TakakuraKazuo KatoKazuo HamazakiHaruhisa Miyake
    • C08F2/06C08F2/18C08F2/38C08F14/18
    • C08F14/18
    • A method for producing a fluorinated polymer containing fluoroolefin units as the main constituting units, wherein CF.sub.3 (CF.sub.2).sub.n CH.sub.2 CH.sub.3 or CF.sub.3 (CF.sub.2).sub.n H, wherein n is an integer of from 1 to 8), the is used as the polymerization medium, and CF.sub.2 ClCF.sub.2 CHClF and/or CF.sub.3 CF.sub.2 CHCl.sub.2 as a chain transfer agent.Using the polymerization medium which is less likely to bring about an environmental destruction, it is possible to obtain a fluorinated polymer excellent in the heat resistance, solvent resistance, chemical resistance, etc. Further, the above chain transfer agent has good compatibility with the polymerization medium which scarcely brings about the environmental destruction, whereby it is possible to efficiently produce a fluorinated polymer excellent in the heat resistance and solvent resistance. This chain transfer agent has affinity to the resulting polymer and to the polymerization medium and has excellent handling efficiency for post treatment such as granulation or drying.
    • PCT No.PCT / JP94 / 00420 Sec。 371日期:1994年11月9日 102(e)日期1994年11月9日PCT 1994年3月16日PCT公布。 WO94 / 21696 PCT公开号 日本特开2002-1949号公报。一种含有氟代烯烃单元作为主要构成单元的含氟聚合物的制造方法,其中,CF 3(CF 2)n CH 2 CH 3或CF 3(CF 2)n H,其中n为1〜8的整数) 用作聚合介质,CF2ClCF2CHClF和/或CF3CF2CHCl2作为链转移剂。 使用不太可能引起环境破坏的聚合介质,可以获得耐热性,耐溶剂性,耐化学性等优异的氟化聚合物。此外,上述链转移剂与聚合物具有良好的相容性 介质几乎不会导致环境破坏,从而可以有效地制备耐热性和耐溶剂性优异的氟化聚合物。 该链转移剂对所得聚合物和聚合介质具有亲和性,并且对于后处理如造粒或干燥具有优异的处理效率。