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111. 发明授权

US07964440B2 Phase-separated composite films and methods of preparing the same 有权
标题翻译：相分离复合膜及其制备方法
公开(公告)号：US07964440B2
公开(公告)日：2011-06-21
申请号：US11015795
申请日：2004-12-20
申请人： Alberto Salleo , Ana Claudia Arias , William S. Wong
发明人： Alberto Salleo , Ana Claudia Arias , William S. Wong
IPC分类号： H01L51/40
CPC分类号： B82Y30/00 , H01L27/28 , H01L51/0004 , H01L51/0015
摘要： Composite films formed from blends of semiconducting and insulating materials that phase separate on patterned substrates are provided. Phase separation provides isolated and encapsulated areas of semiconductor on the substrate. Processes for preparing and using such composite films are also provided, along with devices including such composite films.
摘要翻译：提供由在图案化衬底上相分离的半导体和绝缘材料的共混物形成的复合膜。相分离在衬底上提供隔离和封装的半导体区域。还提供了制备和使用这种复合膜的方法以及包括这种复合膜的装置。

112. 发明授权

US07897216B2 Method for manufacturing organic device and electronic apparatus 有权
标题翻译：有机器件和电子设备的制造方法
公开(公告)号：US07897216B2
公开(公告)日：2011-03-01
申请号：US12069241
申请日：2008-02-09
申请人： Kiyoshi Nakamura
发明人： Kiyoshi Nakamura
IPC分类号： B05D5/12 , B05D3/02 , B05D3/06 , H01L51/40 , H01L51/00 , H01L21/00 , H01L21/336
CPC分类号： H01L51/0015 , H01L51/0005 , H01L51/0027 , H01L51/0036 , H01L51/0039 , H01L51/0071 , H01L51/0074 , H01L51/0512 , Y10T428/31504
摘要： A method for manufacturing an organic device includes disposing a solution containing a conductive organic material in a first region on a substrate, drying the solution to form a conductive organic film in the first region, and irradiating the conductive organic film formed in a second region other than the first region with light to decrease the conductivity of the conductive organic film.
摘要翻译：一种有机器件的制造方法，其特征在于，在基板的第一区域设置含有导电性有机材料的溶液，在所述第一区域中干燥所述溶液，形成导电性有机膜，将形成在所述第二区域的导电性有机膜照射比具有光的第一区域降低导电有机膜的导电性。

113. 发明授权

US07834352B2 Method of fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07834352B2
公开(公告)日：2010-11-16
申请号：US11972847
申请日：2008-01-11
申请人： Tae Woo Lee , Young Hun Byun , Yi Yeol Lyu , Sang Yoon Lee , Bon Won Koo
发明人： Tae Woo Lee , Young Hun Byun , Yi Yeol Lyu , Sang Yoon Lee , Bon Won Koo
IPC分类号： H01L31/00
CPC分类号： H01L51/0021 , B82Y10/00 , H01L51/0015 , H01L51/0046 , H01L51/0545
摘要： A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
摘要翻译：制造薄膜晶体管的方法，其中源极和漏极通过溶液处理形成，甚至包括在衬底上形成电极的所有阶段，形成绝缘体层以及形成有机半导体层通过解决过程。在该方法中，简化了制造并降低了制造成本。由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。

114. 发明申请

US20100090341A1 NANO-PATTERNED ACTIVE LAYERS FORMED BY NANO-IMPRINT LITHOGRAPHY 审中-公开
标题翻译：由纳米印刷图形成的纳米图形活性层
公开(公告)号：US20100090341A1
公开(公告)日：2010-04-15
申请号：US12578286
申请日：2009-10-13
申请人： Fen Wan , Frank Y. Xu , Sidlgata V. Sreenivasan , Shuqiang Yang
发明人： Fen Wan , Frank Y. Xu , Sidlgata V. Sreenivasan , Shuqiang Yang
IPC分类号： H01L23/50 , H01L21/3205
CPC分类号： H01L51/0003 , H01L51/0006 , H01L51/0015 , H01L2251/105 , Y02E10/549
摘要： Patterned active layers formed by nano-imprint lithography for use in devices such as photovoltaic cells and hybrid solar cells. One such photovoltaic cell includes a first electrode and a first electrically conductive layer electrically coupled to the first electrode. The first conductive layer has a multiplicity of protrusions and recesses formed by a nano-imprint lithography process. A second electrically conductive layer substantially fills the recesses and covers the protrusions of the first conductive layer, and a second electrode is electrically coupled to the second conductive layer. A circuit electrically connects the first electrode and the second electrode.
摘要翻译：通过纳米压印光刻形成的图案化有源层用于诸如光伏电池和混合太阳能电池的器件中。一个这样的光伏电池包括电耦合到第一电极的第一电极和第一导电层。第一导电层具有通过纳米压印光刻工艺形成的多个突起和凹陷。第二导电层基本上填充凹部并覆盖第一导电层的突起，并且第二电极电耦合到第二导电层。电路电连接第一电极和第二电极。

115. 发明授权

US07575952B2 Manufacturing method of semiconductor device having organic semiconductor film 有权
标题翻译：具有有机半导体膜的半导体器件的制造方法
公开(公告)号：US07575952B2
公开(公告)日：2009-08-18
申请号：US11797419
申请日：2007-05-03
申请人： Tadashi Arai , Shinichi Saito
发明人： Tadashi Arai , Shinichi Saito
IPC分类号： H01L51/40
CPC分类号： H01L51/102 , B82Y30/00 , H01L51/0015 , H01L51/0023 , H01L51/0545
摘要： A method of manufacturing a semiconductor device having an organic semiconductor film comprises a step of preparing a transparent substrate at least having an opaque gate electrode and a gate insulator thereover, a step of forming a layer containing metal-nano-particles as a conductive layer for a source electrode and a drain electrode to the thus prepared transparent substrate, a step of applying exposure to the transparent substrate on the side of a surface not mounted with the opaque gate electrode, a step of flushing away a portion other than the source electrode and the drain electrode in the layer containing the metal-nano-particles after the exposure, and a step of forming an organic semiconductor layer forming a channel portion. Lower and upper electrodes are positioned in self-alignment manner and thus no positional displacement occurs even if a printing method is used. Accordingly, semiconductor devices such as flexible substrates using an organic semiconductor can be manufactured inexpensively by using a printing method.
摘要翻译：制造具有有机半导体膜的半导体器件的方法包括制备至少具有不透明栅电极和栅极绝缘体的透明基板的步骤，形成包含金属纳米颗粒的层作为导电层的步骤源极电极和漏电极，对未形成的不透光栅电极的表面侧的透明基板进行曝光，除去源电极以外的部分的工序;以及在曝光后含有金属 - 纳米粒子的层中的漏电极，以及形成形成沟道部分的有机半导体层的工序。下电极和上电极以自对准方式定位，因此即使使用打印方法也不会发生位置偏移。因此，可以通过使用印刷方法廉价地制造诸如使用有机半导体的柔性基板的半导体器件。

116. 发明申请

US20090142556A1 PROCESS FOR FORMING AN ORGANIC ELECTRONIC DEVICE INCLUDING AN ORGANIC DEVICE LAYER 审中-公开
标题翻译：形成有机电子器件的方法，包括有机器件层
公开(公告)号：US20090142556A1
公开(公告)日：2009-06-04
申请号：US12323866
申请日：2008-11-26
申请人： Charles D. Lang , Dmitry Kolosov , Johann Thomas Trujillo
发明人： Charles D. Lang , Dmitry Kolosov , Johann Thomas Trujillo
IPC分类号： B32B3/10 , B05D3/06
CPC分类号： H01L51/0015 , H01L51/002 , H01L51/0039 , H01L51/0043 , Y10T428/24802
摘要： A process of forming an electronic device is disclosed. An organic device layer is formed. The organic device layer includes a charge-selective material and a radiation sensitizer and has a first electrical conductivity. First portions of the organic device layer are selectively exposed to radiation. The electrical conductivity of the first portions of the organic device layer is modified.
摘要翻译：公开了一种形成电子设备的过程。形成有机器件层。有机器件层包括电荷选择性材料和辐射敏化剂，并且具有第一导电性。有机器件层的第一部分选择性地暴露于辐射。改变有机器件层的第一部分的导电性。

117. 发明申请

US20090038683A1 Method and Apparatus for Patterning a Conductive Layer, and a Device Produced Thereby 审中-公开
标题翻译：用于图案化导电层的方法和装置，以及由此产生的装置
公开(公告)号：US20090038683A1
公开(公告)日：2009-02-12
申请号：US12084749
申请日：2006-11-14
申请人： Harald Walter , Tilman Beierlein
发明人： Harald Walter , Tilman Beierlein
IPC分类号： H01L51/00 , H01L51/40 , H01J9/24 , B44B5/00 , H01J1/63 , H01L51/05
CPC分类号： H01L51/0015 , H01L51/0023 , H01L51/0036 , H01L51/0086 , H01L51/0512 , H01L51/56 , H01L2251/105 , Y02E10/549
摘要： A device is fabricated by a method in which a conductive layer or layer stack is formed over a compressible layer or layer stack, and contacted with an embossing tool. Raised portions of the embossing tool compress the compressible layer or stack and countersink the conductive layer or stack into the compressible layer or stack.
摘要翻译：通过一种方法制造器件，其中在可压缩层或层叠层上形成导电层或层堆叠并与压花工具接触。压花工具的凸起部分压缩可压缩层或叠层，并将导电层或叠层沉入可压缩层或堆叠中。

118. 发明申请

US20080135839A1 Method of Fabricating Thin Film Transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20080135839A1
公开(公告)日：2008-06-12
申请号：US11972847
申请日：2008-01-11
申请人： Tae Woo Lee , Young Hun Byun , Yi Yeol Lyu , Sang Yoon Lee , Bon Won Koo
发明人： Tae Woo Lee , Young Hun Byun , Yi Yeol Lyu , Sang Yoon Lee , Bon Won Koo
IPC分类号： H01L27/13 , H01L21/326
CPC分类号： H01L51/0021 , B82Y10/00 , H01L51/0015 , H01L51/0046 , H01L51/0545
摘要： A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
摘要翻译：制造薄膜晶体管的方法，其中源极和漏极通过溶液处理形成，甚至包括在衬底上形成电极的所有阶段，形成绝缘体层以及形成有机半导体层通过解决过程。在该方法中，简化了制造并降低了制造成本。由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。

119. 发明申请

US20070262298A1 PHOTOSENSING SOLUBLE ORGANIC SEMICONDUCTOR MATERIAL 有权
标题翻译：摄影可溶有机半导体材料
公开(公告)号：US20070262298A1
公开(公告)日：2007-11-15
申请号：US11552990
申请日：2006-10-26
申请人： Tarng-Shiang Hu , Hsiang-Yuan Cheng , Jia-Chong Ho , Tzu-Wei Lee , Ming-Chou Chen , Jen-Shyang Ni
发明人： Tarng-Shiang Hu , Hsiang-Yuan Cheng , Jia-Chong Ho , Tzu-Wei Lee , Ming-Chou Chen , Jen-Shyang Ni
IPC分类号： H01L51/00 , C07D513/00
CPC分类号： C07D513/08 , H01L51/0015 , H01L51/0018 , H01L51/0053 , H01L51/0055 , H01L51/0056 , H01L51/0508
摘要： A photosensing soluble organic semiconductor material is disclosed, which includes a Diels-Alder adduct which is a polycyclic aromatic compound with a dienophile. The polycyclic aromatic compound is selected from the group consisting of oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacene. And the dienophile is represented by the formula of O═S═N—R1, wherein R1 is SO2R2, SO3R2, SO2−, or SO3−; and wherein R2 is selected from the group consisting of alkyl, alkoxy, acyl, aryl, aralkyl, chloroalkyl, fluoroalkyl, and substituted aryl with 1-12 carbon atoms.
摘要翻译：公开了一种光敏可溶性有机半导体材料，其包括具有亲二烯体的多环芳族化合物的狄尔斯 - 阿尔德加合物。多环芳香族化合物选自低聚噻吩，苝，苯并[ghi]苝，苯并芘和多并苯。而亲二烯体由OSNR 1的式表示，其中R 1是SO 2 R 2 SO 2，SO SO 2，SO 2，SO 3，SO 3，SO 3，SO 3，SO 3，SO 3， ; 并且其中R 2选自烷基，烷氧基，酰基，芳基，芳烷基，氯烷基，氟代烷基和具有1-12个碳原子的取代的芳基。

120. 发明申请

US20070259478A1 Manufacturing method of semiconductor device having organic semiconductor film 有权
公开(公告)号：US20070259478A1
公开(公告)日：2007-11-08
申请号：US11797419
申请日：2007-05-03
申请人： Tadashi Arai , Shinichi Saito
发明人： Tadashi Arai , Shinichi Saito
IPC分类号： H01L51/40
CPC分类号： H01L51/102 , B82Y30/00 , H01L51/0015 , H01L51/0023 , H01L51/0545
摘要： A method of manufacturing a semiconductor device having an organic semiconductor film comprises a step of preparing a transparent substrate at least having an opaque gate electrode and a gate insulator thereover, a step of forming a layer containing metal-nano-particles as a conductive layer for a source electrode and a drain electrode to the thus prepared transparent substrate, a step of applying exposure to the transparent substrate on the side of a surface not mounted with the opaque gate electrode, a step of flushing away a portion other than the source electrode and the drain electrode in the layer containing the metal-nano-particles after the exposure, and a step of forming an organic semiconductor layer forming a channel portion. Lower and upper electrodes are positioned in self-alignment manner and thus no positional displacement occurs even if a printing method is used. Accordingly, semiconductor devices such as flexible substrates using an organic semiconductor can be manufactured inexpensively by using a printing method.

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