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    • 127. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    • 半导体存储器件及其制造方法
    • US20100176422A1
    • 2010-07-15
    • US12649822
    • 2009-12-30
    • Koichi FUKUDADai NAKAMURAYasuhiko MATSUNAGA
    • Koichi FUKUDADai NAKAMURAYasuhiko MATSUNAGA
    • H01L27/10H01L21/82
    • H01L27/11519G11C16/0483H01L27/0207H01L27/11521H01L27/11526H01L27/11529
    • A semiconductor memory device includes a semiconductor substrate; a memory cell array on the semiconductor substrate, the memory cell array comprising a plurality of memory cells capable of electrically storing data; a sense amplifier configured to detect the data stored in at least one of the memory cells; a cell source driver electrically connected to source side terminals of the memory cells and configured to supply a source potential to at least one of the source side terminals of the memory cells; a first wiring configured to electrically connect between at least one of the source side terminals of the memory cells and the cell source driver; and a second wiring formed in a same wiring layer as the first wiring, the second wiring being insulated from the first wiring and being electrically connected to the sense amplifier, wherein the first wiring and the second wiring have a plurality of through holes provided at a predetermined interval.
    • 半导体存储器件包括半导体衬底; 所述存储单元阵列包括能够电存储数据的多个存储单元;存储单元阵列, 感测放大器,被配置为检测存储在所述存储器单元中的至少一个中的数据; 电池源驱动器,电连接到存储器单元的源极端子,并且被配置为向存储器单元的至少一个源极侧端子提供源极电位; 第一布线,被配置为电连接所述存储单元的至少一个源极端子和所述单元源驱动器; 以及形成在与所述第一布线相同的布线层中的第二布线,所述第二布线与所述第一布线绝缘并且电连接到所述读出放大器,其中所述第一布线和所述第二布线具有设置在所述第一布线的多个通孔 预定间隔。
    • 128. 发明申请
    • COMMUNICATION NETWORK FAILURE CAUSE ANALYSIS SYSTEM, FAILURE CAUSE ANALYSIS METHOD, AND FAILURE CAUSE ANALYSIS PROGRAM
    • 通信网络故障原因分析系统,故障原因分析方法和故障原因分析程序
    • US20100174945A1
    • 2010-07-08
    • US12663180
    • 2008-06-06
    • Yoshinori WatanabeYasuhiko Matsunaga
    • Yoshinori WatanabeYasuhiko Matsunaga
    • G06F11/07
    • H04M3/2254G06F11/0709G06F11/079H04L41/0631
    • A failure cause analysis system for estimating a cause of a failure in a communication network from recorded contents of internal processing of a communication apparatus includes: feature extraction means for extracting a statistical feature of the recorded contents at a time of occurrence of a failure; and failure cause estimation means for estimating a failure cause based on similarity between a statistical feature of the recorded contents that is acquired at a time of occurrence of a past failure with a known failure cause and the statistical feature of the recorded contents that is acquired at the time of occurrence of the failure. The failure cause analysis system of a communication network provided can acquire the correspondence between failure features and failure causes from past failure cases irrespective of the number of cases as to communication network failures that are detected from process logs retained in communication apparatuses, and quantitatively incorporate the range of dispersion of the features into a judgment to estimate the cause of occurrence of a failure.
    • 用于从通信设备的内部处理的记录内容中估计通信网络中的故障原因的故障原因分析系统包括:特征提取装置,用于在故障发生时提取记录内容的统计特征; 以及故障原因估计装置,用于基于在过去故障发生时获取的所记录内容的统计特征与已知故障原因与所获取的记录内容的统计特征之间的相似度来估计故障原因 发生故障的时间。 所提供的通信网络的故障原因分析系统可以获得来自过去故障情况的故障特征和故障原因之间的对应关系,而不管从通信设备中保留的进程日志中检测到的通信网络故障的数量,并定量地并入 将特征的分散范围判断为发生故障的原因。
    • 129. 发明授权
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US07709881B2
    • 2010-05-04
    • US11338714
    • 2006-01-25
    • Yasuhiko Matsunaga
    • Yasuhiko Matsunaga
    • H01L29/788
    • H01L27/115H01L27/11519H01L27/11521H01L27/11524
    • A control gate includes a first conductive film formed in contact with an inter-gate insulating film and a second conductive film electrically connected to the first conductive film. An inter-level insulating film which insulates first and second stacked gate structures from each other. The inter-level insulating film includes a first insulating film, a second insulating film, and a third insulating film formed between the first and second insulating films. The first insulating film insulates the floating gates from each other and portions of the control gates from each other. The second and third insulating films insulate the other portions of the control gates from each other. The third insulating film has a selective etching ratio with respect to the first and second insulating films.
    • 控制栅极包括与栅极间绝缘膜接触形成的第一导电膜和与第一导电膜电连接的第二导电膜。 一种将第一和第二堆叠栅极结构彼此绝缘的层间绝缘膜。 层间绝缘膜包括形成在第一和第二绝缘膜之间的第一绝缘膜,第二绝缘膜和第三绝缘膜。 第一绝缘膜将浮动栅极彼此隔离,并且控制栅极的一部分彼此绝缘。 第二和第三绝缘膜将控制栅极的其他部分彼此绝缘。 第三绝缘膜相对于第一绝缘膜和第二绝缘膜具有选择性蚀刻比。
    • 130. 发明申请
    • WIRELESS CELL MONITORING METHOD, ITS DEVICE, AND ITS PROGRAM
    • 无线小区监控方法及其设备及其程序
    • US20100093338A1
    • 2010-04-15
    • US12531103
    • 2008-02-26
    • Kosei KobayashiYasuhiko Matsunaga
    • Kosei KobayashiYasuhiko Matsunaga
    • H04W24/08
    • H04W24/08
    • In a wireless cell, the potential deterioration in quality is efficiently detected when the indication of abnormalities is weak. Provided are a step of calculating one or more radio qualities for each coverage area of a wireless cell; a step of measuring one or more network statistical qualities for each coverage area of the wireless cell; a step of making a pair of each network statistical quality and one or more radio qualities for each coverage area of each wireless cell; and a step of calculating, based on the pairs of each network statistical quality and one or more radio qualities for the coverage areas of the wireless cells, the correlation between each network statistical quality and one or more radio qualities.
    • 在无线小区中,当异常指示弱时,可以有效地检测质量的潜在恶化。 提供了对无线小区的每个覆盖区域计算一个或多个无线电质量的步骤; 测量无线小区的每个覆盖区域的一个或多个网络统计特性的步骤; 为每个无线小区的每个覆盖区域提供一对每个网络统计质量和一个或多个无线电质量的步骤; 以及基于每个网络统计质量的对和无线小区的覆盖区域的一个或多个无线电质量来计算每个网络统计质量与一个或多个无线电质量之间的相关性的步骤。