专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明授权

US09598764B2 Method of fabricating sputtering target, sputtering target using the method, and method of manufacturing organic light-emitting display apparatus using the sputtering target 有权
公开(公告)号：US09598764B2
公开(公告)日：2017-03-21
申请号：US14205624
申请日：2014-03-12
申请人： Samsung Display Co., Ltd.
发明人： Sang-Wook Shin , Sun-Young Jung , Il-Sang Lee , Jin-Woo Park , Dong-Jin Kim
IPC分类号： C04B35/457 , C23C14/34 , C23C14/08 , H01J37/34 , H01L51/52
CPC分类号： C23C14/3414 , C23C14/086 , H01J37/3414 , H01J37/3426 , H01J37/3429 , H01L51/5253
摘要： A method of fabricating a sputtering target includes preparing a first powder material including at least one of a tin oxide and a mesh-forming oxide; mixing the first powder material and a second powder material comprising carbon or a tin oxide to prepare a mixture; simultaneously performing a primary compression and primary sintering on the mixture in a reduction atmosphere; and simultaneously performing a secondary compression and secondary sintering on the mixture in the reduction atmosphere to prepare the sputtering target.

112. 发明授权

US09399815B2 Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell 有权
标题翻译：烧结氧化物材料，其制造方法，溅射靶，氧化物透明导电膜，其制造方法和太阳能电池
公开(公告)号：US09399815B2
公开(公告)日：2016-07-26
申请号：US13876278
申请日：2011-09-27
申请人： Hideto Kuramochi , Keitaro Matsumaru , Ryo Akiike , Kentaro Utsumi , Tetsuo Shibutami
发明人： Hideto Kuramochi , Keitaro Matsumaru , Ryo Akiike , Kentaro Utsumi , Tetsuo Shibutami
IPC分类号： C23C14/08 , C23C14/34 , C23C14/35 , C01G19/00 , C04B35/01 , C04B35/457 , H01B1/08 , H01L31/0224 , H01L31/0749 , H01L31/18 , C04B35/626 , C04B35/645
CPC分类号： C23C14/08 , C01G19/006 , C01P2002/34 , C01P2002/50 , C01P2004/62 , C01P2006/40 , C01P2006/60 , C04B35/01 , C04B35/457 , C04B35/62635 , C04B35/62675 , C04B35/62685 , C04B35/645 , C04B2235/3213 , C04B2235/3286 , C04B2235/3293 , C04B2235/5409 , C04B2235/5445 , C04B2235/604 , C04B2235/6562 , C04B2235/6565 , C04B2235/6585 , C04B2235/6586 , C04B2235/76 , C04B2235/768 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/963 , C23C14/086 , C23C14/3407 , C23C14/3414 , C23C14/35 , H01B1/08 , H01L31/022425 , H01L31/022466 , H01L31/022475 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： The invention provides an oxide sintered compact 2 composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell. Sn/(In+Sn+Sr)=0.01-0.11 (1) Sr/(In+Sn+Sr)=0.0005-0.004 (2) [In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.]
摘要翻译：本发明提供一种氧化物烧结体2，其由结晶相组成，该结晶相由双氧晶石型氧化物相和钙钛矿型氧化物相组成，或双氧晶石型氧化物相，具有铟，锡，锶和氧的晶相为构成元素以及原子比满足式（1）和（2）的铟，锡和锶含量以及溅射靶。还提供了使用溅射靶和太阳能电池形成的氧化物透明导电膜。 Sn /（In + Sn + Sr）= 0.01-0.11（1）Sr /（In + Sn + Sr）= 0.0005-0.004（2）[式（1）和（2），锡和锶含量（原子百分比）。]

113. 发明申请

US20160111264A1 OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：氧化物烧结体和溅射靶，及其制造方法
公开(公告)号：US20160111264A1
公开(公告)日：2016-04-21
申请号：US14894718
申请日：2014-11-28
申请人： KOBELCO RESEARCH INSTITUTE, INC. , KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
发明人： Yuki TAO , Kenta HIROSE , Norihiro JIKO , Mototaka OCHI
IPC分类号： H01J37/34 , C04B35/645 , C23C14/34 , C04B35/457
摘要： An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 μm or less. In the oxide sintered body, the relations 30 atomic %≦[In]≦50 atomic %, 20 atomic %≦[Ga]≦30 atomic % and 25 atomic %≦[Sn]≦45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO3 phase which satisfies the relation [InGaO3]≧0.05.
摘要翻译：通过烧结氧化铟，氧化镓和氧化锡得到氧化物烧结体。氧化物烧结体的相对密度为90％以上，平均粒径为10μm以下。在氧化物烧结体中，相对于原子比为30原子％＆lt; 1原子％，原子％50原子％，原子％20原子％，碳原子数20原子％和原子数25原子％满意。 [In]，[Ga]和[Sn]分别是铟镓和锡的含量（原子％）与氧化物烧结体中包含的所有金属元素的比率。氧化物烧结体具有满足[InGaO 3]≥0.05的关系的InGaO 3相。

114. 发明授权

US09115287B2 Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same 有权
标题翻译：用于制造氧化物半导体的组合物及使用其制造薄膜晶体管基板的方法
公开(公告)号：US09115287B2
公开(公告)日：2015-08-25
申请号：US13670120
申请日：2012-11-06
申请人： Samsung Display Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
发明人： Yeon-Taek Jeong , Bo-Sung Kim , Doo-Hyoung Lee , Doo-Na Kim , Eun-Hye Park , Dong-Lim Kim , Hyun-Jae Kim , You-Seung Rim , Hyun-Soo Lim
IPC分类号： H01L21/00 , C09D5/00 , H01L29/66 , C04B35/453 , H01L29/24 , H01L29/786 , H01L27/12 , H01L29/22 , C04B35/01 , C04B35/457 , C04B35/622
CPC分类号： C09D5/00 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/62222 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/443 , C04B2235/444 , C04B2235/449 , H01L27/1225 , H01L29/22 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.
摘要翻译：根据制造薄膜晶体管基板的方法，涂覆包含草酸金属盐和用于制造氧化物半导体的溶剂的组合物以形成薄膜，对薄膜进行退火，并将薄膜图案化以形成半导体模式。

115. 发明授权

US09058914B2 Oxide sintered compact and sputtering target 有权
标题翻译：氧化物烧结体和溅射靶
公开(公告)号：US09058914B2
公开(公告)日：2015-06-16
申请号：US13885868
申请日：2011-11-11
申请人： Hiroshi Goto , Yuki Iwasaki , Masaya Ehira , Yoichiro Yoneda
发明人： Hiroshi Goto , Yuki Iwasaki , Masaya Ehira , Yoichiro Yoneda
IPC分类号： H01B1/08 , C04B35/453 , C04B35/457 , C04B35/626 , C23C14/08 , C23C14/34
CPC分类号： H01B1/08 , C04B35/453 , C04B35/457 , C04B35/6261 , C04B35/62695 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/3414
摘要： This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.
摘要翻译：该氧化物烧结体通过混合和烧结氧化锌，氧化锡和氧化铟的粉末而获得。通过该氧化物烧结体的X射线衍射测定，氧化物烧结体以Zn2SnO4相为主相，并含有In / In2O3-ZnSnO3固溶体，其中In和/或In 2 O 3固溶于ZnSnO 3，但是不检测Zn x In y O z相（其中，x，y和z各自表示任意的正整数）。因此，本发明能够提供一种适用于制造显示装置用氧化物半导体膜的氧化物烧结体，具有高导电性和高相对密度。氧化物烧结体能够形成具有高载流子迁移率的氧化物半导体膜。

116. 发明授权

US09040441B2 Oxide sintered body and sputtering target 有权
标题翻译：氧化物烧结体和溅射靶
公开(公告)号：US09040441B2
公开(公告)日：2015-05-26
申请号：US14002768
申请日：2012-03-01
申请人： Hiroshi Goto , Yuki Iwasaki
发明人： Hiroshi Goto , Yuki Iwasaki
IPC分类号： C23C14/08 , C23C14/34 , C04B35/453 , C04B35/457 , H01L21/02
CPC分类号： C23C14/3414 , C04B35/453 , C04B35/457 , C04B2235/3217 , C04B2235/3244 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/08 , C23C14/086 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or less.
摘要翻译：提供了一种氧化物烧结体和溅射靶，其对于制造用于显示装置的氧化物半导体膜是理想的。所提供的氧化物烧结体和溅射靶都具有高导电性和高相对密度，能够形成具有高载流子迁移率的氧化物半导体膜，并且特别地，在长期内具有优异的直流放电稳定性，即使通过直流溅射法使用也能够稳定地进行放电。本发明的氧化物烧结体是通过将氧化锌，氧化锡和至少一种选自Al，Hf，Ni，Si，Ga的金属（M金属）的氧化物混合并烧结而得到的氧化物烧结体，In和Ta。当面内比电阻和深度方向的电阻近似为高斯分布时，分布系数＆sgr; 的电阻为0.02以下。

117. 发明授权

US09023746B2 Oxide sintered body and sputtering target 有权
标题翻译：氧化物烧结体和溅射靶
公开(公告)号：US09023746B2
公开(公告)日：2015-05-05
申请号：US13982327
申请日：2012-02-09
申请人： Yuki Iwasaki , Hiroshi Goto , Moriyoshi Kanamaru
发明人： Yuki Iwasaki , Hiroshi Goto , Moriyoshi Kanamaru
IPC分类号： C04B35/00 , C23C14/00 , C25B11/00 , C25B13/00 , C23C14/08 , C23C14/34 , C04B35/453 , C04B35/457 , C04B35/626 , C04B35/645
CPC分类号： C23C14/086 , C04B35/453 , C04B35/457 , C04B35/6261 , C04B35/645 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/604 , C04B2235/664 , C04B2235/77 , C23C14/3414
摘要： Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more.
摘要翻译：本发明提供一种氧化物烧结体，其适用于制造显示装置用氧化物半导体膜，其中氧化物烧结体具有高导电性和相对密度，能够沉积具有高载流子迁移率的氧化物半导体膜。该氧化物烧结体是通过混合烧结氧化锌，氧化锡和氧化铟的粉末得到的，当对氧化物烧结体进行EPMA面内组成映射时，Sn浓度为10〜50的面积的百分比测量面积的质量％为70面积％以上。

118. 发明申请

US20110169600A1 Ceramic material, method for the manufacture of a ceramic material and electroceramic component comprising the ceramic material 有权
标题翻译：陶瓷材料，陶瓷材料的制造方法以及包含陶瓷材料的电陶瓷组件
公开(公告)号：US20110169600A1
公开(公告)日：2011-07-14
申请号：US13063299
申请日：2009-09-11
申请人： Danilo Neuber , Adalbert Feltz
发明人： Danilo Neuber , Adalbert Feltz
IPC分类号： H01C7/13 , C04B35/457 , C04B35/50
CPC分类号： C04B35/44 , C04B35/6262 , C04B2235/3208 , C04B2235/3225 , C04B2235/3241 , C04B2235/3265 , C04B2235/3267 , C04B2235/3272 , C04B2235/5436 , C04B2235/5445 , C04B2235/762 , C04B2235/768 , H01C7/008 , H01C17/06533
摘要： Ceramic material of the general formula: [SE1-xMIIx][Cr1-y-zRyLz]O3, wherein SE stands for one or more rare earth metals, MII stands for one or more metals of the oxidation state +II, L stands for Al and/or Ga, R stands for one or more metals selected from Fe, Zn, Ge, Sn, and it holds that: 0
摘要翻译：具有以下通式的陶瓷材料：[SE1-xMIIx] [Cr1-y-zRyLz] O3，其中SE表示一种或多种稀土金属，MII表示一种或多种氧化态金属+ II，L表示Al 和/或Ga，R表示选自Fe，Zn，Ge，Sn中的一种或多种金属，并且它认为：0

119. 发明授权

US07884042B2 Antiferroelectric multilayer ceramic capacitor 有权
标题翻译：反铁电多层陶瓷电容器
公开(公告)号：US07884042B2
公开(公告)日：2011-02-08
申请号：US12837666
申请日：2010-07-16
申请人： Wesley S. Hackenberger , Seongtae Kwon
发明人： Wesley S. Hackenberger , Seongtae Kwon
IPC分类号： C04B35/457 , C04B35/491
CPC分类号： H01G4/1245 , C04B35/493 , C04B35/6261 , C04B35/6263 , C04B35/6264 , C04B35/632 , C04B35/6455 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3239 , C04B2235/3241 , C04B2235/3267 , C04B2235/3275 , C04B2235/3279 , C04B2235/3293 , C04B2235/3296 , C04B2235/365 , C04B2235/5409 , C04B2235/5445 , C04B2235/6025 , C04B2235/604 , C04B2235/661 , C04B2235/768 , C04B2235/77 , H01G4/30 , Y10T29/435
摘要： An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.
摘要翻译：公开了可以形成为层叠电容器的反铁电陶瓷材料。反铁电陶瓷材料选自Pb（Sn，Zr，Ti）O3（PSnZT）组成族。

120. 发明申请

US20100035749A1 Dielectric Thin Film Composition Showing Linear Dielectric Properties 有权
标题翻译：显示线性介电性能的介电薄膜组成
公开(公告)号：US20100035749A1
公开(公告)日：2010-02-11
申请号：US12537198
申请日：2009-08-06
申请人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
发明人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
IPC分类号： C04B35/457
CPC分类号： H01B3/12 , C04B35/4682 , C04B35/47 , C04B2235/3213 , C04B2235/3215 , C04B2235/3293
摘要： The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO2) are introduced into a (Ba,Sr)TiO3 (BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnO2 according to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiO2 while having a very low dielectric loss.
摘要翻译：本发明涉及一种电介质薄膜组合物，其表现出线性介电性质，其中在组成中以连续扩散梯度方式将锡氧化物（SnO 2）引入到（Ba，Sr）TiO 3（BSTO）电介质薄膜中。由于根据本发明通过添加SnO 2将BSTO的非线性介电性能转化为线性介电特性，所以本发明的电介质薄膜组合物的特征在于：根据应用电场; 即使在适合于防止电子隧道发生的厚度的情况下，也具有能够显示所需电容的高介电常数; 并且具有类似于常规电介质物质如SiO 2的同电性能，同时具有非常低的介电损耗。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式