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121. 发明授权

US09024349B2 Wafer level phosphor coating method and devices fabricated utilizing method 有权
公开(公告)号：US09024349B2
公开(公告)日：2015-05-05
申请号：US11656759
申请日：2007-01-22
申请人： Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
IPC分类号： H01L33/38 , H01L33/62 , H01L33/44 , H01L33/50 , H01L23/31
CPC分类号： H01L33/62 , H01L23/3114 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/501 , H01L33/507 , H01L33/508 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

122. 发明授权

US08878219B2 Flip-chip phosphor coating method and devices fabricated utilizing method 有权
标题翻译：倒装芯片荧光粉涂布方法和使用方法制造的器件
公开(公告)号：US08878219B2
公开(公告)日：2014-11-04
申请号：US12008477
申请日：2008-01-11
申请人： Ashay Chitnis , James Ibbetson , Bernd Keller
发明人： Ashay Chitnis , James Ibbetson , Bernd Keller
IPC分类号： H01L33/00 , H01L33/50 , H01L33/64 , H01L33/44
CPC分类号： H01L33/44 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/502 , H01L33/505 , H01L33/62 , H01L33/64 , H01L2224/13 , H01L2933/0041 , H01L2933/0066
摘要： Methods for fabricating light emitting diode (LED) chips one of which comprises flip-chip mounting a plurality of LEDs on a surface of a submount wafer and forming a coating over said LEDs. The coating comprising a conversion material at least partially covering the LEDs. The coating is planarized to the desired thickness with the coating being continuous and unobstructed on the top surface of the LEDs. The LEDs chips are then singulated from the submount wafer. An LED chip comprising a lateral geometry LED having first and second contacts, with the LED flip-chip mounted to a submount by a conductive bonding material. A phosphor loaded binder coats and at least partially covers the LED. The binder provides a substantially continuous and unobstructed coating over the LED. The phosphor within the coating absorbs and converts the wavelength of at least some of the LED light with the coating planarized to achieve the desired emission color point of the LED chip.
摘要翻译：制造发光二极管（LED）芯片的方法，其中之一包括倒装芯片，将多个LED安装在底座晶片的表面上并在所述LED上形成涂层。所述涂层包含至少部分地覆盖所述LED的转化材料。将涂层平坦化到所需的厚度，涂层在LED的顶表面上是连续的并且不受阻碍。然后将LED芯片从底座晶片分离。一种LED芯片，包括具有第一和第二触点的侧向几何形状LED，其中LED倒装芯片通过导电接合材料安装到基座。荧光体负载的粘合剂涂层并且至少部分地覆盖LED。粘合剂在LED上提供基本上连续且无障碍的涂层。涂层内的荧光体吸收并转换至少一些LED光的波长，使涂层平坦化，以达到LED芯片的期望的发射色点。

123. 发明授权

US08847257B2 Semiconductor light emitting devices and submounts 有权
标题翻译：半导体发光器件和底座
公开(公告)号：US08847257B2
公开(公告)日：2014-09-30
申请号：US13372765
申请日：2012-02-14
申请人： Bernd Keller , James Ibbetson , Peter Andrews , Gerald H. Negley , Norbert Hiller
发明人： Bernd Keller , James Ibbetson , Peter Andrews , Gerald H. Negley , Norbert Hiller
IPC分类号： H01L33/00 , H01L25/16 , H01L33/50
CPC分类号： H01L33/507 , H01L25/167 , H01L2224/48091 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.
摘要翻译：半导体发光器件的基座包括其中具有腔室的半导体衬底，其配置为接收发光器件。第一接合焊盘定位在空腔中以耦合到容纳在空腔中的发光器件的第一节点。第二接合焊盘定位在空腔中以耦合到定位在其中的发光器件的第二节点。还提供了包括固体波长转换元件的发光器件及其形成方法。

124. 发明授权

US08759868B2 Ultra-thin ohmic contacts for p-type nitride light emitting devices 有权
标题翻译：用于p型氮化物发光器件的超薄欧姆接触
公开(公告)号：US08759868B2
公开(公告)日：2014-06-24
申请号：US13271865
申请日：2011-10-12
申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
发明人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
IPC分类号： H01L29/22 , H01L33/42 , H01L33/40 , H01L33/32 , H01L33/38
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
摘要： A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
摘要翻译：基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有平均厚度小于约25埃。反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。

125. 发明授权

US08692277B2 Light emitting diodes including optically matched substrates 有权
标题翻译：包括光学匹配的基板的发光二极管
公开(公告)号：US08692277B2
公开(公告)日：2014-04-08
申请号：US12835366
申请日：2010-07-13
申请人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
摘要翻译：发光二极管包括包含氮化镓基n型层，有源区和氮化镓基p型层的二极管区。在氮化镓基n型层上提供衬底，并与二极管区域光学匹配。衬底具有远离氮化镓基n型层的第一面，与氮化镓基n型层相邻的第二面和其间的侧壁。侧壁的至少一部分是斜面的，以便倾斜地延伸到第一和第二面。可以在与衬底相对的氮化镓基p型层上设置反射器。此外，二极管区域可以比衬底的第二面宽，并且可以包括从第一面远离第一面和第二面的台面。

126. 发明申请

US20120241781A1 SOLID STATE LIGHTING COMPONENT 有权
标题翻译：固态照明组件
公开(公告)号：US20120241781A1
公开(公告)日：2012-09-27
申请号：US13489035
申请日：2012-06-05
申请人： Thomas Yuan , Bernd Keller , James Ibbetson , Eric Tarsa , Gerald Negley
发明人： Thomas Yuan , Bernd Keller , James Ibbetson , Eric Tarsa , Gerald Negley
IPC分类号： H01L33/50 , H01L33/58
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/58 , H01L2224/48247 , H01L2224/73265 , H01L2924/01019 , H01L2924/181 , H05B33/0821 , H05B33/0857 , H01L2224/48091 , H01L2924/00014 , H01L2924/00012
摘要： An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.
摘要翻译：一种LED组件，包括安装在基座的平坦表面上的LED芯片的阵列，所述LED芯片能够响应于电信号而发光。 LED芯片包括以不同颜色的光发射的各个组，其中每个组以串联电路互连。 LED芯片中包含一个镜头。其他实施例可以包括散热结构，其包括与底座一体并且被布置成散发来自LED芯片的热量。

127. 发明申请

US20120138996A1 Semiconductor Light Emitting Devices and Submounts 有权
标题翻译：半导体发光器件和底座
公开(公告)号：US20120138996A1
公开(公告)日：2012-06-07
申请号：US13372765
申请日：2012-02-14
申请人： Bernd Keller , James Ibbetson , Peter Andrews , Gerald H. Negley , Norbert Hiller
发明人： Bernd Keller , James Ibbetson , Peter Andrews , Gerald H. Negley , Norbert Hiller
IPC分类号： H01L33/50
CPC分类号： H01L33/507 , H01L25/167 , H01L2224/48091 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.
摘要翻译：半导体发光器件的基座包括其中具有腔室的半导体衬底，其配置为接收发光器件。第一接合焊盘定位在空腔中以耦合到容纳在空腔中的发光器件的第一节点。第二接合焊盘定位在空腔中以耦合到定位在其中的发光器件的第二节点。还提供了包括固体波长转换元件的发光器件及其形成方法。

128. 发明申请

US20120080688A1 ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES 有权
标题翻译：用于P型氮化物发光器件的超薄氧化物接触
公开(公告)号：US20120080688A1
公开(公告)日：2012-04-05
申请号：US13271865
申请日：2011-10-12
申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
发明人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
IPC分类号： H01L33/02 , H01L33/60
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
摘要： A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
摘要翻译：基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有平均厚度小于约25埃。反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。

129. 发明申请

US20120068594A1 Semiconductor Light Emitting Devices with Densely Packed Phosphor Layer at Light Emitting Surface 有权
标题翻译：半导体发光器件在发光面处密封磷光体层
公开(公告)号：US20120068594A1
公开(公告)日：2012-03-22
申请号：US12887097
申请日：2010-09-21
申请人： James Ibbetson , Peter S. Andrews
发明人： James Ibbetson , Peter S. Andrews
IPC分类号： H01J1/62 , H01J9/00
CPC分类号： H01L33/50 , F21K9/64 , H01L33/501 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2933/0041 , H05B33/10 , H01L2924/00014
摘要： An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles.
摘要翻译： LED包括具有发光表面的芯片和在发光表面上的含磷光体材料的涂层。荧光体颗粒被布置在发光表面的涂层内的密集堆积层中，并且使得发光表面与荧光体颗粒处于接触关系。

130. 发明授权

US08089090B2 Ultra-thin ohmic contacts for p-type nitride light emitting devices 有权
标题翻译：用于p型氮化物发光器件的超薄欧姆接触
公开(公告)号：US08089090B2
公开(公告)日：2012-01-03
申请号：US11191111
申请日：2005-07-27
申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
发明人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
IPC分类号： H01L29/22
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
摘要翻译：基于半导体的发光器件（LED）可以在p型氮化物层上包括p型氮化物层和金属欧姆接触。金属欧姆接触可以具有小于约的平均厚度和小于约10-3欧姆 - 厘米2的特定接触电阻。

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