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111. 发明申请

US20140239327A1 NANOSTRUCTURED LED 审中-公开
公开(公告)号：US20140239327A1
公开(公告)日：2014-08-28
申请号：US14168757
申请日：2014-01-30
申请人： GLO AB
发明人： Steven Konsek , Jonas Ohlsson , Yourii Martynov , Peter Hanberg
IPC分类号： H01L33/62 , H01L33/60
CPC分类号： H01L33/62 , B82Y20/00 , F21S41/141 , F21S41/663 , F21Y2105/10 , F21Y2115/10 , H01L27/153 , H01L27/156 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/60 , H01L2924/0002 , Y10S977/762 , Y10S977/95 , H01L2924/00
摘要： The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.
摘要翻译：根据本发明的装置包括具有从衬底的第一区域突出的第一组纳米线的纳米结构LED和在衬底的第二区域中的接触装置。第一组纳米线的每个纳米线包括p-i-n结和每个纳米线的顶部，或者至少一个纳米线选择被光反射接触层覆盖。第二区域的接触装置与纳米线的底部电接触，光反射接触层经由p-i-n结与第二区域的接触装置电接触。因此，当在第二区域的接触装置和光反射接触层之间施加电压时，在纳米线内产生光。在光反射接触层的顶部，可提供用于倒装芯片接合的第一组接触焊盘，分布和分离以均衡跨越该层的电压以减小平均串联电阻。

112. 发明授权

US08795430B2 Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates 有权
标题翻译：改善（Ga，Al，In，B）N薄膜和在非极性或半极性（Ga，Al，In，B）N底物上生长的器件的表面形态的方法
公开(公告)号：US08795430B2
公开(公告)日：2014-08-05
申请号：US12716176
申请日：2010-03-02
申请人： Robert M. Farrell , Michael Iza , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Michael Iza , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： B32B27/32 , B32B17/10 , B32B9/00 , B32B19/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02609 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/005 , H01L33/007 , H01L33/18 , H01L33/32 , H01S5/343 , Y10T428/31
摘要： A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.
摘要翻译：（Ga，Al，In，B）N薄膜中的（Ga，Al，In，B）N薄膜的生长形态的改进方法，其中，（Ga，Al，In，B）直接在非极性或半极性（Ga，Al，In，B）N底物或模板上生长，并且在生长期间使用的载体气体的一部分由惰性气体组成。可以在由本发明生长的光滑（Ga，Al，In，B）N薄膜上生长非极性或半极性氮化物LED和二极管激光器。

113. 发明申请

US20140158983A1 NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT 有权
标题翻译：氮化物半导体超紫外线发光元件
公开(公告)号：US20140158983A1
公开(公告)日：2014-06-12
申请号：US14237731
申请日：2011-08-09
申请人： Cyril Pernot , Akira Hirano
发明人： Cyril Pernot , Akira Hirano
IPC分类号： H01L33/24 , H01L33/06
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/38
摘要： A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.
摘要翻译：氮化物半导体紫外线发光元件设置有：底层结构部分，包括蓝宝石（0001）基板和形成在基板上的AlN层; 以及包括n型AlGaN基半导体层的n型包覆层，具有AlGaN基半导体层的有源层和p型AlGaN系半导体的p型包层的发光元件结构部分层，形成在下面的结构部分上。衬底的（0001）表面以等于或大于0.6°并且等于或小于3.0°的偏角倾斜，并且n型包覆层的AlN摩尔分数等于或等于超过50％。

114. 发明申请

US20140080290A1 METHOD OF SELECTIVE GROWTH WITHOUT CATALYST ON A SEMICONDUCTING STRUCTURE 有权
标题翻译：在不具有催化剂的情况下选择性生长的方法在半导体结构中
公开(公告)号：US20140080290A1
公开(公告)日：2014-03-20
申请号：US14009305
申请日：2012-04-03
申请人： Joël Eymery , Damien Salomon , Xiaojun Chen , Christophe Durand
发明人： Joël Eymery , Damien Salomon , Xiaojun Chen , Christophe Durand
IPC分类号： H01L21/02
CPC分类号： H01L21/02636 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/0242 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/0259 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02661 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/66469 , H01L29/775 , H01L29/861 , H01L33/18 , H01L33/24 , H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.
摘要翻译：在半导电结构上无催化剂选择性生长的方法。根据该方法，特别适用于电子学领域：由第一气态或分子流形成半导体结构; 在同时或随后，向其中加入至少一个第二气态或分子流，以选择性地原位生长结构上的介电层; 然后从第三气态或分子流在其上生长另一个半导电结构。

115. 发明申请

US20140077223A1 STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME 有权
公开(公告)号：US20140077223A1
公开(公告)日：2014-03-20
申请号：US14085523
申请日：2013-11-20
申请人： Panasonic Corporation
发明人： Songbaek CHOE , Toshiya YOKOGAWA , Akira INOUE , Atsushi YAMADA
IPC分类号： H01L33/32 , H01L21/20
CPC分类号： H01L33/18 , C30B25/04 , C30B25/18 , C30B29/403 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L21/20 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32 , H01L33/58 , H01L2224/14 , H01L2224/16225
摘要： A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°.

116. 发明申请

US20140073118A1 NITRIDE SEMICONDUCTOR 审中-公开
标题翻译：氮化物半导体
公开(公告)号：US20140073118A1
公开(公告)日：2014-03-13
申请号：US14087855
申请日：2013-11-22
申请人： MITSUBISHI CHEMICAL CORPORATION
发明人： Hideyoshi HORIE , Kaori KURIHARA
IPC分类号： H01L21/02
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L33/0025 , H01L33/02 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/325
摘要： To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 μm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness.
摘要翻译：提供确保所制造的发光元件的高发射效率的高质量氮化物半导体。在本发明中，当通过依次层叠一个导电型氮化物半导体部件，量子阱活性层结构部分和与一种导电类型相反的另一导电型氮化物半导体部件来获得氮化物半导体时，晶体生长在基底具有非极性主氮化物表面的情况下，通过依次层叠第一氮化物半导体层和第二氮化物半导体层而形成一个导电型氮化物半导体部，并且第二氮化物半导体层的厚度为400nm〜20μm，具有非极性最外面。通过选择上述用于晶体生长的基底，可以防止基于QCSE效应的有助于发光的电子和空穴进行空间分离，并且实现有效的辐射。此外，通过将第二氮化物半导体层的厚度设定在适当的范围，氮化物半导体表面可以避免具有非常严重的不均匀性。

117. 发明授权

US08669128B2 Method of producing III-nitride light-emitting diode 有权
标题翻译：生产III族氮化物发光二极管的方法
公开(公告)号：US08669128B2
公开(公告)日：2014-03-11
申请号：US13335199
申请日：2011-12-22
申请人： Shang-Jr Gwo , Hon-Way Lin , Yu-Jung Lu
发明人： Shang-Jr Gwo , Hon-Way Lin , Yu-Jung Lu
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/38
摘要： This invention relates to structures and fabricating methods of light-emitting diodes capable of emitting white or a color within full-visible-spectrum with better efficiency and flexibility. An embodiment provides a light-emitting diode array consisted of one or more light-emitting diodes on a substrate. Each light-emitting diode comprises a first doped nanorod, an active light-emitting region consisted of one or more nanodisks on the first doped nanorod, and a second doped nanorod on the active light-emitting region. Another embodiment provides a fabricating method of the light-emitting diode array.
摘要翻译：本发明涉及能够以更好的效率和灵活性在全可见光谱内发射白色或彩色的发光二极管的结构和制造方法。实施例提供了由基板上的一个或多个发光二极管组成的发光二极管阵列。每个发光二极管包括第一掺杂纳米棒，由第一掺杂纳米棒上的一个或多个纳米棒组成的有源发光区域和在有源发光区域上的第二掺杂纳米棒。另一实施例提供了一种发光二极管阵列的制造方法。

118. 发明授权

US08664094B2 Method of producing nitride nanowires with different core and shell V/III flow ratios 有权
标题翻译：生产具有不同核和壳V / III流量比的氮化物纳米线的方法
公开(公告)号：US08664094B2
公开(公告)日：2014-03-04
申请号：US13654892
申请日：2012-10-18
申请人： QuNano AB
发明人： Werner Seifert , Damir Asoli , Zhaoxia Bi
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L33/32 , B82Y10/00 , B82Y40/00 , C30B25/00 , C30B29/406 , C30B29/60 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/20 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/2003 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/18 , H01L33/24 , Y10S977/932
摘要： The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.
摘要翻译：本发明涉及适用于诸如二极管，LED和晶体管的众多半导体器件的氮化物半导体的生长。根据本发明的方法，利用基于CVD的选择性区域生长技术生长氮化物半导体纳米线。在纳米线生长步骤期间存在氮源和金属有机源，并且在纳米线生长步骤期间至少氮源流速是连续的。在本发明方法中使用的V / III比显着低于通常与氮化物基半导体的生长相关的V / III比。

119. 发明授权

US08648380B2 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same 有权
标题翻译：具有多个非极性发光单元的发光器件及其制造方法
公开(公告)号：US08648380B2
公开(公告)日：2014-02-11
申请号：US13865719
申请日：2013-04-18
申请人： Seoul Opto Device Co., Ltd.
发明人： Kwang Choong Kim , Won Cheol Seol , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

120. 发明授权

US08648328B2 Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces 有权
标题翻译：使用具有平面表面的三维氮化镓（GaN）柱结构的发光二极管（LED）
公开(公告)号：US08648328B2
公开(公告)日：2014-02-11
申请号：US13367120
申请日：2012-02-06
申请人： Mark Albert Crowder , Changqing Zhan , Paul J. Schuele
发明人： Mark Albert Crowder , Changqing Zhan , Paul J. Schuele
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L2933/0008 , H01L2933/0016
摘要： A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
摘要翻译：提供了一种使用具有平面表面的三维氮化镓（GaN）柱结构来制造发光二极管（LED）的方法。该方法形成多个GaN柱结构，每个GaN柱结构均具有n个掺杂的GaN（n-GaN）柱和垂直于c平面的平面侧壁，形成在m面或平面系列中。形成覆盖在n-GaN支柱侧壁上的多量子阱（MQW）层，并且在MQW层上形成一层p掺杂的GaN（p-GaN）层。多个GaN柱结构沉积在第一衬底上，其中n掺杂的GaN柱侧壁平行于第一衬底的顶表面排列。每个GaN柱结构的第一端连接到第一金属层。蚀刻每个GaN柱结构的第二端以暴露n-GaN柱的第二端并连接到第二金属层。

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